Practical Single-photon Sources Research Articles

Electrical charge control of h-BN single photon sources

Colour centres of hexagonal boron nitride (h-BN) have been discovered as promising and practical single photon sources due to their high brightness and narrow spectral linewidth at room-temperature. In order to realize h-BN based photonic quantum communications, the ability to electrically activate the single photon fluorescence using an external electric field is crucial. In this work, we show the electrical switching of the photoluminescence from h-BN quantum emitters, enabled by the controllable electron transfer from the nearby charge reservoir. By tuning the Fermi level of graphene next to the h-BN defects, we observed luminescence brightening of quantum emitters upon the application of a voltage due to the direct charge state manipulation. In addition, the correlation measurement of the single photon sources with the graphene’s Raman spectroscopy allows us to extract the exact charge transition level of quantum emitters, providing the information on the crystallographic nature of the defect structure. With the complete on-off switching of emission intensity of h-BN quantum emitters using a voltage, our result paves the way for the van der Waals colour centre based photonic quantum information processing, cryptography and memory applications.

Single-Photon Sources Based on Novel Color Centers in Silicon Carbide P–I–N Diodes: Combining Theory and Experiment

HighlightsTheory of electrically driven single-photon sources based on color centers in silicon carbide p–i–n diodes.New method of determining the electron and hole capture cross sections by an optically active point defect (color center) from the experimental measurements of the single-photon electroluminescence rate and second-order coherence.The developed method is based on the measurements at the single defect level. Therefore, in contrast to other approaches, one point defect is sufficient to measure its electron and hole capture cross sections.Point defects in the crystal lattice of SiC, known as color centers, have recently emerged as one of the most promising single-photon emitters for non-classical light sources. However, the search for the best color center that satisfies all the requirements of practical applications has only just begun. Many color centers in SiC have been recently discovered but not yet identified. Therefore, it is extremely challenging to understand their optoelectronic properties and evaluate their potential for use in practical single-photon sources. Here, we present a theoretical approach that explains the experiments on single-photon electroluminescence (SPEL) of novel color centers in SiC p–i–n diodes and gives the possibility to engineer highly efficient single-photon emitting diodes based on them. Moreover, we develop a novel method of determining the electron and hole capture cross sections by the color center from experimental measurements of the SPEL rate and second-order coherence. Unlike other methods, the developed approach uses the experimental results at the single defect level that can be easily obtained as soon as a single-color center is identified in the i-type region of the SiC p–i–n diode.Graphic

InP-Substrate-Based Quantum Dashes on a DBR as Single-Photon Emitters at the Third Telecommunication Window.

We investigated emission properties of photonic structures with InAs/InGaAlAs/InP quantum dashes grown by molecular beam epitaxy on a distributed Bragg reflector. In high-spatial-resolution photoluminescence experiment, well-resolved sharp spectral lines are observed and single-photon emission is detected in the third telecommunication window characterized by very low multiphoton events probabilities. The photoluminescence spectra measured on simple photonic structures in the form of cylindrical mesas reveal significant intensity enhancement by a factor of 4 when compared to a planar sample. These results are supported by simulations of the electromagnetic field distribution, which show emission extraction efficiencies even above 18% for optimized designs. When combined with relatively simple and undemanding fabrication approach, it makes this kind of structures competitive with the existing solutions in that spectral range and prospective in the context of efficient and practical single-photon sources for fiber-based quantum networks applications.

Single photon sources with single semiconductor quantum dots

In this contribution, we briefly recall the basic concepts of quantum optics and properties of semiconductor quantum dot (QD) which are necessary to the understanding of the physics of single-photon generation with single QDs. Firstly, we address the theory of quantum emitter-cavity system, the fluorescence and optical properties of semiconductor QDs, and the photon statistics as well as optical properties of the QDs. We then review the localization of single semiconductor QDs in quantum confined optical microcavity systems to achieve their overall optical properties and performances in terms of strong coupling regime, efficiency, directionality, and polarization control. Furthermore, we will discuss the recent progress on the fabrication of single photon sources, and various approaches for embedding single QDs into microcavities or photonic crystal nanocavities and show how to extend the wavelength range. We focus in particular on new generations of electrically driven QD single photon source leading to high repetition rates, strong coupling regime, and high collection efficiencies at elevated temperature operation. Besides, new developments of room temperature single photon emission in the strong coupling regime are reviewed. The generation of indistinguishable photons and remaining challenges for practical single-photon sources are also discussed.

Ultrafast single photon emitting quantum photonic structures based on a nano-obelisk

A key issue in a single photon source is fast and efficient generation of a single photon flux with high light extraction efficiency. Significant progress toward high-efficiency single photon sources has been demonstrated by semiconductor quantum dots, especially using narrow bandgap materials. Meanwhile, there are many obstacles, which restrict the use of wide bandgap semiconductor quantum dots as practical single photon sources in ultraviolet-visible region, despite offering free space communication and miniaturized quantum information circuits. Here we demonstrate a single InGaN quantum dot embedded in an obelisk-shaped GaN nanostructure. The nano-obelisk plays an important role in eliminating dislocations, increasing light extraction, and minimizing a built-in electric field. Based on the nano-obelisks, we observed nonconventional narrow quantum dot emission and positive biexciton binding energy, which are signatures of negligible built-in field in single InGaN quantum dots. This results in efficient and ultrafast single photon generation in the violet color region.

Bright single-photon source based on an InAs quantum dot in a silver-embedded nanocone structure

High photon-extraction efficiency is strongly required for a practical single-photon source. We succeed in fabricating metal (sliver)-embedded nanocone structure incorporating an InAs quantum dot. Efficient photon emission of ∼200 000 photons per second is detected and single-photon emission is demonstrated using autocorrelation measurements. The photon-extraction efficiency as high as 24.6% is obtained from the structure.

Passive sources for the Bennett-Brassard 1984 quantum-key-distribution protocol with practical signals

Most experimental realizations of quantum key distribution are based on the Bennett-Brassard 1984 (so-called BB84) protocol. In a typical optical implementation of this scheme, the sender uses an active source to produce the required BB84 signal states. While active state preparation of BB84 signals is a simple and elegant solution in principle, in practice passive state preparation might be desirable in some scenarios, for instance, in those experimental setups operating at high transmission rates. Passive schemes might also be more robust against side-channel attacks than active sources. Typical passive devices involve parametric down-conversion. In this paper, we show that both coherent light and practical single photon sources are also suitable for passive generation of BB84 signal states. Our method does not require any external-driven element, but only linear optical components and photodetectors. In the case of coherent light, the resulting key rate is similar to the one delivered by an active source. When the sender uses practical single photon sources, however, the distance covered by a passive transmitter might be longer than the one of an active configuration.

Single-Event Correlation Analysis of Quantum Key Distribution with Single-Photon Sources

Multiple photons exist that allow efficient eavesdropping strategies that threaten the security of quantum key distribution. In this paper, we theoretically discuss the photon correlations between authorized partners in the case of practical single-photon sources including a multiple-photon background. To investigate the feasibility of intercept-resend attacks, the cross correlations and the maximum intercept-resend ratio caused by the background signal are determined using single-event correlation analysis based on single-event detection.

Boosting up quantum key distribution by learning statistics of practical single-photon sources

We propose a simple quantum-key-distribution (QKD) scheme for practical single-photon sources (SPSs), which works even with a moderate suppression of the second-order correlation g(2) of the source. The scheme utilizes a passive preparation of a decoy state by monitoring a fraction of the signal via an additional beam splitter and a detector at the sender's side to monitor photon-number splitting attacks. We show that the achievable distance increases with the precision with which the sub-Poissonian tendency is confirmed in higher photon-number distribution of the source, rather than with actual suppression of the multiphoton emission events. We present an example of the secure key generation rate in the case of a poor SPS with g(2)=0.19, in which no secure key is produced with the conventional QKD scheme, and show that learning the photon-number distribution up to several numbers is sufficient for achieving almost the same distance as that of an ideal SPS.

Characterization of photon statistics in a single-photon source via variable attenuation

We propose a simple but effective scheme for characterizing photon-number statistics of a practical single-photon source. In this scheme, the variable attenuation method which frequently appears in decoy state quantum cryptography is utilized here to enhance the estimation of photon-number statistics. A much stricter bound for vacuum and single-photon proportions is obtained and this result, in turn, is shown to be applicable to the unconditional secure quantum cryptographic communication with single-photon devices.

Efficient spatial redistribution of quantum dot spontaneous emission from two-dimensional photonic crystals

The authors investigate the modification of the spontaneous emission dynamics and the external quantum efficiency for self-assembled InGaAs quantum dots coupled to extended and localized photonic states in GaAs two-dimensional photonic crystals. The photonic band gap is shown to give rise to a five to ten times enhancement of the external quantum efficiency, while the spontaneous emission rate is simultaneously reduced by a comparable factor. The findings are quantitatively explained by a modal redistribution of spontaneous emission due to the modified local density of photonic states. The results suggest that quantum dots embedded within photonic crystals are suitable for practical single photon sources with high external efficiency.

A gallium nitride single-photon source operating at 200 K

Fundamentally secure quantum cryptography has still not seen widespread application owing to the difficulty of generating single photons on demand. Semiconductor quantum-dot structures have recently shown great promise as practical single-photon sources, and devices with integrated optical cavities and electrical-carrier injection have already been demonstrated. However, a significant obstacle for the application of commonly used III-V quantum dots to quantum-information-processing schemes is the requirement of liquid-helium cryogenic temperatures. Epitaxially grown gallium nitride quantum dots embedded in aluminium nitride have the potential for operation at much higher temperatures. Here, we report triggered single-photon emission from gallium nitride quantum dots at temperatures up to 200 K, a temperature easily reachable with thermo-electric cooling. Gallium nitride quantum dots also open a new wavelength region in the blue and near-ultraviolet portions of the spectrum for single-photon sources.

Color Centers in Diamond as Practical Single-Photon Source to Illustrate Quantum Complementarity

ABSTRACTA recent experiment performed by S. S. Afshar [reviewed in M. Chown, New Scientist183, 30 (2004)] has been interpreted as a possible violation of the complementarity principle of quantum mechanics. Starting from a single-photon wavefront-splitting interference experiment, we propose a new scheme for Afshar's experiment, and we show that Afshar's interpretation is incorrect. Furthermore, this design is well suited to illustrate the complementarity inequality in the interesting intermediate regimes with partial fringe visibility and partial which-path information.

Single-photon sources

The article surveys the state of the art in the design, development and application of devices for deterministically generating single photons on demand. Both the defined function and requisite form of such ‘single-photon’ sources are explained in detail. Their attributes and characteristics, in particular the photon-counting statistics of the light that they generate, are presented in conjunction with the experimental apparatus (most notably the Hanbury-Brown and Twiss interferometer) for measuring them. Promising applications of single-photon sources within quantum key distribution, quantum information processing, as well as metrology and fundamental tests of quantum mechanics, are described. The utility and relative advantages of single-photon sources vis-á-vis more conventional sources of light are explained in terms of application-specific requirements and the respective abilities of different sources to fulfil them. The article collects, classifies and sorts the most significant work towards realizing practical single-photon sources to date. Though emanating from a diverse set of technological disciplines, with different research and application objectives in mind, the relative advantages and drawbacks of each approach are assessed, to give the reader a broad yet coherent and critical review of a rapidly developing research front.

Indistinguishable single photons from a quantum dot

AbstractWe report a set of experiments designed to test the quantum indistinguishability of single photons emitted by a resonantly pumped InAs/GaAs quantum dot, embedded in a microcavity. We first performed high resolution interferometric measurements on the source to infer its coherence time. By comparison with the exciton lifetime, obtained by time‐resolved spectroscopy, we found that some quantum dots were emitting almost transform‐limited photons. The measured ratio of the coherence time to the pulse duration gives a lower bound on the dephasing time which agrees well with previous studies. We then directly measured the mean overlap between wave packets of consecutive photons emitted 2 ns apart, through a Hong–Ou–Mandel type two‐photon interference experiment. For the best dot, an overlap as high as 0.81 was inferred. This result suggests that quantum dots could be a practical single photon source to perform quantum information processing experiments. We stress the importance of the microcavity for identical photon generation.