Reduction Of Contact Resistance Research Articles

Enhanced near infrared and gate tunable photoresponse of MoSe2 transistor enabled by 2D hetero contact engineering

The excellent physical features of two-dimensional (2D) layered materials make them very promising for electronic and optoelectronic applications. Here, we investigated the gate-tunable and broadband (220, 365, 460, 510, 840 and 1020 nm) photoresponse of MoSe2 transistor with metallic (Cr–Au/MoSe2) and van der Waals (vdWs) hetero MoSe2/WTe2 contacts. Our study intends to investigate the underlying mechanism of photogeneration and carrier's transport process by Cr–Au/MoSe2 and hetero MoSe2/WTe2 contacts in the MoSe2 transistor. Since, our research revealed that MoSe2 devices with hetero MoSe2/WTe2 contacts exhibited remarkable performance, including high responsivity (R) of about 11.23 × 105 mA/W, exceptional external quantum efficiency (EQE) of 6.3 × 105 %, and detectivity (D*) of 4.61 × 1010 Jones compared to metallic contacts. This implies that the enhanced performance of our devices with 2D hetero-contacts could be attributed to reduced contact resistance, interlayer charge transfer and interlayer excitons in MoSe2/WTe2 heterostructure. Also, the gate-controlled response and broadband capabilities of van der Waals 2D heterostructures hold significant promises for a wide range of optoelectronic applications, including photodetectors, optical sensors, and visual imaging systems.

Enhanced contact resistance reduction in MoS2 transistors via ultrathin LiPON electrode interface doping

Two-dimensional (2D) semiconductors are considered one of the most promising channel materials in devices for the future development of integrated circuits with low power consumption and high integration. As the size of the device gradually decreases, a key challenge is to reduce the contact resistance of nanoscale devices. Doping is a crucial strategy to realize low contact resistances in 2D devices, but there is still lack of simple and compatible doping methods. Here, we report a simple and localized doping strategy that adopts an ultrathin lithium phosphorus oxynitride (LiPON) as the buffer layer of electrodes to reduce the contact resistance of MoS2 transistors. This ultrathin buffer layer induces strong n-doping in the electrode contact area, thereby achieving nearly Ohmic contact in the devices. The contact resistances of LiPON/Ti/Au electrodes for different channel carrier densities are all lower than those of Ti/Au electrodes because the Schottky barrier height (SBH) for the LiPON/Ti/Au electrodes is only 8% of the value for the Ti/Au electrodes. This work provides a simple and compatible strategy for the development of high-performance 2D devices and deepens the understanding of the important role of doping in 2D electrical contacts.

Effect of rapid thermal annealing on DC performance of Mg0.30Zn0.70O/Cd0.15Zn0.85O MOSHFET

This study focuses on a cost-effective method for fabrication of a metal oxide semiconductor-heterostructure field effect transistor (MOSHFET) based on MgZnO/CdZnO (MCO) using dual ion beam sputtering (DIBS), in contrast to the more expensive epitaxial growth system. The MOSHFETs developed in this research exhibit notable characteristics, such as a substantial two-dimensional electron gas (2DEG) transconductance (∼2.6 mS), a high ION/IOFF response ratio in the order of 108, and minimal gate leakage current. Furthermore, we explore the impact of rapid thermal annealing (RTA) on the drain current at various temperatures (600 °C and 800 °C). The results indicate a fourfold improvement in drain current compared to unannealed conditions, primarily attributed to reduced contact resistance and no degradation in term of MgZnO/CdZnO structure. Additionally, an analysis of post-RTA treatment under a nitrogen (N2) atmosphere on gate leakage current is presented. The investigation spans temperatures ranging from 400 °C to 800 °C, revealing that above 600 °C (gate leakage at 400 °C–600 °C is around ∼10−9 A), gate leakage in HFET is augmented by one order of magnitude (∼10−8 A) due to a phase change in the dielectric. These findings underscore the feasibility of DIBS-grown MCO MOSHFETs as an economical solution for the mass production of switching devices and sensors.

Ultrathin LiF Insertion and Ensued Contact Resistance Reduction in MoS2 Channel Transistors

Molybdenum disulfide (MoS2) is a representative 2D n‐type semiconductor for various electron devices, but its lateral conduction performances are still restricted, which are mainly attributed to the contact resistance (Rc) in field‐effect transistors (FETs). Low‐enough Rc value must be realized toward practical device fabrications. Herein, 2D MoS2 FETs using chemical vapor deposited (CVD) MoS2 channels with and without the ultrathin LiF interlayer are fabricated, to demonstrate the practical benefits of LiF. In addition, LiF is also applied to Al metal which is known to be more Earth abundant than Au, expecting the similar positive effects of the inserted LiF. When 35 CVD‐grown MoS2 channel FETs with Au are characterized on an identical gate dielectric substrate, the higher value of mobility ranging 55–60 cm2 V s−1 is achieved with the inserted LiF than that without LiF (≈20 cm2 V s−1). In the case of another MoS2 FET with exfoliated flake channel and Al contact, its field‐effect mobility with LiF insertion appears to be ≈35 cm2 V s−1, approaching to an almost Rc‐free mobility (42 cm2 V s−1).

Regulation to Ag–Al spikes through silver aluminum paste with Al–Si alloy

It is known that metallization of Ag–Al pastes to boron doped emitter of N-type solar cells will reduce contact resistance, because Al will promote forming Ag–Al spikes, providing conductive channels. However, deeper Ag–Al spikes will exacerbate metal recombination and deteriorate cell performance, thus requiring regulation. It has been reported that adding Si to Ag–Al pastes could effectively limit the formation of Ag–Al spikes, but it will increase grid line resistance and reduce conductivity. Based on this, we prepared new Ag–Al pastes using Al–Si alloys, which effectively regulated Ag–Al spikes and ensured electrical properties. In addition, we comprehensively compared the contact properties of conventional Ag–Al pastes, Ag–Al pastes with added Si, and Al–Si alloy pastes. The results indicated that conventional Ag–Al pastes have lower contact potential barriers and better contact performance, but Ag–Al spikes are difficult to control. Adding Si to Ag–Al pastes effectively limited the formation of spikes, but it will significantly increase potential barriers and deteriorate electrical performance. By contrast, using Al–Si alloys can not only achieve comprehensive regulation of the size and composition of Ag–Al spikes, but also ensure good electrical performance. This study developed Al–Si alloy pastes with great potential for application, which were of great significance for regulation of Ag–Al spikes and the development of advanced Ag–Al pastes.

Development of high conducting phosphorous doped nanocrystalline thin silicon films for silicon heterojunction solar cells application

We have investigated the plasma-enhanced chemical vapor deposition growth of the phosphorus-doped hydrogenated nanocrystalline silicon (n-nc-Si:H) film as an electron-selective layer in silicon heterojunction (SHJ) solar cells. The effect of power densities on the precursor gas dissociation are investigated using optical emission spectra and the crystalline fraction in n-nc-Si:H films are correlated with the dark conductivity. With the P d of 122 mW cm−2 and ∼2% phosphorus doping, we observed Raman crystallinity of 53%, high dark conductivity of 43 S cm−1, and activation energy of ∼23 meV from the ∼30 nm n-nc-Si:H film. The n-nc-Si:H layer improves the textured c-Si surface passivation by two-fold to ∼2 ms compared to the phosphorus-doped hydrogenated amorphous silicon (n-a-Si:H) layers. An enhancement in the open-circuit voltage and external quantum efficiency (from >650 nm) due to the better passivation at the rear side of the cell after integrating the n-nc-Si:H layer compared to its n-a-Si:H counterpart. An improvement in the charge carrier transport is also observed with an increase in fill factor from ∼71% to ∼75%, mainly due to a reduction in electron-selective contact resistivity from ∼271 to ∼61 mΩ-cm2. Finally, with the relatively better c-Si surface passivation and carrier selectivity, a power conversion efficiency of ∼19.90% and pseudo-efficiency of ∼21.90% have been realized from the SHJ cells.

Insight of Effect of Silver Powders on Silver‐silicon Contacts of Crystalline Silicon Solar Cells through Analysis of Glass Structural Decay

Optimally designed silver‐silicon (Ag‐Si) contacts based on silver (Ag) paste screen printing and the rapid sintering process, have been widely utilized in mainstream crystalline silicon solar cells, enabling to reduce contact resistance and high photo‐conversion efficiency. Ag powder is the largest conductive component in Ag paste, but its impact on the formation of Ag‐Si contacts lacks in‐depth research and comprehensive understanding. In this work, we demonstrated that the oxygen adsorption capacity of silver powders affected the formation of Ag‐Si contacts by enhancing the reactivity of Ag powders with glass frits, and had a significant effect on the performance of devices. The generation of Ag2O introduced by surface absorbed oxygen promoted the transformation of [TeO4] triangular bipyramidal into [TeO3] triangular pyramid, thus destroying the network structure of the glass frits. This structural decay accelerated the spreading of glass frits in the bulk, causing the glass frits to come into contact with SiNx layers earlier and facilitating the formation of the Ag‐Si contacts. This work not only provides a complete picture of the interaction between Ag powder and glass frits, but also a new direction to optimize the Ag‐Si contacts.This article is protected by copyright. All rights reserved.

Strong hybridization of Nb2C with MoS2: a way to reduce contact resistance

The hybridization of MXene materials and transition metal dichalcogenides has a significant impact on heterojunction properties. The transport properties and electronic structure of heterojunctions of semiconducting MoS2 and metallic MXene Nb2C were studied by integrating density functional theory with non-equilibrium Green’s function theory. The hybridization between Nb2C and MoS2 makes the tunneling barrier between the two layers disappear, which can enhance the electron injection efficiency from the Nb2C to the MoS2. Moreover, the Nb2C/MoS2 heterojunction exhibits a conventional n-type Schottky contact with a barrier height of 0.14 eV, which is significantly lower than the barrier height of 0.29 eV at the Ti/MoS2 junction. These factors result in a field-effect transistor with a low contact resistance of 138 Ω·μm and a higher current of 1.09 mA μm−1 at a bias voltage of 0.3 V applied between the left and right electrodes. Following the application of gate voltage, the I on/I off ratio reaches 1266.

Soldering Pressure Effect on Lifetime of Thermoelectric Modules under Thermal Cycling.

For practical industrial applications, enhancing the longevity and the reliability of thermoelectric modules (TEMs) is equally as crucial as improving their conversion efficiency. This study proposes a strategy for extending the lifespan and introduces the quality evaluation criteria for the most extensively used commercial bismuth telluride TEM. By varying the soldering pressure during module assembly, its impact on the quality of the module's internal interfacial connections was investigated, via analyzing its contact resistivity, shear modulus, and antifatigue ability through thermal cycling tests. The findings reveal that increasing the soldering pressure leads to a slight reduction in interfacial contact resistivity and has no significant effect on the shear modulus but notably enhances the module's antifatigue ability during thermal cycling tests. According to the SEM results, it can be evidently deduced that the aforementioned phenomena are directly correlated with the size and quantity of voids distributed in the solder layer, which is regarded as the origin of antifatigue ability. Thus, it can be inferred that augmenting the soldering pressure represents an effective approach to prolonging the lifespan of TEMs assembled by using the soldering method. Furthermore, the existence of voids within the solder layer can serve as a criterion for an initial assessment of module longevity. This study provides a reference for both the industrial assembly and lifespan evaluation of commercial bismuth telluride TEMs.

Enhanced carrier mobility and interface charge transfer in Bi–MoS2 heterojunctions induced by point defects

Semimetal Bi in contact with monolayer MoS2 (mMoS2) as a substrate reduced contact resistance. This phenomenon has attracted widespread attention. Presently, systematic research on defects in semimetal-TMDs heterojunctions remains limited. In this paper, nine types of vacancy defects (three S-vacancies at the heterojunction interface (VSI, II, III), three S-vacancies on the top layer (VSI, II, IIIt), one Mo vacancy (VMo), Mo–S double vacancies (VMo–S) and Mo–S triple vacancies (VMo–2S)) and defect-free structure (Perfect) are designed in mMoS2. Their impact on defect formation energy, Interface charge transfer, and carrier mobility in three-layer (3L)Bi(0001)-mMoS2 heterojunctions are studied by the First-Principles. The energy analysis indicates that in the 3LBi-mMoS2 contact, VS are more prone to formation than VMo, VSt, VMo–S and VMo–2S. At the same time VSⅡ has the lowest formation energy under Mo-rich environments. The analysis of electron and charge redistribution in the 3LBi-mMoS2 contact with defects indicates that defect generation introduces peaks at the Fermi level, enhancing the hybridization of Mo_4d and S_3p. The hybridization rate of electron orbitals in VMo surpasses that in VS and VSt, signifying that heterojunction structures with defects exhibit increased electron injection efficiency at the interface compared to Perfect. The charge carrier mobility of S and Mo defects in 3LBi-mMoS2 reveals a significant reduction in the effective mass of charge carriers due to vacancy defects. Due to the location of defects, heterojunctions exhibit anisotropy. Obtain Perfect > VMo > VSII (370.7 > 277>125.1 cm2V−1S−1) for the x-direction carrier mobility (μx), while VMo > Perfect > VSII (440.8 > 279.7>131.6 cm2V−1S−1) for the y-direction carrier mobility (μy). These findings offer practical insights for utilizing defects to modulate the electronic properties of Semimetal-MoS2 heterojunction interfaces.

Specific contact resistivity reduction in amorphous IGZO thin-film transistors through a TiN/IGTO heterogeneous interlayer

Oxide semiconductors have gained significant attention in electronic device industry due to their high potential for emerging thin-film transistor (TFT) applications. However, electrical contact properties such as specific contact resistivity (ρC) and width-normalized contact resistance (RCW) are significantly inferior in oxide TFTs compared to conventional silicon metal oxide semiconductor field-effect transistors. In this study, a multi-stack interlayer (IL) consisting of titanium nitride (TiN) and indium-gallium-tin-oxide (IGTO) is inserted between source/drain electrodes and amorphous indium-gallium-zinc-oxide (IGZO). The TiN is introduced to increase conductivity of the underlying layer, while IGTO acts as an n+-layer. Our findings reveal IGTO thickness (tIGTO)-dependent electrical contact properties of IGZO TFT, where ρC and RCW decrease as tIGTO increases to 8 nm. However, at tIGTO > 8 nm, they increase mainly due to IGTO crystallization-induced contact interface aggravation. Consequently, the IGZO TFTs with a TiN/IGTO (3/8 nm) IL reveal the lowest ρC and RCW of 9.0 × 10−6 Ω·cm2 and 0.7 Ω·cm, significantly lower than 8.0 × 10−4 Ω·cm2 and 6.9 Ω·cm in the TFTs without the IL, respectively. This improved electrical contact properties increases field-effect mobility from 39.9 to 45.0 cm2/Vs. This study demonstrates the effectiveness of this multi-stack IL approach in oxide TFTs.

Selective chemical doping of carbon nanotube conductors to reduce contact resistance with copper in ultrasonic welds

Electrochemical devices such as batteries, fuel cells, and capacitors employing a carbon nanotube (CNT) electrode can be improved by lowering the contact resistance between CNTs and metallic contacts. The current work investigates two simultaneous strategies to enhance the contact by using chemical doping of CNTs with potassium tetrabromoaurate (KAuBr4) and ultrasonic welding to a metal foil. The specific contact resistivity was measured using the transfer length method (TLM) to evaluate CNT test structures having ultrasonically welded Cu contacts with and without KAuBr4 doping. Purified CNT-Cu samples had a specific contact resistivity of 5.4 mΩ cm2, whereas the KAuBr4 doped CNT-Cu samples were 2.2 mΩ cm2. Confirmation of selective doping to the weld region was made using measured differences in the emissivity of purified and KAuBr4 doped CNTs, which were 0.84 and 0.56, respectively. The lower contact resistance from KAuBr4 doped CNT-Cu ultrasonic welds also reduced the extent of Joule heating beyond the contact region when applying increasing current to failure in a 2-terminal test structure. The benefit of selectively doped CNT-Cu welds was demonstrated across rectangular ribbon and electrode form factors up to an area of 6 cm × 8 cm (typical of electrochemical pouch-cell current collectors). Each form factor showed a 1.5× reduction in peak temperature when selective doping of the CNTs was performed prior to ultrasonic welding of the Cu contact. Thus, the combination of selective doping and ultrasonic welding demonstrates a viable method to fabricate low electrical resistance between CNT electrodes and metallic contacts for electrochemical devices.

Compressible thermal interface materials with high through-plane thermal conductivity from vertically oriented carbon fibers

The mechanical properties especially the compression performance are very important for thermal interface materials (TIMs) to mitigate warpage failure caused by stress concentration and reduce contact resistance in practical applications. However, high thermal conductivity and excellent mechanical properties are generally incompatible in traditional TIMs. Herein, we fabricate a high-performance carbon fiber-based TIM by using an extrusion method based on the flow shearing effect. The vertically oriented composite shows a through-plane thermal conductivity up to 18.5 W·m−1·K−1 at 20 wt% carbon fiber content, which is 92.7 times that of pure matrix and 6.3 times that of the random structure. Moreover, the as-prepared material exhibits low hardness of 56 (Shore 00) and outstanding elastic compression performance of 51.4% compression under a pressure of 45 psi. These excellent properties are primarily attributed to the high orientation of the carbon fibers (CFs), thereby establishing a direct and effective thermal conductivity path in the vertical direction. In addition, the synergistic effect of carbon fibers and alumina particles is also beneficial for building thermal conduction pathways. Our work provides an insight to further research in fabricating high-performance flexible TIMs as a promising candidate for applying in advanced thermal management fields.

Low Contact Resistance Organic Single-Crystal Transistors with Band-Like Transport Based on 2,6-Bis-Phenylethynyl-Anthracene.

Contact resistance has become one of the main bottlenecks that hinder further improvement of mobility and integration density of organic field-effect transistors (OFETs). Much progress has been made in reducing contact resistance by modifying the electrode/semiconductor interface and decreasing the crystal thickness, however, the development of new organic semiconductor materials with low contact resistance still faces many challenges. Here, 2,6-bis-phenylethynyl-anthracene (BPEA) is found, which is a material that combines high mobility with low contact resistance. Single-crystal BEPA OFETs with a thickness of ≈20nm demonstrated high mobility of 4.52cm2V-1s-1, contact resistance as low as 335Ωcm, and band-like charge transport behavior. The calculated compatibility of the EHOMO of BPEA with the work function of the Au electrode, and the decreased |EHOMO-ΦAu| with the increase of external electric field intensity from source to gate both contributed to the efficient charge injection and small contact resistance. More intriguingly, p-type BPEA as a buffer layer can effectively reduce the contact resistance, improve the mobility, and meanwhile inhibit the double-slope electrical behavior of p-channel 2,6-diphenyl anthracene (DPA) single-crystal OFETs.

Reducing contact resistance of MoS2-based field effect transistors through uniform interlayer insertion via atomic layer deposition.

Molybdenum disulfide (MoS2), a semiconducting two-dimensional layered transition metal dichalcogenide (2D TMDC), with attractive properties enables the opening of a new electronics era beyond Si. However, the notoriously high contact resistance (RC) regardless of the electrode metal has been a major challenge in the practical applications of MoS2-based electronics. Moreover, it is difficult to lower RC because the conventional doping technique is unsuitable for MoS2 due to its ultrathin nature. Therefore, the metal-insulator-semiconductor (MIS) architecture has been proposed as a method to fabricate a reliable and stable contact with low RC. Herein, we introduce a strategy to fabricate MIS contact based on atomic layer deposition (ALD) to dramatically reduce the RC of single-layer MoS2 field effect transistors (FETs). We utilize ALD Al2O3 as an interlayer for the MIS contact of bottom-gated MoS2 FETs. Based on the Langmuir isotherm, the uniformity of ALD Al2O3 films on MoS2 can be increased by modulating the precursor injection pressures even at low temperatures of 150 °C. We discovered, for the first time, that film uniformity critically affects RC without altering the film thickness. Additionally, we can add functionality to the uniform interlayer by adopting isopropyl alcohol (IPA) as an oxidant. Tunneling resistance across the MIS contact is lowered by n-type doping of MoS2 induced by IPA as the oxidant in the ALD process. Through a highly uniform interlayer combined with strong doping, the contact resistance is improved by more than two orders of magnitude compared to that of other MoS2 FETs fabricated in this study.

Deformation induced absorption band-tunable smart CNTs/Ti3C2Tx-WPU electromagnetic wave absorbing aerogel

Intelligent devices and multi-functional integrated electromagnetic functional materials have been widely concerned, and it's really matter to develop intelligently adjustable electromagnetic wave (EMW) absorbing materials. However, MXene Ti3C2Tx-based aerogel with adjustable strain and EMW absorption properties have rarely been reported. We use Water-borne polyurethane (WPU) as a binder to connect CNTs/Ti3C2Tx absorbent into CNTs/Ti3C2Tx-WPU aerogel with high resilience. The bidirectional freeze-drying method results in the periodic structure of the aerogel. Under external stress, when the critical buckling load is reached, the aerogel will buckle, resulting in the reduction of layer spacing and contact resistance. Due to the threshold effect caused by compression, the conductivity increases, which significantly affects the dielectric loss and EMW absorption properties. Meanwhile, when the applied stress is removed, the shape of aerogel can recover, indicating the aerogel has excellent elasticity. We selected the aerogel with a mass fraction of 0.2 wt% for compression to research its mechanical and dielectric properties. With 42% compression stain, the minimum reflection loss of the sample reached −68.2 dB. At 50% maximum compression stain, the CNTs/Ti3C2Tx-WPU aerogel can be cycled at least 100 times and keep structure stable. With the increase of stress, the EMW absorption band shifts to the high-frequency. When the stress is removed, absorption band returns to its original position. It provides an effective avenue to explore electromagnetic absorbers with intelligent response.

Direct Observation of Semimetal Contact Induced Charge Doping and Strain Effect in CVD‐Grown Monolayer MoS2 Transistors

AbstractTwo‐dimensional Materials (2DMs) offer significant promise for advancing device miniaturization and extending Moore's law. Despite the challenges posed by high contact resistance in transistors, recent discoveries highlight semimetals as an effective approach for achieving ohmic contact with near‐quantum‐limit contact resistance. The energy band hybridization between semimetal and MoS2 is found to create degenerate states and heavily doped contact, which is proposed as the underlying mechanism responsible for reducing contact resistance. However, a quantitative and comprehensive characterization of the semimetal‐MoS2 interface is lacking, leaving the physical interactions elusive. This study reveals that semimetals induce n‐type doping and tensile strain in monolayer MoS2 grown using CVD, which serve as the contact resistance and mobility boosters. Among the semimetals investigated, including Bismuth (Bi), Antimony (Sb), and their alloy, Bi results in the highest electron doping of 2 × 1013 cm−2 and a 0.5% tensile strain, leading to reduced contact resistance and enhanced mobility. First‐principles calculations and spectroscopy measurements unveil the impact of electron doping and strain in MoS2, and the thermal effects are subsequently explored. This research underscores the potential of semimetals in boosting device performance and lays the foundation for reducing contact resistance in transistors made from 2D materials.

Extraction of contact resistivity for a partial contact solar cell

Partial contacts are used in solar cells and other electronic devices. The contact resistivity and contact resistance of these partial contacts play a significant role in the performance optimization of these devices. In this work, we propose a strategy for accurate extraction of the partial contact resistivity (ρPC) of a solar cell with Ohmic (or linear) and Schottky (or non-linear) contacts. We demonstrate how the Cox–Strack method can accurately estimate the ρPC of a solar cell using Sentaurus TCAD-based simulations. Our simulation predicts that for linear contact solar cells, ρPC is approximately constant when the contact fraction is varied, whereas for non-linear contact, ρPC decreases with contact fraction as opposed to the previously reported works. The experimentally reported data is also shown to support the claim for the linear contacts further. Despite the larger full-contact resistivity of non-linear contacts, the contact resistivity and fill factor (FF) of both linear and non-linear partial contact solar cell is almost similar to ∼3.5−5mΩcm−2 and ∼ 75% respectively at a 0.3% contact fraction. This is attributed to the reduction in contact resistivity for non-linear contacts with contact fraction. We finally show the generality of this study for any contact material system. This work can be applied to any device with partial contacts.

A unique clamping mechanism for a cylindrical PEMFC for an enhanced performance

Polymer electrolyte membrane fuel cells with planar structures have been proven beneficial; however, cylindrical cells have higher gravimetric and volumetric power density with possible applications in aviation and portable power sources. In this study, a unique clamping mechanism for a cylindrically structured polymer electrolyte membrane fuel cell is developed to improve the performance of the cell through reduced contact resistance over the active area of the cell. The design is structurally modelled and simulated for the contact pressure distribution, followed by experimental validation of contact pressure distribution at the interface of the gas diffusion layer and current collector. The study results in a lower ohmic resistance due to the better electrical contact at the interface of gas diffusion layer and current collector using the new clamping system. The average contact pressure with the new system is observed to be 0.40 MPa, i.e. 33% higher than that of the strap clamping system. In addition, the contact resistance of the cell with new clamps is found to decrease by 18 %, thus resulting in 36 % better performance (55 mW/cm2 at 0.6 V) than that of the conventional clamping system (40 mW/cm2 at 0.6 V). Such enhancement is also attributed to more oxidant supply (12%) at the cathode current collectors due to better cell clamping design.

Impact of Pulse Duration on the Properties of Laser Hyperdoped Black Silicon

The impact of three different pulse durations (100 fs, 1, and 10 ps) on the formation of laser hyperdoped black silicon with respect to surface morphology, sub‐bandgap absorptance, the sulfur concentration profile, and the effective minority carrier lifetime after Al2O3 surface passivation is investigated. The current flow behavior is compared through the hyperdoped layer by I–V measurements after hyperdoping with different pulse durations. For conditions that give the same absolute sub‐bandgap absorptance, an increase in pulse duration from 100 fs to 10 ps results in a shallower sulfur concentration profile. Findings are explained by an increasing ablation threshold from 0.19 J cm−2 for a pulse duration of 100 fs to 0.21 J cm−2 for 1 ps and 0.34 J cm−2 for 10 ps. The formation of an equally absorbing layer with a shallower doping profile results in a reduction in contact and/or sheet resistance. Despite the higher local sulfur concentration, the samples show no decrease in carrier lifetime measured by quasi‐steady‐state photoconductance decay on Al2O3 surface‐passivated samples. The investigation shows that longer pulses of up to 10 ps during laser hyperdoping of silicon result in advanced layer properties that promise to be beneficial in a potential device application.