Preparation Of Silicon Thin Films Research Articles

Preparation of Silicon Thin Films of Different Phase Composition from Monochlorosilane as a Precursor by RF Capacitive Plasma Discharge

Monochlorosilane/argon/hydrogen (SiH3Cl-Ar-H2) mixture of different ratios was investigated from the point of PECVD application. RF capacitive plasma discharge of 40.68 MHz frequency was used. The process of deposition was studied by optical emission spectroscopy. The silicon thin films of different phase composition were obtained. The thin films were characterized by Raman-spectroscopy, atomic force microscopy, and secondary ion mass spectrometry. The exhaust gas mixture was analyzed by IR-spectroscopy in outlet of the reactor during PECVD process. The chemical mechanism for the deposition process was also proposed.

Heat-Induced Agglomeration of Amorphous Silicon Nanoparticles Toward the Formation of Silicon Thin Film.

The thermal behavior of silicon nanoparticles (Si NPs) was investigated for the preparation of silicon thin film using a solution process. TEM analysis of Si NPs, synthesized by inductively coupled plasma, revealed that the micro-structure of the Si NPs was amorphous and that the Si NPs had melted and merged at a comparatively low temperature (~750 °C) considering bulk melting temperature of silicon (1414 °C). A silicon ink solution was prepared by dispersing amorphous Si NPs in propylene glycol (PG). It was then coated onto a silicon wafer and a quartz plate to form a thin film. These films were annealed in a vacuum or in an N₂ environment to increase their film density. N2 annealing at 800 °C and 1000 °C induced the crystallization of the amorphous thin film. An elemental analysis by the SIMS depth profile showed that N₂annealing at 1000 °C for 180 min drastically reduced the concentrations of carbon and oxygen inside the silicon thin film. These results indicate that silicon ink prepared using amorphous Si NPs in PG can serve as a proper means of preparing silicon thin film via solution process.

Preparation of Silicon Thin Film by Plasma Enhanced Chemical Vapor Deposition as a High Capacity Anode for Lithium Polymer Batteries

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Preparation of silicon thin films by intense pulsed ion-beam evaporation method with low temperature process

We have succeeded in preparing polycrystalline silicon thin films by the intense pulsed ion-beam evaporation method without impurities on substrates of silicon and quartz. Good crystallinity and high deposition rate were achieved without thermal processing such as heating the substrates. The crystallinity of poly-Si film has been improved by increasing the density of the ablation plasma. Since the lifetime of the ablation plasma, which was obtained by a pulsed ion beam with 50-ns pulse width, is of the order of 20 μs, the instantaneous deposition rate is in the region of cm/s. The crystallinity was increased by increasing the number of shots. The crystallization and the deposition rate of poly-Si thin films prepared on different substrate positions were investigated.