The influence of anisotropy of elastic energy on electron-phonon relaxation and the role of shear waves in the electrical resistance of potassium crystals are investigated. It is shown that, at temperatures much lower than the Debye temperature (T<< θD), the contribution of slow quasi-transverse phonons to the electrical resistance of potassium crystals exceeds that of longitudinal phonons by an order of magnitude. Earlier, the Bloch-Grüneisen theory left aside this component under the above conditions. At the same time, at high temperatures(T>>θD), the contribution of longitudinal phonons to the electrical resistance turns out to be 4 times greater than the total contribution of electron relaxation by fast and slow transverse modes. The role of shear waves in the electrical resistance of potassium crystals is analyzed. It is shown that, at low temperatures, this mechanism provides 32% of the total electrical resistance. It is 4 times higher than the contribution of longitudinal phonons to the electrical resistance and should be taken into account when analyzing the electrical resistance of alkali metals. The distribution function of the most effective phonons for electrical resistance is defined, and the inelasticity of electron-phonon scattering is analyzed. It is shown that the calculated results of the electrical resistance of potassium in the temperature range from 40 to 400 K, taking into account the anisotropy of elastic energy, are in good agreement with the experimental data without the use of fitting parameters.
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