A theory is presented, based on the Faddeev equations, for direct two-body recombination of hydrogen atoms on a liquid helium surface. The equations developed are applicable to hydrogen or deuterium atoms in any spin state, but are applied in particular to dipolar recombination ofb state hydrogen atoms. The equations yield terms corresponding to one- and two-step processes. These terms are calculated for low temperatures (T-0.1 to 1.1 K) and high field strengths (B=4 to 14 T). The one-step term increases slowly withB, while the two-step term is rapidly decreasing. While the overall rate is quite small (∼5×10−18 cm2/s) compared to recombination by two-body spin-relaxation, the results have important consequences in understanding the experimentally measured three-atom dipolar surface recombination rates. In three-atom recombination, where the role of spin-relaxation and the two-atom one-step processes are repressed, the role of the underlying two-atom, two-step process is enhanced. The field dependence of the process relevant to the three-atom system is calculated and found to be in fairly good agreement with the experimental three-atom data. The role of possible liquid excitations in enhancing the contribution of the two-step processes is also discussed.
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