Principles Calculations Research Articles

Magnetic injection of α-CP nanoribbons and investigation of spintronic device applications of magnetic α-CP nanoribbons based on first principles calculations

Since the successful synthesis of α-phosphorus carbide (α-CP) using carbon doping technology, α-CP has exhibited excellent carrier mobility and anisotropy at room temperature, underscoring its potential for spintronic applications. The application of CP in spintronic devices is limited due to its lack of magnetism. Effective magnetic injection in non-magnetic semiconductors can typically be achieved by doping with magnetic atoms. In this study, we calculated the electromagnetic properties of transition metal (TM) atoms adsorbed at different positions on α-CP using first principles. Notably, we found that α-CP nanoribbons adsorbed with Fe and Mn atoms of a specific width exhibit stable half-metallicity. We discovered that α-CP nanoribbons adsorbed with Fe and Mn atoms of a specific width exhibit stable half-metal properties and design magnetic tunnel junctions with half-metallic Fe_H12 and Mn_H12 adsorption structures. The results show that Mn_H12 and Fe_H12 devices exhibit a highly efficient spin filtering effect, with a TMR as high as 5521%. These findings provide theoretical guidance for the application of CP-based spintronic devices.

Unraveling the atomic structure evolution of titanium nitride upon oxidation

In this study, state-of-the-art aberration-corrected environmental transmission electron microscopy is utilized to investigate the atomic-scale structural evolution of titanium nitride during dynamic oxidation. Titanium nitride oxidation originates from the migration of Ti atoms along {200} that results in two distinct reaction pathways, characterized by the formation of chains of titanium vacancies and staggered titanium vacancies. We demonstrate that titanium atoms exhibit varied oxidation activity on different crystal facets, with the selection of oxidation pathways significantly influenced by the curvature of the crystal surface, which is also supported by the First Principles Calculations.

Origin of the distinct site occupations of H atom in hcp Ti and Zr/Hf

The location of the H atoms in Ti, Zr, and Hf is crucial to the formation of the hydrides in these metals as it influences the crystal lattice transformation and the hydrogen diffusion involved in the hydride formation process. Although Ti, Zr, and Hf are all of hexagonal close-packed structure with similar lattice parameters, the solute H atom occupies the octahedral interstice in Ti but the tetragonal interstice in Zr and Hf, of which the origin is still mysterious. In the present work, the origin of the distinct site occupation behavior of H atom in Ti and Zr/Hf is investigated through first principles calculations. The calculated solution energies confirm that H prefers the octahedral interstice in Ti but the tetrahedral interstice in Zr and Hf. We ascribe the distinct site occupations of H in Ti and Zr/Hf to the varying Coulomb repulsion between the H (as a screened proton in the metals) and the matrix atoms against the interstitial size. The competition between the H-induced electron accumulation effect and the matrix atom debonding effect might matter as well. We propose that, as a general rule, a H atom prefers the site with a trade-off between a large space and a high electron density in metals.

Facile synthesis and first principles calculations of Li-MoS2/rGO nanocomposite for high-performance supercapacitor applications

Two-dimensional (2D) nanostructured materials such as graphene oxide nanosheets and molybdenum disulfide (MoS2) are potential candidates for electrochemical energy storage applications. The layered structure of MoS2 makes it a promising active electrode material for supercapacitors. Lithium (Li) interacted with MoS2/reduced graphene oxide (Li-MoS2/rGO) nanocomposite has been synthesized in two steps using a sonochemical dispersion method, and a one-pot hydrothermal method resulting in few-layered MoS2/rGO nanosheets of 2D heterointerfaces. The Li-MoS2/rGO nanocomposite exhibits a high specific capacitance of 173.3 F g−1 at a current density of 1 A g−1. Furthermore, an asymmetric supercapacitor device fabricated with Li-MoS2/rGO achieves a good energy density of 10.6 Wh kg−1 at a power density of 686.3 W kg−1 and outstanding cycling stability with 81.2 % capacity retention over 10,000 cycles. The dispersion of 2D-MoS2 in water is due to the strong electrostatic interface. The structural and electronic properties are theoretically calculated for pristine and Li-interacted MoS2/rGO heterostructure using density functional theory. A comparison of the density of states plots of the two heterostructures and the difference charge density plot of Li-MoS2/rGO heterostructure clearly brings out the importance of the presence of Li. A value of 64 μF cm−2 for the quantum capacitance for pristine MoS2/graphene heterostructure increases to a value 99 μF cm−2 corroborating the experimental observations and we assign this change to the transfer of charge from the Li atom to the outer S atoms in the MoS2/graphene heterostructure. This comprehensive approach, combining experimental synthesis with computational modelling, significantly advances the development and optimization of high-performance supercapacitor materials in the energy storage field. The Li-MoS2/rGO nanocomposite has excellent electrochemical specific capacitance and long-term cyclic stability and has been effectively used for supercapacitor applications with high electrochemical performance.

The electronic and magnetic properties of Cr-doped ZnO monolayer at higher percentage by first principles calculations

The crystal structure, structural stability, electronic band structures and magnetization of Cr-doped ZnO monolayer (ML) have been investigated by GGA+U method using first principles calculations in this work. The stability of these systems is confirmed by the negative formation energies at different Cr concentrations. The calculated band gaps with and without the Hubbard U correction aligned well with other computational results. With the increase of Cr concentration, the band gap of Cr-doped ZnO monolayer decreases for the spin-up configuration. However, in the spin-down configuration, the band gap increases first and then decreases and the maximum band gap is obtained at 22.22% Cr concentrations. At 33.33% Cr concentration, the ZnO ML exhibits metallic behavior. The density of states (DOS) analysis reveals an asymmetric nature, indicating ferromagnetism in Cr-doped ZnO MLs at various concentrations, with a magnetic moment per Cr atom of approximately 3.99 μB. The total magnetic moment rises with increasing Cr concentration. Charge density difference analysis shows increased magnetization with higher Cr concentration. At 22.22% Cr concentration, the ZnO ML exhibits ferromagnetism and semiconducting properties, suggesting significant potential for spintronic applications as a diluted magnetic semiconductor.

Probing the structural, mechanical, electro-magnetic, thermodynamic and thermoelectric properties of inner-transition based RaXO3 (X: Pr and U) cubic perovskites via first principle calculations

Here, we present ab-initio calculations of the structural, mechanical, electronic, magnetic, thermodynamic and thermoelectric properties of two radium-based perovskites by using density functional theory. These compounds are cubic in nature. Computation of tolerance factor, structural optimization by using the equation of state assures the stability of the materials. Further, we have checked the mechanical stability of the materials by computing the different mechanical parameters. The observed data of B/G and Cauchy pressure for the present materials reveals the ductile nature. The spin polarized band structures and density of states illustrate the half-metallic nature of these materials with the band gap of (3.74 and 4.80) eV in spin down channel for RaPrO3 and RaUO3 alloys respectively. The total magnetic moments calculated via GGA and mBJ approximations were found to be integral in nature (1 and 2) μB, for RaPrO3 and RaUO3 alloys respectively which also is an indication of the half-metallic character of these materials. The effect of temperature and pressure on the different thermodynamic properties like the specific heat capacity, thermal expansion and Gruneisen parameter were studied using the quasi-harmonic Debye model. Finally, we have speculated the temperature dependent thermoelectric properties in terms of Seebeck coefficient, electrical conductivity, thermal conductivity and power factor. The summed -up properties suggest the applications of these materials in thermoelectrics, spintronics and thermoelectric generators outlooks.

Theoretical Insights into Off-Stoichiometric Zr(x)Ti(1-x)IrSb Half-Heusler Alloys: A First Principle Calculations.

This study presents a theoretical investigation into the phase stability, electronic, and optical properties of off-stoichiometric Zr_{x}Ti_{1-x}IrSb (x = 0, 0.0625, 0.1875, 0.25, 0.50, 0.75, 1) compounds. Using first-principles calculations, we explore how varying Zr and Ti concentrations can tune the electronic and optical properties of these half-Heusler alloys. The Structural, optical, and electronic properties were meticulously analyzed with both the GGA-PBE and Meta-GGA-SCAN approximations, as implemented in the Vienna Ab initio Simulation Package (VASP). The dynamical stability of these compounds was assessed using the Phonopy package. Our findings reveal that these alloys exhibit semiconductor behavior with tunable band gaps, and their optical properties show significant variation across different compositions, particularly in the visible light range. The compounds also demonstrate robust dynamical stability, indicating their potential for practical applications in electronic and optoelectronic devices. These results underscore the versatility of Zr_{x}Ti_{1-x}IrSb alloys and highlight their promise for next-generation technology.

Delaying cyclization of polyacrylonitrile by boric acid for sulfurized poly(acrylonitrile) cathode materials

Sulfurized poly(acrylonitrile) (SPAN) has become one of the most promising cathode materials in rechargeable Lithium-Sulfur (Li-S) batteries due to their inhibited polysulfide dissolution, high sulfur utilization and excellent electrochemical performance via unique solid–solid conversion mechanism. However, the sulfur content of SPAN (<50 %) is still one of the significant reasons that restrict the electrochemical performance and practical applicability. In this paper, a small amount of boric acid (HBO) was introduced into the precursor of SPAN cathode materials easily before heat-treating, to increase the sulfur content and improve the electrochemical performance. Meanwhile, the results of first principles calculation suggested that the increase of sulfur content of SPAN was derived from the delayed cyclization of polyacrylonitrile (PAN) by HBO. We also discovered when the additive amount of HBO was 1.5 % of PAN mass, the SPAN cathode material possessed high sulfur content up to 54.24 wt%, and delivered prominent reversible electrochemical performances of 714 mAh/g at 0.2C and 734 mAh/g at 0.1C with high Coulombic efficiency. In summary, we proposed a simple and easy method to improve sulfur content and introduced a new strategy for the design of high-sulfur content and high-performance SPAN cathode materials.

Impact of grain size on the performance of WSe2 FETs revealed by first principles calculations

Abstract We theoretically investigate the grain size dependence of the mobility of WSe2 field-effect-transistors (FETs), experimental results on which have been recently reported. Larger grain size (LG) WSe2 has been modeled by single monolayer WSe2 of infinite length. We model smaller grain size (SG) WSe2 as a partial monolayer of WSe2 with a zigzag edge WSe2 nanoribbon. Our results show that the step edges of the partial monolayer WSe2 function as electron traps. Moreover, the effective mass of SG WSe2 appears to be much larger than that of LG WSe2 because of hybridization with gap states originating from step edges at the conduction band minimum. These results coincide with recent experiments that show that the on-currents of SG WSe2 are much lower than those of LG WSe2. Hence, our calculated results indicate that large grain fabrication is essential for advanced large-scale integration (LSI) using WSe2 FETs.

Enhanced energy storage performance in NBT-based MLCCs via cooperative optimization of polarization and grain alignment

Dielectric ceramics possess a unique competitive advantage in electronic systems due to their high-power density and excellent reliability. Na1/2Bi1/2TiO3-based ceramics, one type of extensively studied energy storage dielectric, however, often experience A-site element volatilization and Ti4+ reduction during high-temperature sintering. These issues may result in increased energy loss, reduced polarization and low dielectric breakdown electric field, ultimately making it challenging to achieve both high energy storage density and efficiency. To address these issues, we introduce a synergistic optimization strategy that combine polarization engineering and grain alignment engineering. First principles calculations and experimental analyses show that the doping of Mn2+ can suppress the reduction of Ti4+ in Na1/2Bi1/2TiO3-based ceramics and enhance ion off-centering displacements, thereby reducing energy loss and improving polarization. In addition, we prepared multilayer ceramic capacitors with grains oriented along the <111> direction using the template grain growth method. This approach effectively reduces electric-field-induced strain by 37% and markedly enhances breakdown electric field by 42% when compared with nontextured counterpart. As a result of this comprehensive strategy, <111 >-textured Na1/2Bi1/2TiO3-based multilayer ceramic capacitors achieve an ultra-high energy density of 15.7 J·cm−3 and an excellent efficiency beyond 95% at 850 kV·cm−1, exhibiting a superior overall energy storage performance.

Unveiling the recently synthesis noncentrosymmetric layered ASb3X2O12 (A = K, Rb, Cs, Tl; X = Se, Te) via first principles calculations

This study explores the structural, optical, and thermoelectric properties of non-centrosymmetric layered selenite and tellurite compounds KSb3Se2O12, RbSb3Se2O12, CsSb3Se2O12, TlSb3Se2O12, KSb3Te2O12, RbSb3Te2O12, CsSb3Te2O12, TlSb3Te2O12 to assess their potential for sustainable and renewable energy technologies. The selenite and tellurite compounds feature distinct non-centrosymmetric layered crystal structures, which are key to their unique optical and electronic properties. The materials display a layered structure without a center of symmetry, characterized by distinct atomic arrangements, and their band gaps vary depending on the constituent elements. For selenites, band gaps range from 2.97 eV to 3.19 eV, while for tellurites, they range from 2.75 eV to 3.02 eV, indicate their suitability for indirect semiconducting applications. The investigated materials exhibit high absorbance in the ultraviolet region, suggesting they are promising for solar cell applications. The energy loss function peaks at 14 eV, indicating minimal optical loss in the infrared and visible spectra. The static dielectric constants ε1(0) were calculated, showing variations based on the elemental composition. The response of ε2(ω) demonstrates strong interactions in the ultraviolet region, corresponding to electronic transitions from the valence to the conduction bands. Thermoelectric properties, evaluated with the BoltzTrap code using transport theory. The Seebeck coefficient of p-type semiconductors typically increases with temperature, but TlSb3Se2O12 shows an even greater increase, suggesting enhanced thermoelectric properties. Both selenites and tellurites have rising electrical conductivities, with ASb3Se2O12 peaking at 800 K. The Power Factor improves with temperature, reaching a peak for TlSb3Se2O12. These compounds exhibit favorable electrical conductivity and power factor, suggesting potential applications in thermoelectric systems. The figure of merit (ZT) values spanning from 0.90 to 1.51, with a maximum ZT value of 1.41 at 800 K, TlSb3Se2O12 shows great potential for high-temperature thermoelectric applications. These findings advance the understanding of non-centrosymmetric oxide materials and provide valuable insights for developing advanced materials for energy technologies.

Investigation of square-root higher-order topological insulator based on honeycomb-Kagome lattice of graphene plasmonic crystals

Abstract In this paper, a composite lattice of graphene plasmonic crystals consisting of breathing Kagome lattice and honeycomb lattice is constructed. The band structure of the proposed lattice is obtained by tight binding model, where the Hamiltonian demonstrate the square-root nature, and optical first principle calculation. The results from both methods agree well with each other. The square-root higher-order topological insulator in graphene plasmonic crystal is realized by constructing a sandwich structure, where two sets of corner states are observed. The proposed plasmonic structure might provide a new perspective for integrated plasmonic circuits and nano-topological lasers.&amp;#xD;

Effects of insertion of an h-AlN monolayer spacer in Pt-WSe2-Pt field-effect transistors

The growth of two-dimensional hexagonal aluminum nitride (h-AlN) on transition metal dichalcogenide (TMD) monolayers exhibits superior uniformity and smoothness compared to HfO2\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$_{2}$$\\end{document} on silicon substrate. This makes an h-AlN monolayer an ideal spacer between the gate oxide material and the WSe2 monolayer in a two-dimensional field effect transistor (FET). From first principles approaches, we calculate and compare the transmission functions and current densities of Pt–WSe2–Pt nanojunctions without and with the insertion of an h-AlN monolayer as a spacer in the gate architecture. The inclusion of h-AlN can alter the characteristics of the Pt–WSe2–Pt FET in response to the gate voltage (Vg\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$V_\ ext {g}$$\\end{document}). The FET without (or with) h-AlN exhibits the characteristics of a P-type (or bipolar) transistor: an on/off ratio of around 2.5×106\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$2.5 \ imes 10^{6}$$\\end{document} (or 1.7×106\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$1.7 \ imes 10^{6}$$\\end{document}); and an average subthreshold swing (S.S.) of approximately 109 mV/dec.\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\ ext {dec.}$$\\end{document} (or 112 mV/dec.\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\ ext {dec.}$$\\end{document}), respectively. We observe that Vg\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$V_\ ext {g}$$\\end{document} shifts the profile of the transmission function by an energy of α(eVg)\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\alpha (e V_{\ ext {g}})$$\\end{document}, where α\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\alpha$$\\end{document} represents the gate-controlling efficiency. We observed that αin=83%\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\alpha _{\ ext {in}}=83\\%$$\\end{document} and αout=33%\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\alpha _{\ ext {out}}=33\\%$$\\end{document}, corresponding to whether the Fermi energy is located inside or outside the band gap. Therefore, we construct an effective gate model based on the Landauer formula, with the transmission function at Vg=0\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$V_\ ext {g}=0$$\\end{document} as the baseline. Our model generates results that are consistent with those obtained through first principles calculations. The relative error in current densities between model and first-principles calculations is within [ln(10)S.S.]|ΔVGeff|\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$[\\frac{ln(10)}{S.S.}] | \\Delta V_{\ ext {G}}^{\ ext {eff}} |$$\\end{document}. The 2D atomistic FETs show excellent device specifications and the ability to compete with existing transistors based on traditional silicon technology. Our findings could help advance the design of TMD-based FETs.

Anchoring ability and catalytic activity of B2C2 monolayer as the lithium-sulfur batteries cathode materials: A first principle calculation

Through first-principles calculation, the performance of B2C2 monolayer as the Li-S batteries cathode anchoring material is systematically investigated. The B2C2 monolayer exhibits excellent thermodynamic, kinetic and mechanical stability, which are helpful to resist the volume change caused by the reaction during charging and discharging process. Importantly, the adsorption energy of S8 clusters and LiPSs in the B2C2 monolayer is remarkably higher than that in the cathode electrolyte, which greatly inhibits the generation of shuttle effect. The calculations of the catalytic performance of B2C2 monolayer further suggest that the system possesses a lower the Gibbs free energy (ΔG) barrier of 0.71 eV and a fast kinetic conversion process with low diffusion barrier of 0.257 eV along hexatomic ring B2C4, implying a fast charge and discharge rate and excellent cycle performance. The B2C2 monolayer with high energy conversion efficiency and catalytic activity can be expected as an emerging sustainable clean energy source.

Electronic, Optical and Thermoelectric Properties of Two-Dimensional Molybdenum Carbon Mo2C-MXenes

We investigate the structural, electronic, optical, and thermoelectric properties of three compositions of Mo2C-MXenes (Mo2CF2, Mo2C(OH)2, and Mo2CO2) from monolayer to multilayer by first principles calculation within Density Functional Theory (DFT) and Boltzmann transport theory. Firstly, the atomic structures of Mo2C-MXenes are optimized, and their respective structures are created with comparative research. Secondly, their electronic band structures and optical properties are studied in detail. The estimation of the bandgap energy of Mo2C-MXenes with its functionalization reveal that most Mo2CF2 and Mo2C(OH)2 layers are semiconductors, while Mo2CO2 behaves as a metal. The electrical and optical properties can be altered by controlling the on-surface functional groups and the number of layers. Computation of the thermoelectric (TE) properties of Mo2C-MXenes reveals that, upon heating to 600 K, Mo2CF2 and Mo2C(OH)2 exhibit a high Seebeck coefficient and a relatively high electrical conductivity. The Seebeck coefficient reaches ~400 µV K−1 at room temperature for all layers of Mo2CF2 MXenes. Our results prove that Mo2CF2 is considered a promising material for thermoelectric devices, while Mo2CO2 does not possess better thermoelectric performance. Mo2C-MXenes from monolayer to multilayer have outstanding properties, such as flexible bandgap energy and high thermal stability, making them promising candidates for many applications, including energy storage and electrode applications.

Transition-metal-based hydrides for efficient hydrogen storage and their multiple bond analysis: A first-principles calculation

Hydrogen energy plays a growing role in the present energy market and attracts more attention in scientific researches and commercial application. Hydrogen energy has an increasing attractive in energy market due to its high energy density, pollution-free utilization usage and wide availability. Current challenge which obstructs large-scale application is safe and reliable hydrogen storage, which requires finding promising materials to promote hydrogen energy. Therefore, we have predicted three potential lithium-transition metal-based hydrides LiTM3LiH8 (TM = Sc, Ti V) for hydrogen storage based on first principles calculation. The stability analysis based on formation energy, elastic constants and phonon spectra confirms all hydrides are stable and feasible in practical application. Besides, they have a increasing ductility in the order of Sc, Ti and V. Among all studied materials, LiV3LiH8 has the best mechanical characteristics due to its excellent ductility and high Young's modulus (123.19 GPa), which are beneficial for resistance to adverse external surroundings. The electronic properties suggest that all hydrides metallic in band structures. Meanwhile, we analyzed how hydrogen was storage and the binding information from multiple perspectives, including the charge analysis, DOS, ELF and COHP. From multiple analyses of bond strengths, except the strong binding from transition metal, the centered Li atom is verified to possess greater influence than corner Li atom, which makes a viable regulation of hydrogen properties by substituting centered alkali metal atom in future. As concluded in this study, LiTi3LiH8 has a high storage capacity of 4.83 wt% along with a desorption temperature of 305.5 K, which is considered as a promising hydrogen storage material.

Large out-of-plane piezoelectric response and ultra-low polarization transition barriers in two-dimensional MoGe2N4/MoSi2N4 heterostructures

With the help of the first principle calculations, two-dimensional (2D) MoGe2N4/MoSi2N4 van der Waals (vdW) heterojunction was confirmed as a type II bandgap arrangement with distinct piezoelectric properties dependent on the stacking orders and interlayer interactions. This structural change is facilitated by slip interactions between the layers and is characterized by a process with a low energy barrier, allowing for efficient and responsive phase transition of structures. Notably, this heterojunction exhibits a particularly large out-of-plane piezoelectric coefficient, d33, within a finite thickness. Concurrently, the piezoelectric coefficient can be enhanced by adjusting the vertical strain to a specific value, and the out-of-plane piezoelectric coefficient d33 can be as high as 73.28 pm/V, which is larger than the values of the available 2D materials or their heterojunctions. In addition, we simulated a piezoelectric actuator on a two-dimensional scale, where the deformation of the upper surface of the piezoelectric brake was linearly modulated by adjusting the driving voltage. Thus, our research paves the way for the conceptualization and creation of cutting-edge nanoelectronic devices, electromechanical systems, and multifunctional atomic-scale appliances.

Highly selective photocatalytic oxidation of CH4 to CH3OH: A theoretical study

Photooxidation of methane (CH4) in aqueous solution to generate high-value organic compounds is an effective way to replace traditional industrial methods. It is crucial to select catalysts that can avoid competitive reactions and achieve high selectivity. Using first principles calculations, a novel one-dimensional (1D) Ti3C2O2 nanoribbon (NR)/two-dimensional (2D) monolayer MoS2 (MS) heterojunction photocatalyst was ingenious designed in this work, which can achieve the oxidation of CH4 molecules and suppress the execution of competitive reactions. The results indicate that the constructed 1D NR exhibits semiconductor properties and its energy level position meet the requirements of photocatalytic oxidation for CH4. The heterojunction structure composed of NR and MS forms an efficient S-Scheme electron transfer mechanism under illumination, which not only provides sufficient internal driving force for CH4 oxidation, but also effectively avoids the competitive reaction between water molecules and photo-generated holes. Specifically, the photocatalysts exhibits high selectivity and low reaction overpotential for the generation of methanol (CH3OH). This study provides a new perspective for photocatalytic CH4 oxidation and demonstrates the potential application value of 1D MXene in the future field of photocatalysis.

Optical and electronic properties of RENiO3 doped with alkali earth metals (Be, Mg, Ca, Sr and Ba): Combining first principles calculations and machine learning

The perovskite rare earth nickelate (RENiO3) has attracted significant attention owing to its peculiar physical properties and promising potential for diverse applications. It is reported that introducing H or Li might change the electronic and optical properties of RENiO3. However, little is known about multi-electrons doping in RENiO3. In this study, the bandgaps, optical and electronic properties were investigated in RENiO3 with alkaline earth metal (AEM) elements (Be, Mg, Ca, Sr and Ba) doping. For the atomic configurations of doped RENiO3, the interstitial sites of RENiO3 are more likely to be occupied by Be, Mg and Ca atoms, whereas Sr and Ba atoms tend to replace RE atoms in RENiO3. The band gap of RENiO3 decreases after AEM doping. Moreover, the machine learning results found that the formation energy of the AEM, the relative atomic mass of the AEM, and the doping position significantly influence the band gap. Furthermore, the infrared light blocking capability, the visible light transmission, and the electronic conductivity are enhanced in AEM doped RENiO3. This study may contribute to the experimental modulation of the optical and electronic properties of RENiO3 through AEM doping.

Ferroelectric Semimetals with α-Bi/SnSe van der Waals Heterostructures and Their Topological Currents.

We show that proximity effects can be utilized to engineer van der Waals heterostructures (vdWHs) displaying semimetallic spin-ferroelectricity locking, where ferroelectricity and semimetallic spin states are confined to different layers, but are correlated by means of proximity effects. Our findings are supported by first principles calculations involving α-Bi/SnSe bilayers. We show that such systems support ferroelectrically switchable nonlinear anomalous Hall effect originating from large Berry curvature dipoles as well as direct and inverse spin Hall effects with giant bulk spin-charge interconversion efficiencies. The giant efficiencies are consequences of the proximity-induced semimetallic nature of low energy electron states, which are shown to behave as two-dimensional pseudo-Weyl fermions by means of symmetry analysis and first principles calculations as well as direct angle-resolved photoemission spectroscopy measurements.