Due to the synergistic effect of the rapid transfer of photo-generated electrons and enrichment of reactive active sites, reasonably assembling dual cocatalysts with semiconductor is considered as an excellent method to enhance the photocatalytic properties of semiconductors. Herein, earth-abundant Co9S8 and Ni2P dual cocatalysts modified-ZnIn2S4 (ZIS/CS/NP) composite photocatalyst has been constructed by the low-temperature solvothermal and in-situ photodeposition methods. A series of characterizations indicate the hollow structure of Co9S8 can reduce the charge transfer distance and enhance the migration of photo-generated electrons, while Ni2P acts as an electron collector and provides sufficient active sites for H2 release in this dual cocatalysts system. Because of the synergistic effect of dual cocatalysts, ZIS/CS/NP composites exhibit superior activity in the photocatalytic H2 production compared to blank ZIS, ZIS/CS and ZIS/NP. Notably, the optimal photocatalytic H2 production rate of ZIS/CS/NP reaches 6823.64 μmol g−1 h−1, which is approximately 86 times higher that of blank ZIS. This work is expected to provide useful reference for the construction of high-performance dual-cocatalyst modified semiconductor composite for photocatalytic H2 evolution.