Properties Of Tellurium Research Articles

Effect of Consciousness Energy Healing Treatment on the Metal Profile and Properties of Tellurium

Effect of Consciousness Energy Healing Treatment on the Metal Profile and Properties of Tellurium

A Generalized Crystallographic Description of All Tellurium Nanostructures.

Despite tellurium being less abundant in the Earth's crust than gold, platinum, or rare-earth elements, the number of industrial applications of tellurium has rapidly increased in recent years. However, to date, many properties of tellurium and its associated compounds remain unknown. For example, formation mechanisms of many tellurium nanostructures synthesized so far have not yet been verified, and it is unclear why tellurium can readily transform to other compounds like silver telluride by simply mixing with solutions containing silver ions. This uncertainty appears to be due to previous misunderstandings about the tellurium structure. Here, a new approach to the tellurium structure via synthesized structures is proposed. It is found that the proposed approach applies not only to these structures but to all other tellurium nanostructures. Moreover, some unique tellurium nanostructures whose formation mechanism are, until now, unconfirmed can be explained.

Theoretical analysis of the structural and electronic properties of bcc tellurium under high pressure

Using the full potential linearized augmented plane wave (FP-LAPW) method we present the structural and electronic properties of tellurium in the bcc phase high pressures. Apart from the electronic band structure in the bcc phase, the density of states (DOS) and Fermi energies (E F ) at various pressures are calculated. The equilibrium lattice constant, the phase transition pressure, the bulk modulus and its pressure derivative were found to be in good agreement with experimental. Further, we have also calculated the electronic specific heat coefficient, which decreases with the increase in pressure.

Adsorption and colloidal behavior of traces of hexavalent tellurium in aqueous solutions

The solutions of carrier-free125mTe(VI) have been prepared by oxidizing125mTe(IV) with bromine. Using carrier-free125mTe(VI) as a tracer, the effects of pH, NaCl concentration, and tellurium(VI) concentration on the adsorption and colloidal properties of tellurium(VI) in NaCl solution have been studied. It has been found that traces of tellurium(VI) are adsorbed on filter paper and show colloidal behavior in the basic region. A method has been devised for the separation of carrier-free125mTe from its parent nuclide125Sb, based on the adsorption properties of125mTe(VI) in basic solutions.

Synthesis and properties of tellurium(II) compounds: Diaryltelluroesters, ArCOTeAr′

A series of organotellurium(II) derivatives of the general formula ArCOTeAr′ (Ar,Ar′ = phenyl, p-tolyl, p-anisyl, p-bromophenyl, p-trifluoromethylphenyl, 1-naphtyl) have been prepared and characterized chemically and spectroscopically. Various chemical reactions of this class of compounds have been investigated, and the reaction of these compounds with (PhCN) 2PdCl 2 to give the polymeric (Pd(TeAr′) 2) n derivatives suggests that these organotellurium reagents may be useful precursors of TeAr′ − ligands in reactions with transition-metal substrates.

Effect of selenium on the thermoelectric properties of tellurium

The effect of selenium, in amounts varying up to 3 pct. wt. on the electrical conductivityσ and the thermal emfα of tellurium was studied over a wide temperature range. As a result of this study, these properties of the tellurium -selenium system have been found to follow extremal trends. The alloy containing 0.25% Se has the maximum electrical conductivity and the minimum thermal emf. The true change inα at the melting point is estimated from the crystallization rate of test specimens in a constant electric field.

Interpretation of boundaries in the pressure–temperature diagram for liquid tellurium and their relationship to the melting‐curve maximum

AbstractResearch on liquid tellurium is reviewed and interpreted in an effort to obtain a consistent picture of the effect of pressure and temperature on the structure and properties of tellurium in the liquid state. Electrical resistance experiments on liquid tellurium support the existence of reaction boundaries in the p–T diagram. The boundaries are believed to identify stages in the reaction whereby the 2‐coordinate covalent chain structure transforms to a 3‐coordinate covalent network structure which eventually dissociates with pressure and temperature into a metallic system. The increasing liquid density associated with the molecular reaction is given as the cause of the maximum on the P–T melting curve. The melting curve maximum in tellurium is shown to be related to maxima in selenium and sulfur. Quenching tellurium from different liquid fields, delineated by reaction boundaries, resulted in materials with different x‐ray spectra.

Galvanomagnetic properties of tellurium between 0.35 and 4.2 K

Galvanomagnetic properties of tellurium between 0.35 and 4.2 K

Migration and incorporation of tellurium in CdS

AbstractThe diffusion (D) and solubility (S) properties of tellurium in CdS are investigated by means of the vapour pressure method. The concentration profiles measured by special microtome and by tracer techniques consist of two parts in most cases: the first is attributed to bulk diffusion and the second is assumed to be caused by dislocations. The first region of profiles shows usual erfc‐behaviour only under sulfur pressure annealings, and only for this case the pressure dependences of D and S have been determined simultaneously and quantitatively. The van Gool exponents found experimentally are compared with values estimated on the basis of a simple dissociative diffusion model and good agreement is obtained.

Effect of tin impurities on the physical properties of tellurium

Effect of tin impurities on the physical properties of tellurium

Theoretical interpretation of the optical and electrical properties of tellurium, selenium and their alloys

In an earlier paper [1] the energy band spectra of the metal electrons of selenium and tellurium have been determined with the aid of quantum chemical considerations. Based on these energy band spectra the present paper is concerned with the theoretical interpretation of the dependence of the infrared absorption spectrum of tellurium on the polarization of incident radiation, the soft X-ray absorption spectrum of selenium and tellurium, the anisotropy of electrical conductivity and the anomalous variation of the Hall coefficient of tellurium with temperature.