Effects of recurrence and multiplication in the spatial distribution of the probability-flux density j x(x, z) (or the quantum-mechanical current density ej x(x, z), where e is the elementary charge), which arise from electron-wave interference in two-dimensional semiconductor nanostructures, are analyzed, and the possibility of controlling these effects by the application of a dc transverse electric field is examined. A type of nanostructure represented by two rectangular quantum wells (a wide one and a narrow one) whose widths are measured in the direction of the z axis (the quantum-confinement axis) with the wells arranged sequentially in the direction of propagation of the electron wave (the x axis) is considered. It is shown that, for an electron wave entering the wide well from the narrow well, the initial transverse distribution peak j x(0, z) is reproduced with some accuracy at distances X p = pX 1 (recurrence) and, in nanostructures symmetric along the z axis, splits at distances X 1/q into q identical peaks of magnitude reduced by a factor of q (multiplication) (here, p and q are integers). It is demonstrated that these effects can be controlled by a dc electric field applied in the transverse direction (along the z axis) in the region of the wide quantum well. A reduction in the effective well width and appearance of asymmetry in the transverse potential profile upon application of the electric field cause a radical change in the j x(x, z) distribution in this quantum well and make possible inverse population of the quantum-confinement subbands.