Practical Applications In Spintronics Research Articles

Air-Stable Wafer-Scale Ferromagnetic Metallo-Carbon Nitride Monolayer.

The pursuit of robust, long-range magnetic ordering in two-dimensional (2D) materials holds immense promise for driving technological advances. However, achieving this goal remains a grand challenge due to enhanced quantum and thermal fluctuations as well as chemical instability in the 2D limit. While magnetic ordering has been realized in atomically thin flakes of transition metal chalcogenides and metal halides, these materials often suffer from air instability. In contrast, 2D carbon-based materials are stable enough, yet the challenge lies in creating a high density of local magnetic moments and controlling their long-range magnetic ordering. Here, we report a novel wafer-scale synthesis of an air-stable metallo-carbon nitride monolayer (MCN, denoted as MN4/CNx), featuring ultradense single magnetic atoms and exhibiting robust room-temperature ferromagnetism. Under low-pressure chemical vapor deposition conditions, thermal dehydrogenation and polymerization of metal phthalocyanine (MPc) on copper foil at elevated temperature generate a substantial number of nitrogen coordination sites for anchoring magnetic single atoms in monolayer MN4/CNx (where M = Fe, Co, and Ni). The incorporation of densely populating MN4 sites into monolayer MCN networks leads to robust ferromagnetism up to room temperature, enabling the observation of anomalous Hall effects with excellent chemical stability. Detailed electronic structure calculations indicate that the presence of high-density metal sites results in the emergence of spin-split d-bands near the Fermi level, causing a favorable long-range ferromagnetic exchange coupling through direct exchange interactions. Our work demonstrates a novel synthesis approach for wafer-scale MCN monolayers with robust room-temperature ferromagnetism and may shed light on practical electronic and spintronic applications.

Influence of Magnetic Sublattice Ordering on Skyrmion Bubble Stability in 2D Magnet Fe5GeTe2.

The realization of above room-temperature ferromagnetism in the two-dimensional (2D) magnet Fe5GeTe2 represents a major advance for the use of van der Waals (vdW) materials in practical spintronic applications. In particular, observations of magnetic skyrmions and related states within exfoliated flakes of this material provide a pathway to the fine-tuning of topological spin textures via 2D material heterostructure engineering. However, there are conflicting reports as to the nature of the magnetic structures in Fe5GeTe2. The matter is further complicated by the study of two types of Fe5GeTe2 crystals with markedly different structural and magnetic properties, distinguished by their specific fabrication procedure: whether they are slowly cooled or rapidly quenched from the growth temperature. In this work, we combine X-ray and electron microscopy to observe the formation of magnetic stripe domains, skyrmion-like type-I, and topologically trivial type-II bubbles, within exfoliated flakes of Fe5GeTe2. The results reveal the influence of the magnetic ordering of the Fe1 sublattice below 150 K, which dramatically alters the magnetocrystalline anisotropy and leads to a complex magnetic phase diagram and a sudden change of the stability of the magnetic textures. In addition, we highlight the significant differences in the magnetic structures intrinsic to slow-cooled and quenched Fe5GeTe2 flakes.

Room-temperature ferromagnetism in semimetallic Co-intercalated MoTe2

Fe-intercalated TaS2 prepared via the chemical intercalation of iron into van der Waals (vdW) layered 2H-TaS2 crystals enables hard ferromagnetic behavior, making it attractive for spintronic applications. However, the Curie transition at room temperature and no gate controllability in metallic TaS2 are still unfavorable. Here, we demonstrate the feasibility of realizing a ferromagnetic semimetal through the wet chemical intercalation of cobalt into semiconducting 2H-MoTe2, thereby leveraging its polymorphism. Transmission electron microscopy, X-ray photoelectron spectroscopy, and Raman spectroscopy reveal the insertion of pure Co atoms within the vdW gap following the intercalation process. Co-intercalated MoTe2 (Co-MoTe2) demonstrates a conductivity of 1.5 orders of magnitude higher than that of 2H-MoTe2. This significant increase in the conductance facilitates the direct investigation of ferromagnetism through magnetotransport measurements. Co-MoTe2 exhibits a positive magnetoresistance of approximately 4%, with hysteresis observed even at room temperature. Furthermore, density functional theory calculations corroborate the enhancement of the magnetoresistance ratio and Curie temperature, which is attributed to the ferromagnetism induced by local magnetic moments resulting from the incorporation of cobalt. This study paves the way for enhanced practical applications in future spintronics by demonstrating the effectiveness of integrating foreign magnetic atoms into the vdW gap, thereby increasing the operational temperature.

Designing Organic Spin-Gapless Semiconductors via Molecular Adsorption on C4N3 Monolayer.

Spin-gapless semiconductor (SGS), a class of zero-gap materials with fully spin-polarized electrons and holes, offers significant potential for high-speed, low-energy consumption applications in spintronics, electronics, and optoelectronics. Our first-principles calculations revealed that the Pca21 C4N3 monolayer exhibits a ferromagnetic ground state. Its band structure displays SGS-like characteristics, with the energy gap between the valence and conduction bands near the Fermi level in the spin-down channel much smaller than the one in the other spin channel. To enhance its SGS properties, we introduced electrons into the Pca21 C4N3 monolayer by adsorbing the CO gas molecule on its surface. Stable gas adsorption (CO@C4N3) effectively narrowed the band gap in the spin-down channel without changing the band gap in the spin-up channel obviously. Moreover, injecting holes into the CO@C4N3 system could increase the net magnetic moments and induce an SGS-to-metallic phase transition, while injecting electrons into the CO@C4N3 system is able to lower the net magnetic moments and cause an SGS-to-half-metallic phase transition. Our findings not only underscore a new promising material for practical metal-free spintronics applications but also illustrate a viable pathway for designing SGSs.

Electronic, magnetic and structural properties of CoFeVAl and CoFeV0.5Mn0.5Al

In this study, we present results of a comprehensive computational and experimental study of CoFeVAl and CoFeV0.5Mn0.5Al Heusler alloys. It is shown that while CoFeVAl exhibits a fairly large degree of spin polarization, this material is not half-metallic due to the presence of the vanadium spin-down states at the Fermi level. However, replacing 50% of vanadium with manganese results in a nearly half-metallic transition, largely due to the shift of the Fermi level towards occupied states. Moreover, the half-metallicity of CoFeV0.5Mn0.5Al is rather robust in a wide range of considered mechanical strain and under experimentally observed B2-type atomic disorder, thus making this alloy potentially suitable for practical spintronic applications. Both considered alloys exhibit ferromagnetic alignment at larger lattice constants, aside from a relatively small magnetic moment of vanadium which is anti-aligned with the magnetic moments of Co, Fe and Mn. We have synthesized both CoFeVAl and CoFeV0.5Mn0.5Al alloys in cubic structure with some structural disorder using arc melting and annealing. The structural and magnetic properties of the synthesized CoFeV0.5Mn0.5Al alloy are in good agreement with the theoretical calculations but vary slightly from the parent compound.

Intrinsic room-temperature ferromagnetism in two-dimensional ternary transition metal tellurides CrX2Te4 (X = Al, Ga, and In)

A tremendous amount of research has witnessed the exploration of two-dimensional (2D) materials with intrinsic ferromagnetism and diverse physical properties. However, the low Curie temperature and deficient magnetic anisotropy hinder their practical applications in nanoscale spintronics. Based on first-principles calculations, we propose a new family of 2D ternary transition metal tellurides, CrX2Te4 (X = Al, Ga, and In), with both structural and magnetic stabilities at room temperature. Our calculations demonstrate that the 2D CrX2Te4 crystal exhibits the intrinsic 100% spin-polarized half-metallic feature with spin-up metallic and spin-down semi-conducting properties. With the remarkable magnetic moment of 4 μB per Cr atom, both 2D CrAl2Te4 and CrGa2Te4 crystals perform robust ferromagnetism with the out-of-plane magnetic anisotropy, while the 2D CrIn2Te4 crystal prefers the in-plane easy magnetization axis. The Monte Carlo simulation based on the 2D Heisenberg model shows that the critical Curie temperatures of the 2D CrAl2Te4, CrGa2Te4, and CrIn2Te4 crystals could reach 466, 431, and 536 K, respectively. Moreover, the magnetic exchange strength and magnetic anisotropy could be further enhanced by the in-plane biaxial strain. The novel electronic and magnetic features promote 2D CrX2Te4 (X = Al, Ga, and In) crystals as a new family of two-dimensional intrinsic ferromagnetic materials for next-generation advanced spintronics.

Room-Temperature Magnetic-Induced Circularly Polarized Photoluminescence in Two-Dimensional Er2O2S.

Two-dimensional (2D) materials with spin polarization have great potential for achieving next-generation spintronic applications. However, spin polarization of 2D materials is usually produced at a cryogenic temperature because of thermal fluctuations, which severely hinder their further applications. Here, we report room-temperature intrinsic magnetic-induced circularly polarized photoluminescence (PL) in 2D Er2O2S flakes. The geff factor of 2D Er2O2S stays at around -6.3 from the liquid He temperature limit to room temperature, which is independent of temperature. This anomalous phenomenon in Er2O2S is totally different from previous materials, which all have a decreasing Zeeman splitting with increasing temperature resulting from thermal fluctuations. The anomalous temperature-dependent magnetic-induced circularly polarized PL originates from the weak electron-phonon coupling in 2D Er2O2S, which has been proven by both the temperature-dependent Raman and theoretical calculations. This work sheds light on the understanding and manipulation of 2D materials for practical spintronic applications.

Spin-polarized currents induced in antiferromagnetic polymer multilayered field-effect transistors.

A theoretical construction of an antiferromagnetic polymer multilayered field-effect transistor with polymers stretched between the source and drain contacts was undertaken. The model employed a quantum approach to the on-chain spin-charge distribution, which was self-consistently coupled with the charge distribution controlled by the gate voltage. Contrary to standard field-effect transistors, we found that the current firstly increased superlinearly with the drain voltage, then it achieved the maximum for drain voltages notably lower than the gate voltage, and after that, it decreased with the drain voltage with no saturation. Such effects were coupled with the formation of the current spin-polarization ratio, where the on-chain mobility of respective spin-polarized charges was significantly dependent on the applied drain voltage. These effects arise from competition among the antiferromagnetic coupling, the intra-site spin-dependent Coulomb interaction, and the applied drain and gate voltages, which strongly influence the on-chain spin-charge distribution, varying from an alternating spin configuration to a spin-polarized configuration at both ends of the chain. Substantial control over the magnitude of spin-polarized currents was achieved by manipulating gate and drain voltages, showcasing the feasibility of practical applications in spintronics.

Above-Room-Temperature Ferromagnetism in Copper-Doped Two-Dimensional Chromium-Based Nanosheets.

Two-dimensional ferromagnetic materials (2D-FMs) are expected to become ideal candidates for low-power, high-density information storage in next-generation spintronics devices due to their atomically ultrathin and intriguing magnetic properties. However, 2D-FMs with room-temperature Curie temperatures (Tc) are still rarely reported, which greatly hinders their research progress and practical applications. Herein, ultrathin Cu-doped Cr7Te8 FMs were successfully prepared and can achieve above-room-temperature ferromagnetism with perpendicular magnetic anisotropy via a facile chemical vapor deposition (CVD) method, which can be controlled down to an atomic thin layer of ∼3.4 nm. STEM-EDX quantitative analysis shows that the proportion of Cu to metal atoms is ∼5%. Moreover, based on the anomalous Hall effect (AHE) measurements in a six-terminal Hall bar device without any encapsulation as well as an out-of-plane magnetic field, the maximum Tc achieved ∼315 K when the thickness of the sample is ∼28.8 nm; even the ultrathin 7.6 nm sample possessed a near-room-temperature Tc of ∼275 K. Meanwhile, theoretical calculations elucidated the mechanism of the ferromagnetic enhancement of Cu-doped Cr7Te8 nanosheets. More importantly, the ferromagnetism of CVD-synthesized Cu-doped CrSe nanosheets can also be maintained above room temperature. Our work broadens the scope on room-temperature ferromagnets and their heterojunctions, promoting fundamental research and practical applications in next-generation spintronics.

Chern number transition of quantum anomalous hall phases in kagome TM3Te4 (TM = Ti, Cr) monolayers by manipulating magnetization orientation

The development of quantum anomalous hall (QAH) insulator with high transition temperature is the key to realize practical applications in future quantum technology and spintronics. Here, we predicted two stable two-dimensional kagome structures, Ti3Te4 and Cr3Te4, and found that both of them are intrinsic QAH insulators, using density functional theory calculations. In the absence of spin–orbit coupling (SOC), both systems display ferromagnetism (FM) Weyl semimetal states. Remarkably, Ti3Te4 monolayer is revealed to be a robust ferromagnetic half metal with high Curie temperature (TC) of 403 K. When the SOC effect occurs, it spontaneously creates QAH states with large nontrivial bandgap and chiral edge states. As a result, the Ti(Cr)3Te4 monolayer is changed to be QAH insulators with Chern number C = ±1 by rotation of magnetization orientation. In addition, the phase change from FM QAH insulator to antiferromagnetic insulator can be manipulated by applying external strains. Moreover, a high-Chern number phase (C = 2) arises by building Ti3Te4/MoS2/Ti3Te4 heterostructure. Meanwhile, the topological phase transition can be well recurred by using a spinless three-band tight-binding (TB) model. The findings present ways to realize potential QAH insulators with high transition temperatures.

Incommensurate Antiferromagnetic Order in Weakly Frustrated Two-Dimensional van der Waals Insulator CrPSe3.

Although magnetic order is suppressed by a strong frustration, it appears in complex forms such as a cycloid or spin density wave in weakly frustrated systems. Herein, we report a weakly magnetically frustrated two-dimensional (2D) van der Waals material CrPSe3. Polycrystalline CrPSe3 was synthesized at an optimized temperature of 700 °C to avoid the formation of any secondary phases (e.g., Cr2Se3). The antiferromagnetic transition appeared at TN ≈ 127 K with a large Curie-Weiss temperature θCW ≈ -301 K via magnetic susceptibility measurements, indicating weak frustration in CrPSe3 with a frustration factor of f (|θCW|/TN) ≈ 2.4. Evidently, the formation of a long-range incommensurate antiferromagnetic order was revealed by neutron diffraction measurements at low temperatures (below 120 K). The monoclinic crystal structure of the C2/m symmetry is preserved over the studied temperature range down to 20 K, as confirmed by Raman spectroscopy measurements. Our findings on the incommensurate antiferromagnetic order in 2D magnetic materials, not previously observed in the MPX3 family, are expected to enrich the physics of magnetism at the 2D limit, thereby opening opportunities for their practical applications in spintronics and quantum devices.

Effect of nano-size on magnetostriction of BiFeO3 and exceptional magnetoelectric coupling properties of BiFeO3_P(VDF-TrFE) polymer composite films for magnetic field sensor application

The existence of magnetostriction in bulk BiFeO3 is still a matter of investigation and it is also an issue to investigate the magnetostriction effect in nano BiFeO3. Present work demonstrates the existence of magnetostrictive strain in superparamagnetic (SPM) BiFeO3 nanoparticles at room temperature and the magnetoelectric (ME) coupling properties in composite form with P(VDF-TrFE). Despite few reports on the magnetostriction effect in bulk BiFeO3 evidenced by the indirect method, the direct method (strain gauge) was employed in this work to examine the magnetostriction of SPM BiFeO3. In addition, a high ME coupling coefficient was observed by the lock-in technique for optimized BiFeO3_P(VDF-TrFE) nanocomposite film. These nanocomposite films also exhibit room-temperature multiferroic properties. These results provide aspects of material with immense potential for practical applications in spintronics and magneto-electronics applications. We report a ME sensor using SPM BiFeO3_P(VDF-TrFE) nanocomposite film for detection of ac magnetic field.

Theoretical Analysis of Magnetic Coupling in the Ti2C Bare MXene.

The nature of the electronic ground state of the Ti2C MXene is unambiguously determined by making use of density functional theory-based calculations including hybrid functionals together with a stringent computational setup providing numerically converged results up to 1 meV. All the explored density functionals (i.e., PBE, PBE0, and HSE06) consistently predict that the Ti2C MXene has a magnetic ground state corresponding to antiferromagnetic (AFM)-coupled ferromagnetic (FM) layers. A spin model, with one unpaired electron per Ti center, consistent with the nature of the chemical bond emerging from the calculations, is presented in which the relevant magnetic coupling constants are extracted from total energy differences of the involved magnetic solutions using an appropriate mapping approach. The use of different density functionals enables us to define a realistic range for the magnitude of each of the magnetic coupling constants. The intralayer FM interaction is the dominant term, but the other two AFM interlayer couplings are noticeable and cannot be neglected. Thus, the spin model cannot be reduced to include nearest-neighbor interactions only. The Néel temperature is roughly estimated to be in the 220 ± 30 K, suggesting that this material can be used in practical applications in spintronics and related fields.

Above-Room-Temperature Ferromagnetism in Thin van der Waals Flakes of Cobalt-Substituted Fe5GeTe2

Two-dimensional (2D) magnetic van der Waals materials provide a powerful platform for studying the fundamental physics of low-dimensional magnetism, engineering novel magnetic phases, and enabling thin and highly tunable spintronic devices. To realize high-quality and practical devices for such applications, there is a critical need for robust 2D magnets with ordering temperatures above room temperature that can be created via exfoliation. Here, the study of exfoliated flakes of cobalt-substituted Fe5GeTe2 (CFGT) exhibiting magnetism above room temperature is reported. Via quantum magnetic imaging with nitrogen-vacancy centers in diamond, ferromagnetism at room temperature was observed in CFGT flakes as thin as 16 nm corresponding to 16 layers. This result expands the portfolio of thin room-temperature 2D magnet flakes exfoliated from robust single crystals that reach a thickness regime relevant to practical spintronic applications. The Curie temperature Tc of CFGT ranges from 310 K in the thinnest flake studied to 328 K in the bulk. To investigate the prospect of high-temperature monolayer ferromagnetism, Monte Carlo calculations were performed, which predicted a high value of Tc of ∼270 K in CFGT monolayers. Pathways toward further enhancing monolayer Tc are discussed. These results support CFGT as a promising platform for realizing high-quality room-temperature 2D magnet devices.

Reversible and Nonvolatile Manipulation of the Spin-Orbit Interaction in Ferroelectric Field-Effect Transistors Based on a Two-Dimensional Bismuth Oxychalcogenide

The spin-orbit interaction (SOI) offers a nonferromagnetic scheme to realize spin polarization through utilizing an electric field. Electrically tunable SOIs through electrostatic gates have been investigated; however, the relatively weak and volatile tunability limits their practical applications in spintronics. Here, we demonstrate the nonvolatile electric field control of the SOI via constructing ferroelectric Rashba architectures, i.e., two-dimensional ${\mathrm{Bi}}_{2}{\mathrm{O}}_{2}\mathrm{Se}/\mathrm{Pb}({\mathrm{Mg}}_{1/3}{\mathrm{Nb}}_{2/3}){\mathrm{O}}_{3}$-${\mathrm{PbTiO}}_{3}$ ferroelectric field-effect transistors. The experimentally observed weak antilocalization (WAL) cusp in ${\mathrm{Bi}}_{2}{\mathrm{O}}_{2}\mathrm{Se}$ films implies the Rashba-type SOI that arises from the asymmetric confinement potential. Significantly, taking advantage of the switchable ferroelectric polarization, the WAL-to-weak-localization-transition trend reveals the competition between spin relaxation and the dephasing process, and the variation of carrier density leads to a reversible and nonvolatile modulation of the spin-relaxation time and the spin-splitting energy of ${\mathrm{Bi}}_{2}{\mathrm{O}}_{2}\mathrm{Se}$ films by this ferroelectric gating. Our work provides a scheme to achieve nonvolatile control of the Rashba SOI with the utilization of ferroelectric remanent polarization.

Zeeman Effect in Centrosymmetric Antiferromagnetic Semiconductors Controlled by an Electric Field.

Centrosymmetric antiferromagnetic semiconductors, although abundant in nature, seem less promising than ferromagnets and ferroelectrics for practical applications in semiconductor spintronics. As a matter of fact, the lack of spontaneous polarization and magnetization hinders the efficient utilization of electronic spin in these materials. Here, we propose a paradigm to harness electronic spin in centrosymmetric antiferromagnets via Zeeman spin splitting of electronic energy levels-termed as the spin Zeeman effect-which is controlled by an electric field. By symmetry analysis, we identify 21 centrosymmetric magnetic point groups that accommodate such a spin Zeeman effect. We further predict by first principles that two antiferromagnetic semiconductors, Fe_{2}TeO_{6} and SrFe_{2}S_{2}O, are excellent candidates showcasing Zeeman splittings as large as ∼55 and ∼30 meV, respectively, induced by an electric field of 6 MV/cm. Moreover, the electronic spin magnetization associated to the splitting energy levels can be switched by reversing the electric field. Our Letter thus sheds light on the electric-field control of electronic spin in antiferromagnets, which broadens the scope of application of centrosymmetric antiferromagnetic semiconductors.

Intrinsic ferromagnetic Janus Cr2PAs monolayer with controllable magnetic anisotropy

Two-dimensional materials with intrinsic ferromagnetism, high Curie temperature and sizable magnetic anisotropy are promising candidates for the development of next-generation information technology. Based on first-principles calculations, we propose a new tetragonal Janus Cr2PAs monolayer, which is not only dynamically and thermally stable, but also shows ferromagnetism with a band gap of 0.718 eV. The predicted Curie temperature of Janus Cr2PAs monolayer is 794 K. Janus Cr2PAs monolayer exhibits an in-plane magnetic anisotropy of −0.260 meV/unit cell. Remarkably, the magnetization easy axis of Janus Cr2PAs monolayer changes from in-plane [100] to out-of-plane [001] direction with a critical hole doping at −0.6 e/unit cell. The perpendicular magnetic anisotropy increases with the further increase of hole concentration, it reaches up to 0.301 meV/As at concentration of −0.8 e/unit cell. The high Curie temperature and controllable magnetic anisotropy of Janus Cr2PAs monolayer make it a promising candidate for practical spintronic applications.

Magnetic Anisotropy Control with Curie Temperature above 400 K in a van der Waals Ferromagnet for Spintronic Device.

The technological appeal of van der Waals ferromagnetic materials is the ability to control magnetism under external fields with desired thickness toward novel spintronic applications. For practically useful devices, ferromagnetism above room temperature or tunable magnetic anisotropy is highly demanded but remains challenging. To date, only a few layered materials exhibit unambiguous ferromagnetic ordering at room temperature via gating techniques or interface engineering. Here, it is demonstrated that the magnetic anisotropy control and dramatic modulation of Curie temperature (Tc ) up to 400 K are realized in layered Fe5 GeTe2 via the high-pressure diamond-anvil-cell technique. Magnetic phases manifesting with in-plane anisotropic, out-of-plane anisotropic and nearly isotropic magnetic states can be tuned in a controllable way, depicted by the phase diagram with a maximum Tc up to 360 K. Remarkably, the Tc can be gradually enhanced to above 400 K owing to the Fermi surface evolution during a pressure loading-deloading process. Such an observation sheds light on the understanding and control of emergent magnetic states in practical spintronic applications.

Topological phase transition associated with structural phase transition in ternary half Heusler compound LiAuBi

In this article, we report detailed theoretical investigations of topological phases in non-centrosymmetric half Heusler compound LiAuBi up to a pressure of 30 GPa. It is found that the compound forms into a dynamically stable face-centered cubic (FCC) lattice structure of space group (216) at ambient pressure. The compound is topologically non-trivial at ambient pressure, but undergoes a quantum phase transition to trivial topological phase at 23.4 GPa. However, the detailed investigations show a structural phase transition from FCC lattice (space group 216) to a honeycomb lattice (space group 194) at 13 GPa, which is also associated with a non-trivial to trivial topological phase transition. Further investigations show that the compound also carries appreciable thermoelectric properties at ambient pressure. The figure of merit (ZT) increases from 0.21 at room temperature to a maximum value of 0.22 at 500 K. The theoretical findings show its potential for practical applications in spintronics as well as thermoelectricity, therefore LiAuBi needs to be synthesized and investigated experimentally for its applications.

First-principles study of the electronic and magnetic properties of monolayer CrOBr

Two-dimensional (2D) materials with intrinsic ferromagnetism, a sizable magnetic anisotropy energy (MAE) and large spin polarization are desirable for realizing the practical spintronic applications. Base on first-principles calculations, the stability, electronic and magnetic properties of monolayer CrOBr are systematically investigated. Monolayer CrOBr is ferromagnetic semiconductor with a band gap of 1.547 eV, it possesses in-plane magnetic anisotropy with a value of −0.017 meV/formula unit (f.u.). The band gap of monolayer CrOBr can be regulated in the range of 1.547-1.145 eV by applying biaxial tensile strain. Monolayer CrOBr changes from FM state to AFM state when tensile strain increases to 8%. The MAE of monolayer CrOBr reaches a large value of −0.057 meV/f.u. at tensile strain of 8%, which is enhanced by 235% compared to that of unstrained system. The tunable MAE and electronic structure indicate that monolayer CrOBr may be a promising candidate in spintronic devices.