Reduction Of Dislocation Density Research Articles

Microstructural and material property changes in severely deformed Eurofer-97

Severe plastic deformation changes the microstructure and properties of steels, which may be favourable for their use in structural components of nuclear reactors. In this study, high-pressure torsion (HPT) was used to refine the grain structure of Eurofer-97, a ferritic/martensitic steel. Electron microscopy and X-ray diffraction were used to characterise the microstructural changes. Following HPT at room temperature to a maximum shear strain of 230, the average grain size reduced by a factor of ~30, with a marked increase in high-angle grain boundaries. Dislocation density also increased by more than one order of magnitude. The thermal stability of the deformed material was investigated via in-situ annealing during synchrotron X-ray diffraction. This revealed substantial recovery between 450 K – 800 K. Irradiation with 20 MeV Fe-ions to ~0.1 dpa caused a 20% reduction in dislocation density compared to the as-deformed material. However, HPT deformation prior to irradiation only had a minor effect in mitigating the irradiation-induced reductions in thermal diffusivity and surface acoustic wave velocity of the material. Microstructural and material property changes are dominated by deformation compared to irradiation. In light of this, the benefits of using HPT to improve the irradiation resistance of Eurofer-97 are limited. These results provide a multi-faceted view of the changes in ferritic/martensitic steels due to severe plastic deformation, and how these changes can be used to alter material properties.

Experimental Observation of a New Attenuation Mechanism in hcp‐Metals That May Operate in the Earth's Inner Core

AbstractSeismic observations show the Earth's inner core has significant and unexplained variation in seismic attenuation with position, depth and direction. Interpreting these observations is difficult without knowledge of the visco‐ or anelastic dissipation processes active in iron under inner core conditions. Here, a previously unconsidered attenuation mechanism is observed in zinc, a low pressure analog of hcp‐iron, during small strain sinusoidal deformation experiments. The experiments were performed in a deformation‐DIA combined with X‐radiography, at seismic frequencies (∼0.003–0.1 Hz), high pressure and temperatures up to ∼80% of melting temperature. Significant dissipation (0.077 ≤ Q−1(ω) ≤ 0.488) is observed along with frequency dependent softening of zinc's Young's modulus and an extremely small activation energy for creep (⩽7 kJ mol−1). In addition, during sinusoidal deformation the original microstructure is replaced by one with a reduced dislocation density and small, uniform, grain size. This combination of behavior collectively reflects a mode of deformation called “internal stress superplasticity”; this deformation mechanism is unique to anisotropic materials and activated by cyclic loading generating large internal stresses. Here we observe a new form of internal stress superplasticity, which we name as “elastic strain mismatch superplasticity.” In it the large stresses are caused by the compressional anisotropy. If this mechanism is also active in hcp‐iron and the Earth's inner‐core it will be a contributor to inner‐core observed seismic attenuation and constrain the maximum inner‐core grain‐size to ≲10 km.

Misorientation and dislocation evolution in rapid residual stress relaxation by electropulsing

This study investigates the effect of high current density electropulsing on the material in a rapid stress relaxation process. An AISI 1020 steel was shot-peened to induce surface compressive residual stresses in a controlled manner and subsequently electropulsed to investigate the changes in microstructure and defect configuration. AISI 1020 steel was chosen as it has a simple microstructure (plain ferritic) and composition with low alloying conditions. It is an appropriate material to study the effect of transmitting electric pulses on the microstructural defect evolution. A combination of electron-backscattered diffraction and transmission electron microscopy proved to be an effective tool in characterizing the post-electro pulsing effects critically. By application of electropulsing, a reduction in the surface residual stress layer was noticed. Also, reductions in misorientation and dislocation density together with the disentanglement of dislocations within the cold-worked layer were observed after electropulsing. Additionally, the annihilation of shot-peening-induced deformation bands beyond the residual layer depth was observed. These effects have been rationalised by taking into account the various possibilities of athermal effects of electropulsing.

Optimizing misfit dislocation glide kinetics for enhanced threading dislocation density reduction in Si1−xGex/Si(001) layers through dynamic growth rate control

Relaxed Si1−xGex layers on Si(001) serve as virtual substrates for strained Si or Ge layers. However, plastically relaxed layers inevitably contain misfit and threading dislocations, negatively affecting devices. Deposition of a SiGe layer on the backside of the substrate introduces a dislocation reservoir at the wafer edge that can reduce the threading dislocation density (TDD) of Si0.98Ge0.02/Si layers, as these preexisting dislocations start gliding toward the wafer center upon reaching the critical thickness. Here, we show that this low-strain system can be used effectively to study dislocation glide kinetics. In agreement with the literature, dislocation glide is a thermally activated process with an activation energy of 2.12–2.16 eV. Near the critical thickness, relaxation is sluggish and inefficient due to the linear dependence of the glide velocity on excess stress. At lower growth rates, dislocations from the edge reservoir are activated in a lower density due to the increase in the critical thickness through partial strain relaxation by already activated dislocations. Contrary to common models, here, the lowest possible growth rate is not essential for minimizing the TDD. Instead, a careful balance between low and high growth rates is beneficial. Overcoming the initial sluggish and inefficient relaxation phase is critical while also avoiding accumulation of strain energy, and, therefore, the activation of dislocation sources. Only in a later stage of buffer growth, the growth rate should be reduced to a minimum. With this method, the TDD of strain relaxed Si0.84Ge0.16 layers is reduced to 7 × 104 cm−2.

Regulating the microstructure and strength of the advancing side interface zone in AZ31 friction stir welded joint via localized selective remelting

Friction stir welding (FSW) is a solid-state welding technique widely used for various series of magnesium (Mg) alloys. However, in the process of transverse loading for FSW joints in Mg alloys, the ultimate fracture often occurs near the advancing side (AS) interface zone. To enhance the AS interface strength and overall joint strength, this research employed tungsten inert gas welding (TIG) arc to locally remelt the AS interface zone in the FSW-AZ31 joint. The microstructure characterization after remelting showed that two TIG melting zones were formed in the interface area between the AS and nugget zone (NZ). Within these zones, the grains exhibited significant coarsening and the texture intensity noticeably decreased. Conversely, the interface between the retreating side (RS) and NZ, being far from the TIG melting zone, experienced minimal changes in texture and grain size. Mechanical testing conducted at room temperature indicated that the joint ultimately fractured at the RS, resulting in an interface strength difference of ∼16 MPa between the AS and RS. The enhanced strength of the AS interface was attributed to the low Schmid factor of basal slip, reduced dislocation density, and pronounced twinning behavior.

Development of Nanopillar Arrays Nanopatterning Without Lift‐Off for Transferable GaN‐Based µLEDs

AbstractThe mass production of µLEDs requires an upscaling approach on 200 mm wafers, which implies the deployment of a technology that achieves zero defectivity without liftoff. In this report, Nanoimprint lithography (NIL) processing is successfully optimized for nanostructuring GaN‐based Silicon‐On‐Insulator (SOI) substrates. The etching of SiO2/GaN/AlN/Si/SiO2 layers using different plasmas is conducted and multi‐layer nanopillars 100–200 mm in diameter are fabricated. This approach generates zero‐defect arrays of pillars, which is particularly advantageous for the growth process. In addition, the SiO2 at the bottom of the pillar allows it to twist during the subsequent GaN regrowth, as this layer becomes soft at the growth temperature >1000 °C. This ability to deform enables a coalescence of pillars into layers with reduced dislocation density. As a result, high‐quality GaN microplatelets and µLEDs are grown via a bottom‐up approach based on pendeoepitaxy using metal–organic vapor phase epitaxy (MOVPE). The fabricated µLEDs have a very smooth surface with a roughness of 0.6 nm which facilitated the implementation of an easy and simple transfer protocol. Adhesive tape and metalmetal bonding, are used to bond the µLEDs onto a metal‐coated silicon substrate. The reported findings offer exciting new insights into the development of high‐performance displays.

Effect of Annealing Temperature on Microstructure and Properties of Solid Solution Extruded Mg–2.0Zn–1.0Y–0.5Zr Alloys

In this investigation, the effects of different annealing temperatures (180, 200, 220, 240, 260, and 280 °C) on the microstructure evolution and properties of an extruded Mg–2.0Zn–1.0Y–0.5Zr (wt%) magnesium alloys were determined. Optical microscopy (OM), scanning electron microscopy (SEM), immersion corrosion, electrochemical corrosion experiments, and tensile testing were performed. Research has found that combining hot extrusion with subsequent low-temperature annealing significantly improves the strength, plasticity, and corrosion resistance of alloys due to grain refinement and a reduced dislocation density. The alloy was completely recrystallized at an annealing temperature of 240 °C for 4 h after solid solution extrusion, and the grains were fine and uniform, demonstrating the best comprehensive properties. Its corrosion rate, ultimate tensile strength, yield strength, and elongation were 0.454 ± 0.023 mm/y, 346.7 ± 8.9 MPa, 292.4 ± 6.9 MPa, and 19.0 ± 0.4%, respectively. The corrosion mechanism of the specimens under extruded and annealed conditions was analyzed. After annealing at 240 °C for 4 h, the dislocation and bimodal grain structure of the samples were almost eliminated, resulting in uniform and fine grains, which were conducive to the formation of a more uniform and denser oxide film, thus improving the corrosion resistance of the alloy.

Improved structure and enhanced properties of detonation sprayed W coating via hot isostatic pressing

Tungsten has garnered significant attention for its superior performance as a plasma-facing material in tokamak devices. However, its hardness and high ductile-to-brittle transition temperature present challenges for its application in plasma-facing components. To address these issues, this study employs the detonation spraying (DS) technique to prepare tungsten coatings on a TZM alloy substrate and further optimizes their properties through hot isostatic pressing (HIP) treatment. Advanced characterization techniques were utilized to conduct a detailed microstructural and compositional analysis of the coatings. The results indicated that the HIP treatment significantly reduced the porosity of the coatings, improving their density and overall quality. Additionally, HIP treatment led to a decrease in internal stress, a reduction in dislocations, and the grain growth within the coatings. The study also discussed how the HIP process improved the microstructure of the DS tungsten coatings through these mechanisms, thereby enhancing the coatings' thermodynamic properties. Mechanical property tests revealed that the coatings treated with HIP exhibited higher bonding strength and lower hardness, attributed to the increase in grain size and the reduction in dislocation density within the coatings. Thermal property tests demonstrated that the HIP-treated coatings possessed higher thermal diffusivity and specific heat capacity in the temperature range of 100 to 500 °C. Furthermore, the performance of the coatings under transient high heat flux conditions was significantly improved after the HIP treatment, showing better resistance to the thermal shock and cracking. These findings are of great importance for understanding the performance enhancement of DS tungsten coatings in nuclear fusion reactor applications via HIP, especially as candidate materials for the first wall of tokamak devices.

EBSD-based image quality analysis of in-situ tempered martensitic steel generated by L-PBF

Microstructures resulting from additive manufacturing technologies, such as laser powder bed fusion (L-PBF), can exhibit both intended and unintended gradation. Intended in form of functionally graded materials (FGM) providing improved material performance. Un-intended in form of part specific local changes due to variations in thermal boundary conditions resulting from the geometry at hand (e.g. slender lattices or downskin areas). To characterize, avoid and optimize such gradations, vast spacial measurements are necessary. This work investigates if electron backscatter diffraction (EBSD) can provide such information, to characterize the microstructural gradation of low alloy steel. Central to this work is the analysis of the image quality (IQ), since the tempering of martensitic steel microstructures results in a reduction of dislocation density, changes in carbide precipitation as well as crystal structure and thus varying IQ. Based on the multi-peak IQ approach and information about the thermal history, the microstructure is considered as purely martensitic. The analysis of single laser track experiments reveals that the impact of cooling rates as well as in-situ tempering effects can be measured, which present the two major effects regarding microstructural formation in L-PBF. Experiments on in-situ and conventionally heat-treated samples show correlating trends regarding tempering states, hardness and IQ distribution. Vast measurements over a sample size of 10 × 10 mm2 demonstrate the possibility to analyze FGM. Furthermore, micro-gradations are observed within each laser track within the material. Consistent trends and correlations indicate that microstructural changes dominate changes in IQ values, while the impact of EBSD parameter and sample preparation appears to be minor. The results promote the suitability of IQ analysis for the spatial characterization of low alloy steel generated by L-PBF.

Effect of post-weld heat treatment methods on microstructure and fatigue behavior of Al-Mg-Si alloy oscillating laser welding

To address the softening issue in aluminum alloy weld joints, post-weld heat treatment(PWHT) techniques were employed to enhance the mechanical properties of Al-Mg-Si alloy weld joints joined by oscillating laser welding(OLW). A systematic investigation was conducted on the impact of two different PWHT methods, artificial aging(AA) and solution treatment followed by aging(STA), on the static mechanical properties, fatigue performance, and microstructure of the weld joints. The results indicated that both AA and STA could improve the tensile strength and fracture strain of the welded joints. Compared to AA, STA did not show a significant improvement in increasing tensile strength and elongation at break. Notably, AA significantly increases the fatigue life of the joints, while STA also contributes to enhanced fatigue life, albeit to a lesser degree. At the lowest stress level, the fatigue life of both STA and as-welded(AW) joints exceeded 106 cycles, with the STA joints exhibiting approximately 57.9% higher fatigue life than the AW joints. Microstructural analysis of the AW joints revealed the presence of dislocations and a few large-sized precipitate phases, primarily Mg2Si and AlFeSi phases. After AA, nano-scale second phases, mainly the AlFeSi phase, appeared in the weld joints, accompanied by a reduction in dislocation density. Following STA, there was a significant increase in the density and size of precipitate phases, with the coarse AlFeSi phase becoming more prominent and large-sized grain boundary precipitates appearing. The AA treatment, due to grain refinement and second phase precipitation, enhanced the hardness, tensile strength, and fatigue strength of the joints. As the STA joints exhibited more β-AlFeSi precipitates and grain boundary precipitates, the second phase strengthening effect was reduced. Although the mechanical properties of STA joints were better than those of AW joints, they were inferior to those of AA joints.

Controlled exfoliation of wafer-scale single-crystalline AlN film on MOCVD-grown layered h-BN

In this work, we present a stress-free AlN film with improved crystal quality assisted by h-BN and demonstrate the mechanical exfoliation of wafer-scale single-crystal AlN freestanding membrane and reveal the controllable exfoliation mechanism of AlN. Uniform and continuous wafer-scale h-BN is directly grown on c-plane sapphire using a flow modulation epitaxy mode by metal-organic chemical vapor deposition. The nucleation and evolution processes of quasi-van der Waals epitaxy (QvdWE) of AlN on h-BN are revealed. It is found that O2-plasma-treated h-BN can effectively promote the nucleation islands of AlN and contribute to the release of biaxial stress and the reduction of dislocation density in the epilayers. Eventually, the QvdWE growth of a stress-free AlN film (0.08 GPa) is achieved, and wafer-scale mechanical exfoliation of the AlN membrane has been realized. This work provides an effective strategy for the quality improvement of III-nitride films and paves the way for the vertical structure and flexible deep-ultraviolet optoelectronic devices.

Design engineering of non-linear graded InAlAs metamorphic buffer layers for efficient reduction of misfit dislocation density

Metamorphic InxAl1-xAs (xmax > 0.75) buffer layer (MBL) grown on GaAs with an optimized non-linear graded composition profile along the growth direction is proposed for enhanced reduction of misfit dislocation (MD) density in highly mismatched III-V/GaAs metamorphic heterostructures. The equilibrium distributions of MD density throughout such InxAl1-xAs/GaAs MBLs are calculated. The influence of the initial composition (xmin) of MBL and the elastically strained thin GaAs layer embedded into the InxAl1-xAs MBL on the MD density distribution was studied. An optimum value of the inverse step (Δ), representing the difference between the top In content of the InxAl1-xAs MBL and that of a In0.75Al0.25As virtual substrate (VS) grown atop is determined. It was theoretically shown that Δ above 0.04 results in relaxation of the elastic stresses in VS via formation of the MDs, while the lower Δ values allow growing the VS completely free of MDs. Finally, the metamorphic In0.75Al0.25As/graded-InAlAs/GaAs heterostructures differing from each other by only the composition profile of the graded-InAlAs MBL were grown by MBE on GaAs(001) and studied by atomic force microscopy. The structure with proposed optimized non-linear graded (x = 0.05–0.77) MBL demonstrated the ∼ 1.5 times less MD density as compared to that with the convex-graded (x = 0.05–0.81) MBL, which was estimated to be at the level of ∼ 2·107 cm−2.

A promising approach to enhance fatigue life of TC11 titanium alloy: Low dislocation density and surface grain refinement induced by electropulsing

The fatigue life of components can be significantly enhanced by the formation of the surface hardness layer through surface strengthening technology. To avoid the geometric distortion of thin-walled components caused by strengthening, the strengthening energy is limited and the ideal strengthening effect cannot be obtained. This work aims to propose a novel approach to address this issue effectively. The surface layer with high-density dislocations was obtained by a low-energy surface strengthening method (shot peening) at first. Then the surface strengthening mechanism changes from dislocation strengthening to grain boundary strengthening after electropulsing treatment (EPT). The evolution of residual stress and microstructure was analyzed using multi-scale characterization techniques. The results demonstrate that EPT followed by surface strengthening makes a remarkable 304 % increase in fatigue life of TC11 titanium alloy. The enhancement of fatigue life can be attributed to the grain refinement accompanied by the formation of nanotwins and sub-grains in the surface-strengthened layer, as well as the reduction in dislocation density within the substrate after EPT. This study demonstrates the significant potential of EPT in further enhancing the fatigue life of surface pre-strengthened thin-walled components.

Flexible nanoimprint lithography enables high-throughput manufacturing of bioinspired microstructures on warped substrates for efficient III-nitride optoelectronic devices

III-nitride materials are of great importance in the development of modern optoelectronics, but they have been limited over years by low light utilization rate and high dislocation densities in heteroepitaxial films grown on foreign substrate with limited refractive index contrast and large lattice mismatches. Here, we demonstrate a paradigm of high-throughput manufacturing bioinspired microstructures on warped substrates by flexible nanoimprint lithography for promoting the light extraction capability. We design a flexible nanoimprinting mold of copolymer and a two-step etching process that enable high-efficiency fabrication of nanoimprinted compound-eye-like Al2O3 microstructure (NCAM) and nanoimprinted compound-eye-like SiO2 microstructure (NCSM) template, achieving a 6.4-fold increase in throughput and 25% savings in economic costs over stepper projection lithography. Compared to NCAM template, we find that the NCSM template can not only improve the light extraction capability, but also modulate the morphology of AlN nucleation layer and reduce the formation of misoriented GaN grains on the inclined sidewall of microstructures, which suppresses the dislocations generated during coalescence, resulting in 40% reduction in dislocation density. This study provides a low-cost, high-quality, and high-throughput solution for manufacturing microstructures on warped surfaces of III-nitride optoelectronic devices.

Microstructural characteristics and recrystallization mechanism of Ti-6.5Al–2Zr–1Mo–1V alloy during two-stage hot deformation

In this study, we investigated the two-stage deformation behavior of near α Ti-6.5Al–2Zr–1Mo–1V alloy at various temperatures (915 °C, 950 °C, 1020 °C) and strain rates (0.01 s−1, 0.1 s−1). The alloy underwent differing holding periods (500s, 1000s) between deformation stages. The results demonstrated an increase in flow stress with decreasing deformation temperature and increasing strain rate. Work hardening of flow stress was observed during the two-stage thermomechanical processing within the α+β two-phase region. Microstructural evolution was characterized by the formation of α lamellar kink bands, the separation and migration of grain boundaries, and grain spheroidization. An increase in deformation temperature and a decrease in strain rate enhanced grain refinement, accelerated structural evolution, and intensified the degree of spheroidization. Dynamic recrystallization (DRX) was more prevalent at higher temperatures and lower strain rates, as the critical nucleation rate for DRX was more readily achieved. The increased interval between thermomechanical processing stages led to a transition from low-angle to high-angle grain boundaries, and a reduction in dislocation density due to static recovery occurred during the holding period. At 915 °C, hot deformation induced the formation of {10-10} twinning, altering grain orientation and reducing stress. The Schmid factor for {10-10}<1120> slip was higher at lower temperatures, which reduced the critical resolved shear stress necessary for yielding in the α phase of the Ti-6.5Al–2Zr–1Mo–1V alloy, thereby facilitating further plastic deformation.

Investigation on microstructural evolution and strengthening mechanism in Zr-2.5Nb alloy with multi-scale lamellar structure

Zr-2.5Nb alloy was subjected to a solid solution treatment at 900 °C for 30 min, followed by aging between 500 and 700 °C for 60 min. It was found that there were two distinct martensitic microstructures after the solid solution treatment: nano-twins and dislocation lamellar structures. As the aging temperature increased, the α’ martensite lath gradually decomposed, which was mainly manifested in the precipitation of the β-Zr phase, annihilation of nano-twins, and reduction of dislocation density. EBSD experiments revealed that the precipitated phase formed during aging treatment shared its (101) plane with the (011¯1) plane of nano-twins. The precipitation of the β-Zr phase along the twinning plane resulted in twin shrinkage and gradual decomposition. The yield strength of the Zr-2.5Nb alloy initially increased and then decreased with an increase in aging temperature. It is worth noting that the sample aged at 600 °C exhibited excellent strong plasticity matching, which can be attributed to the combined effect of dislocation strengthening, grain boundary/twin boundary strengthening, solid solution strengthening, and precipitation strengthening.

Coupled effect of prestrain and intermediate annealing on mechanical properties and microstructural evolution of GH5188 superalloy

The forming of sheet metal parts with complex structures often requires multiple processing. The Co-based superalloy GH5188 sheet is taken as the research object for two-stage uniaxial tensile experiments including intermediate heat treatment, where the prestrain is 10%, 20% and 30%, respectively, in the first stage. The results indicate that the macroscopic residual stress increases with increasing prestrain, which is manifested as the increase of the initial yield strength, the deterioration of ductility and work hardening ability. The increase in dislocation density in the plastic deformation process is the decisive factor. After annealing, the number of deformed grains greatly reduces, and the grain size is refined, resulting in a corresponding reduction in dislocation density. Intermediate heat treatment can eliminate dislocation stacking and stress concentration in the alloy and reduce the influence of internal stress generated during work hardening. Furthermore, the intermediate annealing can decrease the initial yield stress and increase the elongation of the predeformed sheet, while retaining desirable work hardening ability and tensile strength, ultimately enhancing the subsequent work performance.

Effect of heat treatment on the microstructure and in-situ corrosion behavior of SLM-NiTi alloys

As a medical implant material, NiTi must have good corrosion resistance in order to adapt to the complex environment in the human body. However, the impact of heat treatment on the corrosion resistance of NiTi alloys prepared by selective laser melting (SLM) remains unclear. This work investigates the effect of heat treatment on the microstructure and corrosion behavior of SLM-NiTi alloys through in-situ corrosion methods. The results indicate that the overall corrosion resistance of SLM-alloy is enhanced after heat treatment. This enhancement is attributed to the gradual transformation of HAGBs to LAGBs, reduction in dislocation density. Combined with electrochemical tests, the passivation film Rf increased, the passivation film on the alloy surface was denser, so the grain boundaries were more stable. Furthermore, the B19’ phase content increased significantly and was concentrated in the grains with GOS < 1. Pitting sources can form within these grains, leading to pitting corrosion. This work provides a theoretical basis for the preparation of high corrosion resistance SLM-NiTi alloys.

Utilizing Island Growth in Superlattice Buffers for the Realization of Thick GaN‐on‐Si(111) PIN‐Structures for Power Electronics

In this study, the effect of implementing island growth in an AlN/Al0.1Ga0.9N superlattice on the structural properties of vertical GaN‐on‐Si(111) PIN‐structures is investigated. It is demonstrated by scanning electron microscopy (SEM) and atomic force microscopy (AFM) that islands are formed on‐top of V‐pits present in the AlN nucleation layer and that the island coalescence height can be controlled by the growth temperature. Defect selective etching analyses confirm a noteworthy reduction in the threading dislocation density (TDD), which diminishes from 1.2 × 109 cm−2 ± 7.5 × 107 cm−2 to 8.5 × 108 cm−2 ± 7.3 ×107 cm−2 as the island coalescence height increases from ≈160 nm to ≈450 nm, achieved by increasing the growth temperature. Cross‐sectional transmission electron microscopy (TEM) shows that island growth is particularly favorable for the reduction of a‐type dislocations. As a consequence of the significant reduction of a‐type dislocations in the buffer, stress relaxation during the GaN film growth is reduced, which is supported by in situ wafer curvature measurements and high‐resolution X‐ray diffraction (XRD). Owing to the optimized island growth conditions, thick and crack‐free GaN layers on Si(111) substrates are obtained with an absolute wafer bow of &lt;50 μm.

Elimination of Low-Angle Grain Boundary Networks in FeCrAl Alloys with the Electron Wind Force at a Low Temperature

Low-angle grain boundaries (LAGBs) accommodate residual stress through the rearrangement and accumulation of dislocations during cold rolling. This study presents an electron wind force-based annealing approach to recover cold-rolling induced residual stress in FeCrAl alloy below 100 °C in 1 min. This is significantly lower than conventional thermal annealing, which typically requires temperatures around 750 °C for about 1.5 h. A key feature of our approach is the athermal electron wind force effect, which promotes dislocation movement and stress relief at significantly lower temperatures. The electron backscattered diffraction (EBSD) analysis reveals that the concentration of low-angle grain boundaries (LAGBs) is reduced from 82.4% in the cold-rolled state to a mere 47.5% following electropulsing. This level of defect recovery even surpasses the pristine material’s initial state, which exhibited 54.8% LAGBs. This reduction in LAGB concentration was complemented by kernel average misorientation (KAM) maps and X-ray diffraction (XRD) Full Width at Half Maximum (FWHM) measurements, which further validated the microstructural enhancements. Nanoindentation tests revealed a slight increase in hardness despite the reduction in dislocation density, suggesting a balance between grain boundary refinement and dislocation dynamics. This proposed low-temperature technique, driven by athermal electron wind forces, presents a promising avenue for residual stress mitigation while minimizing undesirable thermal effects, paving the way for advancements in various material processing applications.