Recombination Luminescence Research Articles

Low temperature recombination luminescence of Mg3Y2Ge3O12:Tb3+

A study was conducted to examine the recombination processes in persistent phosphor Mg3Y2Ge3O12:Tb3+ garnet at low temperatures. Photoluminescence (PL), recombination luminescence (RL), electron paramagnetic resonance (EPR), and EPR detected by PL or RL were measured.In samples with low Tb3+ concentration, a broad PL and RL band around 400–450 nm and characteristic Tb3+ lines were observed. However, in samples with high Tb3+ concentration, only Tb3+ lines were present. Both the broad-band and the line components exhibit long-lasting tunneling luminescence with hyperbolic decay. After 263 nm UV irradiation signals of intrinsic electron (F-type) and hole (V-type) trapping centres were observed in the EPR spectra. Such signals were also observed in RL-detected EPR spectra, indicating that the broad RL band at low Tb3+ concentrations originates from tunneling recombination between these intrinsic traps. At high Tb3+ concentrations, the RL-EPR spectrum was not observed, suggesting that intrinsic electron and Tb-related hole trapping centres probably participate in the tunneling recombination.

On the glow of cremated remains: long-lived green photo-luminescence of heat-treated human bones.

The long-lived green luminescence of human bone (that has been heated to 600°C for a short duration) is attributed to a carbon quantum dot material (derived from collagen) encapsulated and protected by an inorganic matrix (derived from bone apatite) and is more intense in dense rigid and crystalline parts of (healthy) human bones. The strong collagen-apatite interaction results (upon decomposition) in a protective inorganic environment of the luminescent centers allowing long-lived triplet-based emission of a carbon (quantum) dot-like material at room temperature, as well as resilience against oxidation between 550 and 650°C. The graphitic black phase (obtained upon heating around 400°C) is a precursor to the luminescent carbon-based material, that is strongly interacting with the crystalline inorganic matrix. Human bone samples that have been heated to 600°C were subjected to steady-state and time-resolved spectroscopy. Excitation-emission matrix (EEM) luminescence spectroscopy revealed a broad range of excitation and emission wavelengths, indicating a heterogeneous system with a broad density of emissive states. The effect of low temperature on the heat-treated bone was studied with Cryogenic Steady State Luminescence Spectroscopy. Cooling the bone to 80K leads to a slight increase in total emission intensity as well as an intensity increase towards to red part of the spectrum, incompatible with a defect state model displaying luminescent charge recombination in the inorganic matrix. Time-resolved spectroscopy with an Optical Multichannel Analyzer (OMA) and Time Correlated Single Photon Counting (TCSPC) of these samples showed that the decay could be fitted with a multi-exponential decay model as well as with second-order decay kinetics. Confocal Microscopy revealed distinct (plywood type) structures in the bone and high intensity-fast decay areas as well as a spatially heterogeneous distribution of green and (fewer) red emissive species. The use of the ATTO 565 dye aided in bone-structure visualization by chemical adsorption. Conceptually our data interpretation corresponds to previous reports from the material science field on luminescent powders.

Ferroelectric Polarization‐Mediated Modulation of Optical Properties in 2D van der Waals Architectures

AbstractThe integration of 2D ferroelectric materials with 2D photoelectric materials presents a promising avenue for addressing issues related to controlled doping and device integration in layered semiconductors. The reversible and non‐volatile residual polarization inherent to ferroelectrics can provide stable n‐ or p‐type doping for 2D semiconductors. Despite advances in doping strategies for 2D materials, existing techniques, and post‐doping characterization methodologies exhibit limitations, including the challenge of achieving high‐resolution graphical depictions of doped structures. Here, a WS2/CuInP2S6 heterostructure is demonstarted whereby the residual polarization of ferroelectric CuInP2S6 regions with anti‐parallel directions supplies screening charges of opposite signs to WS2 monolayers. This notably alters the ratio of neutral excitons and negatively charged trions within the recombination luminescence of the direct‐gap semiconductor, thereby offering a viable approach for controllable, non‐volatile modulation in 2D systems. Beyond proposing a feasible strategy for patterned doping and effective regulation in 2D semiconductors through interface engineering, this work enhances the understanding of the interplay between ferroelectrics and semiconductors.

Low-energy radiative backgrounds in CCD-based dark-matter detectors

The reach of sub-GeV dark-matter detectors is at present severely affected by low-energy events from various origins. We present the theoretical methods to compute the single- and few-electron events that arise from secondary radiation emitted by high-energy particles as they pass through detector materials and perform a detailed simulation to quantify them at (Skipper) CCD-based experiments, focusing on the SENSEI data collected at Fermilab near the MINOS cavern. The simulations account for the generation of secondaries from Cherenkov and luminescent recombination radiation; photo-absorption in the bulk, backside layer, pitch adapter, and epoxy; the photon reflection and refraction at interfaces; thin-film interference; the roughness of the interfaces; the dynamics of charges produced in the highly doped CCD-backside-layers; and the partial charge collection on the CCD backside. We consider several systematic uncertainties, notably those stemming from the backside modeling, which we estimate with a “fiducial” and an “extreme” charge-diffusion model, with the former model being preferred due to better agreement with partial-charge collection data. We find that Cherenkov photons constitute about 30% of the observed single-electron events for both diffusion models; radiative recombination contributes negligibly to the event rate for the fiducial model, although it can dominate over Cherenkov for the extreme model. We also estimate the fraction of 2-electron events that arise from 1-electron event coincidences in the same pixel, finding that the entire 2-electron rate can be explained by coincidences of radiative events and spurious charge. Accounting for both radiative and non-radiative backgrounds, we project the sensitivity of future Skipper-CCD-based experiments to different dark-matter models. For light-mediator models with dark-matter masses of 1, 5, and 10 MeV, we find that future experiments with 10-kg-year exposures and successful background mitigation could have a sensitivity that is larger by 9, 3, and 2 orders of magnitude, respectively, when compared to an experiment without background improvements.

Excited state dynamics of Bi3+ centers in cubic Gd2O3

Photoluminescence characteristics of Gd2O3:Bi are studied in the 4.2–800 K temperature range by the time-resolved spectroscopy methods. Purely cubic structure of Gd2O3:Bi is confirmed by XRD. The luminescence of Bi3+(S6) and Bi3+(C2) centers is found to arise from the electron transitions from the emitting level of the triplet excited state of Bi3+, corresponding to the 3P1 → 1S0 transitions of the free Bi3+ ion. Relaxation processes in the triplet excited state of Bi3+ ions do not result in the population of the lowest-energy metastable level. The absence of the radiative transitions, corresponding to the 3P0 → 1S0 transitions of the free Bi3+ ion, explains the short (0.3–2.0 μs) decay time of the triplet emission of Bi3+ even at 4.2 K. The conclusion is made that the fast luminescence decay cannot be caused by the mixing of the metastable and emitting levels of the triplet excited state of Bi3+ by the magnetic field created at the Bi3+ site by the magnetically ordered Gd3+ sublattice. The electron transfer and recombination processes, resulting in the appearance of the photo- and thermally stimulated electron recombination luminescence of Bi3+(S6) and Bi3+(C2) centers under excitation in the Eexc > 4.3 eV energy region, are also discussed. The energy level positions of the Bi3+(S6) and Bi3+(C2) centers in the band gap of Gd2O3 are estimated.

A Review: Principles and Applications of High-Pressure In Situ Time-Resolved Transient Absorption Spectroscopy

Time-resolved transient absorption (TA) spectroscopy measurement technology provides detailed information into the ultrafast dynamics by tracking the transitions and deactivation processes of the excited-state carriers, which holds vast potential for investigating processes related to the luminescence and nonradiative recombination of materials. Pressure is considered a potent tool for tuning the carrier dynamic behaviors. The combination of high-pressure experimental technology and time-resolved TA spectroscopy measurement technology enables researchers to reveal the inherent relation between the structure and optical properties of materials, which is crucial for optimizing material performance and applications in the field of optoelectronics. In this review, the principles and the theoretical foundations of high-pressure time-resolved TA spectroscopy measurement technology will be introduced, and the research advancements in ultrafast dynamics processes of materials under high pressure will be summarized and discussed. In addition, we will expound on the future prospects of time-resolved TA spectroscopy measurement technology to detect the ultrafast dynamic behaviors of materials and complexes under the coregulation of temperature and pressure.

Luminescence of AlN:Mn2+ materials: Properties and mechanisms

Luminescence processes resulting in 600 nm emission of Mn2+ ions in AlN:Mn ceramics were studied based on investigations of photoluminescence and its excitation spectra, luminescence kinetics and long-lasting luminescence (PersL) properties. For AlN:Mn2+ nanopowders, the photoluminescence spectra and PersL were studied. Luminescence properties were examined and compared after the samples were irradiated with 520 nm light, resulting in direct excitation of Mn2+ ions, thus causing the intra-center luminescence, or with 263 nm light. As known, in the last case, the oxygen-related defects are primarily excited with the following energy transfer to Mn2+ ions and 600 nm emission, thus forming the recombination luminescence (RecL). Two types of excitations of the 600 nm RecL were used. In the first case, the luminescence response was detected during the sample irradiation with 263 nm light. It was found that at RT, the decay of the RecL is fast and its decay constant τ = 1.2 ms coincides with the value obtained for the intra-center luminescence. A time-dependent rise of the 600 nm luminescence intensity under 263 nm excitation was observed. In the other case, the 600 nm RecL was detected when irradiation of the sample with 263 nm light was ceased, and spectra and decay of PersL were studied. It was found that the decay of 600 nm PersL spectra could be described using three exponential functions, thus manifesting a variety of luminescence processes. The results allow tracing of the luminescence processes and proposal of the mechanisms resulting in the 600 nm light emission of Mn2+ ions. An energy level scheme of AlN:Mn2+ was constructed to elucidate of the luminescence processes and mechanisms.

High‐Performance Cadmium‐Free Blue Quantum Dot Light‐Emitting Devices with Stepwise Double Hole‐Transport Layers

AbstractZnSe/ZnS core/shell quantum dots (QDs) are environmental‐friendly blue light‐emitting material, which can easily achieve deep blue emission upon external excitation. However, its deep valence band (VB) and numerous defect states remain handicap to realize sufficient performance of quantum dot light‐emitting diodes (QLEDs). In this work, high‐performance cadmium‐free ZnSe/ZnS QLEDs by constructing a double organic hole‐transport layer (HTL) to obtain carrier balance are presented. The double HTLs, which consist of poly(9,9‐dioctylfluorene‐co‐N‐(4‐butylphenyl)diphenylamine) (TFB) and 2,7‐dioctyl[1]benzothieno[3,2‐b][1]benzothiophene (C8‐BTBT), can suppress the accumulation of electrons between the HTL and the emissive layer (EML), leading to more hole and electron recombination luminescence in QD layer. In addition, the C8‐BTBT layer is conducive to improve the uniformity of QDs film. Thus, the resulting device achieves an external quantum efficiency of 7.23% with TFB/C8‐BTBT double HTLs, which is almost 150% higher than that of traditional devices based on a single hole‐transport layer (4.84%). The authors anticipate that these results can provide a guidance for the optimization of cadmium‐free blue QLEDs.

Spectral and kinetic properties of silver sulfide quantum dots in an external electric field

The effect of an external electric field on the luminescence characteristics of silver sulfide nanoparticles embedded in a film based on an optically passive dielectric matrix has been studied. The luminescence characteristics were studied using methods of optical and time-resolved spectroscopy involving the time-correlated single-photon counting technique. The morphology of the nanoparticles was studied using transmission electron microscopy. It was shown that in an external electric field, an increase in the intensity of the recombination luminescence band is observed for silver sulfide nanoparticles, together with an increase in the electronic relaxation rate. This effect is explained by the fact that the electric field enhances the transport of free holes to electron traps which are radiative recombination centers. The observed effects indicate that silver sulfide nanoparticles can be effectively used as active layers of organic light-emitting diodes, where an external field of the order of 500 kV/cm will not lead to a deterioration in their operating luminescence characteristics.

Study on the enhancement mechanism of luminescent performance of Ag structures on the surface of nano-giant topological luminophor

Y2O3:Eu3++Octadecylamine(ODA)+Dodecylamine(DDA)+Ag giant topological luminophor with a gradient porous structure provides a new thought and approach to greatly improve the luminescent performance of rare-earth-doped nanocomposites phosphors. However, the enhancement mechanism of Ag topological structure, during process of synergistic enhancement, has not been clearly demonstrated and verified by simulation. Based on the quantum size effect of nanomaterials, a nano-giant topological luminophor Y2O3:Eu3++ODA+DDA+Ag was synthesized by solvothermal method in this paper. The experimental results show that the luminescence intensity of Y2O3:Eu3++ODA+DDA+Ag is increased by a substantial improvement of about 700% than that of nano Y2O3:Eu3+ luminophor under the same test conditions, in the synergy mechanism of Ag topological structures and the gradient porous which composed of differently sized pores, with Ag structures accounting for about 45% of the enhancement. On the basis of density functional calculations, the absorption of representative Ag nanoparticles (NPs) in the visible light region(200–900 nm) and its influence on the local electric field around NPs were calculated in this paper. The finite difference time domain simulation results suggested that the surface plasmon resonance of the Ag NPs sharply enhanced the radiative transition of samples. Photoluminescence and electroluminescence experimental results verified the enhancement mechanism of Y2O3:Eu3++ODA+DDA+Ag and the existing form of the Ag NPs. The recombination luminescence induced by the Ag topological structures composed of Ag NPs on the surface of the sample is a crucial part in enhancing the luminescent performance.

Luminescence and defects creation processes in Bi3+-doped gallium garnets

Microcrystalline powders of Y3Ga5O12:Bi and Gd3Ga5O12:Bi are investigated by the X-ray diffraction, scanning electron microscopy, time-resolved photoluminescence, and thermally stimulated luminescence methods in a wide temperature range (4.2–500 K). The results are compared with those obtained recently for the Lu3Ga5O12:Bi powder. The presence of the ultraviolet (UV) emission of a Bi3+ ion and the visible (VIS) emission of an exciton localized around the Bi3+ ion is confirmed for all the investigated gallium garnets. The processes of photostimulated creation of electron and hole centers taking place under irradiation in the 4–6 eV energy range are investigated. The origin of the hole centers responsible for the UV and VIS electron recombination luminescence is clarified. Electron transitions between the energy levels of Bi3+ ions and the Bi3+ → Ga3+oct, Bi3+ → Ga3+tetr, and Bi3+ → Y3+ or Bi3+ → Gd3+ electron transfer transitions are found to appear in the photo- and thermoluminescence excitation spectra. The Bi3+ energy level positions in the band gap are determined. Their influence on the luminescence and photostimulated creation of electron and hole centers is discussed.

Spectroscopy and photoluminescence of complex lead-silicate glass doped with copper

The EPR, XRD, IR transmission, optical absorption, photoluminescence and its decay kinetics in lead-silicate glass with complex 0.521Pb3O4-0.371SiO2-0.068ZnO-0.027K2O-0.013BaO composition, doped with CuO (or PbSiZnKBaO:CuO) were studied. The observed characteristic EPR spectrum of the Cu2+ (3d9, 2D5/2) paramagnetic ions were adequately described using the spin Hamiltonian formalism. Average interatomic distances and coordination numbers for main structural units, SiO4 and PbOn (n = 4–6), in the network of studied glass were determined from radial distribution functions. Broad absorption band with a peak about 870 nm was ascribed to the 2B1g → 2B2g transition of the Cu2+ centers. Optical band gap and Urbach energy of the studied glass were evaluated. Photoluminescence spectra and decay curve of the Cu+ (3d10, 1S0) centers in PbSiZnKBaO:CuO glass were registered and interpreted. The PbSiZnKBaO:CuO glass upon UV excitation demonstrates intense emission band at 574 nm with fast kinetics belonging to intrinsic recombination luminescence.

First-principles investigation of a-line Shockley partial dislocations in wurtzite GaN: core reconstruction and electronic structure

Αtomistic simulations based on density functional theory were performed to investigate Shockley partial dislocations, parallel to the <11–20> direction, in wurtzite gallium nitride. The cores of both 30° and 90° Shockley partial dislocations, their possible reconstructions and their electronic structures were analyzed and compared systematically. Shockley partial dislocations were found to have a variety of core structures while exhibiting different bonding states like: deformed Ga–N bonds, Ga–Ga and N–N homo-nuclear bonds, as well as Ga– and N–dangling bonds. We have demonstrated that the core reconstruction of these dislocations is not always energetically favourable in wurtzite GaN, as it is the case in elemental semiconductors. It results from interplay between the energy gain from eliminating dangling and forming homo-nuclear bonds and the energy excess from the induced strain of hetero-nuclear Ga–N bonds within the core. Depending on their core configurations, Shockley partial dislocations are expected to have different electronic behaviours in wurtzite GaN, as they can act either as sources of parasitic luminescence or non-radiative recombination centres, or give pathways to leakage currents. We have demonstrated that deep states associated with dislocations are not due to the dangling bonds, as generally believed, but rather to Ga–Ga bonds in their cores, and that N–N bonds do not lead to any gap states. These results are of high relevance as guidelines in defect engineering strategies aiming at producing dislocations with a particular electronic behaviour in wurtzite GaN.

Low-temperature recombination luminescence of La-doped Ca2SnO4

Low-temperature ultraviolet-excited photoluminescence (PL) and recombination luminescence (RL) properties of La-doped Ca2SnO4 have been investigated by luminescence, electron paramagnetic resonance (EPR) and optically-detected magnetic resonance (ODMR) techniques. Two PL and RL bands at 340 nm and 450 nm have been observed. PL excitation spectra measurements with a synchrotron source showed a significant difference between the 450 nm and the 340 nm PL bands. The 450 nm band has a long-lasting hyperbolic decay, while the 350 nm band shows a fast decay. Assuming an excitonic nature of the 340 nm band, the band gap of the Ca2SnO4:La has been estimated to be approximately 5.5 eV. ODMR measurements suggest that the low-temperature RL band at 450 nm is caused by tunnelling recombination of electron trap and hole trap centres, and the recombination energy is transferred to Sn2+ luminescence centres.

Luminescence of ZnWO4 crystals under X-ray excitation

Zinc tungstate crystal scintillator is an interesting detector material for double beta decay, dark matter, and rare alpha decay experiments. The luminescence under X-ray excitation in the temperature region from 85 K to 420 K was studied with five samples of ZnWO4 crystals developed by different methods: with a stoichiometric composition, and with excess of Zn or W. It is found that doping a ZnWO4 crystal with 0.2–0.3% Zn and W does not affect the luminescence properties of the material. A theoretical dependence of the sample luminescence intensity on the competing nonradiative recombination centers and traps is obtained. The main center of the recombination luminescence in a ZnWO4 crystal with a spectral maximum at 2.5 eV is the tungsten complex with a structural defect located next to it.

Luminescence of AlN:Eu ceramics: Properties and mechanisms

Luminescence processes of AlN:Eu ceramics, prepared by high temperature spark plasma sintering method, were studied basing on material spectral characterization by measuring of photoluminescence and excitation spectra at different fixed temperatures within a region from 10 K up to room temperature, together with measurement of luminescence kinetics. In this material the Eu2+ ion emission at 530 nm is dominant, besides, a weak Eu3+ ion emission also is observed at ∼600 nm. Two main spectral regions for excitation of Eu2+ emission are located around 360 nm and 260 nm. Analysis of the results obtained demonstrates a presence of two luminescence mechanisms, which are originating the 530 nm emission. It was found that the 530 nm emission caused by 360 nm excitation represents the intra-center mechanism of Eu2+ ion luminescence, whereas the 260 nm exciting light is causing the recombination luminescence. The mechanism of the tunneling recombination luminescence is proposed. Regarding to Eu3+ ions, an excitation line at 464 nm was found that together with the 614 nm emission represents the intra-center luminescence. The persistent luminescence caused by Eu ions in AlN lasting within a time scale of hours is revealed.

Intense Luminescence and Good Thermal Stability in a Mn2+-Activated Mg-Based Phosphor with Self-Reduction.

White light-emitting diodes provide widespread applications in lighting, electronic equipment, and high-tech displays. However, thermal quenching effect severely limits their practical application. Here, we developed an orange-red phosphor β-KMg(PO3)3:Mn2+, which emits bright orange-red light when excited by ultraviolet light without the energy transfer of sensitizer, owing to the strong crystal field provided by β-KMg(PO3)3 for Mn2+. The self-reduction of Mn4+ → Mn2+ and good thermal stability have been realized in an ambient atmosphere. The defect types were verified by X-ray photoelectron spectroscopy, and cationic vacancy plays a significant role in the self-reduction of Mn4+ → Mn2+. Furthermore, the properties of the trap energy levels were studied by thermoluminescence. The recombination luminescence of the detrapped carriers released from the deep trap levels at high temperatures suppresses the luminescence loss of thermal quenching. Moreover, the trap energy levels play an important role in the mechanoluminescence of β-KMg(PO3)3:Mn2+. This work emphasizes the significance of the defects in the luminescent characteristics and opens up a new approach for the development of advanced optical functional materials.

Band Gap Engineering and Trap Depths of Intrinsic Point Defects in RAlO3 (R = Y, La, Gd, Yb, Lu) Perovskites

The possibility of band gap engineering (BGE) in RAlO3 (R = Y, La, Gd, Yb, Lu) perovskites in the context of trap depths of intrinsic point defects was investigated comprehensively using experimental and theoretical approaches. The optical band gap of the materials, Eg, was determined via both the absorption measurements in the VUV spectral range and the spectra of recombination luminescence excitation by synchrotron radiation. The experimentally observed effect of Eg reduction from ∼8.5 to ∼5.5 eV in RAlO3 perovskites with increasing R3+ ionic radius was confirmed by the DFT electronic structure calculations performed for RMIIIO3 crystals (R = Lu, Y, La; MIII = Al, Ga, In). The possibility of BGE was also proved by the analysis of thermally stimulated luminescence (TSL) measured above room temperature for the far-red emitting (Y/Gd/La)AlO3:Mn4+ phosphors, which confirmed decreasing of the trap depths in the cation sequence Y → Gd → La. Calculations of the trap depths performed within the super cell approach for a number of intrinsic point defects and their complexes allowed recognizing specific trapping centers that can be responsible for the observed TSL. In particular, the electron traps of 1.33 and 1.43 eV (in YAlO3) were considered to be formed by the energy level of oxygen vacancy (VO) with different arrangement of neighboring YAl and VY, while shallower electron traps of 0.9–1.0 eV were related to the energy level of YAl antisite complexes with neighboring VO or (VO + VY). The effect of the lowering of electron trap depths in RAlO3 was demonstrated for the VO-related level of the (YAl + VO + VY) complex defect for the particular case of La substituting Y.

Bright and Stable Light-Emitting Diodes Based on Perovskite Quantum Dots in Perovskite Matrix.

Light-emitting diodes (LEDs) based on metal halide perovskite quantum dots (QDs) have achieved impressive external quantum efficiencies; however, the lack of surface protection of QDs, combined with efficiency droop, decreases device operating lifetime at brightnesses of interest. The epitaxial incorporation of QDs within a semiconducting shell provides surface passivation and exciton confinement. Achieving this goal in the case of perovskite QDs remains an unsolved challenge in view of the materials' chemical instability. Here, we report perovskite QDs that remain stable in a thin layer of precursor solution of perovskite, and we use strained QDs as nucleation centers to drive the homogeneous crystallization of a perovskite matrix. Type-I band alignment ensures that the QDs are charge acceptors and radiative emitters. The new materials show suppressed Auger bi-excition recombination and bright luminescence at high excitation (600 W cm-2), whereas control materials exhibit severe bleaching. Primary red LEDs based on the new materials show an external quantum efficiency of 18%, and these retain high performance to brightnesses exceeding 4700 cd m-2. The new materials enable LEDs having an operating half-life of 2400 h at an initial luminance of 100 cd m-2, representing a 100-fold enhancement relative to the best primary red perovskite LEDs.

High-Efficiency Down-Conversion Radiation Fluorescence and Ultrafast Photoluminescence (1.2 ns) at the Interface of Hybrid Cs4PbBr6-CsI Nanocrystals.

The research of fast scintillators in positron emission tomography and other applications based on time-of-flight technology promotes the development of radiation detection. However, because of the current lack of efficient and fast carrier radiation recombination pathways, the research on scintillator radioluminescence (RL) still faces severe challenges. Here, we propose an effective interface carrier transport mechanism: CsI:Na crystal and Cs4PbBr6 nanocrystals (NCs) interface to form a new phase and a continuous heterostructure, providing an effective channel for X-ray excited carrier transfer to Cs4PbBr6. Then, the excited carriers realize efficient recombination luminescence through the self-trapped excitons inside Cs4PbBr6. On the basis of this mechanism, the heterostructure composite scintillator composed of CsI:Na/Cs4PbBr6 exhibits high-efficiency radiant fluorescence and an ultrafast photoluminescence (PL) decay time of 1.22 ns. The effective interface carrier transport shown in this work provides an optimization idea that can be used for reference in the research of fast scintillators.