Reciprocal Space Mapping Research Articles

Thin Films of BaM Hexaferrite with an Inclined Orientation of the Easy Magnetization Axis: Crystal Structure and Magnetic Properties

Thin (~50 nm thick) BaM hexaferrite (BaFe12O19) films were grown on (1–102) and (0001) cut α-Al2O3 (sapphire) substrates via laser molecular beam epitaxy using a one- or two-stage growth protocol. The advantages of a two-stage protocol are shown. The surface morphology, structural and magnetic properties of films were studied using atomic force microscopy, reflected high-energy electron diffraction, three-dimensional X-ray diffraction reciprocal space mapping, powder X-ray diffraction, magneto-optical, and magnetometric methods. Annealed BaFe12O19/Al2O3 (1–102) structures consist of close-packed islands epitaxially bonded to the substrate. The hexagonal crystallographic axis and the easy axis (EA) of the magnetization of the films are deflected from the normal to the film by an angle of φ~60°. The films exhibit magnetic hysteresis loops for both in-plane Hin-plane and out-of-plane Hout-of-plane magnetic fields. The shape of Mout-of-plane(Hin-plane) and Min-plane(Hin-plane) hysteresis loops strongly depends on the azimuth θ of the Hin plane, confirming the tilted orientation of the EA. The Mout-of-plane(Hout-of-plane) magnetization curves are caused by the reversible rotation of magnetization and irreversible magnetization jumps associated with the appearance and motion of domain walls. In the absence of a magnetic field, the magnetization is oriented at an angle close to φ.

Fabrication of 0.6 eV Bandgap In0.69Ga0.31As Thermophotovoltaic Cells and Its System Demonstration

Thermophotovoltaic (TPV) is a promising energy conversion technology that can absorb the heat from a thermal radiator and transfer it into power. As the most significant energy converter, TPV cells need a narrower bandgap to realize a wider absorption spectrum range. In this work, the fabrication and characterization of single‐junction In0.69Ga0.31As TPV cells with a bandgap of 0.6 eV are presented. The main structure is grown on an InP substrate through metal‐organic chemical vapor deposition. Step‐graded InAsyP1−y buffer layers are used to mitigate the dislocations by relaxing the stress induced by lattice mismatch completely. Analysis of the composition, strain relaxation, layer tilt, and crystalline quality of each layer is demonstrated using triple‐axis X‐ray reciprocal space mapping and transmission electron microscopy. According to the tested results, each layer is found to be nearly fully relaxed and the InGaAs active layer grown on the buffer displays a high crystal quality. External quantum efficiency achieves 90% at 1100–1500 nm. Additionally, a TPV test platform is constructed to evaluate the cell performance. The maximum efficiency of the lattice‐mismatched TPV cell reaches 21.92% operating at a power density of 267.4 mW cm−2 and an emitter temperature of 1200 °C.

Colossal Strain Tuning of Ferroelectric Transitions in KNbO3 Thin Films.

Strong coupling between polarization (P) and strain (ɛ) in ferroelectric complex oxides offers unique opportunities to dramatically tune their properties. Here colossal strain tuning of ferroelectricity in epitaxial KNbO3 thin films grown by sub-oxide molecular beam epitaxy is demonstrated. While bulk KNbO3 exhibits three ferroelectric transitions and a Curie temperature (Tc) of ≈676K, phase-field modeling predicts that a biaxial strain of as little as -0.6% pushes its Tc >975K, its decomposition temperature in air, and for -1.4% strain, to Tc >1325K, its melting point. Furthermore, a strain of -1.5% can stabilize a single phase throughout the entire temperature range of its stability. A combination of temperature-dependent second harmonic generation measurements, synchrotron-based X-ray reciprocal space mapping, ferroelectric measurements, and transmission electron microscopy reveal a single tetragonal phase from 10 K to 975K, an enhancement of ≈46% in the tetragonal phase remanent polarization (Pr),and a ≈200% enhancementin its optical second harmonic generation coefficients over bulk values. These properties in a lead-free system, but with properties comparable or superior to lead-based systems, make it an attractive candidate for applications ranging from high-temperature ferroelectric memory to cryogenic temperature quantum computing.

Structural and optical properties of Eu-doped ZnO epitaxial thin films grown by pulsed-laser deposition

Pulsed-laser deposition was utilized to fabricate Eu-doped ZnO epitaxial films on c-plane sapphire substrates with Eu concentrations ranging from 0.5 to 4.0 at. %. The structural properties were analyzed using x-ray diffraction surface normal radial scans and azimuthal cone scans, which confirmed the epitaxy of the film samples. Reciprocal space mapping was performed on ZnO(101̄1) to visualize the effect of Eu incorporation. X-ray fluorescence mapping confirmed the homogeneous distribution of Zn and Eu, and x-ray absorption near-edge structure spectra directly confirmed the trivalent state of Eu ions. The optical properties were assessed using temperature-dependent photoluminescence (PL). Various defects were identified. With increasing Eu dopant concentration, PL emissions from defects and the Eu 4f-intraband transitions gradually became the predominant features in the PL spectra at low temperatures. Furthermore, PL analysis suggested that Eu ions substituted Zn, occupying sites with lower C3v symmetry due to the distortion caused by Eu incorporation.

Toward crack-free AlN growth on silicon (111) by introducing boron incorporated buffer layer via MOCVD

High-quality aluminum nitride (AlN) films on silicon substrates are crucial for various applications due to their inherent properties as wide-bandgap semiconductors, cost-effectiveness, and compatibility with silicon-based circuits. Nonetheless, producing high-quality and crack-free AlN on silicon presents significant challenges due to the stress caused by lattice and thermal expansion mismatches. This study introduces a method to mitigate these challenges by incorporating a boron precursor during the metalorganic chemical vapor deposition process to form a BAlN buffer layer. Analytical techniques, such as secondary ion mass spectrometry, atomic force microscopy imaging, XRD rocking curves, reciprocal space map, and Raman spectroscopy, indicate that the BAlN buffer layer promotes the enlargement of seed crystal size, which effectively delays AlN coalescence, mitigates accumulated tensile stress, and enhances the overall crystal quality. Employing this technique has produced a 520 nm thick, crack-free AlN film on silicon (111) with high crystal quality, achieving full width at half maximum values of only 0.2° and 0.3° for XRC (002) and (102), respectively.

Composition analysis of β-(In x Ga1-x )2O3 thin films coherently grown on (010) β-Ga2O3 via mist CVD

ABSTRACT This study investigates the compositional analysis and growth of β-(In x Ga1-x )2O3 thin films on (010) β-Ga2O3 substrates using mist chemical vapor deposition (CVD), including the effects of the growth temperature. We investigated the correlation between In composition and b-axis length in coherently grown films, vital for developing high-electron-mobility transistors and other devices based on β-(In x Ga1-x )2O3. Analytical techniques, including X-ray diffraction (XRD), reciprocal space mapping, and atomic force microscopy, were employed to evaluate crystal structure, strain relaxation, and surface morphology. The study identified a linear relationship between In composition and b-axis length in coherently grown films, facilitating accurate composition determination from XRD peak positions. The films demonstrated high surface flatness with root-mean-square roughness below 0.6 nm, though minor relaxation and granular features emerged at higher In compositions (x = 0.083) at the growth temperature of 750°C. XRD results revealed that lattice relaxation were observed at a growth temperature of 700°C despite low In composition. In contrast, at 800°C, the In composition was higher than at 750°C, and coherent growth was achieved. The surface morphology was the flattest at 750°C. These findings indicate that the growth temperature plays a crucial role in the mist CVD growth of β-(In x Ga1-x )2O3 thin films. This study offers insights into the relationship between In composition and lattice parameters in coherently grown β-(In x Ga1-x )2O3 films, as well as the effect of growth conditions, contributing to the advancement of ultra-wide bandgap semiconductor device development.

Selective area epitaxy of gallium phosphide-based nanostructures on microsphere lithography-patterned Si wafers for visible light optoelectronics

In this study, we present the selective area plasma-assisted molecular beam epitaxial growth of GaP-based nanoheterostructures (nanostubs), incorporating direct bandgap GaAsP or GaPN segments, on patterned SiO2/Si(001) wafers. A microsphere optical lithography and anisotropic Si wet-etching techniques were employed for wafer-scale surface patterning through SiO2 growth mask, allowing to obtain either planar or pyramidal pit nucleation site morphologies. X-ray diffraction reciprocal space mapping and Raman microspectroscopy studies confirm compositional homogeneity of the nanostub arrays. The dilute nitride nanostubs display the narrowest and most intense visible red photoluminescence response at room temperature, which is an order of magnitude higher compared to the GaAsP ones. The formation of the nitrogen sub-band in GaPN alloy was confirmed in the framework of density functional theory, providing insights for interpreting the experimental results. These findings demonstrate the feasibility of the proposed approach for fabricating the ordered arrays of nanoscale visible light emitters on silicon.

Oxygen Vacancy Compensation-Induced Analog Resistive Switching in the SrFeO3-δ/Nb:SrTiO3 Epitaxial Heterojunction for Noise-Tolerant High-Precision Image Recognition.

Neuromorphic computing, inspired by the brain's architecture, promises to surpass the limitations of von Neumann computing. In this paradigm, synaptic devices play a crucial role, with resistive switching memory (memristors) emerging as promising candidates due to their low power consumption and scalability advantages. This study focuses on the development of metal/oxide-semiconductor heterojunctions, which offer several technological advantages and have broad potential for applications in artificial neural synapses. However, constructing high-quality epitaxial interfaces between metal and oxide semiconductors and designing modifiable contact barriers are challenging. Herein, we construct high-quality epitaxial metal/semiconductor interfaces based on the metallicity of the perovskite phase SrFeO3-δ (PV-SFO) and a small Schottky barrier in contact with Nb-doped SrTiO3 (NSTO). X-ray diffraction patterns, reciprocal space mapping results, and cross-sectional transmission electron microscopy images reveal that the prepared PV-SFO film exhibits a perfect single-crystal structure and an excellent epitaxial interface with the NSTO (111) substrate. The corresponding memristor exhibits analog-type resistive-variable characteristics with an ON/OFF ratio of ∼1000, stable data retention after 10,000 s, and no noticeable fluctuation in resistance after 10,000 pulse cycles. Electron energy loss spectroscopy, first-principles calculations, and electrical measurements reveal that compensating or restoring oxygen vacancies at the NSTO surface decreases or increases the contact barrier between PV-SFO and NSTO, respectively, thereby gradually regulating the resistance value. Furthermore, high-quality epitaxial PV-SFO/NSTO devices achieve up to 98.21% recognition accuracy for handwriting recognition tasks using LeNet-5-based network structures and 92.21% accuracy for color images using visual geometry group (VGG) network structures. This work contributes to the advancement of interface-type memristors and provides valuable insights into enhancing synaptic functionality in neuromorphic computing systems.

Gate induced metallicity and absence of superconductivity in BSTO/LCO heterostructure

We fabricated Ba0.8Sr0.2TiO3 (BSTO)/La2CuO4 (LCO) heterostructure on SrTiO3 (STO) substrate and investigated its structure and physical properties. X-ray diffraction and reciprocal space mapping confirm the epitaxial growth of BSTO/LCO/STO heterostructure. X-ray photoelectron spectroscopy and UV–Visible spectroscopy measurements reveal a straddling band alignment of the BSTO/LCO heterojunction. Such band alignment facilitates the accumulation of both electrons and holes at the interface. Their movement depends on the direction of the internal field of the BSTO film. Electrical transport measurements have revealed a signature of insulator-to-metal transition (IMT) in response to applied gate voltages ±Vg. Hall measurements confirm the presence of electron and hole type charge carriers under ＋Vg and −Vg, respectively. We have proposed a screening mechanism linked to the polarization state of the BSTO film to explain the observed IMT.

Growth Conditions and Interfacial Misfit Array in SnTe (111) Films Grown on InP (111)A Substrates by Molecular Beam Epitaxy.

Tin telluride (SnTe) is an IV-VI semiconductor with a topological crystalline insulator band structure, high thermoelectric performance, and in-plane ferroelectricity. Despite its many applications, there has been little work focused on understanding the growth mechanisms of SnTe thin films. In this manuscript, we investigate the molecular beam epitaxy synthesis of SnTe (111) thin films on InP (111)A substrates. We explore the effect of substrate temperature, Te/Sn flux ratio, and growth rate on the film quality. Using a substrate temperature of 340 °C, a Te/Sn flux ratio of 3, and a growth rate of 0.48 Å/s, fully coalesced and single crystalline SnTe (111) epitaxial layers with X-ray rocking curve full-width-at-half-maxima of 0.09° and root-mean-square surface roughness as low as 0.2 nm have been obtained. Despite the 7.5% lattice mismatch between the SnTe (111) film and the InP (111)A substrate, reciprocal space mapping indicates that the 15 nm SnTe layer is fully relaxed. We show that a periodic interfacial misfit (IMF) dislocation array forms at the SnTe/InP heterointerface, where each IMF dislocation is separated by 14 InP lattice sites/13 SnTe lattice sites, providing rapid strain relaxation and yielding the high quality SnTe layer. This is the first report of an IMF array forming in a rock-salt on zinc-blende material system and at an IV-VI on III-V heterointerface, and highlights the potential for SnTe as a buffer layer for epitaxial telluride film growth. This work represents an important milestone in enabling the heterointegration between IV-VI and III-V semiconductors to create multifunctional devices.

Investigating the missing-wedge problem in small-angle X-ray scattering tensor tomography across real and reciprocal space.

Small-angle-scattering tensor tomography is a technique for studying anisotropic nanostructures of millimetre-sized samples in a volume-resolved manner. It requires the acquisition of data through repeated tomographic rotations about an axis which is subjected to a series of tilts. The tilt that can be achieved with a typical setup is geometrically constrained, which leads to limits in the set of directions from which the different parts of the reciprocal space map can be probed. Here, we characterize the impact of this limitation on reconstructions in terms of the missing wedge problem of tomography, by treating the problem of tensor tomography as the reconstruction of a three-dimensional field of functions on the unit sphere, represented by a grid of Gaussian radial basis functions. We then devise an acquisition scheme to obtain complete data by remounting the sample, which we apply to a sample of human trabecular bone. Performing tensor tomographic reconstructions of limited data sets as well as the complete data set, we further investigate and validate the missing wedge problem by investigating reconstruction errors due to data incompleteness across both real and reciprocal space. Finally, we carry out an analysis of orientations and derived scalar quantities, to quantify the impact of this missing wedge problem on a typical tensor tomographic analysis. We conclude that the effects of data incompleteness are consistent with the predicted impact of the missing wedge problem, and that the impact on tensor tomographic analysis is appreciable but limited, especially if precautions are taken. In particular, there is only limited impact on the means and relative anisotropies of the reconstructed reciprocal space maps.

Nanoscopic analysis of rapid thermal annealing effects on InGaN grown over Si(111)

This study explores the impact of rapid thermal annealing (RTA) on InxGa1-xN grown over Si(111) by molecular beam epitaxy (MBE). Through X-ray diffraction (XRD) and reciprocal space map (RSM) characterization, notable shifts in diffraction peaks were observed post-annealing, suggesting alterations of the Indium content in the nanostructures. Morphological assessments using scanning electron microscopy (SEM) and atomic force microscopy (AFM) indicated that RTA could smooth the surface of the samples, though some instances of degradation were also noted. Energy-dispersive X-ray spectroscopy (EDS) showed further stoichiometric modification following annealing. Photoluminescence spectroscopy (PL) revealed notable shifts and increases in the intensity of the InxGa1-xN peaks, indicating the formation of regions with high Indium or Gallium concentration. The presence of these enriched regions was particularly evident from the peaks at around 540 nm and 433 nm, suggesting significant changes in the material's composition. Transmission electron microscopy combined with electron energy loss spectroscopy (TEM-EELS) corroborated the presence of In-rich and Ga-rich areas, affirming the phenomenon of Indium surface segregation. So, this study contributes to understanding the behavior of InxGa1-xN nanostructures under rapid thermal annealing, providing insights for advanced optoelectronic applications.

Dislocation structure evolution during metal additive manufacturing

Abstract Dislocation structures are abundantly present in any additively manufactured alloy and they play a primary role in determining the mechanical response of an alloy. Until recently, it was understood that these structures form due to rapid solidification during AM. However, there was no consensus on whether they evolve due to the subsequent solid-state thermal cycling that occurs with further addition of layers. In order to design alloy microstructures with desired mechanical responses, it is crucial to first answer this outstanding question. This question was answered in a recent work [1] involving a novel experiment employing high resolution reciprocal space mapping, a synchrotron based X-ray diffraction technique, in situ during AM of an austenitic stainless steel. The study revealed that dislocation structures formed during rapid solidification undergo significant evolution during subsequent solid-state thermal cycling, in particular during addition of the first few (up to 5) layers above the layer of interest. A summary of the findings of this study are presented in this work. A possible pathway (involving experiment and modelling synergy) to better understanding dislocation structure formation during AM is presented.

Pinpointing lattice-matched conditions for wurtzite ScxAl1−xN/GaN heterostructures with x-ray reciprocal space analysis

Using comprehensive x-ray reciprocal space mapping, we establish the precise lattice-matching composition for wurtzite ScxAl1−xN layers on (0001) GaN to be x = 0.14 ± 0.01. 100 nm thick ScxAl1−xN films (x = 0.09–0.19) were grown in small composition increments on c-plane GaN templates by plasma-assisted molecular beam epitaxy. The alloy composition was estimated from the fit of the (0002) x-ray peak positions, assuming the c-lattice parameter of ScAlN films coherently strained on GaN increases linearly with Sc-content determined independently by Rutherford backscattering spectrometry [Dzuba et al., J. Appl. Phys. 132, 175701 (2022)]. Reciprocal space maps obtained from high-resolution x-ray diffraction measurements of the (101¯5) reflection reveal that ScxAl1−xN films with x = 0.14 ± 0.01 are coherently strained with the GaN substrate, while the other compositions show evidence of relaxation. The in-plane lattice-matching with GaN is further confirmed for a 300 nm thick Sc0.14Al0.86N layer. The full-width-at-half-maximum of the (0002) reflection rocking curve for this Sc0.14Al0.86N film is 106 arc sec and corresponds to the lowest value reported in the literature for wurtzite ScAlN films.

Growth Mechanism of N‐Polar GaN on Vicinal N‐Polar AlN Templates in Metal‐Organic Vapor Phase Epitaxy

In this study, nitrogen‐polar (N‐polar) GaN/Al0.9Ga0.1N/aluminum nitride (AlN) structures are grown on a sapphire substrate with an offcut angle of 2.0° from the m axis using metal‐organic vapor phase epitaxy. Low‐growth temperatures of N‐polar GaN result in a shorter Ga‐migration length, and 2D GaN growth is successfully achieved. The growth temperature and V/III ratio dependence are investigated for N‐polar GaN. As a result, high‐quality and flat N‐polar GaN is successfully grown at a low temperature of 650 °C at a high V/III ratio and nonequilibrium conditions. Through X‐ray reciprocal space mapping, N‐polar GaN can be grown coherently on a N‐polar AlN template at low temperatures around 650 °C, relaxing at higher temperatures.

Relevance of Platinum Underlayer Crystal Quality for the Microstructure and Magnetic Properties of the Heterostructures YbFeO3/Pt/YSZ(111).

The hexagonal ferrite h-YbFeO3 grown on YSZ(111) by pulsed laser deposition is foreseen as a promising single multiferroic candidate where ferroelectricity and antiferromagnetism coexist for future applications at low temperatures. We studied in detail the microstructure as well as the temperature dependence of the magnetic properties of the devices by comparing the heterostructures grown directly on YSZ(111) (i.e., YbPt_Th0nm) with h-YbFeO3 films deposited on substrates buffered with platinum Pt/YSZ(111) and in dependence on the Pt underlayer film thickness (i.e., YbPt_Th10nm, YbPt_Th40nm, YbPt_Th55nm, and YbPt_Th70nm). The goal was to deeply understand the importance of the crystal quality and morphology of the Pt underlayer for the h-YbFeO3 layer crystal quality, surface morphology, and the resulting physical properties. We demonstrate the relevance of homogeneity, continuity, and hillock formation of the Pt layer for the h-YbFeO3 microstructure in terms of crystal structure, mosaicity, grain boundaries, and defect distribution. The findings of transmission electron microscopy and X-ray diffraction reciprocal space mapping characterization enable us to conclude that an optimum film thickness for the Pt bottom electrode is ThPt = 70 nm, which improves the crystal quality of h-YbFeO3 films grown on Pt-buffered YSZ(111) in comparison with h-YbFeO3 films grown on YSZ(111) (i.e., YbPt_Th0nm). The latter shows a disturbance in the crystal structure, in the up-and-down atomic arrangement of the ferroelectric domains, as well as in the Yb-Fe exchange interactions. Therefore, an enhancement in the remanent and in the total magnetization was obtained at low temperatures below 50 K for h-YbFeO3 films deposited on Pt-buffered substrates Pt/YSZ(111) when the Pt underlayer reached ThPt = 70 nm.

Compositional dependence of direct transition energies in SixGe1−x−ySny alloys lattice-matched to Ge/GaAs

SixGe1−x−ySny ternary alloys are a candidate material system for use in solar cells and other optoelectronic devices. We report on the direct transition energies and structural properties of Ge-rich SixGe1−x−ySny alloys with six different compositions (up to 10% Si and 3% Sn), lattice-matched to Ge or GaAs substrates. The direct interband transitions occurring at energies between 0.9 and 5.0 eV were investigated using spectroscopic ellipsometry, and the resulting data were used to obtain the dielectric functions of the SixGe1−x−ySny layer by fitting a multilayer model. Values for the E0, E1, Δ1, E0′, and E2 transition energies were then found by identifying critical points in the dielectric functions. Structurally, the composition of the samples was measured using energy-dispersive x-ray measurements. The lattice constants predicted from these compositions are in good agreement with reciprocal space maps obtained through x-ray diffraction. The results confirm that a 1 eV absorption edge due to direct interband transitions can be achieved using relatively low Si and Sn fractions (<10% and <3%, respectively), although the bandgap remains indirect and at lower energies. The higher-energy critical points show smaller shifts relative to Ge and match results previously observed or predicted in the literature.

Analysis of local strain fields around individual threading dislocations in GaN substrates by nanobeam x-ray diffraction

Position-dependent three-dimensional reciprocal space mapping (RSM) by nanobeam x-ray diffraction (nanoXRD) was performed to reveal the strain fields produced around individual threading dislocations (TDs) in GaN substrates. The distribution and Burgers vector of TDs for the nanoXRD measurements were confirmed by prerequisite analysis of multi-photon excited photoluminescence and etch pit methods. The present results demonstrated that the nanoXRD can identify change in the lattice plane structure for all types of TDs, i.e., edge-, screw-, and mixed TDs with the Burgers vector of b = 1a, 1c and 1m + 1c. Strain tensor components related to edge and/or screw components of the TDs analyzed from the three-dimensional RSM data showed a nearly symmetrical strained region centered on the TD positions, which were in good agreements with simulation results based on the isotropic elastic theory using a particular Burgers vector. The present method is beneficial in that it allows non-destructive analysis of screw components of TDs that tend to contribute to leakage characteristics and are not routinely accessible by conventional structural analysis. These results indicate that nanoXRD could be a powerful way to reveal three-dimensional strain fields associated with arbitrary types of TDs in semiconductor materials, such as GaN and SiC.

Lattice match between coexisting cubic and tetragonal phases in PMN-PT at the phase transition

(1−x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-PT) perovskite-like solid solutions are recognized for their outstanding electromechanical properties, which are of technological importance. However, some significant aspects of the crystal structures and domain assemblages in this system and the role of these characteristics in defining the functional performance of PMN-PT remain uncertain. Here, we used synchrotron x-ray diffraction to investigate the phase transition linking the paraelectric (cubic) and ferroelectric (tetragonal) phases in a single crystal of 0.65PMN-0.35PT. We analyzed the evolution of reciprocal-space maps across this transition. These maps were collected using small temperature step (1 K) and a high reciprocal-space resolution to reveal changes in the splitting of Bragg peaks caused by the formation of ferroelastic domains in the low-symmetry phase. Our results uncovered a two-phase state, cubic plus tetragonal phases, which exists over a narrow temperature range of only ≈4 K and exhibits a thermal hysteresis of ≈1.8 K. Remarkably, within this state, the lattice parameter of the cubic phase, aC, matches the orientational average of the lattice parameters for the tetragonal polymorph, 23aT+13cT. We discuss the implications of this matching, highlighting the possibility of it being realized by the formation of an assemblage of tetragonal twin domains separated from the cubic phase by a strain-free {110} boundary, as in the “adaptive phase” but without domain miniaturization.

Influence of GaN substrate miscut on the XRD quantification of plastic relaxation in InGaN

In the epitaxy of semiconducting materials, substrate miscut is introduced to improve the morphology of deposited layers. However, in the mismatched epitaxial system, the substrate miscut also changes the stress geometry in the deposited layer, thus influencing the relaxation processes. In this paper, we show that InGaN layers grown on misoriented (0001)-GaN substrates relax by preferential activation of certain glide planes for misfit dislocation formation. Substrate misorientation changes resolved shear stresses, affecting the distribution of misfit dislocations within each dislocation set. We demonstrate that this mechanism leads to an anisotropic strain as well as a tilt of the InGaN layer with respect to the GaN substrate. It appears that these phenomena are more pronounced in structures grown on substrates misoriented toward 〈112¯0〉 direction than corresponding structures with 〈1¯100〉 misorientation. We reveal that the lattice of partially relaxed InGaN has a triclinic deformation, thus requiring advanced XRD analysis. The presentation of just a single asymmetric reciprocal space map commonly practiced in the literature can lead to misleading information regarding the relaxation state of partially relaxed wurtzite structures.