Abstract Inductive energy storage (IES) pulsed power generator driven by the silicon carbide (SiC)-MOSFET with the blocking voltage of 1.2 kV was developed. The IES pulsed power generator consists of a capacitor, a pulsed transformer and the SiC-MOSFET used as an opening switch. The influence of turn ratio of the pulsed transformer on the output voltage was evaluated. The amplitude of output voltage increased with increasing the secondary turn ratio. Under the conditions of no lord , a peak output voltage of 13 kV and a pulse width of 120 ns were obtained with a voltage across the drain-source terminals of the MOSFET of 1kV with no lord. The peak voltage value increased, and the peak current and pulse width value decreased with increasing load resistance and decreased capacitance. The maximum energy transfer efficiency was obtained with 500 Ω and was Approximately 56%.