The attempt to search for novel materials for optoelectronics material has become a highly debated and intensively investigated field of study. Within the scope of this investigation, Sn0.94Ag0.06-xMgxO2 (0 ≤ x ≤ 0.06) polycrystalline samples were produced using the traditional solid–state reaction method, and their crystalline structure, micro–structure, Raman spectroscopy, optical, and transport characteristics were investigated. Confirmation of a single rutile phase with a tetragonal crystal structure through XRD (X–ray diffraction) analysis is revealed. The morphology study by scanning electron microscopy indicated the formation of nanometric grains. All elements are evenly distributed throughout the structure, as seen by the elemental color mapping. The successful incorporation of Mg/Ag to the SnO2 lattice is evidenced by two prominent peaks in the Raman spectra of these compounds, with wavenumbers of 634 and 775 cm−1, which correspond to the A1g and B2g Raman modes, respectively. The UV–Vis spectrophotometer facilitated the acquisition of absorbance and transmittance data, which revealed that the optical band gap exhibited an expansion when the quantity of Mg/Ag co–doping increased in the SnO2 material. The transmittance value was also shown to increase from 80 % to 90 % with increased Mg co–doping concentration. The Maxwell–Weigner model has been employed to fully understand how the dielectric constant (εr), loss tangent (tan δ), complex impedance, and ac conductivity of Mg/Ag co–doped SnO2 compounds behave depending on frequency. The current–voltage (I–V) characteristics of the sample were measured using a Keithley 6517b electrometer in two–probe mode with a Tin metal pressure contact. The properties of I–V exhibited an Ohmic behavior. A study on the room temperature resistivity reveled that the materials are highly resistive in the nature.
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