Formaldehyde is a ubiquitous indoor pollutant. Developing metal oxide semiconductors gas sensors for selective ppb-level formaldehyde detection is challenging. Therefore, developing gas sensors that can selectively detect indoor formaldehyde at ppb levels is important. In this study, outer-walled thin sheet-like microspheres of Ga-doped In2O3 (GaxIn2-xO3, x = 0, 0.1, 0.2, 0.3, and 0.4) were fabricated using a facile two-step synthetic method. The Ga0.3In1.7O3 based sensor shows the response (556 ± 25) to 100 ppm formaldehyde at 80 °C, which is around 6.5 times that of the pure In2O3 based sensor at 90 °C. Furthermore, it has fast response time (< 3 s), excellent selectivity (SFormaldehyde/SEthanol = 160, SFormaldehyde/SAcetone = 267), good stability (at least 60 days), and ultra-low limit of detection (10 ppb) for formaldehyde at 80 °C. The improved formaldehyde sensing performance of Ga0.3In1.7O3 microspheres is attributed to the optimization of surface chemisorbed oxygen, which is caused by Ga doping regulating the Fermi level of In2O3 as well as an increase in the specific surface area.