Printing Of Semiconductors Research Articles

Strategy for Selective Printing of Gate Insulators Customized for Practical Application in Organic Integrated Devices.

Direct drawing techniques have contributed to the ease of patterning soft electronic materials, which are the building blocks of analog and digital integrated circuits. In parallel with the printing of semiconductors and electrodes, selective deposition of gate insulators (GI) is an equally important factor in simplifying the fabrication of integrated devices, such as NAND and NOR gates, and memory devices. This study demonstrates the fabrication of six types of printed GI layers (high/low-k polymer and organic-inorganic hybrid material), which are utilized as GIs in organic field-effect transistors (OFETs), using the electrostatic-force-assisted dispensing printing technique. The selective printing of GIs on the gate electrodes enables us to develop practical integrated devices that go beyond unit OFET devices, exhibiting robust switching performances, non-destructive operations, and high gain values. Moreover, the flexible integrated devices fabricated using this technique exhibit excellent operational behavior. Therefore, this facile fabrication technique can pave a new path for the production of practical integrated device arrays for next-generation devices.

Complex shapes from chemical lithography

3D Lithography Lithographic printing of semi-conductors builds up complex patterns one layer at a time. The process involves multiple steps to mask, print, and etch each layer. Luo et al. tweaked the same process used to grow silicon nanowires to pattern them into complex three-dimensional (3D) shapes. Gold acted as a catalyst to grow and elongate silicon nanowires from the vapor phase. Varying the pressure of the growth process altered the rate of gold diffusion along the surface of the wire. Upon etching the wires, the non-uniform coating of gold acted as a lithographic mask. The authors were thus able to make complex-shaped silicon spicules with a series of ridges and notches by strictly chemical means. Science , this issue p. [1451][1] [1]: /lookup/doi/10.1126/science.1257278

A Printed and Flexible Field‐Effect Transistor Device with Nanoscale Zinc Oxide as Active Semiconductor Material

A family of single-source precursors for low temperature processing of uniform, transparent, and adherent ZnO thin films on various substrates is studied. They decompose cleanly under very mild processing conditions of 150 °C. The resulting ZnO thin films exhibit promising semiconducting properties when printed in a field-effect transistor (FET) device structure. This class of precursor compounds is compatible with existing printing technologies and allows printing of semiconductors on flexible polymer substrates under mild conditions.

Effective Jet Printing of Organic Semiconducting Polymers

AbstractOrganic semiconducting polymers are an attractive alternative to conventional inorganic materials because of the ability to process the polymers from solution and apply them to flexible substrates using lower temperatures and at a lower cost. Direct writing of these materials has the potential to reduce processing steps and material waste. While printing of semiconductors for organic light emitting diodes (OLEDs) is well known, little has been reported on printing semiconductors for organic thin-film transistors (OTFTs). We have developed a process to fabricate TFTs and arrays using jet printing to eliminate all photolithographic patterning. Active layers of the polymeric semiconductor are jet-printed for the active layer. Many factors are found to affect the characteristics of devices having a jet-printed semiconductor layer, including the substrate temperature, surface energy, device geometry, and drop size and overlap. We will discuss the printing conditions that lead to performance similar to that of devices fabricated by spin coating.