The recent advances in micromanufacturing have been pushing boundaries of the new generation of semiconductor devices, which, in the meantime, brings new challenges in the material and structural characterization – a key step to ensure the device quality through the micromanufacturing process. An ultrafast laser-enable optoacoustic characterization methodology is developed, targeting in situ calibration and delineation of the three-dimensional (3-D), nanoscopic interior features of opaque semiconductor chips. With the guidance of ultrafast electron–phonon coupling effect and velocity-perturbated optical interference, a femtosecond-laser pump–probe set-up based on Sagnac interferometer is configured to generate and acquire picosecond ultrasonic bulk waves (P-UBWs) traversing the microchips. The interior features of the microchips shift the phase of acquired P-UBW signals, reflected in the perturbed probe laser beam. The phase shifts are calibrated to compute signal correlation of P-UBW signals between different acquiring positions, whereby to delineate the interior features in an intuitive manner. The approach is experimentally validated by characterizing nanoscopic, invisible interior aurum(Au)-gratings with periodically varied depths in typical microchips. Results highlight that the 3-D nanoscopic features of the microchips can be revealed with a microscopic and a nanoscopic spatial resolution, respectively along the transverse and depth directions of the chip, where the Au-gratings become “visible” with a depth variance of a few tens of nanometers only. This proposed approach has provided a fast, nondestructive approach to “see” through an opaque microchip with a nanoscopic resolution.
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