Range Of Hole Concentration Research Articles

Physical mechanism of Zn and Te doping process of In0.145Ga0.855As0.108Sb0.892 quaternary alloys

We investigated p- and n-type In0.145Ga0.855As0.108Sb0.892 semiconductor alloys grown on GaSb (100) substrates by the liquid phase epitaxy (LPE) technique with different Zinc (Zn) and Tellerium (Te) mole fractions, respectively. Photoluminescence (PL) spectra showed a band gap narrowing effect for p-type doping and a band gap widening for n-type doping, attributed to the type of carrier concentration. The carrier concentration was determined from the band-to-band transition of the PL spectra in the range of 1.20 × 1016 to 2.80 × 1017 and 7.75 × 1016 to 1.02 × 1018 cm−3 for electrons and holes, respectively. Raman spectroscopy measurements showed the phonon modes LO (GaSb–InAs)-like and TO (GaSb–InAs)-like for both types of doping. The frequency dispersion of these modes is closely tied to the presence of native defects, such as vacancies of Ga(VGa), antisites of Ga in Sb (GaSb), and VGa–GaSb complexes. Incorporation of Zn- and Te-doping into the lattice led to a notable reduction in the full width at half maximum (FWHM) of the LO (GaSb–InAs)-like mode, as these dopants effectively diminished native defects. A detailed model is presented for the incorporation of dopants and their effect on the crystal quality. Phonon–plasmon coupling was observed through the L− mode, which overlaps with the TO (GaSb–InAs)-like mode for the carrier concentrations observed in the doped alloys. A theoretical estimation of the frequencies of the coupled modes L+ and L− was implemented as a function of the carrier concentration, based on the effective dielectric function of the quaternary compound. The L+ coupled mode shifts from the phononic to the plasmonic domain for theoretical electron concentrations ranging from ∼1017 to 5 × 1018 cm−3, while in p-type conductivity, the L+ mode remains in the phononic domain for the same range of hole concentrations. The increase in the frequency of the L+ mode with carrier concentration, such as the plasma frequency, provides another reliable method for determining carrier concentrations. This study reveals the physical mechanism of Zn an Te incorporation into InGaAsSb, which is required for the integration of p- and n-type doped quaternary alloys into optoelectronic applications. In addition, it provides a comprehensive understanding of the complex interaction mechanisms, including LO phonon–plasmon coupling modes and optical transitions, opening up new lines for exploring the electrical and structural properties of these materials.

Discovery of a Robust P‐Type Ultrawide Bandgap Oxide Semiconductor: LiGa5O8

AbstractLiGa5O8, an ultrawide bandgap semiconductor, is discovered to exhibit p‐type conductivity at room temperature, making it the widest bandgap p‐type oxide semiconductor known to date. Utilizing a mist–chemical vapor deposition (M–CVD) technique, successful growth of p‐type LiGa5O8 thin films on c‐plane sapphire and GaN‐on‐sapphire substrates is achieved. Characterization through X‐ray diffraction and cross‐sectional scanning transmission electron microscopy (STEM) confirms the spinel cubic crystal structure of LiGa5O8. Comprehensive investigations into the effects of growth conditions on surface morphology, material composition, and p‐type charge carrier transport are conducted. As‐grown LiGa5O8 thin films exhibit a broad range of hole concentrations, ranging from 1015 cm−3 to 1018 cm−3, depending on growth conditions. Elemental compositions of Li, Ga, and O are extracted using X‐ray photoemission spectroscopy (XPS). Both Li‐poor and Li‐rich LiGa5O8 films demonstrate p‐type conductivity. Optical absorption measurements reveal the bandgap of LiGa5O8 films to be ≈5.36 eV. Additionally, temperature‐dependent Hall measurements of the p‐type LiGa5O8 thin films show robust p‐conductivity down to 150 K. Results from this study promise the advancement of future power electronics based on ultrawide bandgap Ga2O3 and related semiconductor material systems.

Statistics of the cuprate pairon states on a square lattice

In this paper the fundamental parameters of high-Tc superconductivity are shown to be connected to the statistics of pairons (hole pairs in their antiferromagnetic (AF) environment) on a square lattice. In particular, we study the density fluctuations and the distribution of the area surrounding each pairon on the scale of the AF correlation length , for the complete range of hole concentration. We show that the key parameters of the phase diagram, the Tc dome, and the pseudogap (PG) temperature , emerge from the statistical properties of the pairon disordered state. In this approach, the superconducting and the PG states appear as inseparable phenomena. The condensation energy, which fixes the critical temperature, is directly proportional to the correlation energy between pairons and not to the energy gap, contrary to conventional superconductors. When the correlation energy between pairons is suppressed by fluctuations, either thermally, by disorder, or in the vortex core, the PG state of disordered pairons is obtained. We attribute the unique features of cuprate superconductivity to this order–disorder transition in real space, which clearly differs from the Bardeen–Cooper–Schrieffer mechanism. Our predictions are in quantitative agreement with low-temperature tunneling and photoemission spectroscopy experiments.

Coexistence of ferroelectricity and ferromagnetism in hex-GeS nanowires.

The existence of one-dimensional (1D) ferroelectricity and ferromagnetism provides an opportunity to expand the field of research in low-dimensional magnetoelectric and multiferroics and explore the future development of high-performance nanometer devices. Here, we predict a novel 1D ferroelectric hex-GeS nanowire with coexisting ferromagnetism. The electric polarization comes from the atomic displacements between Ge and S atoms, and it exhibits a far-higher than room temperature ferroelectric Curie temperature TEc = 830 K. The ferromagnetism, stemming from the Stoner instability, can be tuned by hole doping and maintained over a wide range of hole concentrations. Additionally, an indirect-direct-indirect band gap transition can be achieved via strain engineering and the bonding nature of the near-band-edge electronic orbitals revealed this transition mechanism. These results offer a platform to investigate 1D ferroelectric and ferromagnetic systems, and the presented hex-GeS nanowire demonstrates the potential for high-performance electronic and spintronic applications.

Doping and disorder dependent isotope exponent in hole doped cuprates

The nature of the variation of oxygen isotope exponent (IE) with the number of doped holes, p, in the CuO2 planes has been a source of considerable debate. The large IE over certain range of hole concentrations always casts a shadow over any proposal where non-phononic mechanism is invoked to describe pairing in cuprates. On the other hand, existing theoretical schemes, based on electron-phonon interactions, cannot describe the anomalous features shown by the IE as a function of hole concentration/disorder, either quantitatively or qualitatively. Based on an experiment relating the possibility of Fermi-surface reconstruction to the thermoelectric transport measurements (Laliberté et al. Nature Commun. 2, 432 (2011)), we propose here a simple scenario where isotope substitutions affect the charge/spin stripe state via the coupling to the underlying lattice and thereby change the superconducting Tc . In this picture, significant part of the IE, over an extended p-range, actually originates from the isotope induced stripe modulation and is not directly related to the characteristic energy scale of the phonons mediating the Cooper pairing. This proposal qualitatively explains all the disorder- and p-dependent features of the IE seen in hole doped high-Tc cuprates. We also provide with an outline of some experiments that can verify the degree of validity of the proposed scheme.

Estimation of Cooper pair density and its relation to the critical current density in Y(Ca)BCO high-Tc cuprate superconductors

Hole concentration (p) in the CuO2 plane largely controls all the electronic properties in the normal and superconducting states of high-Tc cuprates. The critical current density, Jc, is no exception. Previous hole content dependent studies have demonstrated the role of intrinsic depairing current density in determining the observed critical current density in copper oxide superconductors. The intrinsic pinning energy depends directly on the superconducting condensation energy which determines the magnitude of the depairing critical current density. Superconducting condensation energy is proportional to the Cooper pair density (superpair density) and depends strongly on the hole concentration within the CuO2 plane. We have calculated the Cooper pair density, ρs, of YBCO (Y123), a typical hole doped cuprate, as a function of p, in this study. A triangular pseudogap, pinned at the Fermi level, in the quasiparticle spectral density has been considered. The low-temperature zero-field critical current density of a number of high quality Y(Ca)BCO thin films over wide range of compositions and hole concentrations have been explored. The normalized values of the superpair density and the experimental critical current density exhibit a clear correspondence as the in-plane hole content is varied. This systematic behavior provides us with strong evidence that the critical current density of hole doped cuprates is primarily dependent on the superpair density, which in turn depends on the magnitude of the pseudogap energy. The agreement between the estimated p-dependent superpair density and the previously experimentally determined superfluid density of Y(Ca)BCO is quite good.

Experimental revelation of multiband transport in heavily doped BaCd2Sb2 with promising thermoelectric performance

Zintl compounds have long been considered as potential thermoelectrics because of the compositional richness that enables a large-scale manipulation on both charge and phonon transport properties. The CaAl2Si2-structured ternary Zintl family with a chemical formula of AB2C2 is particularly interesting for thermoelectric applications in p-type because of its intrinsic low lattice thermal conductivity and its tunable valence band structures. Years of development has led to a realization of thermoelectric figure of merit (zT) of unity or higher in p-type conduction. This work focuses on thermoelectric BaCd2Sb2, a member from this Zintl family that has been rarely investigated. It is revealed that this material shows a sufficiently large band gap of Eg∼0.7eV and an intrinsically low lattice thermal conductivity of 0.6 W/m-K at ∼700 K. Interestingly, a successful doping for increasing the hole concentration by about two orders of magnitude (from ∼6 × 1017 to ∼6 × 1019 cm−3) enables an experimental revelation of charge transport by multiple bands with hole concentrations above 3 × 1019 cm−3. Such a multiband transport and a broad range of hole concentration ensure a superior electronic performance to be achieved, largely contributing to the realization of a zT approaching unity. This work demonstrates BaCd2Sb2 as a novel promising Zintl thermoelectric material.

Electron-phonon properties, structural stability, and superconductivity of doped antimonene

Antimonene is a recently discovered two-dimensional semiconductor with exceptional environmental stability, high carrier mobility, and strong spin-orbit interactions. In combination with electric field, the latter provides an additional degree of control over the materials' properties because of induced spin splitting. Here, we report on a computational study of electron-phonon coupling and superconductivity in $n$- and $p$-doped antimonene, where we pay a special attention on the effect of the perpendicular electric field. The range of accessible hole concentrations is significantly limited by the dynamical instability, associated with strong Fermi-surface nesting. At the same time, we find that in case of electron-doping antimonene remains stable and can be turned into a state with strong electron-phonon coupling, with the mass enhancement factor $\lambda$ of up to 2.3 at realistic charge carrier concentrations. In this regime, antimonene is expected to be a superconductor with the critical temperature of $\sim$16 K. Application of bias voltage leads to a considerable modification of the electronic structure, affecting the electron-phonon coupling in antimonene. While these effects are less obvious in case of electron-doping, field-effect in hole-doped antimonene results in a considerable variation of the critical temperature depending on bias voltage.

Cubic anisotropy in (Ga,Mn)As layers: Experiment and theory

Historically, comprehensive studies of dilute ferromagnetic semiconductors, e.g., $p$-type (Cd,Mn)Te and (Ga,Mn)As, paved the way for a quantitative theoretical description of effects associated with spin-orbit interactions in solids, such as crystalline magnetic anisotropy. In particular, the theory was successful in explaining {\em uniaxial} magnetic anisotropies associated with biaxial strain and non-random formation of magnetic dimers in epitaxial (Ga,Mn)As layers. However, the situation appears much less settled in the case of the {\em cubic} term: the theory predicts switchings of the easy axis between in-plane $\langle 100\rangle$ and $\langle 110\rangle$ directions as a function of the hole concentration, whereas only the $\langle 100\rangle$ orientation has been found experimentally. Here, we report on the observation of such switchings by magnetization and ferromagnetic resonance studies on a series of high-crystalline quality (Ga,Mn)As films. We describe our findings by the mean-field $p$-$d$ Zener model augmented with three new ingredients. The first one is a scattering broadening of the hole density of states, which reduces significantly the amplitude of the alternating carrier-induced contribution. This opens the way for the two other ingredients, namely the so-far disregarded single-ion magnetic anisotropy and disorder-driven non-uniformities of the carrier density, both favoring the $\langle 100\rangle$ direction of the apparent easy axis. However, according to our results, when the disorder gets reduced a switching to the $\langle 110\rangle$ orientation is possible in a certain temperature and hole concentration range.

Injected carrier concentration dependence of the expansion of single Shockley-type stacking faults in 4H-SiC PiN diodes

We investigated the relationship between the dislocation velocity and the injected carrier concentration on the expansion of single Shockley-type stacking faults by monitoring the electroluminescence from 4H-SiC PiN diodes with various anode Al concentrations. The injected carrier concentration was calculated using a device simulation that took into account the measured accumulated charge in the drift layer during diode turn-off. The dislocation velocity was strongly dependent on the injected hole concentration, which represents the excess carrier concentration. The activation energy of the dislocation velocity was quite small (below 0.001 eV between 310 and 386 K) over a fixed range of hole concentrations. The average threshold hole concentration required for the expansion of bar-shaped single Shockley-type stacking faults at the interface between the buffer layer and the substrate was determined to be 1.6–2.5 × 1016 cm−3 for diodes with a p-type epitaxial anode with various Al concentrations.

Effects of hole doping and strain on magnetism in buckled phosphorene and arsenene

Phosphorene and arsenene are newly discovered two-dimensional semiconductors with many exciting physical properties. Here, using first-principles density functional theory, we investigate the effects of hole doping and strain on the magnetism in phosphorene and arsenene with buckled structures. We show that ferromagnetic ground states originating from Stoner instability can emerge in a broad range of hole concentrations. In addition, strain effectively modulates the magnetism by means of changing the band orders of the top of the valence bands. Magnetoresponses under hole doping and strain in buckled phosphorene and arsenene are distinct due to the contrary band orders at their native states. Furthermore, magnetoelastic coupling effect and magnetostriction in buckled phosphorene and arsenene are discussed. Our results suggest the great potential of buckled phosphorene and arsenene in magnetic device applications.

Tunable magneto-optical effects in hole-doped group-IIIA metal-monochalcogenide monolayers

Because of unusual properties and fascinating prospects for next-generation device applications, two-dimensional (2D) materials have attracted enormous attention since graphene was discovered in 2004. Among the 2D materials beyond graphene, group-IIIA metal-monochalcogenide (MX) monolayers (MLs), are receiving increasing interests because their excellent applications on electronics and optoelectronics. Recently, ferromagnetism and half-metallicity have been predicted in hole-doped GaS and GaSe MLs, which promise exciting potentials for semiconductor spintronics. Detection and measurement of spontaneous magnetization in these 2D materials will be essential for their spintronic applications. The magneto-optical (MO) effects not only are a powerful probe of magnetism in 2D materials but also have valuable applications in high-density data-storage technology. Furthermore, anomalous Hall effect is not only an ideal transport probe of itinerant magnetism but also of considerable current interest because of its topological nature. Here we perform a systematic first-principles density functional study on the MO Kerr and Faraday effects as well as such important magnetic and transport properties as magneto-crystalline anisotropy energy (MAE) and anomalous Hall conductivity (AHC) of all hole-doped MX (M = Ga, In; X = S, Se, Te) MLs. In this paper, we report the following important findings: (a) gate-tunable MO effects in MX MLs in a broad range of hole concentration; (b) large Kerr and Faraday rotation angles with Kerr angles comparable to well-known MO 3d-transition-metal multilayers and Faraday angles being among the largest ones reported; (c) tunable MAE and large AHC, making MX MLs suitable for magnetic memory devices current-driven via spin-transfer torque and also promising materials for magnetic field nanosensors with high sensitivity. Superior MO characteristics, together with the other interesting properties, would make MX MLs an excellent family of 2D materials for semiconductor MO and spintronic nanodevices.

Possible ferromagnetic phase in non-superconducting heavily overdoped cuprates of Bi-2201

In order to investigate the possible ferromagnetic phase in the non-superconducting (non-SC) heavily overdoped (HOD) regime of high-Tc cuprates suggested by Sonier et al. [Proc. Natl. Acad. Sci. USA 107, 17131 (2010)] in La2-xSrxCuO4, both the magnetization and in-plane electrical resistivity, ρab, have been measured using single crystals of Bi1.76Pb0.35Sr1.89CuO6+δ covering a wide range of hole concentration. Magnetization curves in the non-SC HOD regime have shown a tendency to be saturated in high magnetic fields at low temperatures, which is probably a precursor of the possible ferromagnetic transition at a lower temperature. In addition, it has been found that ρab exhibits the temperature dependence being proportional to T4.3, which is characteristic of a metal with two-dimensional ferromagnetic fluctuations, in a wide range of hole concentration from the superconducting overdoped to the non-SC HOD regime. It has been concluded that two-dimensional ferromagnetic correlation develops at low temperatures in HOD Bi-2201 and that therefore the development of the ferromagnetic correlation is probably an intrinsic feature in the HOD cuprates.

Electronic properties of p-GaN(Mg) irradiated with reactor neutrons

The effect of irradiation with full-spectrum reactor neutrons and predominantly fast reactor neutrons (up to a fluence of 8 × 1018 cm−2) on the electrical properties of epitaxial p-GaN(Mg) films at different initial doping levels (in the range of hole concentrations p = 1017–1019 cm−3) is analyzed. It is found that neutron irradiation induces an increase in the resistivity of the initial material to 1010 Ω cm at 300 K. It is shown that, at high neutron fluences, the resistivity of the material decreases because of the hopping conduction of charge carriers over radiation defect states. The study of isochronous annealing at 100–1000°C reveals stages of donor-defect (100–300°C, 500–700°C, 750–850°C) and acceptor-defect (300–500°C, 650–800°C) annealing in the neutron-irradiated p-GaN(Mg) samples.

Strongly correlated electron system in the magnetic field

The energy spectrum of the two-dimensional t-J model in a perpendicular magnetic field is investigated. The density of states at the Fermi level as a function of the inverse magnetic field $\frac{1}{B}$ reveals oscillations in the range of hole concentrations $0.08<x<0.18$. In the used approximation zero-field Fermi surfaces are large for these $x$, and oscillation frequencies conform with such Fermi surfaces. However, the amplitude of these oscillations is modulated with a frequency which is smaller by an order of magnitude. The appearance of this modulation is related to van Hove singularities in the Landau subbands, which traverse the Fermi level with changing $B$. The singularities are connected with bending the Landau subbands due to strong electron correlations. The frequency of the modulation is of the same order of magnitude as the quantum oscillation frequency observed in underdoped cuprates.

Enhanced hole concentration through Ga doping and excess of Mg and thermoelectric properties of p-type Mg2(1+z)(Si0.3Sn0.7)1−yGay

The influence of the doping amount of Ga as well as the excess of Mg on the phase composition and thermoelectric properties of Mg2(1+z)(Si0.3Sn0.7)1−yGay compounds are analyzed in detail. Regarding the content of Mg, a second phase of Mg is detected at grain boundaries whenever its over-stoichiometry exceeds 7%. On the other hand, XRD and EPMA analysis indicate that phase separation occurs when Mg is more than 3.5% deficient with respect to its stoichiometric amount. Thermoelectric property measurements reveal that doping with Ga, along with some over-stoichiometry of Mg, enhances the concentration of holes and electrical conductivity of Mg2(1+z)(Si0.3Sn0.7)1−yGay while it simultaneously reduces the Seebeck coefficient. However, there is little effect on the lattice thermal conductivity. The results also show that, in p-type Mg2Si0.3Sn0.7 based compounds, antisite point defects MgSi form when the content of Mg is over-stoichiometric. This leads to an enhanced concentration of holes. Mg2.10(Si0.3Sn0.7)0.95Ga0.05, having the optimized content of Ga and Mg, possesses the highest ZT value of 0.35 that is achieved at 650 K. This research reveals that both the doping of Ga and the excess of Mg do not have significant influence on the band structure of Mg2Si0.3Sn0.7, and the transport properties of p-type Mg2Si0.3Sn0.7 in the high hole concentration range can be well described by a simple, parabolic band model. The research work also establishes an important basis for further optimization of the figure of merit of p-type Mg2Si1−xSnx solid solutions by making use of over-stoichiometric amounts of Mg.

Distinct Fe-induced magnetic states in the underdoped and overdoped regimes of La2−xSrxCu1−yFeyO4revealed by muon spin relaxation

Zero-field and longitudinal-field muon-spin-relaxation measurements have been performed in partially Fe-substituted La2-xSrxCu1-yFeyO4 in a wide range of hole concentration, to investigate the magnetic state induced by the Fe substitution recently suggested from the neutron-scattering measurements [Phys. Rev. Lett. 107, 127002 (2011)]. It has been found that the magnetic transition temperature is notably enhanced through the 1% Fe substitution in a wide range of hole concentration where superconductivity appears in Fe-free La2-xSrxCuO4. In the underdoped regime, the Fe-induced magnetic order can be understood in terms of the concept of stripe pinning by Fe as in the case of the Zn-induced one in La2-xSrxCu1-yZnyO4. In the overdoped regime, on the other hand, the Fe-induced magnetic order is short-ranged, which is distinct from the stripes. It is plausible that a spin-glass state of Fe spins derived from the Ruderman-Kittel-Kasuya-Yosida interaction is realized in the overdoped regime, suggesting a change of the ground state from the strongly correlated state to the Fermi-liquid state with hole doping in La-214 high-Tc cuprates.

Neutron scattering studies of stripe correlations in curate oxide superconductors

In the last quarter of a century, neutron-scattering measurements have provided important clues for understanding the novel magnetism of carrier doped cuprate oxides. Discovery of evidence for charge-density-wave (CDW) and spin-density-wave (SDW) orders in La1.6−xNd0.4SrxCuO4 with x∼1/8 has attracted much attention on the universality of inhomogeneous carrier distribution in CuO2 planes, namely stripe correlations, and its relevance to the superconductivity. Here we review the nature of charge and spin stripe orders in a prototypical superconducting La-214 system, which has been investigated mainly by neutron scattering measurements. After introducing the hole concentration range, where the each order can be observed, characteristic features of low-energy spin fluctuations in the stripe ordered and disordered La2−xBaxCuO4 with x∼1/8 will be discussed in terms of fluctuating stripes. The impact of magnetic field and impurity substitution on the orders is also presented, followed by a comparative study on electron-doped cuprates. Finally, we will give a brief summary of experimental trends.

Impurity and magnetic field effects on the stripes in cuprates

Impurity and magnetic field effects on the stripes are reviewed not only in the La-based cuprates but also in the other high-Tc cuprates. It has turned out that the so-called 1/8 anomaly takes place not only in the La-based cuprates but also in the hole-doped high-Tc cuprates universally, when adequate pinning centers are introduced. Impurity-induced magnetism tends to emerge at low temperatures in a wide range of hole concentration in LSCO, Bi2201 and YBCO where superconductivity appears. Accordingly, it is possible that the dynamically fluctuating stripes exist universally in the hole-doped high-Tc cuprates and play an important role in the appearance of the high-Tc superconductivity. For the hole-doped high-Tc cuprates, it has turned out that magnetic field effects on the stripes are small in samples where the stripes are well stabilized statically in zero field, while field-induced magnetism is observed under magnetic fields parallel to the c-axis in underdoped samples where magnetism is not well developed in zero field. The field-induced magnetism has been observed in some optimally doped samples also, but it has never been observed in overdoped samples. Field-induced CDW has been observed in slightly overdoped BSCCO. These results are understood fundamentally in terms of the theoretical phase diagram as a function of magnetic field, based on the Ginzburg–Landau theory with competing antiferromagnetic and superconducting order parameters. It is also possible to understand that the field-induced magnetism and CDW are due to pinning of the dynamically fluctuating stripes by vortex cores as in the case of the pinning by impurities. In the electron-doped high-Tc cuprates, on the other hand, impurity-induced magnetism has never been observed. The nature of the field-induced magnetism observed in the electron-doped cuprates is different from that in the hole-doped ones.

Effects of Zn on superconductivity, stripe order, and pseudogap correlations in YBa2(Cu1−yZny)3O7−δ

The effect of Zn substitution in the CuO2 plane on the superconducting transition temperature, Tc, was studied for the YBa2(Cu1−yZny)3O7−δ compounds over a wide range of hole concentration, p, and Zn content (y). Zn induced rate of suppression of Tc, dTc(p)/dy, was found to be strongly p-dependent and showed a monotonic variation with p, except in the region of the 60K plateau where the charge/spin stripe correlations are believed to be at their strongest in Y123. The magnitude of dTc(p)/dy decreased significantly around this composition, implying that Zn suddenly became less effective in degrading Tc. This is somewhat counterintuitive since static stripe ordering itself degrades superconducting order. We have discussed the possible scenarios that can give rise to such an anomalous dTc(p)/dy at the Tc(δ) plateau. We have also looked at the p-dependent characteristic pseudogap energy scale, εg(p), which shows a quasi-linear decrease with increasing p without any noticeable feature in the plateau region. Moreover, there is no appreciable effect of Zn content on the value of εg(p). All these observations are indicative of a complex and possibly competing interplay among the superconducting, pseudogap, and stripe correlations in YBa2(Cu1−yZny)3O7−δ compounds.