Optoelectronic devices play an essential part in our daily lives by seamlessly integrating optics and electronics, leading to technologies such as smartphones, solar cells, and optical communication. In this study, the structural and optoelectronic characteristics of the hexagonal vanadium silicide are determined using the density functional theory (DFT). The structural parameters such as the zero-pressure bulk modulus B0, its pressure derivative B0′; equilibrium energy, and the volume of the primitive cell at equilibrium V0 are compared with experiment results. The metallic character of VSi2 is confirmed by calculating the density of states and band structure. Moreover, the optical properties like the dielectric function, reflectivity, energy loss function, refractive index, absorption coefficient, and optical conductivity are studied deeply, using the Drude model, within the energy interval from 0 to 14 eV and they are compared with experiment results of a polycrystalline and single crystal. However, the phonon dispersion spectrum shows the presence of imaginary modes, which indicates instability in the structure of vanadium silicide. The results indicate that the VSi2 material has the potential to be used in many applications, including mirrors, glass coatings, optoelectronic devices, optical networks, electronics, optical communications, and waveguide components.
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