Power Electronics Applications Research Articles

Silicon Carbide Microring Resonators for Integrated Nonlinear and Quantum Photonics Based on Optical Nonlinearities

Silicon carbide (SiC) electronics has seen a rapid development in industry over the last two decades due to its capabilities in handling high powers and high temperatures while offering a high saturated carrier mobility for power electronics applications. With the increased capacity in producing large-size, single-crystalline SiC wafers, it has recently been attracting attention from academia and industry to exploit SiC for integrated photonics owing to its large bandgap energy, wide transparent window, and moderate second-order optical nonlinearity, which is absent in other centrosymmetric silicon-based material platforms. SiC with various polytypes exhibiting second- and third-order optical nonlinearities are promising for implementing nonlinear and quantum light sources in photonic integrated circuits. By optimizing the fabrication processes of the silicon carbide-on-insulator platforms, researchers have exploited the resulting high-quality-factor microring resonators for various nonlinear frequency conversions and spontaneous parametric down-conversion in photonic integrated circuits. In this paper, we review the fundamentals and applications of SiC-based microring resonators, including the material and optical properties, the device design for nonlinear and quantum light sources, the device fabrication processes, and nascent applications in integrated nonlinear and quantum photonics.

A novel approach for improving the magnetic properties and reducing the power loss of FeSi3.5 composite at 200–500 kHz band

The easy-plane FeSi3.5 composite with excellent magnetic properties and power loss is proposed. The magnetic properties and power loss of the easy-plane FeSi3.5 composite are studied by using the none easy-plane FeSi3.5 composite as a control. This easy-plane FeSi3.5 composite has an initial permeability of 62, resonance frequencies of 100 MHz and 1.5 GHz, and frequency stability of 40 MHz. In addition, the easy-plane FeSi3.5 composite has also excellent loss properties, with a high-frequency power loss of only 108.12 kW/m3. The three kinds of power loss of the easy-plane FeSi3.5 composite are reduced compared with the none easy-plane FeSi3.5 composite through loss separation, especially the eddy current loss and the excess loss. The eddy current loss and the excess loss of the easy-plane FeSi3.5 composite are only 0.03 and 12.93 kW/m3 at 500 kHz, which reduce by 99.44% and 92% compared with the none easy-plane FeSi3.5 composite. Effective reduction of power loss and significant improvement of magnetic properties are important for solving the problem of power loss encountered by power electronic devices at the kHz band. Therefore, the application of the easy-plane FeSi3.5 composite with excellent power loss and high-frequency magnetic properties becomes a novel approach to meet the practical application of power electronics. The method that increases the working frequency and decreases the maximum magnetic flux density keeping the energy transformation efficiency constant is a new method to reduce power loss at the wide frequency band.

Design optimization of wide-gate swing E-mode GaN HEMTs with junction barrier Schottky gate

To increase the gate swing, a GaN-based high-electron-mobility transistor with a junction barrier Schottky gate (JBS-HEMT) was proposed. Compared to conventional p-GaN Schottky gate HEMTs (Conv-HEMT), the high electric field at the surface is transferred to the pn junction inside the body, and the extended depletion region of the pn junction shields the surface Schottky contact interface for the JBS-HEMT. After fitting the model to the reported device, the proposed JBS-HEMT was simulated and optimized using the Sentaurus TCAD tool. The simulation results of the optimized JBS-HEMT demonstrate a high gate breakdown voltage (17.6 V), which is 158.5% higher than the gate breakdown voltage of the Conv-HEMT (11.1 V) and a lower gate leakage current of six orders of magnitude than the Conv-HEMT at the gate-to-source voltage of 10 V. The proposed JBS-HEMT exhibits a positive threshold voltage (1.68 V) and excellent threshold voltage stability, and the maximum threshold voltage drift of the JBS-HEMT (+0.237 V) is smaller than that of the Conv-HEMT (−0.714 V) under gate stress conditions. The peak transconductance of the JBS-HEMT (186 mS mm−1) at athe drain-to-source voltage of 10 V showed almost no reduction compared to the Conv-HEMT (189 mS mm−1), which solves the problem of decreased transconductance capability of the reported GaN HEMT with a p-n junction gate (PNJ-HEMT). It was confirmed that the JBS-HEMT has excellent gate stability and potential for power electronics applications.

Ultra-strong bonding of 30-wt% GF/PET-A2024 aluminium alloy via collaborative promotion of ultrasonic-assisted FeCl3+N2H4 corrosion and the coordination bonds by Zr4+

Enhancing the bonding strength between metals and polymers is advantageous for hybrid structures used in aerospace and power electronics applications. This study, conducted for the first time, involves the preparation of multi-scale “honeycomb-meteorite crater” morphologies on the surface of A2024 aluminium alloy through a multi-step ultrasonic-assisted corrosion treatment. The ultrasonic-assisted FeCl3/N2H4 corrosion process increased the interfacial tensile shear strength of a 30-wt% glass fibre reinforced PET-A2024 aluminium alloy joint (expressed as 30-wt% GF/PET-A2024) to 32.0 MPa. Coating Zr4+ substantially enhances the hydrophilicity of the A2024 surface; however, the coordination bonding effect of Zr4+ can only be activated after prolonged heat treatment (100 °C, 3 h). With the combined effects of multi-scale mechanical interlocking and coordination bonding of Zr4+, the tensile shear strength of the 30-wt% GF/PET-A2024 joint can reach 56.5 MPa, surpassing existing works by a significant margin. Experimental results and Density Functional Theory (DFT) calculations demonstrate that the optimal concentration for Zr4+ treatment is 1.5 wt%. Excessive Zr4+ would lead to ion-dipole interactions, which diminish the interface bonding strength; when the concentration of Zr4+ is 2 wt%, The joint strength dropped sharply to 39.1 MPa. This study provides a comprehensive discussion on ultrasonic-assisted corrosion and the effect of Zr4+, offering valuable insights for future research aimed at enhancing the interfacial bonding strength between polymers and metals.

Boron Nitride Modified Superhydrophobic Anti‐icing Coating for Electrical Equipment Protection

AbstractAnti‐icing of superhydrophobic materials has attracted a lot of attention. The potential for applications in power electronics, transportation, engineering and other fields is enormous. However, in practical applications, the anti‐icing performance parameters of superhydrophobic materials are still far from meeting the engineering requirements. It is a feasible solution to modify superhydrophobic materials to assist surface deicing by combining the vibration and heat generated by equipment in actual engineering. In this study, conventional superhydrophobic materials are modified by h‐BN. The electrical properties are improved to meet the engineering requirements. At the same time, it reduces the ice adhesion at the interface and improves the thermal conductivity of the material. The modified material has the possibility of assisting in de‐icing in engineering applications. A feasible solution is found for the engineering interface ice‐covering problem.

Reduced trap state density in AlGaN/GaN HEMTs with low-temperature CVD-grown BN gate dielectric

In this Letter, low-temperature (400 °C) chemical vapor deposition-grown boron nitride (BN) was investigated as the gate dielectric for AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) on a Si substrate. Comprehensive characterizations using x-ray photoelectron spectroscopy, reflection electron energy loss spectroscopy, atomic force microscope, high-resolution transmission electron microscopy, and time-of-flight secondary ion mass spectrometry were conducted to analyze the deposited BN dielectric. Compared with conventional Schottky-gate HEMTs, the MISHEMTs exhibited significantly enhanced performance with 3 orders of magnitude lower reverse gate leakage current, a lower off-state current of 1 × 10−7 mA/mm, a higher on/off current ratio of 108, and lower on-resistance of 5.40 Ω mm. The frequency-dependent conductance measurement was performed to analyze the BN/HEMT interface, unveiling a low interface trap state density (Dit) on the order of 5 × 1011–6 × 1011 cm−2 eV−1. This work shows the effectiveness of low-temperature BN dielectrics and their potential for advancing GaN MISHEMTs toward high-performance power and RF electronics applications.

Development and Application of Modern Intelligent Control Theory

Modern intelligent control theory has experienced multi-stage development from classical control to fuzzy control, neural networks, and model predictive control, which not only improves the flexibility and adaptability of control systems but also promotes interdisciplinary research. With the advancement of science and technology and social development, intelligent control theory will be further combined with machine learning, big data, and other fields in the future to promote industrial automation and technological innovation. This article reviews the development history of modern intelligent control theory, its main theories, and its applications in robot manufacturing, power electronics, and other fields. It also discusses the current challenges and future development trends in the field of intelligent control.

Physical Properties of CaTiO3-Modified NaNbO3 Thin Films.

NaNbO3(NN)-based lead-free materials are attracting widespread attention due to their environment-friendly and complex phase transitions, which can satisfy the miniaturization and integration for future electronic components. However, NN materials usually have large remanent polarization and obvious hysteresis, which are not conducive to energy storage. In this work, we investigated the effect of introducing CaTiO3((1-x)NaNbO3-xCaTiO3) on the physical properties of NN. The results indicated that as x increased, the surface topography, oxygen vacancy and dielectric loss of the thin films were significantly improved when optimal value was achieved at x = 0.1. Moreover, the 0.9NN-0.1CT thin film shows reversible polarization domain structures and well-established piezoresponse hysteresis loops. These results indicate that our thin films have potential application in future advanced pulsed power electronics.

A Novel High-Gain Switched-Capacitor Multilevel Inverter with Reduced Components for Grid Integration

This paper introduces a novel Multi-Level Inverter (MLI) design which utilizes a single input and leverages capacitor voltages source to generate a four-fold increase in output voltage as the main problem that stays with the inverters is their low boost ability and efficiency while maintaining power quality at the same time. One capacitor is charged to match the input voltage magnitude, while the other two capacitors store twice this magnitude. Through a series-parallel combination with switching operations, all capacitors are effectively charged and discharged within each cycle, ensuring natural voltage balance. A comprehensive comparative analysis is conducted to highlight the advantages of this innovative approach, particularly in terms of component reduction and mitigation of voltage stress. Detailed assessment of power losses within the proposed circuit is undertaken, simulation studies are first carried out while extensive experimentation verifies its operational efficiency under diverse conditions such as varying modulation indices, loads, and supply-side fluctuations with an impressive maximum efficiency of 96.9 % at a 200 W power rating, our research contributes to advancing compact power converters, addressing crucial challenges in modern power electronics applications, and paving the way for enhanced performance and reliability in such systems.

Physico-chemical characterization of polyimide passivation layers for high power electronics applications

Silicon carbide (SiC) is a wide bandgap semiconductor suitable for high-voltage, high-power and high-temperature applications. However, the production of advanced SiC power devices still remains limited due to some shortcomings of the dielectric properties of the passivation layer. Thanks to their high operating temperature and dielectric strength, spin coated polyimide (PI) layers are considered ideal candidates for SiC devices passivation and insulation. In this view, a robust methodology for the physico-chemical characterization of such PI layers is required. Thanks to the use of time of flight-secondary ion mass spectrometry (ToF-SIMS), a SIMS-based surface-sensitive technique that provides specific identification of molecules, it was possible to distinguish different types of PIs employed in commercial SiC devices and postulate their molecular structure. This was obtained after careful selection of the analytical conditions used for the characterization of the specimens.The results attained in this study open the way for further improvements in one of the most key issues in the development of higher SiC power devices.

Ga2O3/NiO junction barrier Schottky diodes with ultra-low barrier TiN contact

Power Schottky barrier diodes (SBDs) face an inherent trade-off between forward conduction loss and reverse blocking capability. This limitation becomes more severe for ultra-wide bandgap (UWBG) SBDs due to the large junction field. A high Schottky barrier is usually required to suppress the reverse leakage current at the price of an increased forward voltage drop (VF). This work demonstrates a Ga2O3 junction barrier Schottky (JBS) diode that employs the embedded p-type NiO grids to move the peak electric field away from the Schottky junction, thereby allowing for the use of an ultra-low barrier TiN Schottky contact. This JBS diode concurrently realizes a low VF of 0.91 V (at forward current of 100 A/cm2) and a high breakdown voltage over 1 kV, with the VF being the lowest in all the reported vertical UWBG power diodes. Based on the device characteristics measured up to 200 °C, we further analyze the power loss of this JBS diode across a wide range of operational duty cycles and temperatures, which is found to outperform the TiN/Ga2O3 SBDs or NiO/Ga2O3 PN diodes. These findings underscore the potential of low-barrier UWBG JBS diodes for high-frequency, high-temperature power electronics applications.

Multi-DG qZSI based grid tied inverters

The increasing adoption of distributed generation (DG) systems, driven by their numerous advantages, has led to a growing utilization of hybrid systems. Multilevel converters have emerged as essential components in power electronics applications, offering benefits such as harmonic reduction. However, designing effective control strategies for multilevel inverters presents challenges. This paper proposes a multi-DG quasi-Z-Source Inverter (qZSI) designed with a cascaded H-bridge controller. The incorporation of qZSI in the system enhances reliability and component safety while enabling the implementation of additional shoot-through control. This feature facilitates the balancing of inequalities arising from the two DG sources, thereby improving disturbance rejection. Furthermore, a current control scheme is implemented on the AC side to seamlessly feed active power into the grid without introducing distortions in current injection. Overall, the proposed system addresses key challenges in multilevel inverter design and offers a promising solution for efficient and reliable grid integration of DG systems. This work is thus useful in variety of applications, including electric vehicles and environment sustainability.

Low-temperature deposition of β-Ga2O3 thin films employing in situ pulsed laser-assisted RF sputtering system

Monoclinic β-phase Ga2O3, the most thermodynamically stable phase, is an interesting material for power electronics applications. In this study, we present an efficient approach, diverging from existing methods, for the successful deposition of β-Ga2O3 thin films at low substrate temperatures without any post-annealing. Instead of relying on high substrate temperatures, we supplied sufficient thermal energy to the substrate by directly irradiating it with a 1064 nm ytterbium pulsed laser during RF sputtering. This eliminated the need for post-annealing and significantly reduced processing time. It also allowed for excellent control over the crystal structure and crystallinity formation of the thin films by providing excellent particle energy through heat transfer on the surface. The X-ray diffraction (XRD) scan of the sample deposited by irradiating a pulse laser to the substrate shows only three peaks corresponding to (−201), (−402) and (−603) of β-Ga2O3, indicating superior crystalline quality. The sample deposited at 2.5 mTorr working pressure maintained a thin film thickness of 207 nm and a grain size of 40.07 nm, and the energy band gap of the thin films was measured in the range of 4.45–4.64 eV. XPS, Auger, and PL optical analysis observed characteristic core-level peaks of β-Ga2O3 and the suppression of oxygen vacancies due to the high binding energy. The oxygen content increased by 4.39 %, resulting in the O/Ga ratio rising to 1.19, which leads to a positive shift in the O 1s binding energy. Consequently, we demonstrated the induction of phase transition of Ga2O3 into a stable β phase by introducing an in-situ pulse laser process during low temperature RF sputtering. These results have significant potential in various applications and are expected to contribute significantly to technological advancements.

Low-loss carrier stored trench-gate bipolar transistor with split-gate optimization

In the conventional carrier stored trench-gate bipolar transistor (CSTBT) device, a lower conduction voltage drop (Von) can be achieved with higher carrier stored (CS) layer dosage. However, the trench bottom is weakened leading to easier breakdown under high electrical field. In this work, the trench-gate structure of the conventional CSTBT is optimized and split into three components. The bottom and top left components of the split trench structure are equipotential with the emitter, which effectively eliminated the impact of collector on the trench gate with reduced gate charge (Qgc). In addition, another n-type CS layer is formed adjacent to the emitter to further enhance the hole carrier storage effect near emitter. This improves the trade-off between Von and turn-off time (Toff) without breakdown voltage (BV) degradation. The simulation results show that in comparison with the conventional CSTBT, the proposed device exhibits 64.6% reduction in Qgc under the same Von, while the turn-off time (Toff) and the saturation current are reduced by 14.9% and 43.4%, respectively. The short-circuit capability is also studied with 2.83 times improvement. Our proposed device shown here provides a feasible and attractive approach for advanced high-performance power electronics applications.

Epitaxial trench refill of 4H-SiC by chlorinated chemistry

Trench epitaxy of 4H-SiC is investigated with the supersaturation of chlorinated chemistry at a growth temperature of 1550 °C. Coupled with a lower growth temperature than has been previously reported, the integrity of the 4H-SiC trenches is retained and minimal rounding effects of H2 annealing prior to growth are observed. The system gives different growth rates of materials on the various crystal faces of the trenches and can be used to improve the refilling process, resulting in the reduced void formation. The addition of excessive levels of HCl can suppress trench epitaxy by reducing the growth rate on the sidewalls of trenches in favor of growth on the surface. The processes demonstrated offer a scalable and reproducible method to fabricate SiC-based superjunction device structures for applications in high voltage power electronics.

GaN HEMT and Air Core Magnetics based Power Converters Evaluations at Cryogenic Temperature

Cryogenic power electronics is both advantageous and indispensable in many applications, like deep space probe, military electric vehicle, magnetic resonance imaging etc. Among different semiconductors, the gallium nitride (GaN) high electron mobility transistor (HEMT) is the most promising candidate for cryogenic applications with significant conduction loss and switching loss reductions. Moreover, there is no carrier freeze out effect for the GaN HEMTs, which is applicable in extreme low temperature operating conditions. In this work, the efficiency of GaN HEMTs based power converters with different power levels (from several Watts to several kiloWatts) are evaluated at cryogenic temperature. Three different commercial GaN HEMTs are used in these power converters, including the Texas Instruments LMG5200 80 V GaN half-bridge power stage with integrated gate driver, the GaN Systems 650 V bottomcooled GaN HEMT GS66516B, and the 650 V top-cooled GaN HEMT GS66516T from GaN Systems. Moreover, two different cryogenic power converter evaluation methods (cryogenic chamber and liquid nitrogen channeled through cold plate) are investigated. Three of these power converters are evaluated by using a cryogenic chamber and such that the converter operating environment temperature can be regulated. One of the power converters is evaluated by using liquid nitrogen (LN2) channeled through a cold plate, where the gate driver can be designed to operate at non-cryogenic temperatures to ensure the safe operation of the system. Due to the degraded performance of conventional magnetic components, air core magnetics are used in these power converters to improve the converter efficiency. Efficiency improvements at cryogenic temperature are observed for all the GaN HEMTs and air core magnetics based power converters, which are promising for cryogenic power electronics applications.

The growth and characterization of Au-catalyzed gallium oxide nanowires

AbstractGallium oxide is a powerful and versatile wide band gap semiconductor, which has been gaining scientific interest in recent years due to its applications in power electronics. In this work, the growth of β-gallium oxide (Ga2O3) nanowires has been achieved by the vapor–solid–liquid method on silicon wafer, fused quartz, and gallium oxide thin-film substrates. In a chamber purged of ambient atmosphere, pure gallium was heated to produce gallium vapor, which was then oxidized by minute oxygen impurities in the backing gas to form gallium oxide nanowires on a substrate, inside a vertical tube furnace. On the silicon wafer substrates, β-Ga2O3 nanowires were observed to grow in a specific crystallographic direction via transmission electron microscopy. The resulting nanowires were highly faceted and had a unique polyhedral structure on the gold catalyst ‘cap’ of the nanowire. Time of growth and oxygen-level studies were conducted on nanowires grown on various substrates. Graphical abstract

Antiferroelectricity of titanite-type oxide SrTiGeO5 and its potential for power electronics applications

Antiferroelectric materials have recently received renewed attention due to the increased demand for energy-storage ceramics and power electronics applications. This study demonstrates antiferroelectricity in a titanite-type oxide, SrTiGeO5, through direct observation of a double D-E hysteresis loop by polarization measurements. Temperature dependence of dielectric permittivity shows a cusp around 550 K, indicating a relatively high antiferroelectric phase transition temperature for SrTiGeO5. It is suggested that an electric-field-induced rise of permittivity in SrTiGeO5 has the potential for application in protective circuits of power electronics devices. The present study paves the way for the development of innovative antiferroelectric applications.

GaN-HEMT Performance Enhancement

In this work, a simulation analysis and calibration are carried out to improve the performance of AlGaN/GaN- MOSHEMTs (Metal-Oxide Semiconductor High Electron Mobility Transistors). The effect of the AlGaN layer thickness, gate length, Al mole fraction, and the interface traps on the electrical performance of the device has been presented. Device simulations have been done using Sentaurus technology computer-aided design (TCAD). The simulations and analysis show better drain current, transconductance, and cut-off frequency performance. The maximum cut-off frequency shown by the proposed HEMT device is 45.7 GHz at 100-nm gate length. Good transcoductance has been obtained by scaling down the gate length of the device, which is ascribed to the present two-dimensional electron gas (2DEG) density that supports upgrading the output current. Higher drain current is achieved without using acceptor-like traps in the Al2O3/AlGaN interface. Results show that the Al2O3/AlGaN/GaN-based MOSHEMT is a promising device for high-frequency and power electronic applications.

Ultrafast Self‐Powered Ti–Zn–N Photodetector‐Based Optocoupler for Power Electronics Applications

This study presents an early exploration into the application of a self‐powered photodetector based on titanium zinc nitride (TiZnN) films in power electronics, aiming to overcome inherent limitations of conventional optocouplers such as low switching speed and specific operating voltage requirements. The fabricated device demonstrates excellent performance metrics, including photosensitivity of 136, the responsivity of 3.22 mA W−1 at −8 V bias, and a peak detectivity of 1.76 × 108 Jones at 0 V bias. Remarkably, ultrafast rise (τs) and decay times (τd) of 0.11 and 0.10 ms, respectively, are achieved, alongside broad‐band spectral absorption characteristics. Experimental validation showcases the efficacy of the TiZnN‐based optocoupler in practical applications, notably in power electronics triggerable relay systems and AC–AC converters. Leveraging the self‐powering capability inherent to the TiZnN photodetector, this optocoupler eliminates external power source dependencies, thereby enhancing its versatility and applicability in diverse electronic systems. The rapid response time of the device and broad spectral absorption further underscore its suitability for high‐speed signal transmission across varied operating conditions. This research paves a path for developing stable, cost‐effective, and self‐powered ultrafast optocouplers, eliminating concerns about compromising electrical signal transit. These advancements hold significant implications for enhancing electronic system performance, reliability, and functionality in critical applications.