Epitaxially-fused superlattices of colloidal quantum dots (QD epi-SLs) may exhibit electronic minibands and high-mobility charge transport, but doing so requires epi-SLs with extremely high degrees of spatial and chemical (compositional) uniformity. In this talk, I will discuss both our efforts to understand and improve the epi-SL formation process, as well as recent charge transport studies on single epi-SL grains.Epi-SLs are synthesized from a parent SL structure, typically composed of QDs with long insulating ligands. Over the past several years, we have developed insight into the physical and chemical mechanisms by which this parent SL structure is converted into an epi-SL. I will present detailed, multi-model structural characterization of the SL structures, which unveils the astonishing choreographic process by which millions of QDs rotate and translate, in concert, to form the epi-SL.This structural transformation is initiated by chemical changes to the QD ligand layer, usually through manual introduction of liquids into the SL film. Mechanistic studies into this ligand-exchange process reveal a multi-step chemical sequence that initiates with a simple acid-base reaction. We exploit this insight to fabricate epi-SLs by means of photochemical triggering (using ultraviolet illumination) rather than alternative “hands-on” techniques which suffer from poor experimental control and pronounced chemical inhomogeneity and structural damage in the films. The use of light to trigger the SL conversion process enables much finer control in both the temporal and spatial domains, opening the door to much larger-area SL films and direct photopatterning of epi-SLs.In the latter portion of the talk, I will present recent work charge transport studies in individual, highly-ordered PbSe QD epi-SL grains. One technical challenge in making these devices is the inherent mismatch in using traditional microfabrication techniques to make single-grained devices of air-sensitive materials. Here, we demonstrate the air-free fabrication of microscale field-effect transistors (μ-FETs) with channels consisting of single PbSe QD epi-SL grains (~ 1 -10 µm grain sizes) and analyze charge transport phenomena in these samples. The devices exhibit p-channel or ambipolar transport with a hole mobility as high as 3.5 cm2 V–1 s–1 at 290 K and 6.5 cm2 V–1 s–1 at 170–220 K, one order of magnitude larger than that of previous QD solids.
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