Semiconductor Research Research Articles

Mechanisms of Phase Evolution in the Cu-Sb-S System Controlled by the Incorporation of Cu in Sb2S3 Thin Films.

Ongoing research in metal chalcogenide semiconductors aims to develop alternative materials for optoelectronic devices. However, due to cost and environmental considerations, there is an increasing emphasis on utilizing green materials. This shift toward sustainable materials and processing is expected to become essential in materials research. In this work, we report the microstructural evolution of thin films of the Cu-Sb-S (CAS) system. The films were obtained by annealing amorphous Sb2S3 precursor films previously immersed in a copper solution with variable residence time. Our main findings demonstrate that varying the residence time in immersion together with the annealing and crystallization of the precursor films leads to a controlled incorporation/distribution of Cu into the films, which promotes the formation of films with phases spanning from a mixture between Sb2S3 and CuSbS2 to a pure Cu12Sb4S13 phase, which represents a significant variation in optoelectronic properties. The phase transition mechanisms were investigated using first-principles calculations and correlated with the structural, morphological, and optoelectronic characterization. Results indicate that vacancies serve as nucleation sites for copper incorporation. Subsequently, interstitial sites are occupied during the phase transformation from Sb2S3 to CuSbS2, whereas the transition from CuSbS2 to Cu12Sb4S13 proceeds via a substitutional mechanism. This study contributes to understanding the fundamental phenomena underlying our proposed methodology. These results could promote the development of CAS-based semiconductors with predetermined properties by manipulating simple process parameters, such as the residence time in a copper solution.

Design of MnOx/TiO2 Nanostructures for Photocatalytic Removal of 2,4-D Herbicide.

The research and modification of semiconductors through different synthesis routes allow obtaining materials with optimal properties to induce new energy levels and improve charge separation efficiency. In this context, the sol-gel method was used to synthesize TiO2-based materials doped with different percentages of MnOx to evaluate their photocatalytic activity in the degradation of the herbicide 2,4-dichlorophenoxyacetic acid (2,4-D) in water under UV irradiation. Characterization results revealed a reduction in crystallite size to 7.2 nm. Adding MnOx enhanced the optical absorption of TiO2, resulting in a shift toward the red end of the spectrum of the forbidden energy band. The photocatalytic activity increased significantly with the percentage of MnOx, reaching a maximum degradation of 70 % in 6 hours with the 3 MnTi material. This increase was attributed to the synthesis method, which facilitated the formation of nanostructured heterojunctions mainly composed of TiO2 and MnO2, reducing the recombination of electron-hole pairs. TEM analysis confirmed these structures. A reaction mechanism for the 3 MnTi material is proposed, considering the mobility of charge carriers and the photooxidation processes of the pollutant.

Editorial for the Special Issue on the Latest Advancements in Semiconductor Materials, Devices and Systems

The field of semiconductor research is experiencing a paradigm shift as the boundaries of Moore’s Law are being approached [...]

Growth and Performance of Perovskite Semiconductor CsPbX3 (X = Cl, Br, I, or Mixed Halide) for Detection and Imaging Applications.

The material family halide perovskites has been critical in recent room-temperature radiation detection semiconductor research. Cesium lead bromide (CsPbBr3) is a halide perovskite that exhibits characteristics of a semiconductor that would be suitable for applications in various fields. In this paper, we report on the correlations between material purification and crystal material properties. Crystal boules of CsPbX3 (where X = Cl, Br, I, or mixed) were grown with the Bridgman growth method. We describe in great detail the fabrication techniques used to prepare sample surfaces for contact deposition and sample testing. Current-voltage measurements, UV-Vis and photocurrent spectroscopy, as well as photoluminescence measurements, were carried out for material characterization. Bulk resistivity values of up to 3.0 × 109 Ω∙cm and surface resistivity values of 1.3 × 1011 Ω/□ indicate that the material can be used for low-noise semiconductor detector applications. Preliminary radiation detectors were fabricated, and using photocurrent measurements we have estimated a value of the mobility-lifetime product for holes (μτ)h of 2.8 × 10-5 cm2/V. The results from the sample testing can shed light on ways to improve the crystal properties for future work, not only for CsPbX3 but also other halide perovskites.

First-principles study of oxygen vacancy defects in β-quartz SiO2/Si interfaces

Abstract Understanding the electronic structures of gate oxides in Si-based devices is significant for improving device performance. We investigate the electronic properties of the oxygen vacancy defects in β-quartz SiO2/Si interface structure using first-principles calculations. The results indicate that the constructed (SiO2)4/(Si)4 structure is an indirect-gap semiconductor, with its band edges contributed by Si side and a large band-edge energy difference ( > 1.780 eV). Our study reveals that the presence of oxygen vacancy defects reduces the band gap, and V O 1 is transformed from indirect into direct band gap. The Si dangling bonds in V O 1 cause charge localization around the O vacancy, while the formation of Si–Si bonds in V O 2 and V O 3 lead to electron delocalization. In the calculation of defect formation energies, we find that V O 1 maintains the lowest formation energy across different states, making it more likely to form and structurally stable. Compared to O-rich environments, the formation energy in O-poor environments is overall reduced by approximately 4.5 eV, indicating that oxygen vacancy defects are more likely to form and be controlled under O-poor conditions. Our study emphasizes the importance of interface structure and defect characteristics in semiconductor research, providing insights for the development of Si-based devices.

Drivers and barriers for open innovation for sustainability in a shared semiconductor infrastructure

A shared-use semiconductor research infrastructure can be studied as a local innovation ecosystem consisting of the infrastructure operating company and the user companies. The level of open innovation for sustainability activities possible to initiate in the infrastructure is affected by the operating company and the user companies. This study focuses on developing a conceptual framework for analysing the drivers and barriers for open innovation for sustainability in the research infrastructure. The research is done as a qualitative multiple case-study in the local semiconductor ecosystem in Otaniemi, Finland. We find out that the level of understanding and ambitions related to sustainability are diverse in the different user companies. Many factors can be considered both as drivers and barriers for open innovation for sustainability depending on the context and the companies’ ambition levels. The sustainability of a shared-use infrastructure is a complex topic that requires further research to better understand how open innovation for sustainability related activities can be brought forward in such an ecosystem. The study contributes to the current understanding of open innovation for sustainability by recognising the role of shared-used research infrastructure in innovation processes within the local ecosystem.

Effect of Thickness and Sidewall Slope of Photoresist Mask on Etch Profile of Copper Interconnect

We performed high density plasma reactive ion etching of copper thin films using organic gas mixture to define fine patterns less than 10 μm for the application of display devices. However, since redeposition in dry etching of copper thin films frequently occurs due to extremely low reactivity, the etch variables which affect the formation of redeposition were investigated. In this study, the photoresist (PR) masks were employed to etch copper thin films. The effects of the thickness of PR and the sidewall slope of PR on etch profile and redeposition were examined.The thickness of PR mask were in the range of 3 μm ~ 1 μm and the sidewall slopes of the PR mask were in the range of 90° ~ 45°. The etch profile and etch mechanism of dry etching using different masks were evaluated using field emission scanning electron microscopy and X-ray photoelectron spectroscopy. Finally, an etching method to reduce and/or avoid the redeposition in dry etching of copper thin films will be proposed.Acknowledgement : This research was supported by the MOTIE(Ministry of Trade, Industry & Energy (20019504) and KSRC(Korea Semiconductor Research Consortium) support program for the development of the future semiconductor device.

(Invited) Synthesis of Ultra-Bright Colloidal Silicon Quantum Dots (PLQY~80%) and Highly Efficient LEDs (EQE>10%)

Silicon is the second most abundant element in the Earth’s crust and could be considered an environmentally benign material. Silicon has been widely used in electronic devices and solar cells, and it has dominated the semiconductor research and development. However, the photoluminescence (PL) of the bulk material shows an invisible NIR wavelength (λ ~ 1100 nm). In addition, the PL quantum yield (PLQY) of bulk crystal Si is ~0.01% owing to the indirect transition nature. In contrast, silicon quantum dots show PL in the entire visible spectral region [1]. Furthermore, colloidal silicon quantum dots demonstrate PLQYs of 60% [2], and thereby they give highly impact as environmentally benign and heavy-metal-free quantum dots (i.e., In, Cd, and Pb free) for displays, lighting, and biomedical imaging via solution processing. Indeed, silicon quantum dot LEDs have recently been produced from a natural substance, by upcycling discarded rice husks [3].Herein, red PL with a PLQY of 60–80% and LEDs with an external quantum efficiency of >10% were obtained at 1/3600th of the cost of existing methods. This was achieved by using trichlorosilane and an organic solvent to prepare a hydrogen silsesquioxane (HSQ) polymer, and by optimizing the LED optoelectric properties. Based on many silicon quantum dots synthesized in our study, each of them enabled us to quantitative the relationships HSQ polymer structure, PLQY, and LED efficiency, exhibiting the critical parameters that governed their performances. Moreover, the simple and cost-effective methods proposed here could prove invaluable for the synthesis and characterization of silicon quantum dots in the near future.

Etch Characteristics of Cobalt Thin Films in High Density Plasma of Cl2/O2/Ar Gas Mixture

Inductively coupled plasma reaction ion etching (ICP-RIE) of cobalt thin films patterned with SiO2 hard masks was performed using Cl2/O2/Ar gas mixture. The etch characteristics of cobalt films in Cl2/Ar gas were examined to determine the roles of Cl2 and O2, respectively. The etch rates and etch profiles of cobalt films were investigated by varying the O2 concentration in Cl2/O2/Ar gas mixture.In the optimized Cl2/Ar gas mixture, systematic etching of cobalt films was performed by changing the etch parameters including ICP RF power, DC-bias voltage, and process pressure. As the DC-bias voltage and process pressure was increased, the etch rate increased and the etch profile improved. Through the etching parameters variation experiment, the etching properties were investigated by adding O2 to Cl2/Ar under optimized conditions. X-ray photoelectron spectroscopy and optical emission spectroscopy were used to investigate the etch mechanism in the Cl2/O2/Ar gas mixture. In addition, scanning probe microscope was used to observe roughness on the etched cobalt surface. Finally, the etching of cobalt films patterned with nanometer-scale in the optimized Cl2/O2/Ar gas mixture was successfully achieved with good etch profile.AcknowledgmentThis research was supported by the Ministry of Trade, Industry & Energy (MOTIE) (20019504) and Korea Semiconductor Research Consortium (KSRC) support program for the development of future semiconductor devices. This work was supported by Korea Institute for Advancement of Technology (KIAT) grant funded by the Korea Government (MOTIE) (P0008458, HRD Program for Industrial Innovation).

Sustainable Energy and Semiconductors: A Bibliometric Investigation

This study investigates the link between semiconductors and sustainability, focusing on their role in advancing energy sustainability from 1999 to 2023. Key research trends, collaboration patterns, and the evolving role of semiconductors in addressing energy sustainability challenges are identified. Semiconductor research significantly contributes to the United Nations’ sustainability goals, particularly in improving energy efficiency and promoting clean energy. The analysis reveals the predominance of primary research articles, highlighting the field’s interdisciplinary nature with major contributions from engineering and physics. Network visualization illustrates extensive global collaboration among institutions, with key players like the Chinese Academy of Sciences, MIT, and Stanford University. Clustering analysis identifies critical themes in semiconductor research, including manufacturing improvements, advanced materials, and sensing technologies. This study underscores the necessity for interdisciplinary and global collaboration to address sustainability challenges, paving the way for future innovations and sustainable practices in the semiconductor industry.

Survey on Advances in Broadband Signal Generation and Processing of ASIC Semiconductors for Defense Satellites

To replace the field-programmable gate array semiconductors used in the defense satellite industry, we conducted a technical investigation of application-specific integrated circuit (ASIC) semiconductors. The analysis results show that ASIC semiconductors have the heat dissipation, reliability, and radiation resistance capabilities required in a space environment and excellent performance indicators related to the resolution of synthetic aperture radar payloads, such as operating frequency. Research and development of mission-customized ASIC semiconductors that fit the requirements for NSP(new-space paradigm) should be preceded to expanse bases of the space industry, national security capabilities for next-generation space deveolpment also to secure competitiveness of technology and domestic supply chain as space parts itselfs.

Full Picture of Lattice Deformation in a Ge1 - xSnx Micro-Disk by 5D X-ray Diffraction Microscopy.

Lattice strain in crystals can be exploited to effectively tune their physical properties. In microscopic structures, experimental access to the full strain tensor with spatial resolution at the (sub-)micrometer scale is at the same time very interesting and challenging. In this work, how scanning X-ray diffraction microscopy, an emerging model-free method based on synchrotron radiation, can shed light on the complex, anisotropic deformation landscape within three dimensional (3D) microstructures is shown. This technique allows the reconstruction of all lattice parameters within any type of crystal with submicron spatial resolution and requires no sample preparation. Consequently, the local state of deformation can be fully quantified. Exploiting this capability, all components of the strain tensor in a suspended, strained Ge1 - xSnx /Ge microdisk are mapped. Subtle elastic deformations are unambiguously correlated with structural defects, 3D microstructure geometry, and chemical variations, as verified by comparison with complementary electron microscopy and finite element simulations. The methodology described here is applicable to a wide range of fields, from bioengineering to metallurgy and semiconductor research.

Initial Study of the Onsite Measurement of Flow Sensors on Turbine Blades (SOTB).

This paper presents a new framework using MEMS flow sensors on turbine blades (SOTB) to investigate unsteady flow features of a rotating wind turbine. Self-heating flow sensors were implemented by the U18 complementary metal-oxide semiconductor (CMOS) MEMS foundry provided by Taiwan Semiconductor Research Institute (TSRI). Flow sensor chips with a size of 1.5 mm × 1.5 mm were parylene-coated, output via a wireless data acquisition system (WDAQ), and mounted at the root, middle and tip of a 1.2 m diameter semi-rigid turbine blade of a 400 W horizontal axis wind turbine (HAWT). The instantaneous angles of attack (AOAs) of the SOTB were found to be 46~62°, much higher than the general stall AOA of 15°, but were accurate considering the normal detection of the flow sensors. The computational fluid dynamics (CFD) simulation of the HAWT was also compared with the SOTB output. The onsite measurement herein revealed that the 3D secondary flow increment, mostly obvious near the middle part of the turbine blades, degraded both the sensor and the turbine performance and initially justified the onsite measurement application.

Slow sound mode prediction and band structure calculation in 1D phononic crystal nanobeams using an artificial neural network.

Phononic crystals, which are artificial crystals formed by the periodic arrangement of materials with different elastic coefficients in space, can display modulated sound waves propagating within them. Similar to the natural crystals used in semiconductor research with electronic bandgaps, phononic crystals exhibit the characteristics of phononic bandgaps. A gap design can be utilized to create various resonant cavities, confining specific resonance modes within the defects of the structure. In studies on phononic crystals, phononic band structure diagrams are often used to investigate the variations in phononic bandgaps and elastic resonance modes. As the phononic band frequencies vary nonlinearly with the structural parameters, numerous calculations are required to analyze the gap or mode frequency shifts in phononic band structure diagrams. However, traditional calculation methods are time-consuming. Therefore, this study proposes the use of neural networks to replace the time-consuming calculation processes of traditional methods. Numerous band structure diagrams are initially obtained through the finite-element method and serve as the raw dataset, and a certain proportion of the data is randomly extracted from the dataset for neural network training. By treating each mode point in the band structure diagram as an independent data point, the training dataset for neural networks can be expanded from a small number to a large number of band structure diagrams. This study also introduces another network that effectively improves mode prediction accuracy by training neural networks to focus on specific modes. The proposed method effectively reduces the cost of repetitive calculations.

Advancements in photophysics research and applications of phosphorene semiconductors

Advancements in photophysics research and applications of phosphorene semiconductors

Reference-free x-ray fluorescence analysis with a micrometer-sized incident beam

Spatially resolved x-ray fluorescence (XRF) based analysis employing incident beam sizes in the low micrometer range (μXRF) is widely used to study lateral composition changes of various types of microstructured samples. However, up to now the quantitative analysis of such experimental datasets could only be realized employing adequate calibration or reference specimen. In this work, we extent the applicability of the so-called reference-free XRF approach to enable reference-free μXRF analysis. Here, no calibration specimen are needed in order to derive a quantitative and position sensitive composition of the sample of interest. The necessary instrumental steps to realize reference-free μXRF are explained and a validation of ref.-free μXRF against ref.-free standard XRF is performed employing laterally homogeneous samples. Finally, an application example from semiconductor research is shown, where the lateral sample features require the usage of ref.-free μXRF for quantitative analysis.

Anomalous reaction of Saucedo-etching on CdZnTeSe crystal

CdTe-based materials are vital for charge-collecting devices such as solar cells and radiation detectors. This study investigates anomalous reaction between Se-added CdTe-based crystal and Saucedo-etchant unexpectedly unveiled. CZT and CZTS ingots were grown, and anomalous patterns were explored using EPMA, XPS, and SEM-EDS. The unique pattern from Saucedo-etching on CZTS was attributed to Ag2Se formation. These findings offer guidance into dislocation research in Se-added CdTe-based semiconductors.

CuInS2-Decorated Perovskite Nanoarchitecture: Halide-Driven Energy and Electron Transfer.

Perovskite nanocrystals (NCs) are an emergent and game-changing entrant in semiconductor research, yet the research on the corresponding nanoheterostructures remains in its infancy. In this work, we fabricate a type II nanoarchitecture of CsPbX3 NCs (where X = Cl, Br, or I) and CuInS2 quantum dots to investigate the energy and charge transfer (ET and CT, respectively) processes. Optical measurements of CsPbX3/CuInS2 show efficient photoluminescence (PL) quenching when X = Br or I, while the PL quenching efficiency of the X = Cl compound is 2 orders of magnitude lower. We argue the drastic PL quenching in the X = I compound is solely due to the CT process, while for the X = Br compound, a predominantly ET process is active. In contrast to the driving force (-ΔG) for the CT process, we observe the reverse order of the electron transfer process, for which we propose the electron transfer occurs in the Marcus inverted region. Our halide-dependent controlled regulation of CT and ET processes in these nanoarchitectures may find promising optoelectronic applications.

Novel ternary halide perovskite AMX3(A/M=Li, Na, K, Rb, Be, Mg, Ca, Sr, Ba, X=Br, Cl, F, I) for optoelectronic applications

In this article, we present the first principle calculations on 40 AMX3 perovskite compounds - AMX3 composition, where X = Br, Cl, F or I, and M = an alkali or alkali-earth elements. These compounds are not reported until now either theoretically or experimentally. From the literature reports of ANN, the structures were relaxed for minimum energy, and the optimized lattice constants were used to perform calculations for GGA_PBE. In this work, apart from the novel AMX3 compound's structural and electronic property investigation, we are interested in studying the impact of spin and orbital angular momentum of electrons over these AMX3 materials. So, SOC and TB_mBJ have been included in this work. The results of volume optimization, i.e., bulk modulus, pressure derivative, volume, and total energy, are tabulated. The four cases of study GGA_PBE, GGA_PBE+SOC, GGA_PBE+TB_mBJ, and GGA_PBE+SOC+TB_mBJ are compared for all the 40 compounds. The trends the band gap exhibits are studied for halides, alkalis, and alkali-earth elements. Among the compounds, the band gap of seven of the compounds studied in this work matches approximately with the Schockley-Queisser limit(Eg≈1.34 eV). The compounds presented and discussed in this article can potentially contribute to advancements in solar cell and semiconductor research.

Third generation semiconductor device research: Optimizing CMOS and HEMT designs

The third-generation semiconductor device known as High Electron Mobility Transistors (HEMT) has found extensive applications in high-frequency and high-speed electronic systems. Its widespread usage in critical technologies such as radio telescopes, satellite broadcast receivers, and cellular base stations has established HEMT as a foundational technology underpinning our information and communication society. This paper provides an in-depth exploration of these semiconductor advancements. Firstly, the paper utilizes the CMOS inverter as a representative example to elucidate the fundamental structure of Complementary Metal-Oxide-Semiconductor (CMOS) technology. Additionally, it employs Gallium Arsenide (GaAs) HEMT as an illustrative instance to expound upon the architecture of HEMT devices. Furthermore, the paper delves into the optimization of CMOS technology, focusing on topics such as Multi-Threshold CMOS and the impact of the Width/Length (W/L) ratio. These discussions shed light on ways to enhance the performance of CMOS-based components. Additionally, the paper explores strategies to optimize HEMT devices, including the introduction of carbon doping and the application of the Grey-Wolf optimization technique. These approaches are critical in achieving higher efficiency and performance in HEMT-based applications.