Pulsed Laser Deposition Process Research Articles

Comparative Study of Indium Oxide Films for High‐Mobility TFTs: ALD, PLD and Solution Process

AbstractDeposition of indium oxide base films for high‐mobility thin film transistors (TFTs) has been an important part in the implementation of high‐resolution and high‐frequency display back panels. In this study, three types of In2O3 (InO) films have been fabricated for TFTs using atomic layer deposition (ALD), pulsed laser deposition (PLD), and solution process, respectively. ALD‐derived InO films show controllable grain formation and optimized TFTs show the field effect mobility of ≈100 cm2 V−1s−1 in both the conventional transistor measurements and critical four‐probe measurements, reaching the level of low‐temperature polycrystalline silicon (LTPS). Combined spectroscopy investigations show that the ALD‐derived InO film features advantages as compared to those of the PLD‐deposited and solution‐processed InO film in providing a smoother surface morphology, good crystallinity, and more orderly atomic growth mode. Moreover, the bias‐stress stability of ALD‐derived TFTs can be improved with further passivation.

Synthesis of Sn-ZnO nanostructures on MgO by hybrid pulsed laser ablation and RF magnetron sputtering tandem system for CO gas-sensing application

An exceptional method of incorporating Sn ions into Zinc Oxide (ZnO) using a tandem system of Pulsed Laser Deposition (PLD) and Radio-Frequency Magnetron Sputtering (RFMS) to synthesize and functionalize ZnO nanostructures is demonstrated in this study for gas-sensing application. The RFMS power was varied up to 50 W to sputter a pure Sn metal target, while simultaneously or successively growing ZnO nanostructures on a templated MgO < 0001 > substrate and on an Au-plated Al2O3 gas sensor, via PLD process at the substrate temperature of 700 °C in 100–500 millitorr oxygen/argon gas background. The morphologies of the grown Sn-ZnO nanostructures were characterized by Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), and X-ray Diffraction (XRD), and while their chemical/oxidation states and optical properties were analyzed by X-ray photospectroscopy (XPS) and photoluminescence (PL), respectively. For simultaneous deposition, the resulting (0002)-dominated 2D grain-like ZnO nanostructures were influenced by the interaction of the dynamic PLD plasma with static RFMS plasma at different powers. For successive growth, at 50 W-RF power, a remarkable increase in the sensor response to 50-ppm carbon monoxide (CO) gas was observed at 250 °C, which could be attributed to the creation of more adsorption sites in the Sn-ZnO depletion region caused by the replacement of some Zn sites with Sn ions in the ZnO matrix. This study, therefore, exhibits the viability of this hybrid system to design, synthesize, and functionalize Sn-ZnO nanomaterials, either by simultaneous/successive deposition, for gas-sensing applications.

Optimization of Pulsed Laser Energy Density for the Preparation of MoS2 Film and Its Device by Pulsed Laser Deposition.

This article aims to explore the most optimal pulsed laser energy density when using the pulsed laser deposition (PLD) process to prepare the MoS2 films. We gradually increased the pulsed laser energy density from 70 mJ·cm-2 to 110 mJ·cm-2 and finally determined that 100 mJ·cm-2 was the best-pulsed laser energy density for MoS2 films by PLD. The surface morphology and crystallization of the MoS2 films prepared under this condition are the best. The films consist of a high-crystallized 2H-MoS2 phase with strong (002) preferential orientation, and their direct optical band gap (Eg) is 1.614 eV. At the same time, the Si/MoS2 heterojunction prepared under the optimal pulsed laser energy density shows an opening voltage of 0.61 V and a rectification ratio of 457.0.

Enhancing photodetection performance through laser fluence control: SnO2 nanostructured deposited on porous silicon

In this study, we have covered a porous silicon (PS) layer with tin dioxide (SnO2) nanostructured via a pulsed laser deposition process to produce a broadband photoresponse device. The impact of laser fluence on the optical, electrical, and structural characteristics of the fabricated photodetector was identified. The optical features analysis indicated that the SnO2 films covered on porous silicon have a direct energy gap varying from 3.62 to 3.67 eV as a function of laser fluence. The X-ray diffraction investigation proved that the SnO2 nanostructure has a tetragonal rutile nature. The Field-emission scanning electron microscopy emphasised that produced SnO2 nanostructures have a mean size of 81.76–98.68 nm, and nanoparticle agglomeration was remarked. The photoluminescence emissions of SnO2 nanostructure placed on porous silicon displayed a variety of overlapping intensities in the near-ultraviolet/visible spectrum between 369 and 506 nm, while the intense red band decreased in intensity and shifted towards longer wavelengths. Fourier-transformed infrared spectroscopy investigation indicates the existence of the Sn-O-Si bond in the formed structure.The dependence of the optoelectronic characteristics of PS/n-Si and SnO2/PS/n-Si photodetector on laser fluence has been performed. Produced heterojunctions have remarkable rectification properties with ideality factors ranging from 2.27 to 2.91, relying on the laser fluence. The spectral responsivity analysis showed that SnO2/PS/n-Si photodetectors exhibit three response bands at ∼366 nm, ∼621 nm, and ∼806 nm, regarding the highest responsivity of 0.21 A/W, 0.33 A/W, and 0.43 A/W, respectively. The findings suggest that SnO2/PS/n-Si heterojunction photodetectors are suitable for developed ultraviolet–visible light detection enhanced photodiodes that are cost-effective and convenient for use in wearable and portable devices without expensive extra gadgets.

The use of He buffer gas for moderating the plume kinetic energy during Nd:YAG-PLD growth of EuxY2−xO3 phosphor films

We have investigated the He buffer gas process of moderating the kinetic energy of the pulsed laser deposition (PLD) plume during EuxY2−xO3 phosphor film growth. When using a neodymium yttrium aluminum garnet laser for PLD thin film growth, the kinetic energy of the ablation plumes can be high enough to cause the formation of point defects in the film. The buffer gas pressure is an important process parameter in PLD film growth. We find that the presence of the He buffer gas reduces the kinetic energy of the laser deposition plume through many low-angle collisions in the gas phase by a factor of 7 without reducing the deposition rate. This is because He is much lighter than any of the elements in the plume and it does not affect the composition of the oxide films. Consequently, the resputtering of the Y2O3 film surface by the plume was significantly suppressed in the presence of the He gas moderator, leading to a decrease of the defect density in the Y2O3 films. The improvement of the film quality was verified by a systematic analysis of time-resolved photoluminescence (PL) data for EuxY2−xO3 composition–gradient films. The PL lifetime and intensity of Eu0.2Y1.8O3, which shows the highest PL intensity, increased by 13.3% and 36.4%, respectively, when the He gas moderation process was used. The He buffer gas process is applicable to the PLD growth of the other oxide materials as well, where the reduction of the kinetic energy of the plume would bring the PLD process closer to the molecular beam epitaxy growth condition.

Optimization of Laser-Wavelength Dependence for Open-Air Atmospheric Pressure Pulsed Laser Deposition of AlCrFeMnTi High-Entropy Alloy for Tailored Surface Properties.

High-entropy alloys (HEAs) have garnered significant attention in different fields due to their exceptional mechanical and physical properties, making them promising candidates for various applications. Several techniques, including physical vapor deposition and pulsed laser deposition (PLD), have been employed for the fabrication of HEA thin films. In this study, we explore a novel approach to synthesizing the lightweight HEA (LWHEA) AlCrFeMnTi using PLD in air at atmospheric pressure with a particular focus on the influence of the laser wavelength on the deposition process and the resulting alloy characteristics. This research investigates the impact of different laser wavelengths on the LWHEA's characterization and the optimization of laser wavelength dependence in air at atmospheric pressure PLD of LWHEA AlCrFeMnTi for tailored surface properties such as phase composition, microstructure, and corrosion resistance. Systematically varying the laser wavelength was attempted to optimize the deposition conditions. This was aimed at achieving enhanced properties and precise control over the alloy's composition. This work contributes to a deeper understanding of the open air PLD process for LWHEAs and sheds light on the role of the laser wavelength in tailoring their properties, which can have significant implications for the development of advanced materials for aerospace, automotive, and other high-performance applications. Ultimately, this research aims to provide valuable insights into the design and fabrication of LWHEAs with tailored properties through laser-based deposition techniques.

Micro-structural, electrical, and tribological properties of SiC/DLC composite coating grown by PLD on steel

Protective diamond-like carbon (DLC) composite coating was grown on cylindrical steel surface in a simple inclined pulsed laser deposition (PLD) process. Based on this kind of flexible film-synthesis method, mixed deposition was used to generate the gradient interface that could enhance adhesive strength in Ti/SiC interface, and periodic SiC/DLC layers were grown to reduce residual stress of the pure DLC film. This kind of PLD-grown SiC/DLC composite coating on the curved thin steel that was imitated as piston cylinder showed excellent adhesive property and toughness. Compared with the bare steel, DLC-filmed steel strip had a much lower friction coefficient, higher nano-hardness, and enhanced elastic modulus. Raman spectroscopies showed transform of the micro-structure in DLC layers during friction process, revealing the important reason for reducing friction coefficient. Electrical conductivity test displayed the DLC-filmed steel strip was in high resistance state, although its thickness was only 1.27 μm. Further on, good adhesive strength, excellent toughness and high resistance state of SiC/DLC composite coating could be applied in the MEMS advices.

Femtosecond Laser Irradiation to Zirconia Prior to Calcium Phosphate Coating Enhances Osteointegration of Zirconia in Rabbits.

Calcium phosphate (CaP) coating of zirconia and zirconia-based implants is challenging, due to their chemical instability and susceptibility to thermal and mechanical impacts. A 3 mol% yttrium-stabilized tetragonal zirconia polycrystal was subjected to femtosecond laser (FsL) irradiation to form micro- and submicron surface architectures, prior to CaP coating using pulsed laser deposition (PLD) and low-temperature solution processing. Untreated zirconia, CaP-coated zirconia, and FsL-irradiated and CaP-coated zirconia were implanted in proximal tibial metaphyses of male Japanese white rabbits for four weeks. Radiographical analysis, push-out test, alizarin red staining, and histomorphometric analysis demonstrated a much improved bone-bonding ability of FsL-irradiated and CaP-coated zirconia over CaP-coated zirconia without FsL irradiation and untreated zirconia. The failure strength of the FsL-irradiated and CaP-coated zirconia in the push-out test was 6.2-13.1-times higher than that of the CaP-coated zirconia without FsL irradiation and untreated zirconia. Moreover, the adhesion strength between the bone and FsL-irradiated and CaP-coated zirconia was as high as that inducing host bone fracture in the push-out tests. The increased bone-bonding ability was attributed to the micro-/submicron surface architectures that enhanced osteoblastic differentiation and mechanical interlocking, leading to improved osteointegration. FsL irradiation followed by CaP coating could be useful for improving the osteointegration of cement-less zirconia-based joints and zirconia dental implants.

Control of growth kinetics during remote epitaxy of complex oxides on graphene by pulsed laser deposition

Remote epitaxy through 2D materials opens new opportunities for research and application, overcoming some limitations of classical epitaxy and allowing the creation of freestanding layers. However, using graphene as a 2D interlayer for remote epitaxy of metal oxides is challenging, particularly when carried out by pulsed laser deposition (PLD). The graphene layer can be easily oxidized under the typically applied high oxygen pressures, and the impact of highly kinetic particles of the plasma plume can lead to severe damages. In this study, both aspects are addressed: Argon is introduced as an inert background gas in order to avoid oxidation and to reduce the kinetic impact of the plasma species on graphene. The laser spot size is minimized to control the plasma plume and particle flux. As a model system, strontium titanate (STO) is quasi-homoepitaxially grown on graphene buffered STO single crystals. Raman spectroscopy is performed to evaluate the 2D, G, and D band fingerprints of the graphene layer and to assess the defect structure of the interlayer after the deposition. Our results prove that control of the growth kinetics by reducing the laser spot size and by using high argon pressures provides a key strategy to conserve graphene with a low defect density during PLD while allowing a layer-by-layer growth of structurally coherent oxide layers. This strategy may be generalized for the PLD remote epitaxy of many complex oxides, opening the way for integrating 2D materials with complex oxides using widely accessible PLD processes.

Micro-structural and optical properties of diamond-like carbon films grown by magnetic field-assisted laser deposition

Inhomogeneous magnetic field is introduced into pulsed laser deposition process, in order to find new properties of diamond-like carbon film grown under magnetic field, thereby offering the theoretical and experimental basis for further enhancing sp&lt;sup&gt;3&lt;/sup&gt;-bond content in this film. Distribution of the magnetic strength and flux lines induced by a rectangular permanent magnet is calculated. And then, flying trace of the carbon ions in the magnetic field is also simulated by the iterative method, which indicates that the carbon ions cannot expand freely and they are confined and accumulate around the center region of the magnet source. Beside the surface interference, the measurement and the fitted results of ellipsometry parameters show that magnetic field exerts an important influence on layer-thickness distribution and optical constant of the pulsed laser deposition-grown diamond-like carbon film. Meanwhile, it is indicated that the inhomogeneity of the layer-thickness distribution and optical constant increase when the magnetic strength is higher. Micro-structure of diamond-like carbon film is affected seriously by magnetic field, which is indicated by Raman spectra. Magnetic field can enhance the local stress in the carbon matrix net, increasing the sp&lt;sup&gt;3&lt;/sup&gt;-bond content. Theoretical research and experimental research both show that a suitable magnetic strength can excite micro-structure of diamond-like carbon film significantly, and the high-quality diamond-like carbon coating with practical application value will be obtained by technological adjustment.

Automated extraction of synthesis parameters of pulsed laser-deposited materials from scientific literature

An efficient data-driven literature-based discovery approach is utilized, that is capable of extracting knowledge from materials science-related text, related to Pulsed Laser Deposition (PLD), aiming to extract various processing parameters that are critical during the PLD process.

Improved solar cell efficiency of titanium dioxide on porous silicon using pulsed laser deposition at different laser wavelengths

In this study, a Q-switched Nd:YAG laser with specific parameters, including a pulse repetition rate of 6 Hz, a pulse duration of 10 nm, a wavelength of 532 nm, and a laser fluence of 237.47 J cm−12, was employed to fabricate highly crystalline TiO2 nano-films. These nano-films exhibited a narrow energy band gap of 3.24 eV and showcased favorable surface morphology, characterized by a roughness of 2.38 nm. A solar cell device was produced by creating porous silicon (PSi) and applying titanium dioxide films onto the PSi, achieving a notable conversion efficiency of 8.733%. To investigate the impact of different parameters on the resulting TiO2 nano-films, a range of laser fluences (ranging from 131.93 to 263.85 J cm−12) and three distinct laser wavelengths (1064 nm, 532 nm, and 355 nm) were employed during the pulsed laser deposition (PLD) process. These experiments aimed to grow TiO2 films on both quartz and silicon (Si) substrates.

All-inorganic flexible epitaxial SrNbO3/mica thin films with ultrahigh figure of merit as indium-free transparent conductors

Nowadays, flexible transparent conductors (TCs) have been widely applied for solar cells, stretchable integrated circuits, sensor networks, and human-machine interaction devices. Recently, nondoped correlated metallic oxides (CMOs) have aroused great interest as indium-free TCs. In this work, an all-inorganic flexible CMO thin film with an ultrahigh figure of merit (FOM) value was fabricated using a simple preparation technology: the direct deposition of epitaxial SrNbO3 thin films on a stratiform mica substrate via a pulsed laser deposition (PLD) process. From the measured optical transmittance (Tr) spectra in conjunction with the ellipsometic data, it is found that SrNbO3 film possesses a superior visible light transparency compared with commonly investigated SrVO3 due to its larger bandgap. The charge transport measurements indicate that the dc electrical conductivity (σ) of SrNbO3 is higher than that of SrVO3, attributed presumably to a weaker electron correlation and therefore a smaller effective electron mass (m*) in SrNbO3. Bending cyclic tests reveals high mechanical durability and bending stability in SrNbO3 films. This detailed investigation demonstrates a great potential of the all-inorganic flexible epitaxial SrNbO3/mica film as an indium-free TC with high performance for future optoelectronic applications.

Design, fabrication and measurement of metal-semiconductor field effect transistor based on zinc oxide material

The paper mainly focuses on the design, fabrication and measurement on Zinc Oxide (ZnO)-based Metal-Semiconductor Field Effect Transistor. The research problem in this study is difficulty on observing the electronic properties of ZnO materials to fabricate the high performance transistor design with non-toxic semiconductor materials. Even though the wide band gap materials of Group III and V possess high performance properties for fabricating the power electronics devices, the harmful impacts could not be reduced. The research solution for the problem statement in this study is emphasized on the non-toxic materials of Group II and VI-based high performance power electronics devices fabrication. The experimental studies of the device fabrication were conducted by Pulse Laser Deposition (PLD) process in standard laboratory. The step-by-step procedures for MSFET device fabrication were discussed and the confirmation of developed device fabrication was completed. The approaches on all measurement were completed based on band diagram condition, quantum interference on metal-semiconductor materials, and current-voltage characteristics. The step by step measurement for fabricated device for the proposed structure could be confirmed by standard measurement techniques. The proposed design has been validated for the utilization of high performance applications. The physical properties and physical characteristics for measurement results were confirmed by the theoretical analyses. The numerical analyses have been completed with the help of MATLAB. All results have been proved by recent research works.

Phase transition from SrRuO3 to Sr3Ru2O7 by tuning oxygen pressure at low processing temperature

The epitaxial growth of Sr3Ru2O7 thin films in the Ruddlesden-Popper type remains a challenge as the growth temperature required for a typical pulsed laser deposition (PLD) process can be as high as 1100 °C. In this study, high quality Sr3Ru2O7 epitaxial thin films were obtained using PLD with a single SrRuO3 target. By adjusting the oxygen partial pressure, the structure underwent a phase transition from SrRuO3 to Sr3Ru2O7 facilitated by the formation and development of oxygen and ruthenium vacancies. Remarkably, for the first time, high-quality Sr3Ru2O7 thin films with good crystalline quality were successfully grown at a low temperature of 680 °C on SrTiO3 substrates.

Wafer-Scale Synthesis of 2D Materials by an Amorphous Phase-Mediated Crystallization Approach.

The interest in the wafer-scale growth of two-dimensional (2D) materials, including transition metal dichalcogenides (TMDCs), has been rising for transitioning from lab-scale devices to commercial-scale systems. Among various synthesis techniques, physical vapor deposition, such as pulsed laser deposition (PLD), has shown promise for the wafer-scale growth of 2D materials. However, due to the high volatility of chalcogen atoms (e.g., S and Se), films deposited by PLD usually suffer from a lack of stoichiometry and chalcogen deficiency. To mitigate this issue, excess chalcogen is necessary during the deposition, which results in problems like uniformity or not being repeatable. This study demonstrates a condensed-phase or amorphous phase-mediated crystallization (APMC) approach for the wafer-scale synthesis of 2D materials. This method uses a room-temperature PLD process for the deposition and formation of amorphous precursors with controlled thicknesses, followed by a post-deposition crystallization process to convert the amorphous materials to crystalline structures. This approach maintains the stoichiometry of the deposited materials throughout the deposition and crystallization process and enables the large-scale synthesis of crystalline 2D materials (e.g., MoS2 and WSe2) on Si/SiO2 substrates, which is critical for future wafer-scale electronics. We show that the thickness of the layers can be digitally controlled by the number of laser pulses during the PLD phase. Optical spectroscopy is used to monitor the crystallization dynamics of amorphous layers as a function of annealing temperature. The crystalline quality, domain sizes, and the number of layers were explored using nanoscale and atomistic characterization (e.g., AFM, STEM, and EDS) along with electrical characterization to explore process-structure-performance relationships. This growth technique is a promising method that could potentially be adopted in conventional semiconductor industries for wafer-scale manufacturing of next-generation electronic and optoelectronic devices.

Influence of pulsed laser scanning patterns on microstructural evolution and mechanical properties of Inconel 718 in direct laser deposition

The mechanical properties of direct laser deposition (DLD) parts are crucial for engineering applications, which are determined by the microstructure and texture. To achieve fine microstructure and higher mechanical performance, pulsed laser deposition is used to generate less heat accumulation and a higher cooling rate. However, the relationship between microstructure and thermal history is difficult to investigate due to the transient temperature change. In this work, a three-dimensional numerical model is developed to study the thermal behavior of the molten pool in the continuous laser deposition (CLD), the continuous pulsed laser deposition (CPLD), and the interval pulsed laser deposition (IPLD) processes. The microstructure of the deposition samples is investigated by optical microscope and electron back-scattered diffraction. The mechanical response of the deposition samples is investigated by tensile test and microhardness test. Compared with the CLD, CPLD, and IPLD result in higher temperature gradient and cooling rate, long columnar grains, and a strong fiber texture. However, grains with larger sizes and a texture with a herringbone pattern due to the change of heat flow are obtained in CLD samples. The test values of IPLD samples show higher tensile strength, higher yield strength, lower ductility, and higher hardness values. This research brings about a perspective for studying the thermal effects of deposition layers and a novelty deposition process to obtain specific microstructures and better mechanical properties.

Trace-level sensing of food toxins by flexible and cost-effective SERS sensors fabricated by pulsed-laser-deposition of gold nanoparticles on polycarbonate matrix

In viewpoint of rapid onsite screening of food contaminants, flexible surface enhanced Raman spectroscopy (SERS) sensors are developed by pulsed laser deposition process (PLD) with plasmonic gold nanoparticles (AuNPs) on the polycarbonate (PC) polymer matrix in the current study. PC/AuNPs with varying laser ablation pulses (200 NLP to 5000 NLP) tailored the morphological, structural and optical properties with their size and shape confinements. SERS properties of the prepared flexible PC/AuNPs sensors were optimized with Raman probe dye Rhodamine 6 G (R6G). Exorbitant SERS efficiency with highest enhancement factor of 1.1 × 108 was noted with sensor prepared at 3000 NLP (PA 3000 NLP). Sensor surface uniformity exhibited greater signal reproducibility with low values of % RSD (7.8). The fabricated flexible SERS sensor (PA 3000 NLP) achieved sensing of the food toxins effectively even in their trace levels of 10 − 10 M for methyl orange (MO) and 10 ppm for Butylated hydroxy anisole (BHA). Mechanism of SERS sensing dominated the electromagnetic enhancement was correlated well with their properties. Since SERS sensing need not require any intricate analyte pre-treatment, the fabricated PA 3000 NLP flexible SERS sensor can find the food toxins in rapid time (< 2 min), projecting a portable platform to conserve food safety.

Patterned Cu Nanoparticle Film for All-Cu Interconnection Without Chemical Mechanical Polishing Pretreatment

All-Cu interconnects with fine pitch scalability and excellent electrical performance are highly considered as the next interconnection node for the coming era of chiplet integration. However, current all-Cu interconnection through Cu-Cu direct bonding relies much on expensive chemical mechanical polishing (CMP) process to reduce surface roughness to several nanometers. Herein, Cu nanoparticle film prepared by pulsed laser deposition (PLD) was successfully patterned into micro bumps of 120 μm pitch and sintered at 160~250 °C to form all-Cu interconnects without using CMP pretreatment. The fabricated bumps had a low Young’s modulus of only 1GPa and could produce vertical collapse of several microns in bonding process, providing compliance with surfaces having high roughness and poor coplanarity. The bonded interconnects also exhibited excellent mechanical quality with shear strength >20 MPa at 160 °C, 15 MPa and >90 MPa at 250 °C, 20 MPa, which was superior to most reported Cu-Cu bonding using patterned nanomaterials. Patterning mechanism in PLD process involving incident characteristic of Cu nanoparticle flux, evolution of bump morphology was investigated and bump morphology’s influence on bonding properties was analyzed in detail. The strategy illustrated here could lead to develop a low-temperature, low-pressure assembly technique with less reliance on CMP for all-Cu interconnection.

High-Entropy Alloy Films

High-entropy alloy films have the same excellent properties as high-entropy alloys and can better realize the practical applications of high-entropy alloys. This paper takes the high-entropy alloy films as the object of discussion. The preparation process, microstructure, hardness, wear resistance and corrosion resistance of high-entropy alloy films are mainly discussed and the influence of nitridation, sputtering power, substrate temperature, substrate bias and other factors on the phase structure of alloy films is analyzed. High-entropy alloy films can be prepared using magnetron sputtering, laser cladding, pulsed laser deposition, detonation spraying, electrochemical deposition and other processes. High-entropy alloy films tend to form a solid solution and amorphous state, and their hardness is far higher than that of traditional films. Among them, the hardness of high-entropy alloy nitride films can reach the standard of superhard films. Wear resistance is usually proportional to hardness. Due to the corrosion-resistant elements and amorphous structure, some high-entropy alloy films have better corrosion resistance than stainless steel. High-entropy alloy films have shown profound development prospects in the fields of wear-resistant coatings for tools, corrosion protection, diffusion barrier and photothermal conversion coatings.