Quantum Mechanical Tunneling Of Electrons Research Articles

Playing Catch with Electrons: A Dynamic Metaphor for Chemical Bonding with an Extension of the Tunneling Model to Gas-Phase Molecules.

Quantum mechanical electron tunneling is explored as the mediator of chemical bonding. Three topics are addressed. First, a baseball game-of-catch metaphor is employed to elucidate the physics of chemical bonding. According to this metaphor, a baseball player, a baseball, and the act of throwing a baseball are analogous to an atom, an electron, and the act of electron tunneling. Using this framework, the tunneling physics of covalent, polar covalent, ionic, and hydrogen bonding is clarified. Second, gas-state energies associated with frontier orbital positioning are established and are used in the chemical bond tunneling assessment of four homopolar bonds, H-H, N≡N, O=O, and F-F, and four heteropolar bonds, H-F, H-Cl, H-Br, and H-I. Third, a new procedure for estimating solid-state tunneling parameters is introduced, involving quantum confinement of gas-state energy frontier orbitals.

Reversible Quantum-Dot Cellular Automata-Based Arithmetic Logic Unit.

Quantum-dot cellular automata (QCA) are a promising nanoscale computing technology that exploits the quantum mechanical tunneling of electrons between quantum dots in a cell and electrostatic interaction between dots in neighboring cells. QCA can achieve higher speed, lower power, and smaller areas than conventional, complementary metal-oxide semiconductor (CMOS) technology. Developing QCA circuits in a logically and physically reversible manner can provide exceptional reductions in energy dissipation. The main challenge is to maintain reversibility down to the physical level. A crucial component of a computer's central processing unit (CPU) is the arithmetic logic unit (ALU), which executes multiple logical and arithmetic functions on the data processed by the CPU. Current QCA ALU designs are either irreversible or logically reversible; however, they lack physical reversibility, a crucial requirement to increase energy efficiency. This paper shows a new multilayer design for a QCA ALU that can carry out 16 different operations and is both logically and physically reversible. The design is based on reversible majority gates, which are the key building blocks. We use QCADesigner-E software to simulate and evaluate energy dissipation. The proposed logically and physically reversible QCA ALU offers an improvement of 88.8% in energy efficiency. Compared to the next most efficient 16-operation QCA ALU, this ALU uses 51% fewer QCA cells and 47% less area.

Bonding and Tunneling.

Quantum mechanical electron tunneling is proposed as the mediator of chemical bonding. Covalent, ionic, and polar covalent bonds all rely on quantum mechanical tunneling, but the nature of tunneling differs for each bond type. Covalent bonding involves bidirectional tunneling across a symmetric energy barrier. Ionic bonding occurs by unidirectional tunneling from the cation to the anion across an asymmetric energy barrier. Polar covalent bonding is a more complicated type of bidirectional tunneling, consisting of both cation-to-anion and anion-to-cation tunneling across asymmetric energy barriers. Tunneling considerations suggest the possibility of another type of bond-denoted polar ionic-in which tunneling involves two electrons across asymmetric barriers.

Optical response of metallic nanostructures using quantum hydrodynamic theory and a hybridizable discontinuous Galerkin method

An accurate modeling of the optical interactions in metallic nanostructures with subnanometer features requires an accurate description of quantum effects at the scale of billions of atoms. At such scale, first-principle methods are not computationally viable. Quantum hydrodynamic theory (QHT) has emerged as a powerful method that includes nonlocal contributions of the kinetic energy and the spatial dependence of the electron density, and it can predict both plasmon energy and spill-out effects in large metal nanoparticles. In this paper, we introduce a hybridizable discontinuous Galerkin method for solving Maxwell's equations coupled with a QHT model in order to account for quantum effects in three-dimensional metallic nanostructures. The coupled system of Maxwell's equations and QHT model is not only nonlinear but also multi-scale due to the interaction between the micrometer electromagnetic waves and the nanometer cavities of metallic nanostructures. We present extensive numerical experiments to validate the QHT model and demonstrate the capability of the HDG method to provide accurate solutions in the presence of strong nonlinearities and multiple length scales. These results offer a possibility to enhance nonlinear optical effects or to harness quantum mechanical electron tunneling by engineering metallic nanostructures at the quantum level.

Charge trapping effect at the interface of ferroelectric/interlayer in the ferroelectric field effect transistor gate stack

We study the charge trapping phenomenon that restricts the endurance of n-type ferroelectric field-effect transistors (FeFETs) with metal/ferroelectric/interlayer/Si (MFIS) gate stack structure. In order to explore the physical mechanism of the endurance failure caused by the charge trapping effect, we first establish a model to simulate the electron trapping behavior in n-type Si FeFET. The model is based on the quantum mechanical electron tunneling theory. And then, we use the pulsed I d–V g method to measure the threshold voltage shift between the rising edges and falling edges of the FeFET. Our model fits the experimental data well. By fitting the model with the experimental data, we get the following conclusions. (i) During the positive operation pulse, electrons in the Si substrate are mainly trapped at the interface between the ferroelectric (FE) layer and interlayer (IL) of the FeFET gate stack by inelastic trap-assisted tunneling. (ii) Based on our model, we can get the number of electrons trapped into the gate stack during the positive operation pulse. (iii) The model can be used to evaluate trap parameters, which will help us to further understand the fatigue mechanism of FeFET.

GPS-free synchronized pseudo-random number generators for internet-of-things

IntroductionSecuring wireless communications in internet-of-things (IoT) requires both generation and synchronization of random numbers in real-time. However, resource constraints on an IoT device limit the use of computationally intensive random number generators and the use of global positioning systems (GPS) for synchronization. In this paper, we propose a synchronized pseudo-random number generator (SPRNG) that uses a combination of a fast, low-complexity linear-feedback-shift-register (LFSR) based PRNG and a slow but secure, synchronized seed generator based on self-powered timers.MethodsA prototype synchronized self-powered timer (SSPT) array was fabricated in a standard silicon process and was used to generate dynamic random seeds for the LFSR. The SSPTs use quantum-mechanical tunneling of electrons to operate without any external power and are practically secure against tampering, snooping, and side-channel attacks (both power and electromagnetic).ResultsIn this work, we explore protocols to periodically and securely generate random bits using the self-powered timers for seeding the LFSR. We also show that the time-varying random seeds extend and break the LFSR periodic cycles, thus making it difficult for an attacker to predict the random output or the random seed. Using the National Institute of Standards and Technology (NIST) test suite we verify the randomness of the measured seeds from the fabricated ensemble of SSPTs together with the random bit sequences generated by a software-seeded LFSR.DiscussionsIn this modality, the proposed SPRNG could be used as a trusted platform module (TPM) on IoTs and used for verifying and authenticating secure transactions (e.g., software upgrades). Since the SPRNG system does not require access to GPS for synchronization, therefore it could be used in many resource-constrained and adversarial environments.

Optical Anisotropy in van der Waals materials: Impact on Direct Excitation of Plasmons and Photons by Quantum Tunneling

Inelastic quantum mechanical tunneling of electrons across plasmonic tunnel junctions can lead to surface plasmon polariton (SPP) and photon emission. So far, the optical properties of such junctions have been controlled by changing the shape, or the type of the material, of the electrodes, primarily with the aim to improve SPP or photon emission efficiencies. Here we show that by tuning the tunneling barrier itself, the efficiency of the inelastic tunneling rates can be improved by a factor of 3. We exploit the anisotropic nature of hexagonal boron nitride (hBN) as the tunneling barrier material in Au//hBN//graphene tunnel junctions where the Au electrode also serves as a plasmonic strip waveguide. As this junction constitutes an optically transparent hBN–graphene heterostructure on a glass substrate, it forms an open plasmonic system where the SPPs are directly coupled to the dedicated strip waveguide and photons outcouple to the far field. We experimentally and analytically show that the photon emission rate per tunneling electron is significantly improved (~ ×3) in Au//hBN//graphene tunnel junction due to the enhancement in the local density of optical states (LDOS) arising from the hBN anisotropy. With the dedicated strip waveguide, SPP outcoupling efficiency is quantified and is found to be ∼ 80% stronger than the radiative outcoupling in Au//hBN//graphene due to the high LDOS of the SPP decay channel associated with the inelastic tunneling. The new insights elucidated here deepen our understanding of plasmonic tunnel junctions beyond the isotropic models with enhanced LDOS.

Exploring the non-equilibrium fluctuation relation for quantum mechanical tunneling of electrons across a modulating barrier

We experimentally explore the phenomenon of electron tunneling across a modulated tunneling barrier which is created between an STM tip and an Au film deposited on a vibrating piezo surface. Measurements of the time series of the quantum mechanical tunneling current across the modulating barrier show large fluctuations. Analysis of the average work done in establishing tunneling current in finite time interval shows a distribution of both positive and negative work events. The negative work events suggest tunneling against the bias voltage direction. We show that these distributions obey the Gallavotti Cohen Non-equilibrium Fluctuation Relations (GC-NEFR) valid for systems driven through a dissipating environment. Typically, while the GC-NEFR has been shown for non -equilibrium classical systems we show its validity for the quantum mechanical tunneling process too. The GC-NEFR analysis also gives us a way to measure the dissipation present in this quantum tunneling system. We propose the modulated barrier behaves like a lossy scattering medium for the tunneling electrons resulting in a tendency to randomize of the tunneling process.

Sustained Benefits of NCFETs Under Extreme Scaling to the End of the IRDS

We use full quantum-transport simulations by coupling the Landau-Khalatnikov (LK) and Poisson equations self-consistently with the nonequilibrium Green's function (NEGF) formalism, and calibrated to experimental results, to investigate extremely scaled negative-capacitance, field-effect transistors (NCFETs) having dimensions toward the end of the international roadmap for devices and systems (IRDS), that is, to sub-10-nm gate lengths, where channel transport can be expected to be governed by quantum-mechanical effects. We identify how the ferroelectric affects both thermionic emission and quantum-mechanical tunneling of electrons, both of which are relevant transport mechanisms for these ultrascaled devices. Our detailed results show that while NCFETs are not immune to the increase in the tunneling as they undergo extreme channel-length scaling, the metal-ferroelectric-insulator-semiconductor (MFIS) structure will continue to offer benefits to a subthreshold slope, ON- and OFF-currents, drain-induced barrier lowering, and output conductance until the end of the roadmap. These improvements allow MFIS NCFETs of any given node to achieve similar performance to nonferroelectric devices of the immediately preceding (higher-dimension) node. The fundamental reason for the improvements is identified to be the presence of voltage amplification at the top of the barrier (TOB) and suppression of TOB movement with drain voltage.

Dielectric and electromagnetic interference shielding properties of high entropy (Zn,Fe,Ni,Mg,Cd)Fe2O4 ferrite

The new (Zn,Mg,Ni,Fe,Cd)Fe2O4 high entropy ferrite with average crystallite size 11.8 nm was synthesized in two stages by annealing of co-precipitated amorphous precursor. The dielectric spectroscopy confirms, that the electrical conductivity and polarization processes are associated with the mobility of electrons in the structure of ferrite. It was concluded, that the both, high frequency complex dielectric permittivity as well as complex magnetic permeability are strongly temperature and frequency dependent. The AC electrical conductivity is associated with quantum mechanical tunneling of electrons and related to the transfer of charge carriers between Fe2+ and Fe3+ ions. Moreover, the microwave absorption properties were determined. The best microwave absorption properties have been confirmed in the frequency range 1.9 to 2.1 GHz for a layer which is 0.8–1 cm thick. For this range, reflection loss (RL) is lower than −25 dB and shielding effectiveness (SE) lower than −50 dB.

Electronic-Reconstruction-Enhanced Tunneling Conductance at Terrace Edges of Ultrathin Oxide Films.

Quantum mechanical tunneling of electrons across ultrathin insulating oxide barriers has been studied extensively for decades due to its great potential in electronic-device applications. In the few-nanometers-thick epitaxial oxide films, atomic-scale structural imperfections, such as the ubiquitously existed one-unit-cell-high terrace edges, can dramatically affect the tunneling probability and device performance. However, the underlying physics has not been investigated adequately. Here, taking ultrathin BaTiO3 films as a model system, an intrinsic tunneling-conductance enhancement is reported near the terrace edges. Scanning-probe-microscopy results demonstrate the existence of highly conductive regions (tens of nanometers wide) near the terrace edges. First-principles calculations suggest that the terrace-edge geometry can trigger an electronic reconstruction, which reduces the effective tunneling barrier width locally. Furthermore, such tunneling-conductance enhancement can be discovered in other transition metal oxides and controlled by surface-termination engineering. The controllable electronic reconstruction can facilitate the implementation of oxide electronic devices and discovery of exotic low-dimensional quantum phases.

Positive charge trapping phenomenon in n-channel thin-film transistors with amorphous alumina gate insulators

In this work, we investigate the charge trapping behavior in InGaZnO4 (IGZO) thin-film transistors with amorphous Al2O3 (alumina) gate insulators. For thicknesses ≤10 nm, we observe a positive charge generation at intrinsic defects inside the Al2O3, which is initiated by quantum-mechanical tunneling of electrons from the semiconductor through the Al2O3 layer. Consequently, the drain current shows a counter-clockwise hysteresis. Furthermore, the de-trapping through resonant tunneling causes a drastic subthreshold swing reduction. We report a minimum value of 19 mV/dec at room temperature, which is far below the fundamental limit of standard field-effect transistors. Additionally, we study the thickness dependence for Al2O3 layers with thicknesses of 5, 10, and 20 nm. The comparison of two different gate metals shows an enhanced tunneling current and an enhanced positive charge generation for Cu compared to Cr.

Nano Electronics: A New Era of Devices

The technical and economic growth of the twentieth century was marked by evolution of electronic devices and gadgets. The day-to-day lifestyle has been significantly affected by the advancement in communication systems, information systems and consumer electronics. The lifeline of progress has been the invention of the transistor and its dynamic up-gradation. Discovery of fabricating Integrated Circuits (IC’s) revolutionized the concept of electronic circuits. With advent of time the size of components decreased, which led to increase in component density. This trend of decreasing device size and denser integrated circuits is being limited by the current lithography techniques. Non-uniformity of doping, quantum mechanical tunneling of electrons from source to drain and leakage of electrons through gate oxide limit scaling down of devices. Heat dissipation and capacitive coupling between circuit components becomes significant with decreasing size of the components. Along with the intrinsic technical limitations, downscaling of devices to nanometer sizes leads to a change in the physical mechanisms controlling the charge propagation. To deal with this constraint, the search is on to look around for alternative materials for electronic device application and new methods for electronic device fabrication. Such material is comprised of organic molecules, proteins, carbon materials, DNA and the list is endless which can be grown in the laboratory. Many molecules show interesting electronic properties, which make them probable candidates for electronic device applications. The challenge is to interpret their electronic properties at nanoscale so as to exploit them for use in new generation electronic devices. Need to trim downsize and have a higher component density have ushered us into an era of nanoelectronics.

Quantum Mechanical Tunneling of Electrons in Quantum Wire p–n Junctions

Quantum Mechanical Tunneling of Electrons in Quantum Wire <i>p</i>–<i>n</i> Junctions

Electrical conductivity spectra of Sn doped BaTi0.95Zr0.05O3

The alternating current (ac) conductivity spectra of Sn doped BaTi0.95Zr0.05O3 prepared by solid state reaction have been studied in the temperature range of 373–473 K. Mixed valency of Sn atoms and the oxygen vacancy controls electrical transport process. The ac conductivity follows Jonscher type power law as a function of frequency. Derived dc conductivity and hopping frequency follow Arrhenius type temperature dependency and have same activation energy. Almost temperature independent nature of frequency exponent indicates that the electrical conduction in Zr and Sn co-doped BaTiO3 relaxor is quantum mechanical electron tunneling. The conductivity spectra are perfectly scaled using the scaling parameters as dc conductivity and hopping frequency.

Carbon Nanotubes: Distinct Mechanisms of DNA Sensing Based on N‐Doped Carbon Nanotubes with Enhanced Conductance and Chemical Selectivity (Small 4/2014)

The DNA sequencing approach based on the quantum-mechanical electron tunneling has seen considerable advances in recent years, and particularly carbon nanomaterials have emerged as promising candidates to replace metal electrodes. On page 774, Y.-H. Kim and co-workers show theoretically that nitrogen-doped carbon nanotubes (CNTs) electrodes with the ability to act both as electron donors and electron acceptors can achieve a novel DNA sequencing mechanism based on the tunneling that is highly sensitive to the chemical connectivity between the CNT nitrogen doping sites and the functional groups of DNA molecules.

Making Contact with Sequencing's Fourth Generation

Today's next-generation sequencing systems rely on optical detection to decode nucleotide sequences. But as Jeffrey Perkel reports, a new generation of optics-free sequencing instruments could result in longer reads, faster runs, and lower costs.

The role of tunneling barrier modification for the saturation current of carbon nanotube field emission in strong electric field

Based on quantum mechanical tunneling of electrons in field emission, a new model has been described to explain the saturation of emission current for carbon nanotube (CNT) emitters. The formulation reveals the effect of geometrical aspect ratio of CNT and the effect of high electric field for non-Fowler–Nordheim (F–N) behavior in field emission characteristics. It is found that for a CNT of aspect ratio ∼10 3, the tunneling barrier converges to a constant square potential well of a small thickness, at applied electric field ⩾3 × 10 6 V/m, resulting in field independent emission current.

Interheme electron tunneling in cytochrome c oxidase

Cytochrome c oxidase (CcO) is the terminal enzyme of the respiratory chain that catalyzes respiratory reduction of dioxygen (O(2)) to water in all eukaryotes and many aerobic bacteria. CcO, and its homologs among the heme-copper oxidases, has an active site composed of an oxygen-binding heme and a copper center in the vicinity, plus another heme group that donates electrons to this site. In most oxidoreduction enzymes, electron transfer (eT) takes place by quantum-mechanical electron tunneling. Here we show by independent molecular dynamics and quantum-chemical methods that the heme-heme eT in CcO differs from the majority of cases in having an exceptionally low reorganization energy. We show that the rate of interheme eT in CcO may nevertheless be predicted by the Moser-Dutton equation if reinterpreted as the average of the eT rates between all individual atoms of the donor and acceptor weighed by the respective packing densities between them. We argue that this modification may be necessary at short donor/acceptor distances comparable to the donor/acceptor radii.

Temperature Dependence of Electron Tunneling between Two Dimensional Electron Gas and Si Quantum Dots

Quantum mechanical electron tunneling has potential applications in both science and technology, such as flash memories in modern LSI technologies and electron transport chains in biosystems. Although it is known that one-dimensional quantum electron tunneling lacks temperature dependence, the behavior of electron tunneling between different dimensional systems is still an open question. Here, we investigated the electron tunneling between a two-dimensional electron gas (2DEG) and zero-dimensional Si quantum dots and discovered an unexpected temperature dependence: At high temperature, the gate voltage necessary for electron injection from 2DEG to Si quantum dots becomes markedly small. This unusual tunneling behavior was phenomenologically explained by considering the geometrical matching of wave functions between different dimensional systems. We assumed that electron tunneling would occur within a finite experimental measurement time. Then, the observed electron tunneling is explained only by the contributions of wave packets below the quantum dot with a finite lifetime rather than the ordinary thermal excited states of 2DEG.