Range Of Applications In Nanoelectronics Research Articles

Domains with Varying Conductance in Tensile Strained SrMnO3 Thin Films Using Out‐of‐Plane Electric Fields

AbstractDomains and domain wall engineering have been extensively explored in ferroic materials for a wide range of applications in nanoelectronics and spintronics. Complex oxides exhibiting strongly correlated properties are model platforms for such studies where response to strain or external stimuli such as electric field, temperature and light can be probed. Here, domains in strained SrMnO3 films, grown on a degenerate semiconductor, allowing for conduction in an out‐of‐plane geometry, are studied using a combination of microscopy probes. Using conductive atomic force microscopy, electrically isolated domains with varying conductance are found and their temporal evolution is investigated. Further, their formation and microstructure are studied using scanning transmission electron microscopy and secondary electron contrast in scanning electron microscopy. An important contribution is establishing that the observed domains are formed by cracks, driven by inhomogeneous strain relaxation throughout the film, resulting in significantly high strain planes. The potential of secondary electrons to detect domain dependent contrast over a large area, ensuing due to the use of a degenerate semiconductor correlates with the conductive properties of the domains and serves as a new direction to probe domains and domain walls in ferroic materials.

Engineering the electronic, magnetic, and optical properties of GaP monolayer by substitutional doping: a first-principles study

In this paper we present a thorough first-principles density functional theory based computational study of the structural stability, electronic, magnetic, and optical properties of pristine and doped gallium phosphide (GaP) monolayers. The pristine GaP monolayer is found to have a periodically buckled structure, with an indirect band gap of 2.15 eV. The doping by X (B, Al, In, C, Si, Ge, Sn, Zn, and Cd) at the Ga site, and Y (N, As, Sb, O, S, Se, Te, Zn, and Cd) at the P site is considered, and an indirect to direct band gap transition is observed after doping by In at the Ga site. For several cases, significant changes in the band gap are seen after doping, while the system becomes metallic when O is substituted at the P site. The spin-polarized band structures are calculated for the monolayers with doping-induced magnetism, and we find that for some cases a direct band gap appears for one of the spin orientations. For such cases, we investigate the intriguing possibility of spin-dependent optical properties. Furthermore, for several cases the band gap is very small for one of the spin orientations, suggesting the possibility of engineering half metallicity by doping. For the layers with direct band gaps, the calculated optical absorption spectra are found to span a wide energy range in the visible and ultraviolet regions. The computed formation energies of both the pristine and doped structures are quite small, indicating that the laboratory realization of such structures is quite feasible. On the whole, our results suggest that the doped GaP monolayer is a material with potentially a wide range of applications in nanoelectronics, spintronics, optoelectronics, solar cells, etc.

Encapsulating Ne inside C20H20. A molecular dynamics study on the stability of the endohedral system

The central collision between a neon atom and a dodecahedrane cage has been investigated within the framework of ab initio Hartree-Fock molecular dynamics simulations for various initial velocities of the incident atom. Four scenarios regarding the interaction’s outcome have been identified. A reaction channel involving the encapsulation of the projectile inside the molecular cage has been studied for a simulation time of 4.8 ps. The analysis is focused on: the rate of energy exchange between Ne and C20H20, the mechanical oscillation frequencies of the atom and the cage, and also, on the frequency with which the dipole moment changes. The results suggest that inside the molecular cage, neon is a stable atomic vibrator, which oscillates with the highest peak frequency of 16 THz. Furthermore, the same frequency characterizes the dipole moment oscillation, suggesting a strong coupling between the atom and the cage, making the endohedral system suitable for a wide range of applications in nano-electronics.

Effect of oxidation on mechanical properties of copper nanowire: A ReaxFF (reactive force field) molecular dynamics study

Nanostructures with high surface area to volume ratio, such as oxidized and coated Cu nanowires (NWs), exhibit unique mechanical properties due to their size and surface effects. Understanding the complex oxidation process of Cu NWs at nanoscale and quantifying its resulting effects on mechanical behavior and properties are significantly essential for effective usage of Cu NW devices in a wide range of applications in nanoelectronics. Here, we perform molecular dynamics simulations using ReaxFF (reactive force field) to investigate the oxidation process and mechanisms of [001]-oriented cylindrical Cu NWs and its contribution on the mechanical deformation behavior and material properties as a function of NW sizes. The relatively thin oxide CuxOy layer is formed on the surface of Cu NWs in an O2 environment, creating a core/shell (Cu/CuxOy) NW structure that played a key role in governing the overall tensile mechanical deformation behavior and properties of Cu NW. The formation of oxide layer effects, including the resulting interface and defects, leads to a reduction in the initial dislocation nucleation barrier, which facilitates the onset of plasticity and stress relaxation, ultimately resulting in a negative impact on the tensile strength, Young's modulus, yield stress and strain, and flow stress when compared to pristine counterparts. It is worth noting that the tensile mechanical response and properties of the Cu NWs are highly dependent on the pre-existing oxide shell layer associated with the size of NW, determining the overall mechanical performance and properties of Cu NWs.

Infinitene: Computational Insights from Nonadiabatic Excited State Dynamics.

Progress in organic synthesis opens exploration of a rich diversity of molecules with interesting new structural topologies. This is the case of a recently synthesized helically twisted figure-eight molecule coined infinitene. The molecule belongs to a numerous family of looped polyarenes, where the degree of π-conjugation is controlled by high strain energies and steric hindrances. A particular balance of these ingredients leads to unusual optoelectronic properties potentially suitable for a range of applications in nanoelectronics and photonics. Due to its recent discovery, the photophysical properties of infinitene remain unexplored. In this Letter, atomistic nonadiabatic excited state molecular dynamics modeling unveils unique features of intramolecular electronic and vibrational energy relaxation and redistribution that take place after molecular photoexcitation. Our results detail relationships between optical and electronic properties providing useful knowledge for future molecular designs related to infinitene.

Self-Limiting Opto-Electrochemical Thinning of Transition-Metal Dichalcogenides.

Two-dimensional monolayer and few-layer transition-metal dichalcogenides (TMDs) are promising for advanced electronic and photonic applications due to their extraordinary optoelectronic and mechanical properties. However, it has remained challenging to produce high-quality TMD thin films with controlled thickness and desired micropatterns, which are essential for their practical implementation in functional devices. In this work, a self-limiting opto-electrochemical thinning (sOET) technique is developed for on-demand thinning and patterning of TMD flakes at high efficiency. Benefiting from optically enhanced electrochemical reactions, sOET features a low operational optical power density of down to 70 μW μm-2 to avoid photodamage and thermal damage to the thinned TMD flakes. Through selective optical excitation with different laser wavelengths based on the thickness-dependent band gaps of TMD materials, sOET enables precise control over the final thickness of TMD flakes. With the capability of thickness control and site-specific patterning, our sOET offers an effective route to fabricating high-quality TMD materials for a broad range of applications in nanoelectronics, nanomechanics, and nanophotonics.

Tunable Dielectric and Thermal Properties of Oxide Dielectrics via Substrate Biasing in Plasma-Enhanced Atomic Layer Deposition.

The ability to control the properties of dielectric thin films on demand is of fundamental interest in nanoscale devices. Here, we modulate plasma characteristics at the surface of a substrate to tune both dielectric constant and thermal conductivity of amorphous thin films grown using plasma-enhanced atomic layer deposition. Specifically, we apply a substrate bias ranging from 0 to ∼117 V and demonstrate the systematic tunability of various material parameters of Al2O3. As a function of the substrate bias, we find a nonmonotonical evolution of intrinsic properties, including density, dielectric constant, and thermal conductivity. A key observation is that the maximum values in dielectric constant and effective thermal conductivity emerge at different substrate biases. The impact of density on both thermal conductivity and dielectric constant is further examined using a differential effective medium theory and the Clausius-Mossotti model, respectively. We find that the peak value in the dielectric constant deviates from the Clausius-Mossotti model, indicating the change of oxygen fraction in our thin films as a function of substrate bias. This finding suggests that the increased local strength of plasma sheath not only enhances material density but also controls the dynamics of microstructural defect formation beyond what is possible with conventional approaches. Based on our experimental observations and modeling, we further build a phenomenological relation between dielectric constant and thermal conductivity. Our results pave invaluable avenues for optimizing dielectric thin films at the atomic scale for a wide range of applications in nanoelectronics and energy devices.

Electronic Energy Relaxation in a Photoexcited Fully Fused Edge-Sharing Carbon Nanobelt.

Carbon nanobelts are cylindrical molecules composed of fully fused edge-sharing arene rings. Because of their aesthetically appealing structures, they acquire unusual optoelectronic properties that are potentially suitable for a range of applications in nanoelectronics and photonics. Nevertheless, the very limited success of their synthesis has led to their photophysical properties remaining largely unknown. Compared to that of carbon nanorings (arenes linked by single bonds), the strong structural rigidity of nanobelts prevents significant deformations away from the original high-symmetry conformation and, therefore, impacts their photophysical properties. Herein, we study the photoinduced dynamics of a successfully synthesized belt segment of (6,6)CNT (carbon nanotube). Modeling this process with nonadiabatic excited state molecular dynamics simulations uncovers the critical role played by the changes in excited state wave function localization on the different types of carbon atoms. This allows a detailed description of the excited state dynamics and spatial exciton evolution throughout the nanobelt scaffold. Our results provide detailed information about the excited state electronic properties and internal conversion rates that is potentially useful for designing nanobelts for nanoelectronic and photonic applications.

Scalable Manufacturing of Single Nanowire Devices Using Crack-Defined Shadow Mask Lithography.

Single nanowires (NWs) have a broad range of applications in nanoelectronics, nanomechanics, and nanophotonics, but, to date, no technique can produce single sub-20 nm wide NWs with electrical connections in a scalable fashion. In this work, we combine conventional optical and crack lithographies to generate single NW devices with controllable and predictable dimensions and placement and with individual electrical contacts to the NWs. We demonstrate NWs made of gold, platinum, palladium, tungsten, tin, and metal oxides. We have used conventional i-line stepper lithography with a nominal resolution of 365 nm to define crack lithography structures in a shadow mask for large-scale manufacturing of sub-20 nm wide NWs, which is a 20-fold improvement over the resolution that is possible with the utilized stepper lithography. Overall, the proposed method represents an effective approach to generate single NW devices with useful applications in electrochemistry, photonics, and gas- and biosensing.

Spatially composition-modulated two-dimensional WS2xSe2(1-x) nanosheets.

Controllable synthesis of two-dimensional (2D) transition-metal dichalcogenides (TMDs) with tunable bandgaps is vital for their applications in nanophotonics, due to its efficient modulation of the physical and chemical properties of these atomic layered nanostructures. Here we report for the first time, the controllable synthesis of spatially composition-modulated WS2xSe2(1-x) nanosheets and WS2-WS2xSe2(1-x) lateral heterostructures by a developed one-step chemical vapor deposition (CVD) approach, as well as the understanding of their growth mechanism. During the growth, the composition was optically tuned along the plane of the atomic layered nanosheets through the precise control of evaporation sources. Microstructure characterization confirms the chemical identity of the composition modulated nanosheets, with S and Se contents gradually converting from the center to the edge. Local photoluminescence (PL) and Raman studies further demonstrate the position-dependent optical properties of the as-grown nanosheets, with the PL peak and Raman modes shifting in a wide range along the whole plane of the nanostructures, which are consistent with their tunable compositions and bandgaps. This demonstration of composition-modulated nanostructures provides a beneficial approach for the preparation of 2D semiconductor heterostructures and may open up a wide range of applications in nanoelectronics and optoelectronics.

Preparation of Multifunctional Carbon Nanotubes/Magnetite Nanocomposites

This paper describered a simple and versatile method to prepare carbon nanotubes (CNTs)/magnetite nanocomposites (MNPs) by covalent interaction. The structure and morphology of CNTs/MNPs nanocomposites were characterized by FT-IR, XRD and TEM. The magnetic properties and electrical properties were measured by vibrating sample magnetometer (VSM) and LCR meter. The results showed that MNPs were effectively attached onto the surface of CNTs and CNTs/MNPs nanocomposites exhibited outstanding electrical and magnetic response. The saturation magnetization and electrical conductivity can reach ~ 40emu/g and 3.82×10-1S•cm-1, respectively. These one-dimensional electromagnetic nanostructures may find a wide range of applications in nanoelectronics, magnetic data storage, magnetically guided drug delivery and biosensors.