Pulsed Laser Deposition Process Research Articles

The use of He buffer gas for moderating the plume kinetic energy during Nd:YAG-PLD growth of EuxY2−xO3 phosphor films

We have investigated the He buffer gas process of moderating the kinetic energy of the pulsed laser deposition (PLD) plume during EuxY2−xO3 phosphor film growth. When using a neodymium yttrium aluminum garnet laser for PLD thin film growth, the kinetic energy of the ablation plumes can be high enough to cause the formation of point defects in the film. The buffer gas pressure is an important process parameter in PLD film growth. We find that the presence of the He buffer gas reduces the kinetic energy of the laser deposition plume through many low-angle collisions in the gas phase by a factor of 7 without reducing the deposition rate. This is because He is much lighter than any of the elements in the plume and it does not affect the composition of the oxide films. Consequently, the resputtering of the Y2O3 film surface by the plume was significantly suppressed in the presence of the He gas moderator, leading to a decrease of the defect density in the Y2O3 films. The improvement of the film quality was verified by a systematic analysis of time-resolved photoluminescence (PL) data for EuxY2−xO3 composition–gradient films. The PL lifetime and intensity of Eu0.2Y1.8O3, which shows the highest PL intensity, increased by 13.3% and 36.4%, respectively, when the He gas moderation process was used. The He buffer gas process is applicable to the PLD growth of the other oxide materials as well, where the reduction of the kinetic energy of the plume would bring the PLD process closer to the molecular beam epitaxy growth condition.

Optimization of Laser-Wavelength Dependence for Open-Air Atmospheric Pressure Pulsed Laser Deposition of AlCrFeMnTi High-Entropy Alloy for Tailored Surface Properties.

High-entropy alloys (HEAs) have garnered significant attention in different fields due to their exceptional mechanical and physical properties, making them promising candidates for various applications. Several techniques, including physical vapor deposition and pulsed laser deposition (PLD), have been employed for the fabrication of HEA thin films. In this study, we explore a novel approach to synthesizing the lightweight HEA (LWHEA) AlCrFeMnTi using PLD in air at atmospheric pressure with a particular focus on the influence of the laser wavelength on the deposition process and the resulting alloy characteristics. This research investigates the impact of different laser wavelengths on the LWHEA's characterization and the optimization of laser wavelength dependence in air at atmospheric pressure PLD of LWHEA AlCrFeMnTi for tailored surface properties such as phase composition, microstructure, and corrosion resistance. Systematically varying the laser wavelength was attempted to optimize the deposition conditions. This was aimed at achieving enhanced properties and precise control over the alloy's composition. This work contributes to a deeper understanding of the open air PLD process for LWHEAs and sheds light on the role of the laser wavelength in tailoring their properties, which can have significant implications for the development of advanced materials for aerospace, automotive, and other high-performance applications. Ultimately, this research aims to provide valuable insights into the design and fabrication of LWHEAs with tailored properties through laser-based deposition techniques.

Femtosecond Laser Irradiation to Zirconia Prior to Calcium Phosphate Coating Enhances Osteointegration of Zirconia in Rabbits.

Calcium phosphate (CaP) coating of zirconia and zirconia-based implants is challenging, due to their chemical instability and susceptibility to thermal and mechanical impacts. A 3 mol% yttrium-stabilized tetragonal zirconia polycrystal was subjected to femtosecond laser (FsL) irradiation to form micro- and submicron surface architectures, prior to CaP coating using pulsed laser deposition (PLD) and low-temperature solution processing. Untreated zirconia, CaP-coated zirconia, and FsL-irradiated and CaP-coated zirconia were implanted in proximal tibial metaphyses of male Japanese white rabbits for four weeks. Radiographical analysis, push-out test, alizarin red staining, and histomorphometric analysis demonstrated a much improved bone-bonding ability of FsL-irradiated and CaP-coated zirconia over CaP-coated zirconia without FsL irradiation and untreated zirconia. The failure strength of the FsL-irradiated and CaP-coated zirconia in the push-out test was 6.2-13.1-times higher than that of the CaP-coated zirconia without FsL irradiation and untreated zirconia. Moreover, the adhesion strength between the bone and FsL-irradiated and CaP-coated zirconia was as high as that inducing host bone fracture in the push-out tests. The increased bone-bonding ability was attributed to the micro-/submicron surface architectures that enhanced osteoblastic differentiation and mechanical interlocking, leading to improved osteointegration. FsL irradiation followed by CaP coating could be useful for improving the osteointegration of cement-less zirconia-based joints and zirconia dental implants.

Control of growth kinetics during remote epitaxy of complex oxides on graphene by pulsed laser deposition

Remote epitaxy through 2D materials opens new opportunities for research and application, overcoming some limitations of classical epitaxy and allowing the creation of freestanding layers. However, using graphene as a 2D interlayer for remote epitaxy of metal oxides is challenging, particularly when carried out by pulsed laser deposition (PLD). The graphene layer can be easily oxidized under the typically applied high oxygen pressures, and the impact of highly kinetic particles of the plasma plume can lead to severe damages. In this study, both aspects are addressed: Argon is introduced as an inert background gas in order to avoid oxidation and to reduce the kinetic impact of the plasma species on graphene. The laser spot size is minimized to control the plasma plume and particle flux. As a model system, strontium titanate (STO) is quasi-homoepitaxially grown on graphene buffered STO single crystals. Raman spectroscopy is performed to evaluate the 2D, G, and D band fingerprints of the graphene layer and to assess the defect structure of the interlayer after the deposition. Our results prove that control of the growth kinetics by reducing the laser spot size and by using high argon pressures provides a key strategy to conserve graphene with a low defect density during PLD while allowing a layer-by-layer growth of structurally coherent oxide layers. This strategy may be generalized for the PLD remote epitaxy of many complex oxides, opening the way for integrating 2D materials with complex oxides using widely accessible PLD processes.

Micro-structural and optical properties of diamond-like carbon films grown by magnetic field-assisted laser deposition

Inhomogeneous magnetic field is introduced into pulsed laser deposition process, in order to find new properties of diamond-like carbon film grown under magnetic field, thereby offering the theoretical and experimental basis for further enhancing sp<sup>3</sup>-bond content in this film. Distribution of the magnetic strength and flux lines induced by a rectangular permanent magnet is calculated. And then, flying trace of the carbon ions in the magnetic field is also simulated by the iterative method, which indicates that the carbon ions cannot expand freely and they are confined and accumulate around the center region of the magnet source. Beside the surface interference, the measurement and the fitted results of ellipsometry parameters show that magnetic field exerts an important influence on layer-thickness distribution and optical constant of the pulsed laser deposition-grown diamond-like carbon film. Meanwhile, it is indicated that the inhomogeneity of the layer-thickness distribution and optical constant increase when the magnetic strength is higher. Micro-structure of diamond-like carbon film is affected seriously by magnetic field, which is indicated by Raman spectra. Magnetic field can enhance the local stress in the carbon matrix net, increasing the sp<sup>3</sup>-bond content. Theoretical research and experimental research both show that a suitable magnetic strength can excite micro-structure of diamond-like carbon film significantly, and the high-quality diamond-like carbon coating with practical application value will be obtained by technological adjustment.

Automated extraction of synthesis parameters of pulsed laser-deposited materials from scientific literature

An efficient data-driven literature-based discovery approach is utilized, that is capable of extracting knowledge from materials science-related text, related to Pulsed Laser Deposition (PLD), aiming to extract various processing parameters that are critical during the PLD process.

Improved solar cell efficiency of titanium dioxide on porous silicon using pulsed laser deposition at different laser wavelengths

In this study, a Q-switched Nd:YAG laser with specific parameters, including a pulse repetition rate of 6 Hz, a pulse duration of 10 nm, a wavelength of 532 nm, and a laser fluence of 237.47 J cm−12, was employed to fabricate highly crystalline TiO2 nano-films. These nano-films exhibited a narrow energy band gap of 3.24 eV and showcased favorable surface morphology, characterized by a roughness of 2.38 nm. A solar cell device was produced by creating porous silicon (PSi) and applying titanium dioxide films onto the PSi, achieving a notable conversion efficiency of 8.733%. To investigate the impact of different parameters on the resulting TiO2 nano-films, a range of laser fluences (ranging from 131.93 to 263.85 J cm−12) and three distinct laser wavelengths (1064 nm, 532 nm, and 355 nm) were employed during the pulsed laser deposition (PLD) process. These experiments aimed to grow TiO2 films on both quartz and silicon (Si) substrates.

All-inorganic flexible epitaxial SrNbO3/mica thin films with ultrahigh figure of merit as indium-free transparent conductors

Nowadays, flexible transparent conductors (TCs) have been widely applied for solar cells, stretchable integrated circuits, sensor networks, and human-machine interaction devices. Recently, nondoped correlated metallic oxides (CMOs) have aroused great interest as indium-free TCs. In this work, an all-inorganic flexible CMO thin film with an ultrahigh figure of merit (FOM) value was fabricated using a simple preparation technology: the direct deposition of epitaxial SrNbO3 thin films on a stratiform mica substrate via a pulsed laser deposition (PLD) process. From the measured optical transmittance (Tr) spectra in conjunction with the ellipsometic data, it is found that SrNbO3 film possesses a superior visible light transparency compared with commonly investigated SrVO3 due to its larger bandgap. The charge transport measurements indicate that the dc electrical conductivity (σ) of SrNbO3 is higher than that of SrVO3, attributed presumably to a weaker electron correlation and therefore a smaller effective electron mass (m*) in SrNbO3. Bending cyclic tests reveals high mechanical durability and bending stability in SrNbO3 films. This detailed investigation demonstrates a great potential of the all-inorganic flexible epitaxial SrNbO3/mica film as an indium-free TC with high performance for future optoelectronic applications.

Design, fabrication and measurement of metal-semiconductor field effect transistor based on zinc oxide material

The paper mainly focuses on the design, fabrication and measurement on Zinc Oxide (ZnO)-based Metal-Semiconductor Field Effect Transistor. The research problem in this study is difficulty on observing the electronic properties of ZnO materials to fabricate the high performance transistor design with non-toxic semiconductor materials. Even though the wide band gap materials of Group III and V possess high performance properties for fabricating the power electronics devices, the harmful impacts could not be reduced. The research solution for the problem statement in this study is emphasized on the non-toxic materials of Group II and VI-based high performance power electronics devices fabrication. The experimental studies of the device fabrication were conducted by Pulse Laser Deposition (PLD) process in standard laboratory. The step-by-step procedures for MSFET device fabrication were discussed and the confirmation of developed device fabrication was completed. The approaches on all measurement were completed based on band diagram condition, quantum interference on metal-semiconductor materials, and current-voltage characteristics. The step by step measurement for fabricated device for the proposed structure could be confirmed by standard measurement techniques. The proposed design has been validated for the utilization of high performance applications. The physical properties and physical characteristics for measurement results were confirmed by the theoretical analyses. The numerical analyses have been completed with the help of MATLAB. All results have been proved by recent research works.

Phase transition from SrRuO3 to Sr3Ru2O7 by tuning oxygen pressure at low processing temperature

The epitaxial growth of Sr3Ru2O7 thin films in the Ruddlesden-Popper type remains a challenge as the growth temperature required for a typical pulsed laser deposition (PLD) process can be as high as 1100 °C. In this study, high quality Sr3Ru2O7 epitaxial thin films were obtained using PLD with a single SrRuO3 target. By adjusting the oxygen partial pressure, the structure underwent a phase transition from SrRuO3 to Sr3Ru2O7 facilitated by the formation and development of oxygen and ruthenium vacancies. Remarkably, for the first time, high-quality Sr3Ru2O7 thin films with good crystalline quality were successfully grown at a low temperature of 680 °C on SrTiO3 substrates.

Wafer-Scale Synthesis of 2D Materials by an Amorphous Phase-Mediated Crystallization Approach.

The interest in the wafer-scale growth of two-dimensional (2D) materials, including transition metal dichalcogenides (TMDCs), has been rising for transitioning from lab-scale devices to commercial-scale systems. Among various synthesis techniques, physical vapor deposition, such as pulsed laser deposition (PLD), has shown promise for the wafer-scale growth of 2D materials. However, due to the high volatility of chalcogen atoms (e.g., S and Se), films deposited by PLD usually suffer from a lack of stoichiometry and chalcogen deficiency. To mitigate this issue, excess chalcogen is necessary during the deposition, which results in problems like uniformity or not being repeatable. This study demonstrates a condensed-phase or amorphous phase-mediated crystallization (APMC) approach for the wafer-scale synthesis of 2D materials. This method uses a room-temperature PLD process for the deposition and formation of amorphous precursors with controlled thicknesses, followed by a post-deposition crystallization process to convert the amorphous materials to crystalline structures. This approach maintains the stoichiometry of the deposited materials throughout the deposition and crystallization process and enables the large-scale synthesis of crystalline 2D materials (e.g., MoS2 and WSe2) on Si/SiO2 substrates, which is critical for future wafer-scale electronics. We show that the thickness of the layers can be digitally controlled by the number of laser pulses during the PLD phase. Optical spectroscopy is used to monitor the crystallization dynamics of amorphous layers as a function of annealing temperature. The crystalline quality, domain sizes, and the number of layers were explored using nanoscale and atomistic characterization (e.g., AFM, STEM, and EDS) along with electrical characterization to explore process-structure-performance relationships. This growth technique is a promising method that could potentially be adopted in conventional semiconductor industries for wafer-scale manufacturing of next-generation electronic and optoelectronic devices.

Influence of pulsed laser scanning patterns on microstructural evolution and mechanical properties of Inconel 718 in direct laser deposition

The mechanical properties of direct laser deposition (DLD) parts are crucial for engineering applications, which are determined by the microstructure and texture. To achieve fine microstructure and higher mechanical performance, pulsed laser deposition is used to generate less heat accumulation and a higher cooling rate. However, the relationship between microstructure and thermal history is difficult to investigate due to the transient temperature change. In this work, a three-dimensional numerical model is developed to study the thermal behavior of the molten pool in the continuous laser deposition (CLD), the continuous pulsed laser deposition (CPLD), and the interval pulsed laser deposition (IPLD) processes. The microstructure of the deposition samples is investigated by optical microscope and electron back-scattered diffraction. The mechanical response of the deposition samples is investigated by tensile test and microhardness test. Compared with the CLD, CPLD, and IPLD result in higher temperature gradient and cooling rate, long columnar grains, and a strong fiber texture. However, grains with larger sizes and a texture with a herringbone pattern due to the change of heat flow are obtained in CLD samples. The test values of IPLD samples show higher tensile strength, higher yield strength, lower ductility, and higher hardness values. This research brings about a perspective for studying the thermal effects of deposition layers and a novelty deposition process to obtain specific microstructures and better mechanical properties.

Trace-level sensing of food toxins by flexible and cost-effective SERS sensors fabricated by pulsed-laser-deposition of gold nanoparticles on polycarbonate matrix

In viewpoint of rapid onsite screening of food contaminants, flexible surface enhanced Raman spectroscopy (SERS) sensors are developed by pulsed laser deposition process (PLD) with plasmonic gold nanoparticles (AuNPs) on the polycarbonate (PC) polymer matrix in the current study. PC/AuNPs with varying laser ablation pulses (200 NLP to 5000 NLP) tailored the morphological, structural and optical properties with their size and shape confinements. SERS properties of the prepared flexible PC/AuNPs sensors were optimized with Raman probe dye Rhodamine 6 G (R6G). Exorbitant SERS efficiency with highest enhancement factor of 1.1 × 108 was noted with sensor prepared at 3000 NLP (PA 3000 NLP). Sensor surface uniformity exhibited greater signal reproducibility with low values of % RSD (7.8). The fabricated flexible SERS sensor (PA 3000 NLP) achieved sensing of the food toxins effectively even in their trace levels of 10 − 10 M for methyl orange (MO) and 10 ppm for Butylated hydroxy anisole (BHA). Mechanism of SERS sensing dominated the electromagnetic enhancement was correlated well with their properties. Since SERS sensing need not require any intricate analyte pre-treatment, the fabricated PA 3000 NLP flexible SERS sensor can find the food toxins in rapid time (< 2 min), projecting a portable platform to conserve food safety.

Patterned Cu Nanoparticle Film for All-Cu Interconnection Without Chemical Mechanical Polishing Pretreatment

All-Cu interconnects with fine pitch scalability and excellent electrical performance are highly considered as the next interconnection node for the coming era of chiplet integration. However, current all-Cu interconnection through Cu-Cu direct bonding relies much on expensive chemical mechanical polishing (CMP) process to reduce surface roughness to several nanometers. Herein, Cu nanoparticle film prepared by pulsed laser deposition (PLD) was successfully patterned into micro bumps of 120 μm pitch and sintered at 160~250 °C to form all-Cu interconnects without using CMP pretreatment. The fabricated bumps had a low Young’s modulus of only 1GPa and could produce vertical collapse of several microns in bonding process, providing compliance with surfaces having high roughness and poor coplanarity. The bonded interconnects also exhibited excellent mechanical quality with shear strength >20 MPa at 160 °C, 15 MPa and >90 MPa at 250 °C, 20 MPa, which was superior to most reported Cu-Cu bonding using patterned nanomaterials. Patterning mechanism in PLD process involving incident characteristic of Cu nanoparticle flux, evolution of bump morphology was investigated and bump morphology’s influence on bonding properties was analyzed in detail. The strategy illustrated here could lead to develop a low-temperature, low-pressure assembly technique with less reliance on CMP for all-Cu interconnection.

High-Entropy Alloy Films

High-entropy alloy films have the same excellent properties as high-entropy alloys and can better realize the practical applications of high-entropy alloys. This paper takes the high-entropy alloy films as the object of discussion. The preparation process, microstructure, hardness, wear resistance and corrosion resistance of high-entropy alloy films are mainly discussed and the influence of nitridation, sputtering power, substrate temperature, substrate bias and other factors on the phase structure of alloy films is analyzed. High-entropy alloy films can be prepared using magnetron sputtering, laser cladding, pulsed laser deposition, detonation spraying, electrochemical deposition and other processes. High-entropy alloy films tend to form a solid solution and amorphous state, and their hardness is far higher than that of traditional films. Among them, the hardness of high-entropy alloy nitride films can reach the standard of superhard films. Wear resistance is usually proportional to hardness. Due to the corrosion-resistant elements and amorphous structure, some high-entropy alloy films have better corrosion resistance than stainless steel. High-entropy alloy films have shown profound development prospects in the fields of wear-resistant coatings for tools, corrosion protection, diffusion barrier and photothermal conversion coatings.

Synthesis and characterization of dense, rare-earth based high entropy fluorite thin films

High entropy oxides (HEOs) with 5 or more cations in equimolar proportions that result in a phase-pure material, are a new class of materials attracting a lot of attention in recent years. HEOs exhibit interesting optical, electrochemical, magnetic and catalytic properties. To get a comprehensive understanding of the physics behind the complex interactions taking place in these materials, it is important to evaluate the material in (near-fully) dense forms, such as pellets or thin films. The fluorite structured high entropy oxide, (CeLaSmPrY)O2−x has been investigated only in the powder form and there are no studies on the dense form of fluorite (CeLaSmPrY)O2−x. One of the main reasons is that (CeLaSmPrY)O2−x undergoes a structural transition from fluorite to bixbyite (at 1000 °C) and typically temperatures above the transition (>1200 °C) are required for achieving high densities via conventional sintering. In this study, we synthesize dense films of fluorite structured (CeLaSmPrY)O2−x by sol-gel as well as pulsed laser deposition processes. The films synthesized via sol-gel process exhibit equiaxed grains and polycrystalline morphology, whereas columnar and epitaxial films are obtained using pulsed laser deposition. Thus, microstructural tuning of dense fluorite (CeLaSmPrY)O2−x films has been demonstrated while maintaining the basic characteristics of the HEO as observed in the powder form, therefore, paving the way towards more comprehensive studies for possible applications.

Composition tuning of Mg/Ir ratio and crystallization of a spinel-related structure in Mg-Ir-O films by pulsed-laser deposition

Pulsed-laser deposition is one of widely used methods to fabricate complex oxide thin films. In pulsed-laser deposition processes, composition of films is regulated by balance of supply and re-evaporation via various conditions such as laser pulses for target ablation, composition of target, substrate temperature, and oxidizing atmosphere. In this study, we report an experimental scheme to tune Mg/Ir composition ratio in Mg-Ir-O films fabricated by pulsed-laser deposition. In contrast to usual situations of oxide films, it was difficult to attain the composition of Mg/Ir ∼ 1 in the Mg-Ir-O films by ablating a target of Mg/Ir ∼ 1. By examining three targets with different Mg/Ir ratios, various laser fluences, substrate temperature, and oxygen partial pressure, a wide range of Mg/Ir composition ratio was regulated in the Mg-Ir-O thin films. We discovered a spinel-related crystalline phase in the Mg-Ir-O films controlled in Mg-rich compositions.

Epitaxial growth of high-quality yttria-stabilized zirconia films with uniform thickness on silicon by the combination of PLD and RF sputtering

High-quality (100)-oriented yttria-stabilized zirconia (YSZ) films with uniform thickness were epitaxially grown on silicon substrates by a two-step process of pulsed laser deposition (PLD) and radio-frequency magnetron sputtering (RFS). First, we fabricated a YSZ-seed layer on (001)-oriented silicon substrates using a PLD apparatus, and then transferred the YSZ-seed substrate to an RFS equipment to complete the growth of a thicker YSZ film. The dependence of YSZ crystal quality on RFS-growth temperature was investigated in the range of 200 to 850 °C. All the resulting YSZ films exhibited pure (100) orientation, and the full width at half maximum of the YSZ (200) X-ray rocking curve was as low as 0.64° for the YSZ film grown at 850 °C, and increased to 1.02° with the RFS-growth temperature declining to 200 °C. The results evidenced that the YSZ film can be epitaxially grown at 200 °C in the presence of a YSZ-seed layer. However, the splitting of the YSZ (200) X-ray diffraction peak appeared at 500 °C and 200 °C, which may be attributed to a transformation of the intrinsic stress in the YSZ films from compressive to tensile stress with decreasing temperature. In addition, the YSZ film had a uniform thickness distribution with an inhomogeneity of less than 5 % and a very flat and dense surface with root-mean-square surface roughness below 1 nm.

Realization of Conductive n‐Type Doped α‐Ga2O3 on m‐Plane Sapphire Grown by a Two‐Step Pulsed Laser Deposition Process

Structural and electrical properties of undoped and doped α‐Ga2O3 thin films grown by pulsed laser deposition on m‐plane sapphire in a two‐step process are presented. A buffer layer of undoped α‐Ga2O3 is introduced below the electrically active thin film to improve the crystal quality and enable the stabilization of the α‐phase at lower substrate temperatures for sufficient dopant incorporation. Donor doping of the active layers with tin, germanium, and silicon, respectively, is realized below a critical substrate temperature of 600 °C. Depth‐resolved X‐ray photoelectron spectroscopy measurements on tin‐doped samples reveal a lower amount of tin in the bulk thin film compared to the surface and a lower tin incorporation for higher substrate temperatures, indicating desorption or float‐up processes that determine the dopant incorporation. Electron mobilities as high as 17 cm2 V−1 s−1 (at ) and 37 cm2 V−1 s−1 (at ) are achieved for tin‐ and germanium doping, respectively. Further, a narrow window of suitable annealing temperature from 680 to 700 K for obtaining ohmic Ti/Al/Au layer stacks is identified. For higher annealing temperatures, a deterioration of the electrical properties of the thin films is observed suggesting the need for developing low temperature contacting procedures for α‐Ga2O3‐based devices.

Hexagonal RFeO3 (R = Dy, Er, and Lu) Films Grown on Glass Substrates with Both Magnetic and Ferroelectric Orders

Hexagonal rare-earth ferrites (h-RFeO3) are promising multiferroic materials owing to the spontaneous magnetization, high ferroelectric transition temperature, and fascinating features provided by strong magnetoelectric coupling. However, h-RFeO3 is metastable, and its synthetic methods are limited, particularly when ionic size of R is large. One of useful synthesis methods is epitaxial thin-film growth on single-crystal substrates, because the metastable phase is stabilized by the lattice match between h-RFeO3 and the substrate. Compared to single-crystal substrates, glass substrates are more cost-effective. However, films on glass tend to consist of a thermodynamically stable phase owing to the amorphous nature of glass substrates. Herein, we report that a h-RFeO3 pure phase can be obtained as thin film even on glass substrates. The metastable phase was formed owing to the nonequilibrium synthesis process of pulsed laser deposition. The obtained h-RFeO3 thin films on glass with R = Dy, Er, and Lu exhibited weak ferromagnetism with Néel temperatures of 120–140 K. Furthermore, a clear magnetic phase transition from weak ferromagnetic to antiferromagnetic phase was observed in the h-ErFeO3 films. Additionally, piezoelectric force microscopy measurements exhibited the ferroelectricity of the film at room temperature. These results provide a convenient synthesis method of a pure phase multiferroic h-RFeO3 system.