Post-annealing Temperature Research Articles

Synthesis and surface engineering of carbon-modified cobalt ferrite for advanced supercapacitor electrode materials

The precise design and surface modification of electrode materials are crucial challenges for advancing the supercapacitor technology. In this study, we report a straightforward two-step process for the synthesis of a cobalt ferrite (CoFe2O4)/carbon hetero nanostructure. The CoFe2O4 nanoparticles were first synthesized using a simple chemical oxidation method, followed by carbon modification using glucose. The modified samples were calcined at 400 and 600 °C for 4 h in N2 atmosphere to optimize the structural and electrochemical properties.. The increase in the grain size of carbon modified cobalt ferrite magnetic nanoparticles (MNPs) was observed from 22 to 28 nm with post annealing temperature. The presence of carbon was confirmed by the FTIR spectroscopy, FESEM and TEM analyses. The carbon decoration on the cobalt ferrite partially showed a core–shell like morphology. The saturation magnetization of bare cobalt ferrite was observed to be 76 emu/g and the same was decreased by the surface modification with carbon. A high specific capacitance of 323 F/g was observed for the carbon-modified cobalt ferrite MNPs annealed at 600 °C. The electrochemical impedance spectroscopy (EIS) analysis demonstrated that the charge-transfer resistance (Rct) decreased significantly in the carbon-modified CoFe2O4 MNPs, particularly for the sample annealed at 600 °C, with an Rct value of 17 Ω. The carbon layer effectively enhanced conductivity and reduced the electrode/electrolyte interface, led to the improved electrochemical performance, as reflected in the enhanced specific capacitance. An improved capacitance retention of 84 % was achieved in the case of carbon-modified cobalt ferrite MNPs based electrode even after 4000 cycles. The study suggested that the prepared carbon-modified cobalt ferrite MNPs stand in the limelight as a better candidate electrode material for the electrochemical applications.

Influence of Annealing Temperature on the OER Activity of NiO(111) Nanosheets Prepared via Microwave and Solvothermal Synthesis Approaches.

Earth-abundant transition metal oxides are promising alternatives to precious metal oxides as electrocatalysts for the oxygen evolution reaction (OER) and are intensively investigated for alkaline water electrolysis. OER electrocatalysis, like most other catalytic reactions, is surface-initiated, and the catalyst performance is fundamentally determined by the surface properties. Most transition metal oxide catalysts show OER activities that depend on the predominantly exposed crystal facets/surface structure. Therefore, the design of synthetic strategies to obtain the most active crystal facets is of significant research interest. In this work, rock salt NiO OER catalysts with (111) predominantly exposed facets were synthesized by a solvothermal (ST) method either heated under supercritical or microwave-assisted (MW) conditions. Particular emphasis was placed on the influence of the post annealing temperature on the structural configuration and OER activity to compare their catalytic performances. The as-prepared electrocatalysts are pure α-Ni hydroxides which were converted to rock salt NiO (111) nanosheets with hexagonal pores after heat treatment at different temperatures. The OER activity of the electrodes has been evaluated in 0.1 M KOH using geometric and intrinsic current densities via normalization by the disk area and BET area, respectively. The lowest overpotential at a geometric current density of 10 mA/cm2 is found for samples pretreated by heating between 400 and 500 °C with a catalyst loading of 115 μg/cm2. Despite the very similar nature of the catalysts obtained from the two methods, the ST electrodes show a higher geometric and intrinsic current density for 500 °C pretreatment. The MW electrodes, however, achieve an optimal geometric current density for 400 °C pretreatment, while their intrinsic current density requires pretreatment over 600 °C. Interestingly, pretreated electrodes show consistently higher OER activity as compared to the poorly crystalline/less ordered hydroxide as-prepared electrocatalysts. Thus, our study highlights the importance of the synthesis method and pretreatment at an optimal temperature.

Effect of hydrogen sulfide concentration on two-dimensional SnS2 film by atomic layer deposition in annealing process

Two-dimensional materials are widely studied due to its unique physical, optical, electrical properties, and good compatibility with various synthesis methods. And among the many fabrication methods, tin disulfide (SnS2) material, a two-dimensional (2D) material that can be achieved with accurate thickness control using atomic layer deposition (ALD), high uniformity and conformality even at low process temperatures is attracting attention. However, since the crystallinity of the thin film is low at a low process temperature, various post-annealing methods are being studied to compensate for film quality. In this work, we compared the crystal structures, chemical binding energies, and electrical properties of the thin films by post-annealing SnS2thin films according to the hydrogen sulfide concentrations of 4.00% and 99.99% in the hydrogen sulfide atmospheres. The crystallinity, grain size, and carrier concentrations of the SnS2thin film were the highest at a post-annealing temperature of 350 °C at a hydrogen sulfide concentration of 99.99%, and the chemical binding energies also corresponded with the standard Sn4+states, forming a pure 2D-hexagonal SnS2phase. In addition, SnS2thin films deposited via ALD showed high uniformity and conformality in large-scale wafers and trench structure wafers.

Enhanced photoelectrochemical CO2 reduction activity towards selective generation of alcohols over CuxO/SrTiO3 heterojunction photocathodes

Photoelectrochemical reduction (PECR) of CO2 to value-added chemicals and fuels will reduce the dependency on fossil fuels, also it will solve environmental issues that arise due to greenhouse gases. A heterojunction of CuxO/SrTiO3 with varying post-annealing temperature ranges from 300 to 600 °C (CS300-600) was synthesized by overlying the spin-coated SrTiO3 on electrodeposited Cu2O over the FTO glass substrate. The synthesized photoelectrode's crystallinity and phase formation significantly varied by varying the post-annealing temperature, which was characterized via XRD and Raman spectroscopy. Optical, morphological, type of heterojunction formation and elemental surface oxidation states of photoelectrodes were studied through UV–visible DRS spectrum, FE-SEM, and XPS analysis respectively. Electrocatalytic analysis such as Linear Sweep Voltammetry (LSV), and Electrochemical Impedance Spectrometry (EIS) was employed, thus it conforms to the highest photocurrent density (−1.38 mA/cm2 at −0.6V vs. Ag/AgCl), and low charge transfer resistance (RCT=0.412 kΩ) at the electrode-electrolyte interfaces for CS500 photoelectrode as compared to others photoelectrodes. PECR of CO2 to liquid product formation was evaluated by applying different potential ranges (0 to −0.6 V vs. Ag/AgCl). Highest methanol formation of 48.69 μmol.cm−2hr−1, which is approximately 9 times enhanced as compared to the pure Cu2O (5.62 μmol.cm−2hr−1) photoelectrode at 0 V vs Ag/AgCl for CS500 heterojunction. Optimization of overlaying SrTiO3 synthesis temperature for crystallization formation on Cu2O and applied photoelectrode potential findings could pave the way for designing other new heterojunction types for selective liquid alcohol production.

Synthesis of titanium-vanadium oxide thin films through thermal oxidation process for their use in CO gas sensing application

The thermal oxidation of evaporated titanium-vanadium thin films was carried out at different post-annealing temperatures. The structural, morphological, compositional, optical, electrical, and gas sensing properties of titanium-vanadium oxide thin films were primarily investigated. The results of the XRD study and Raman spectroscopy verified the presence of the orthorhombic V2O5, tetragonal TiO2, and monoclinic V2Ti3O9 phases. The crystallinity of TVO thin films was improved at higher annealing temperatures. The grain size (seen from SEM images) and oxygen compositions (obtained from EDS measurement) of TVO samples are also enhanced when the post-annealing temperature is increased from 500 to 575 °C. From the transmittance curves, the bandgap values for TVO samples were estimated and found in the range of 2.14–2.36 eV. The n-type conductivity of TVO films was confirmed by the negative Hall coefficient values. At last, the CO gas sensing response of TVO thin films was analyzed by monitoring the change in the surface electrical resistances at different operating temperatures and CO gas concentrations. The dynamic and static resistances were assessed at different operating temperatures varying from 100 to 300 °C. The TVO sample prepared at 550 °C showed the best conditions by examining the materials and CO sensing properties.

Effect of Post-annealing Temperature on Microstructural, Morphological and Optical Properties of Sol–gel Spin Coated Cu Doped SnO2 Thin Films

Effect of Post-annealing Temperature on Microstructural, Morphological and Optical Properties of Sol–gel Spin Coated Cu Doped SnO2 Thin Films

Investigation of thermally induced surface composition and morphology variation of magnetron sputtered Sb2Se3 absorber layer for thin film solar cells

One of the most promising semiconductor materials for the development of sustainable thin-film solar cell technology is antimony selenide (Sb2Se3). Its excellent optical and electrical properties have drawn attention lately for potential application in thin-film solar cells. In this study, Sb2Se3 films deposited using the direct current (DC) magnetron sputtering technique have been subjected to a post-annealing process without an extra selenium supply at temperatures between 150 and 450 °C. Without an extra selenium supply, the impact of post-annealing temperature on the surface composition as well as the physical properties of the fabricated films was investigated. The overall evaluations revealed that the post-annealing temperature is highly efficient in altering the physical properties of the Sb2Se3 absorber thin films. We further observed that the post-annealing process improved the crystallization and the heat treatment temperature quite affected preferential orientation. The surface morphology of films exhibited structural deformation at high post-annealing temperatures (> 350 °C). According to optical and electrical characterizations, respectively, the optical energy gap and the resistivity of Sb2Se3 films reduced with an increment in the post-annealing temperature. Based on the XPS result, the variation in temperature of post-annealing led to a change in the surface composition of the films. The findings on the growth of Sb2Se3 thin films indicate the existence of an intermediate growth temperature that permits the growth of Sb2Se3 films to be optimized. The study’s conclusions can serve as a guide to the growth of Sb2Se3 thin films with the desired crystallinity, surface morphology, and composition for thin film solar cell applications.

Optimization of Post-Annealing Temperature of RF Magnetron-Sputtered ZnO Thin Films for Enhancing Performances of UV Photodetectors

In this study, we examined the surface morphology and crystal structure of RF-sputtered ZnO thin films that were annealed at various temperatures. Also, we fabricated UV photodetectors with an Au-ZnO-ITO sandwich structure, utilizing the thin films annealed at 600 °C. The surface roughness of the film initially increases and then decreases as the annealing temperature rises, and the crystalline quality improves with an increase in the annealing temperature. Due to the Schottky heterojunction formed by the Au-semi contact, the fabricated UV photodetector exhibits a responsivity of 7.91 mA W−1 under 405 nm UV light. And the device demonstrates high response stability and rapid response sensitivity, with a swift rise time of 80 ms at a light intensity of 2.56 mW cm−2.

Solution-processed wide band gap transparent conducting Sr0.94La0.06SnO3 films

Pseudo-cubic perovskite La-doped SrSnO3 has been proposed as a promising alternative for ultra-violet (UV) transparent conductors due to its favorable electrical transport properties and UV transparency. However, the difficulty in fabricating large-size La-doped SrSnO3 films with high electrical mobility continues to hinder the development of practical applications. In this work, Sr0.94La0.06SnO3 (SLSO) thin films with wide bandgap of ∼4.5 eV were fabricated by using solution deposition route. Emphasis was placed on creating oxygen-poor environments and selecting appropriate post-annealing temperatures, which were determined based on the kinetic energy of relevant defects and second-phase impurities. Post-annealing treatment was applied to refine the microstructure and enhance electrical transport properties. As a result, a relatively high carrier mobility of 25.9 cm2 V−1 s−1 and a low resistivity of 1.15 mΩ cm at a carrier concentration of 2.08 × 1020 cm−3 were achieved. Enhanced electrical properties were attributed to the increased presence of oxygen vacancies, as confirmed by electron paramagnetic resonance results. This study presents a straightforward approach for the production of large-scale epitaxial UV transparent conducting SLSO thin films.

Structural and optical study of RF-magnetron sputtering SnO2 thin films: impact of post annealing temperature

Tin oxide (SnO2) thin films are prepared using radio frequency magnetron sputtering (RF) method and then annealed at different temperatures in the range of 550–750 °C for 1 h. The effects of annealing temperature on the structural and optical properties of the films are investigated using x-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and spectrophotometer. It is evident that the annealed films have flat surface with smooth morphology. Based on the XRD graph, as deposited films were amorphous and the annealed films had polycrystalline nature and contain the SnO2 tetragonal rutile phase. According to Raman spectra, the annealed films revealed three vibration modes Eg, A1g and B2g at the frequencies of Sn-O bond vibrations, which related to the SnO2 phase. The samples exhibit an average optical transmittance with more than 80 % between 400 − 700 nm. The refractive index values were in the range of 0.9-2.4 at visible wavelength. It is found that with increasing annealing temperature the films become more transparence while the refractive index and the extinction coefficient increased. The optical band gap energy decreases with increasing annealing temperature that means that the optical quality of annealed films is improved.

Enhanced electrical performance in graphene field-effect transistors through post-annealing of high-k HfLaO gate dielectrics

High-k gate dielectrics have attracted a great deal of attention in the investigation of transistors due to their unique properties such as superior gate controllability. However, their integration into graphene field-effect transistors (GFETs) remains problematic and the physical mechanisms governing the performance of these devices are still not fully understood. In this study, the effects of post-annealing on GFETs utilizing the high-k HfLaO ternary oxide as the gate dielectric were comprehensively investigated. The HfLaO film was deposited on top of graphene by magnetron sputtering, and the device performance with various post-annealing temperatures was conducted. It was found that post-annealing temperature can effectively increase the dielectric constant through balancing the oxygen-vacancy defects and moisture absorption. Both the surface morphology of HfLaO and performance of GFETs were investigated, and the fabricated GFETs exhibit notable electrical performance enhancements. Specifically, GFETs with a 200 °C post-annealed HfLaO gate dielectric demonstrate the optimal device performance, featuring a minimal Dirac point voltage (VDirac) of 1.1 V and a minimal hysteresis (ΔVDirac) of 0.5 V. The extracted hole and electron mobilities are 4012 and 1366 cm2/V · s, respectively, nearly one order of magnitude higher than that of GFETs with as-deposited HfLaO. This work outperforms other existing GFETs utilizing high-k gate dielectric and chemical vapor deposition grown graphene in terms of both carrier mobility and on–off ratio. It is also noted that the excessive post-annealing temperature can negatively impact the GFET performance through introducing oxygen vacancies, increasing the surface roughness, lowering the breakdown voltage, and inducing recrystallization.

Large-scale fabrication of thulium iron garnet film with perpendicular magnetic anisotropy using RF magnetron sputtering

Large-scale fabrication of thulium iron garnet (TmIG) films on gadolinium gallium garnet (GGG) substrates, with a total area of 25 cm2, has been demonstrated by rotating substrate holders during on-axis sputtering. By optimizing the growth parameters based on the pressure and flow rate of the oxygen ratio, a Tm/Fe ratio of 0.65 was obtained, which is close to the stoichiometry of TmIG. The increase in post-annealing temperature has induced the growth of the TmIG structure by the strain of the lattice constant mechanism. At the highest post-annealing temperature, the crystal structure of TmIG (444) and the perpendicular magnetic anisotropy (PMA) were obtained. This result demonstrates the potential method for large-scale fabrication of TmIG film with PMA.

Tuning the Topo-Morphological properties of ITO Films using Al-Ag interlayer for Low-Resistance Optoelectronics Devices

Indium tin oxide (ITO) is recently attracting intense attention for application as transparent conducting electrode in different optoelectronic devices including solar cells, liquid crystal displays and organic light emitting diodes. This is attributed to their high optical transmittance in the visible region and good electrical conductivity. In this work, surface topological-morphological (topo-morphological) and electrical properties of ITO based multilayer films with aluminum-silver (Al-Ag) metal interlayer (ITO/Al-Ag/ITO) are investigated after post annealing treatment at 300-500oC by atomic force microscopic (AFM), field emission scanning electron microscopy (FESEM), four-point probe and hall-effect techniques respectively. The ITO/Al-Ag/ITO films are deposited by direct current and radio frequency magnetron sputtering techniques on p-type Si at room temperature. The results showed a smooth surface topology by as-deposited film with films smoothness improving after post annealing treatment as analyzed by AFM method. Sharp crystallites peaks were obtained by all the films with smaller peaks diffusing and recombining to form larger films with increasing post-annealing temperature. The films root means square roughness increased as the temperature increases with film annealed at 500oC showing a superior and enhanced microstructure. Compared to as-deposited film, careful observation shows that surface morphology smoothness increased with increase in temperature with films annealed at 400oC and 500oC showing highest increasing surface smoothness pattern as determined by FESEM technique. Similarly, higher grain sizes are observed especially by films annealed at 400oC and 500oC due to the heat absorption which causes the particles to expand thereby narrowing the grain boundaries and subsequently improve the surface smoothness. These FESEM findings are consistent with AFM measurements confirming the high surface property and enhanced grain size with increasing post annealing temperature. The films exhibit decreased electrical resistivity and sheet resistance while carrier concentration and Hall mobility increased with increasing post annealing treatment indicating highest corresponding values of...

X-ray peak broadening analysis of Bougainvillea glabra assisted ultrasonic exfoliation of h-BN sheets

In this study, h-Boron Nitride (h-BN) nanosheets have been successfully exfoliated using Bougainvillea flower extract and ultrasonication process. The microstructural parameters such as microstrain, stress, and energy density were calculated using Williamson–Hall analysis. The time of ultrasonication and post-annealing temperature significantly alter the microstructure parameters such as crystal size, microstrain, stress, and energy density upon sonication. The lattice constants such as a-axis and c-axis, cell volume, and bond length did not alter significantly which confirms that there is no crystal structure deformation upon sonication and annealing processes. FESEM result revealed that exfoliation of h-BN and ultrasonication duration greatly influenced the exfoliation. Raman and FTIR studies confirm the pure phase of h-BN without secondary impurities. A simple ultrasonication process would effectively exfoliate h-BN layers and this could be used for tribological applications to reduce the friction between rubbing surfaces.

Realization of CO2 gas sensors and broadband photodetectors using metal/high-k CeO2/p-Si heterojunction

Realization of high-k dielectric oxide material-based devices such as photodetectors (PDs)/gas sensors fabricated on silicon substrate seems to be the utmost promising as a cost-effective approach to use in next generation optoelectronic field. We have explored metal/CeO2/p-Si heterojunction to construct as a broadband (BB) PD and CO2 gas sensor device. The effect of post-annealing procedure on photodetection and CO2 gas sensing characteristics were correlated using AFM, XRD, XPS, Raman and UV–Vis studies. At 0 V bias, the fabricated as-deposited Au/CeO2/p-Si PD device exhibits outstanding performance with enhanced responsivity of 85 AW−1 (at 910 nm), detectivity of 1.36×1015 Jones (at 850 nm), EQE of 1.3×104 % (at 850 nm), faster rise and fall times of 124 ms and 107 ms (at 900 nm). On the other hand, the photodetection characteristic parameters were slightly deteriorated as a function of annealing with respect to the as-deposited device. One of the causes for this fact was attributed to the increase in rms surface roughness (AFM) and decrease in absorbance of CeO2 thin film (UV–Vis). Additionally, Ag/CeO2/p-Si heterojunction was studied as a CO2 gas sensor and evaluated response/recovery times as a function of CO2 gas concentration. Sensing responses of CeO2 as-deposited, CeO2-400, CeO2-500, CeO2-600 and CeO2-700 °C were around 58, 60, 62, 81 and 90 %, respectively, when exposed to 200 ppm of CO2. Thus, we validate that the prospect of integrating enhanced performance in BB PDs and CO2 gas sensors using metal/CeO2/p-Si heterojunction could serve as a basic building block in near future optoelectronic applications. Furthermore, the effect of post-annealing temperature on the morphological, structural, BB photodetection and CO2 gas sensing properties were discussed in detail.

Impact of post-annealing temperature on the structure, surface topography and magnetic properties of sputtered GdMnO3 thin films

Impact of post-annealing temperature on the structure, surface topography and magnetic properties of sputtered GdMnO3 thin films

Tuning of interface quality of Al/CeO2/Si device by post-annealing of sol-gel grown high-k CeO2 layers

A comprehensive study has been done on the influence of post-deposition annealing temperature on high-k cerium oxide (CeO2) layer grown on n-type silicon (Si) substrate and its resultant interface states have been studied for Al/CeO2/Si metal-oxide-semiconductor (MOS) devices. The high-k CeO2 thin films were deposited by spin-coating and sintered at different annealing temperatures (Ta) in the range of 400–900 °C. The parameters such as fixed charge density (Qeff), dielectric constant (k) of the layers, flat-band voltage (VFB), interface defect density (Dit), etc., of the MOS device were evaluated from CV and I-V measurements. A minimum value of flat band shift (∼0.05 V) with lower Qeff (−4.81 × 1011 C/cm2) have been achieved for the Ta of 600 °C. The k and Dit were evaluated to be 22 and 1.29 × 1012 cm−2, respectively at the Ta of 600 °C. In addition, the CV measurements showed a very small hysteresis and very low frequency dispersion for the Ta of 600 °C sample. Energy distribution of defect states was evaluated and it was maximum towards the bottom of the conduction band. This shows that the 600 °C is the optimum annealing temperature, which results in high quality interface, and the electron affinity of the corresponding CeO2 layers was found to be 3.29 eV as evaluated from ultraviolet photoelectron spectroscopy (UPS). Further, a maximum value of minority carrier lifetime (147 μs) has been achieved for the samples annealed at Ta of 400 °C, indicating that the post-annealing temperature plays a significant role on the properties of CeO2 films deposited by sol-gel process. Thus, the present study demonstrates the possibility of sol-gel grown high k-CeO2 layers suitable for MOS like devices.

Combined effects of substrate temperature and post annealing temperature on structural, optical and electrical properties of Sb-doped SnO2 films

Sb-doped SnO2 (ATO) films have received extensive attention as transparent conductive films, but there is still a lack of in-depth and systematic study on combined effects of substrate temperature (Ts) and annealing temperature (Ta) on their transparent conductive properties. In this study, ATO films were prepared using RF magnetron sputtering at RT∼400 ℃ and subsequently annealed at 200–1000 ℃. The results show that the conductive properties of the films enhance (with a decrease in resistivity from 1.15×10-1 to 2.15×10-3 Ω•cm) and the average visible-light transmittance (TVis) decreases (90.16 → 38.24%) with increase of Ts. With the increase of Ta, the conductive properties of the films prepared at different Ts tend to first enhance and then degrade, and the TVis basically shows a trend of first decreasing and then increasing. After annealing at 600 ℃, the films prepared at RT and 100 ℃ can achieve better comprehensive properties (resistivity of 2.50×10-3 and 1.64×10-3 Ω•cm, carrier concentration of 3.35×1020 and 4.93×1020 cm-3, mobility of 7.73 and 7.76 cm2/V•s, sheet resistance of 84 and 55 Ω/sq., and TVis of 86.63 and 79.50%). In order to explore the intrinsic mechanism of the optical and electrical performance of ATO films changing with Ts and Ta, the preferred orientation, crystallinity, and stress state of the films were analyzed by XRD, and their surface morphology was observed by SEM. Meanwhile, the chemical states of Sn, O and Sb as well as Sb content in the films were analyzed by XPS, and their lattice vibration modes of the film were studied by Raman spectra. Finally, the process-structure-properties correlations were established for the ATO films.

Microstructure, dielectric, ferroelectric and piezoelectric properties of K0.45Na0.45Li0.1NbO3 lead-free ceramics prepared via cold sintering with post-annealing

Via the method of cold sintering with post-annealing, the lead-free ceramics [Formula: see text][Formula: see text][Formula: see text]NbO3 were prepared. The cold sintered pellet without post-annealing shows a relative density ([Formula: see text] of 77.9%, which is larger than [Formula: see text] of the green pellet via the conventional solid-state sintering (SSS) method ([Formula: see text]). The cold sintered pellets were post-annealed at temperatures between [Formula: see text]C and [Formula: see text]C. The effect of post-annealing temperatures on microstructure, dielectric, ferroelectric and piezoelectric properties of the ceramics was studied in detail. After being post-annealed, the relative densities and grain sizes of the ceramics were increased. The ceramics post-annealed at [Formula: see text]C show excellent dielectric, ferroelectric and piezoelectric properties. Compared to the conventional SSS method, the method of cold sintering with post-annealing is successful in preparing dense [Formula: see text][Formula: see text][Formula: see text]NbO3 lead-free ceramics in a wide temperature range and at relatively low temperatures.

Optimizing thermoelectric performance of BiSbPbTe thin films through controlled post-annealing: A comprehensive structural and electronic study

This study investigates the structural and electronic properties of BiSbPbTe thin films, focusing on the impact of post-annealing time and temperature. The X-ray diffraction (XRD) analysis reveals a stable rhombohedral phase formation in all samples, with no secondary phases detected within the detection limit. The high crystallinity of the films is confirmed, and post-annealing leads to an increase in peak intensity, indicating enhanced crystalline structure. Surface morphology analysis using scanning electron microscopy (SEM) demonstrates a transition from inhomogeneous features in as-grown films to homogeneous and dense formations in post-annealed films. The grain size increases with post-annealing time, attributed to diffusion, energy minimization, nucleation, growth, and thermal activation processes. The electronic transport properties, including carrier concentration and conductivity, are influenced by post-annealing temperature and duration. A stable carrier concentration is observed for films post-annealed for up to 2 h, while longer durations decrease due to reduced defect vacancies and grain boundaries. The increase in charge carrier mobility, confirmed by SEM results, contributes to enhanced electrical conductivity. The Seebeck coefficient shows an initial enhancement up to 2 h post-annealing, attributed to defect creation and increased grain boundaries. However, further increases in post-annealing duration result in a decrease in the Seebeck coefficient due to enhanced charge carrier mobility and reduced grain boundaries. The thermoelectric power factor (4.4 μW/cm1K2), determined by the square of the Seebeck coefficient and electrical conductivity, reaches its maximum value in the 2-h post-annealed sample, emphasizing the importance of optimizing post-annealing conditions for improved thermoelectric performance.