Properties Of Thin Films Research Articles

Study of physical properties of zinc oxide thin films using the hydrothermal method

Zinc oxide (ZnO) is a versatile semiconductor material with unique physical, chemical, and optical properties. It has garnered significant attention in recent years due to its wide applications in electronics, photonics, sensors, and environmental devices. This paper provides a comprehensive review of the fundamental properties of ZnO, its synthesis methods, and the wide range of applications it enables. The focus is on the material’s electronic properties, optical characteristics, and how these features are being leveraged in innovative technologies such as transparent conductors, UV detectors, and gas sensors.

Ferromagnetic and photoluminescence properties of transparent conductive Cd1-xSnxO thin films for light emitting diode applications

Ferromagnetic and photoluminescence properties of transparent conductive Cd1-xSnxO thin films for light emitting diode applications

Effects of ion irradiation induced phase transformations and oxygen vacancies on the leakage current characteristics of HfO2 thin films deposited on GaAs

Abstract We report on the ion-induced phase transformations, defect dynamics related to oxygen vacancies and the resulting leakage current characteristics of RF sputtered HfO2 thin films grown on GaAs. A systematic growth of HfO2 grains and Ion prompted phase transformations of HfO2 to crystalline phases such as monoclinic and tetragonal/orthorhombic (mixed phase) in otherwise amorphous HfO2 thin films have been observed after irradiation. At lower fluences, Ion induced enhancement in the dielectric properties of HfO2 thin films resulted in a reduction in the leakage current, whereas ion prompted defect formation at higher fluences caused a systematic increase in the leakage current density. Further, the effects of Poole-Frenkel (PF) tunneling and Fowler-Nordheim (FN) tunneling on the leakage current have also been investigated. These mechanisms showed the existence of impurities in the as-grown films. Photoluminescence (PL) study suggests the variation in the defect configuration related to O-vacancies and slight shift in the peak positions due to SHI irradiation are responsible for the observed changes in electrical characteristics. This study offers worthwhile information for considering the effects of electronic excitation prompted defect annealing or defect creation on the performance of HfO2/GaAs based photonic and optoelectronic devices, particularly, when such devices are operated in a radiation harsh environment.

Synthesis, Structures and Air-stable N-type Organic Field-effect Transistor (OFET) Properties ofFunctionalized-phenanthrene Conjugated Asymmetric N-heteroacenes.

The development of stable high-performance n-type organic semiconductors for applications in organic field-effect transistors (OFETs) under ambient conditions is desirable but challenging. To address this issue, we here synthesized a series of functionalized-phenanthrene conjugated asymmetric N-heteroacenes, where the phenanthrene moiety was modified by N substitution or Br functionalization at different positions to induce various degrees of asymmetry in their structures. The photophysical and electrochemical properties of these molecules were studied, and their packing patterns were analysed. The OFETs based on these materials were fabricated through simple spin-coating method, and the as-resulted thin films were treated with different conditions. The devices exhibit typical n-type performances under ambient conditions with charge carrier mobilities up to 4.27 × 10-3 cm2V-1s-1. The crystallinities and morphologies of these thin films were studied to investigate the correlations between the device performances and thin-film characteristics. Our study suggests that phenanthrene conjugated N-heteroacenes can be developed as promising air-stable solution-processable n-type semiconducting materials, and Br modification at certain positions of phenanthrene is beneficial in adjusting the thin-film properties for the improvement of OFET performances.

Tuning Electronic and Functional Properties in Defected MoS2 Films by Surface Patterning of Sulphur Atomic Vacancies.

Defects are inherent in transition metal dichalcogenides and significantly affect their chemical and physical properties. In this study, surface defect electrochemical nanopatterning is proposed as a promising method to tune in a controlled manner the electronic and functional properties of defective MoS₂ thin films. Using parallel electrochemical nanolithography, MoS₂ thin films are patterned, creating sulphur vacancy-rich active zones alternated with defect-free regions over a centimetre scale area, with sub-micrometre spatial resolution. The patterned films display tailored optical and electronic properties due to the formation of sulphur vacancy-rich areas. Moreover, the effectiveness of defect nanopatterning in tuning functional properties is demonstrated by studying the electrocatalytic activity for the hydrogen evolution reaction.

Ultrafast Excitonic Transitions in Enantiopure and Racemic Squaraine Thin Films

ABSTRACTWhile chirality is a prevalent character of numerous biological and synthetic organic molecules, its selective absorption of circularly polarized light, known as circular dichroism (CD), is typically small due to intrinsically weak coupling between magnetic and electric dipoles. However, thin films of aggregated, enantiopure prolinol‐derived squaraine molecules (ProSQ‐C16) exhibit an unusually large excitonic CD signal, although the underlying mechanism is not yet known. In this study, we employ steady‐state and ultrafast transient absorption spectroscopy to investigate the nature and dynamics of excitons in aggregates of enantiopure and racemic ProSQ‐C16 thin films. Highly resembling transient responses of enantiopure thin films under excitations at different photon energies strongly indicate that a single type of aggregate dominates the linear optical response, that is, a strong red‐shifted (J‐like) and weak blue‐shifted (H‐like) absorption band. On the other hand, the transient properties of the racemic thin film deviate from this pattern and remain largely ambiguous. The short lifetime of excited states and coherent oscillations present in the dynamics of the transient absorption signal indicate that the early time dynamics are governed by a transition towards a dark intermediate state, which might arise from intermolecular charge transfer with potential contributions from the coupling of excitons to the vibrations. This non‐radiative relaxation pathway explains the unusually weak fluorescence of the predominately J‐like behaving aggregate. Our findings conclusively show that the chiral aggregate structure has a strong impact on the optical and dynamic response of the excitons and underline the significance of non‐Frenkel exciton states for the optical properties of anilino squaraine dyes.

The dielectric characteristics of spray deposited α-Si3N4:ZnO thin films: The nitride effect on frequency-dependent capacitance and conductance profiles

The study focused on the effect of α-Si3N4 doping on the electrical/dielectric properties of ZnO thin films. Both α-Si3N4 doped and additive-free ZnO thin films were coated on p-Si substrates via a spray deposition method to achieve this. The electrical (current density (J)-voltage (V)) and dielectric properties (capacitance (C), conductance (G), dielectric loss (tanδ), reel/imaginary part of dielectric permittivity (ε′ and ε″) and electric modulus (M′ and M″)) were determined for all samples by using dielectric spectroscopy (DS) method. On the other hand, scanning electron microscopy (FESEM) and energy-dispersive spectroscopy (EDS) analysis were performed to evaluate microstructure, X-ray diffraction (XRD) was used to define chemical composition and atomic-force microscopy (AFM) analysis was carried out to characterise the topology of the coating layers. The thickness/surface roughness was obtained as ∼82.5 nm/10.6 nm for undoped and ̴ 99.5 nm/10.4 nm for nitride-doped samples, respectively. The maximum capacitance value (C) was obtained as 275 pF at −3.0V and 200 Hz, and the optimal conductance (G) value was also found as 45 μS around 4.0V and 1 MHz in the nitride-doped sample. The average of α and τ values was calculated as 5.67 × 10−5 s, 0.146 and 4.49 × 10−5 s, 0.081 for nitride-doped and undoped ZnO, respectively. The increase in performance can be attributed to the homogeneous and almost equally-size distribution of the ZnO grain growth which is strongly controlled by α-Si3N4.

Impact of in situ heating on the structure, morphology, and electrical and optical properties of RF-sputtered NiO thin films

Impact of <i>in situ</i> heating on the structure, morphology, and electrical and optical properties of RF-sputtered NiO thin films

Low thickness effect on the properties of Mn-doped ZnO thin films synthesized by sol-gel spin coating technique

In this study, 7% manganese-doped zinc oxide (MZO) thin films with varying low thicknesses were synthesized using the spin coating method. The structural, optical, and morphological properties of MZO films with different film thickness, were systematically investigated. The crystallite structure, superficial morphology, and optical characteristics were analyzed using X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), and ultraviolet–visible spectroscopy (UV-Vis). Structural analysis confirmed that all films exhibit a hexagonal wurtzite phase with a pronounced peak along the c-axis, and slight variation in low thickness significantly affected the structural parameters. The surface morphology demonstrated good uniformity, characterized by rounded grain shapes in the plane, while surface roughness was found to be increased with increasing film thickness. Optical analysis revealed that as the number of coatings increased, both transmittance and band gap energy decreased, accompanied by a redshift in the absorption edge across all samples. This behavior is attributed to light scattering, as well as an increase in the refractive index and dielectric function with visible light energy, influenced by the number of layers and corresponding crystallite size.

Tailoring breakdown strength and energy-storage performance of silicon-integrated lead-free epitaxial BZT thin films through multi-element B-site substitutions

Developing high-temperature dielectric thin films with high-performance energy-storage properties for harsh environment applications has received increased attention. Herein, a multi-element co-doping strategy is proposed to enhance the breakdown strength and energy storage properties of lead-free BaTiO3-based thin films, which were deposited on silicon substrates using pulsed laser deposition. Due to the difference in ionic radii and valence states between the multi-dopants and host Ti-cations, the local lattice distortion and local charged defects are induced, which results in the reduction in the size of polar nanoregions (PNRs) and weakened coupling interactions between these PNRs, thus achieving stronger breakdown strength (EBD). Accordingly, owing to an enhanced EBD of 7.8 MV/cm and a delayed polarization saturation, a superior recoverable energy-storage density (Ur) of 140.8 J/cm3 along with an excellent energy efficiency (η) of 93.2 % were achieved at room temperature in the multi-element doped Ba(Zr0.2Ti0.2Mn0.2Nb0.2Sm0.2)O3 (BZTMNS) thin film. Moreover, the BZTMNS thin film also exhibits an excellent Ur of 102.6 J/cm3, a good η of 86.4 %, and a high EBD of 6.6 MV/cm at an operating temperature of 200 °C. Additionally, a small fluctuation of Ur (-6.1 %) and η (-11.7 %) values can also be observed in BZTMNS thin film in high cycling endurance, up to 1010 cycles, even when operated at an elevated temperature of 200 °C. These findings in the BZTMNS thin film demonstrate a feasible way to design high-temperature capacitors for modern electronic devices for hybrid vehicles and underground oil/gas explorations.

First Principles Study of Bismuth Vacancy Formation in (111)-Strained BiFeO3

Epitaxial strain is known to significantly influence the structural and functional properties of oxide thin films. However, its impact on point defect concentration has been less explored. Due to the challenges in experimentally measuring thin-film stoichiometry, computational studies become crucial. In this work, we use first-principles calculations based on density functional theory to investigate the formation and stability of Bi vacancies and Bi-O vacancy pairs in BiFeO3 (BFO) under (111) epitaxial strain. Our results demonstrate that compressive strain (−4%) decreases the formation enthalpy of Bi vacancies by 0.88 eV, whereas tensile strain (4%) increases it by 0.39 eV. Out-of-plane (OP) Bi-O vacancy pairs exhibit enhanced stability under both compressive and tensile strain, with formation enthalpy reductions of 1.49 eV and 1.05 eV, respectively. In contrast, in-plane (IP) vacancy pairs are stabilized under compressive strain but are insensitive to tensile strain. Finally, we discuss how these findings influence Bi stoichiometry during thin-film growth and the role of local strain fields in the formation of conducting domain walls.

Integrating Theoretical and Experimental Approaches to Unveil the Mechanical Properties of CuSbSe2 Thin Films

Abstract An exhaustive investigation of the mechanical characteristics of CuSbSe2 (CASe) thin films is conducted in this study by combining experimental nanoindentation methods with theoretical simulations. The Ab-initio Molecular Dynamics (AIMD) calculations are performed with the machine learning (ML) force fields. By employing the Vienna Ab-initio Simulation Package (VASP) based on Density Functional Theory (DFT), theoretical inquiries are carried out to identify crucial parameters, such as bonding characteristics, elastic constants, hardness, bulk modulus, shear modulus, Young’s modulus, and Poisson’s ratio. Experimental validation is conducted using nanoindentation to investigate load-dependent hardness and Young’s modulus in a manner that closely matches the theorized predictions. The anomalies between experimental and theoretical outcomes are ascribed to anisotropic behavior and grain boundaries. Furthermore, an investigation is conducted into the directional dependence of sound wave velocities in the CASe films, leading to the revelation of intricate elastic property details. By employing an integrated theoretical-experimental approach, the present attempt not only increases the knowledge concerning CASe films but also fortifies the relationship between theory and experiment, thereby bolstering the dependability of our results. The insights provided as a result of this paper facilitate the development of CASe film applications in a variety of technological fields in the future.&amp;#xD;

Studies on optical properties of Bi2S3 thin films synthesized by two-stage growth process

Studies on optical properties of Bi2S3 thin films synthesized by two-stage growth process

Spraying-Deposited Transparent p-Type Sn-Doped CuI Film and Its Ultrahigh-Speed Self-Powered Photodetector.

The exploitation of simply processed p-type semiconductors and photodetectors with promising optoelectrical properties remains challenging yet essential for current and future advanced optoelectronic applications. Transparent p-type CuI and Sn-doped CuI (Cu-Sn-I) films and their self-powered photodetectors have been successfully fabricated by the spraying method. It is found that the incorporation of Sn dopants enhances the optical, electrical, and photoelectric properties of CuI thin films as well as their corresponding self-powered heterojunction photodetectors. This improvement of the optoelectrical properties of the Cu-Sn-I film and its photodetector can be attributed to the adjustment of the acceptor defect level and increased hole concentration resulting from Sn doping. The Cu-Sn-I/n-Si photodetector exhibits a responsivity of 10.7 mA/W, a detectivity of 6.79 × 1011 Jones, and a response time of 77 μs/30 μs (0 V bias). The response time exhibits the fastest rise and decay times compared with the other CuI-based self-powered UV photodetectors in recent years, showcasing promising applications in the realm of transparent electronics moving forward. This study also presents an effective strategy for enhancing the electrical properties of p-type semiconductors and devices through effective doping.

The enhancement in microstructure, optical and electromagnetic shielding properties of Al-doped Ag thin films by annealing treatment

Ag thin films having attractive optical transmittance and effective shielding capability are usually used as a preferred choice for the transparent electromagnetic shielding windows. Whereas, the Ag films are grown primarily via an island growth (Volmer-Weber) mechanism, which greatly restricts its application. In this study, by introducing Al atoms and suitable annealing treatment, the continuous and smooth Ag thin films are successfully fabricated by magnetron co-sputtering method. The effect of annealing temperature on the microstructure, optical and electromagnetic shielding properties of the films are conducted the comprehensive and profound study. Our results indicate that the 5 mol% Al-Ag thin film annealed at 200 °C could transform into planar growth structure, and display excellent the highest optical transmittance 89.15% at 550 nm. Meanwhile, the shielding effectiveness (SE) reaches a peak value of 28.1 dB. 500°C is estimated as the threshold annealing temperature of Al-Ag thin film with comprehensive performances gradually declining. Moreover, the Al dopants significantly improve the thermal stability of Ag thin films than that of the pure Ag films. These findings are of important guidance for the preparation of high-quality Al-Ag thin films to meet the practical applications.

Effect of molarity on the optical and structural properties of CdS thin films deposited by spray pyrolysis on flexible plastic substrates

Effect of molarity on the optical and structural properties of CdS thin films deposited by spray pyrolysis on flexible plastic substrates

Tuning the optical, electrical, and structural properties of Cu-DLC thin films via simultaneous DC-RF unbalanced magnetron sputtering

This study evaluates the deposition of diamond-like carbon (DLC) films with copper impurities on a glass substrate using simultaneous direct current (DC) and radio frequency (RF) magnetron sputtering. The structural, optical, electrical, and mechanical properties, as well as the surface topography of the films, were investigated under various DC power levels using Raman spectroscopy, ellipsometry, UV-VIS, I-V measurements, nanoindentation, AFM, and FESEM. Results indicate that increasing the DC power to the graphite target from 60 to 120 W, while maintaining a constant 10 W of RF power to the copper target, enhances the optical absorption coefficient of the films and increases the optical bandgap from 0.95 eV to 1.55 eV. Concurrently, the refractive index decreases from 1.84 to 1.64. Raman spectra reveal that the G peak position and the ID/IG ratio decrease, suggesting an increase in sp³ bonds relative to sp2 bonds in the film structure. The surface topography shows increased deposition power raises the surface roughness of the films. Optical emission spectroscopy (OES) during deposition indicates that higher DC power reduces the relative intensity of Cu active species, leading to less Cu embedded in the film structure. Additionally, the emission spectrum shows an increase in hydrogen-containing species, suggesting a rise in sp³ C-H bonds compared to sp³ C-C bonds in the film structure.

Plasma enhanced chemical vapor deposition (PECVD) of SiOx thin films on Portuguese limestone: An experimental study

Plasma Enhanced Chemical Vapor Deposition (PECVD) of SiOx thin films has been applied to the stone surface under laboratory conditions in order to assess its feasibility as an alternative method for stone protection. SiOx thin layers were deposited on oolitic limestone lithologies known to have been used for the construction and restoration of the Batalha Monastery in Portugal surface by PECVD from tetraethoxysilane (TEOS) as the reaction precursor, in capacitively coupled parallel-plate reactor. The thickness, morphologies and chemical properties of the deposited film were characterized by attenuated total reflectance -Fourier transform infrared (ATR-FTIR) spectroscopy and scanning electron microscopy (SEM+EDS). Laboratory simulated decay and natural aging tests were implemented to evaluate the protective effect of the deposited micron-size SiOx thin films. Results suggested that, due to the good barrier effect, SiOx films were able to isolate the stones from aggressive acidic solution, thus reducing possible dissolution-related damage. Natural aging tests proved that SiOx thin films were also able to inhibit to a high extent bio-colonization while, at the same time reducing soiling of the stone appearance. Durability and wetting property of this SiOx thin film were preliminarily assessed. This research tested, for the first time, the feasibility of applying micron-size SiOx film quickly and directly via cold plasma deposition and its versatile protection performance on carbonate stone.

Structural and optical properties of Eu-doped ZnO epitaxial thin films grown by pulsed-laser deposition

Pulsed-laser deposition was utilized to fabricate Eu-doped ZnO epitaxial films on c-plane sapphire substrates with Eu concentrations ranging from 0.5 to 4.0 at. %. The structural properties were analyzed using x-ray diffraction surface normal radial scans and azimuthal cone scans, which confirmed the epitaxy of the film samples. Reciprocal space mapping was performed on ZnO(101̄1) to visualize the effect of Eu incorporation. X-ray fluorescence mapping confirmed the homogeneous distribution of Zn and Eu, and x-ray absorption near-edge structure spectra directly confirmed the trivalent state of Eu ions. The optical properties were assessed using temperature-dependent photoluminescence (PL). Various defects were identified. With increasing Eu dopant concentration, PL emissions from defects and the Eu 4f-intraband transitions gradually became the predominant features in the PL spectra at low temperatures. Furthermore, PL analysis suggested that Eu ions substituted Zn, occupying sites with lower C3v symmetry due to the distortion caused by Eu incorporation.

Investigation of electrochemical properties of Pt-WO3 nanocomposite thin films for supercapacitor applications

Investigation of electrochemical properties of Pt-WO3 nanocomposite thin films for supercapacitor applications