Polarization Electric Field Research Articles

Tuning Self-Polarization of Epitaxial BiFeO3 Thin Films through Interface Effects.

Interface effects and strain engineering have emerged as critical strategies for modulating polarization and internal electric fields in ferroelectric materials, playing a vital role in exploring coupling mechanisms and developing ferroelectric diode devices. In this study, we selected BiFeO3 as a representative ferroelectric material and utilized interface engineering to control its polarization. By precisely manipulating the atomic stacking sequence at the interface, we influenced the electrostatic potential step across the interface, resulting in a bias voltage in the ferroelectric hysteresis loops that defined the ferroelectric state. The introduction of strain and strain gradients through a lattice mismatch between the film and substrate generated a flexoelectric field of approximately 3 MV/m, significantly impacting the internal electric field. Additionally, we successfully modified the Schottky barrier height within BiFeO3 films through the synergy and competition between interfacial and flexoelectric effects. This work expands the potential applications of thin-film flexoelectricity in Schottky diodes, sensors, and memory devices.

Sol-gel fabrication of transparent ferroelectric (K,Na)NbO3/La0.06Ba0.94SnO3 heterostructure

Lead-free K0.5Na0.5NbO3 (KNN) ferroelectric film and transparent La0.06Ba0.94SnO3 (LBSO) bottom electrode are fabricated on (001)-oriented SrTiO3 (STO) substrate by sol-gel. The characterization results confirm an epitaxial relationship between the films and the substrate, as well as a uniform structure and good crystallization quality of the films. The optical measurement shows that the film heterostructure exhibit a high transmittance with a maximum transmittance of ∼80%. The polarization-electric field (P-E) curves demonstrate that the twice remanent polarization value of the ∼500 nm thick KNN film reaches up to 28 μC/cm2 under an electric field of 800 kV/cm, and the effective piezoelectric strain constant (d33*) is measured as 24.8 pm/V. The dielectric properties of the film are displayed, and the leakage behavior can be divided into three stages of Ohmic conduction, Schottky emission and Poole-Frenkel emission with increasing the applied electric field. This study indicates that transparent lead-free ferroelectric KNN heterostructures can be prepared using a cost-effective sol-gel method and shows promise for future applications.

Observation of sporadic [formula omitted] layer altitude partially modulated by the Traveling Ionospheric Disturbances at high latitudes over Zhongshan station

At Zhongshan (69° S, 76° E) Antarctica we investigate the sporadic E (Es)-layer virtual height modulation, observed by an ionosonde, during the passage of the Medium-Scale Traveling Ionospheric Disturbances (MSTIDs), observed by a SuperDARN radar. Two events were identified, on 04 October 2011 at 07:00 - 12:00 UT and 29 February 2012 at 00:00 - 04:00 UT with periods of ∼15.0 and ∼12.0 min, respectively. The magnitude of average height modulation of the Es-layer was ∼3.7 to ∼17.1 and ∼0.5 to ∼7.3 km, respectively, with the same periods as the MSTIDs. Ray tracing during the events shows that the likely MSTID propagation was up to ∼300 km in the ionospheric F-region. The computed ion vertical drift velocity using SuperDARN radar and magnetometer data, and Es-layer altitude modulation observed by the ionosonde have moderate to strong positive correlation of 0.71 ± 0.22 and 0.51 ± 0.16, respectively. We show that the MSTIDs polarization electric field, which is mapped down from the F-region along the near-vertical magnetic field, moderately contributes to the modulation of the Es layer altitude via the E×B drift mechanism.

Optimization of Structural, Dielectric, and Electrical Properties in Lead-free Ba0.85Ca0.15Zr0.1Ti0.9O3 through site engineering for Biocompatible Energy Harvesting

Piezoelectric energy harvesting has recently gained attention due to its high power density and potential for self-powered sensor networks. This study investigates the effects of dopants on Ba0.85Ca0.15Zr0.1Ti0.9O3 (BCZT) ceramics, examining Strontium (Sr2+), Zinc (Zn2+), and praseodymium (Pr3+/4+) ions at different sites and their impact on structural, dielectric, and electrical properties. X-ray diffraction and Rietveld analysis reveal a coexistence of tetragonal and rhombohedral/orthorhombic phases, with a predominant tetragonal phase, confirmed by Raman analysis. Energy-dispersive X-ray spectroscopy ensures chemical homogeneity. The density measurements indicate a dense microstructure with a relative density of 90-95%. Dielectric analysis shows a relaxor-like behavior in AB-site doped BCZT ceramics, validated by polarization-electric field hysteresis loops. B-site doped BCZT ceramics exhibit ultra-low leakage currents, approximately 103 times lower than undoped BCZT. An optimized biocompatible flexible film-based energy harvester, incorporating A-site doped BCZT ceramic particles, demonstrated impressive energy harvesting capabilities. A simple finger tapping generated ~80.2V and ~18.2nA, with an average peak-to-peak power density of 7.6 µW-cm-3. These results highlight the significant potential of dopant inclusion in BCZT ceramics, marking a major advancement in doping strategies for piezoelectric energy harvesting in miniature electronics.

High-efficient U(VI) removal from organic wastewater through polarization electric field enhanced photocatalysis with In2Se3@Ag3PO4 heterojunction

Effective catalytic methods and catalysts for the simultaneous removal of coexisting organic pollutants and heavy metal ions are crucial for sustainable and environmentally friendly water purification. Herein, flower-like S-scheme In2Se3@Ag3PO4 heterojunctions were synthesized by a two-step hydrothermal method for simultaneous removal of uranium (VI) (U(VI)) and organic pollutants using piezo-photocatalysis. Characterization and theoretical calculations confirmed the formation of the heterojunction, highlighting the significance of InO and SeP bonds in the S-scheme for enhancing photocatalytic reactions by improving charge carrier separation and migration. Additionally, the piezoelectric polarization electric field can also improve photocatalytic performance. The optimized In2Se3@Ag3PO4–3 catalyst demonstrated superior piezo-photocatalytic performance in synergistically removing U(VI) and degrading organics, such as tetracycline (TC), bisphenol A (BPA), carbamazepine (CBZ), levofloxacin (LVX), and norfloxacin (NOR). Particularly, in the presence of TC, the catalyst achieved 98.7 % U(VI) removal, and 94.1 % TC degradation within 30 min. This study introduces a promising strategy and a novel heterojunction catalyst with dual functional properties for the simultaneous treatment of wastewater containing organic pollutants and U(VI).

Atomic-Level Electric Polarization in Entropy-Driven Perovskites for Boosting Dielectric Response.

Dielectric oxides with robust relaxation responsesare fundamental for electronic devices utilized in energy absorption, conversion, and storage. However, the structural origins governing the dielectric response remain elusive due to the involvement of atomically complex compositional and structural environments. Herein, configurational entropy is introduced as a regulatory factor to precisely control the structural heterogeneity in representative perovskite dielectric oxides. Through advanced structural and electric field visualization studies, a novel quantitative relationship is established between atomic-level structural disorder-induced electric field polarization and macroscopic dielectric properties. The results indicate that the degree of atomic delocalization in perovskite oxides exhibits a near-parabolic trend with increasing entropy, reaching a maximum in medium-entropy perovskite. Correspondingly, the atomic electric field vectors display significant asymmetrical distribution, thus greatly enhancing angstrom-scale electric field polarization. Then, it is experimentally proven that entropy-driven electric polarization can improve the dielectric relaxation behavior characterized by broader frequency and stronger intensity of electromagnetic energy absorption, with improvements of approximately 160% and 413% compared to structurally homogeneous control. This study unveils the quantitative correlation between angstrom-scale electric field polarization and dielectric response in perovskite oxides, offering a novel perspective for exploring the structure-propertyrelationship in dielectric materials.

Superior Energy-Storage Performances under a Moderate Electric Field Achieved in Antiferroelectric-like Na0.5Bi0.5TiO3-Based Relaxor Ferroelectric Ceramics by a Synergistic Optimization Strategy.

The progress of power systems and electronic devices promotes the development of lead-free dielectric energy-storage material. Particularly, Na0.5Bi0.5TiO3-based ferroelectric ceramics featuring large spontaneous polarization as well as wide dielectric adjustability and stability are highly recognized as promising candidates. However, their large remanent polarization (Pr) and low electric breakdown strength (Eb) result in unsatisfactory recoverable energy density (Wrec) and/or energy conversion efficiency (η), severely restricting their energy-storage applications. Herein, an effective synergistic optimization strategy has been proposed to gain superior energy-storage performances. Interestingly, the antiferroelectric-like (AFE-like) (1 - x)(Na0.3Bi0.38Sr0.28TiO3)-xBi(Mg0.5Zr0.5)O3 (x = 0.00, 0.05, 0.10, 0.15, and 0.20) relaxor ferroelectric (RFE) ceramics were constructed via the phase structure, the polar structure, and the defect dipole modulations. With Bi(Mg0.5Zr0.5)O3 increasing, the slim and pinched polarization-electric field hysteresis (P-E) loops become remarkably similar to the double-like P-E loops characterized by AFEs. Meanwhile, the strengthened Eb and delayed polarization saturation were also realized due to the enlarged band gap, refined grain size, and reduced free energy barrier. Consequently, superior energy-storage performances were achieved in this work. Noticeably, a large Wrec of 5.00 J/cm3 and a high η of 90.09% were realized in 0.85(Na0.3Bi0.38Sr0.28TiO3)-0.15Bi(Mg0.5Zr0.5)O3 RFE ceramics at a moderate electric field of 340 kV/cm. Additionally, excellent energy-storage and/or charge-discharge reliabilities in frequency (1-500 Hz), temperature (20-140 °C), and fatigue cycle (1-50,000) were confirmed. These satisfactory results not only indicate the promising prospects of 0.85(Na0.3Bi0.38Sr0.28TiO3)-0.15Bi(Mg0.5Zr0.5)O3 RFE ceramics in the dielectric energy-storage field but also verify the effectiveness of the synergistic optimization strategy proposed in this work.

A Wide-Angle and PON Fully Polarimetric Retrodirective Array at the X Band

A new type of fully polarimetric retrodirective array (RDA) using a PON-type structure is proposed in this paper. The fully polarimetric property is the result of the proposed phase conjugation circuits, which perform phase conjugation processing on the x, y, and z polarization electric field components of the incident wave when combined with a tri-polarized antenna array. It enables the retrodirective array to receive and retransmit an arbitrary polarized incident wave. The measured results of the monostatic radar cross-section (RCS) show that the −5 dB beam width of the array was greater than 95° at 9.6 GHz for different polarized incident waves. Furthermore, the proposed RDA has better retrodirectivity performance on arbitrary polarized incident waves when using a wide-beam antenna, and if we further incorporate modulation and demodulation into the circuits, it has the potential to be applied to the wireless communications field.

Enhanced energy storage performance in BaZrxTi1–xO3 lead-free ferroelectrics near phase transitions

The present study explores the energy storage properties of BaZrxTi1-xO3through phase-field modeling, focusing on the impact of composition and temperature on energy storage performance. The obtained results reveal a variety of polarization phases and configurations based on Zr compositions and temperatures. A detailed phase diagram for temperature-composition of BaZrxTi1-xO3is established, closely aligning with experimental measurements. Variations in Zr content and temperature have a significant impact on the polarization-electric field (P - E) response, influencing the energy storage properties. Calculations of energy storage properties are derived from theP - Eresponse. In addition, a thorough diagram is developed to illustrate the discharge energy density of BaZrxTi1-xO3as a function of temperature and composition. Notably, high discharge energy density is achievable near the Curie temperature, corresponding to the transition from ferroelectric to paraelectric phase. Furthermore, the present study emphasizes the importance of the disparity between maximum and remanent polarization, as well as the electric field-dependent effective permittivity, in determining the discharge energy density.

Effect of bionic shield texture on friction behavior of silicon carbide under water lubrication condition

Abstract Reasonable texture parameters can effectively generate local dynamic pressure effects and promote the formation of lubrication film. The synergistic friction reduction mechanism of the shield-shaped texture on the Silicon Carbide (SiC) surface under water-based lubrication conditions between the flow pressure effect and the ‘rolling ball’ effect is investigated by combining simulation analysis and friction experiments. The effects of shield textured surface on the friction and wear characteristics of SiC surface and the characteristics of interfacial polarization electric field under different rotational speeds and different load conditions were analyzed. The results display that synergistic texture lubrication has a beneficial effect on improving tribological properties. The surface with 6% texture area occupancy showed the best tribological characteristics. The surface with a textured area occupancy of 6% displays the optimal tribological properties. Moreover, the friction reduction mechanisms under different working conditions are discussed, with the textured uniformly arranged surfaces being more suitable for high-speed and heavy load (140 N, 2000 rpm) conditions and the textured non-uniformly arranged surfaces being more suitable for low-speed and light load (40 N, 400 rpm) conditions.

Simultaneous achievement of high energy storage density and ultrahigh efficiency in BCZT-based relaxor ceramics at moderate electric field

The development of high-performance energy storage dielectric materials is the key to the development of large capacity ceramic capacitor. How to obtain the high energy storage density and efficiency of dielectric materials is the basis. Ba0.85Ca0.15Zr0.1Ti0.9O3 (BCZT) has high energy storage potential as a typical piezoelectric material, but it shows poor energy storage properties due to low breakdown electric field and large remnant polarization. In this work, we propose a combined optimization strategy aimed at enhancing the comprehensive energy storage performance of BCZT-based ceramics through doping with bismuth-based oxides. The diverse phase morphology offers substantial potential for modifying the electrical properties of BCZT-based ceramics. Electrical homogeneity is markedly improved with the incorporation of Bi2/3(Al1/2Nb1/2)O3 (BAN), which is accompanied by a reduction in long-range ferroelectric phases and the emergence of polar nanoregions. Ultimately, optimal BCZT-xBAN ceramics with x = 0.09 exhibit superior energy storage performances (Wrec ∼ 3.71 J/cm3, η ∼ 94.54 %) under moderate electric fields. Furthermore, BCZT-0.09BAN ceramics demonstrate commendable fatigue endurance, frequency stability, and temperature stability characteristics; notably achieving an ultrafast discharge rate of t0.9–14.6 ns alongside excellent discharge properties (CD ∼ 1278.66 A/cm2, PD ∼ 191.80 MW/cm3, WD ∼ 1.57 J/cm3).

The impact of barrier modulation on carriers transport in GaN quantum well infrared detectors

GaN quantum well infrared detectors are affected by the epitaxy process and the polarization electric field within the quantum well, making it difficult to fabricate actual devices and regulate their performance. This study utilized the APSYS software to build a transport model for GaN quantum well infrared detectors. Based on the optimal quantum well structure GaN/Al0.8Ga0.2N with an absorption peak wavelength around 1550 nm, the modulation of barrier width is used to elucidate the control of E1 energy level in the quantum well, as well as the variation patterns of absorption spectra for quantum well intersubband transitions(ISBT) and polarization electric fields. Under the influence of polarization electric fields, the devices exhibit completely opposite changes in current when subjected to positive and negative biases, respectively. By using Gauss transient spectroscopy, the influence of triangular barriers on the photoelectron transport on the E1 energy level was investigated, and it was determined that the optimal barrier width is 3 nm. At this width, the device exhibits the fastest relaxation within the well and transport between wells. By analyzing the AC impedance, the equivalent circuit of the device was obtained and the rationality of the circuit structure was demonstrated.

All-optical manipulation of bandgap dynamics via coherent phonons

The ability to actively and dynamically control electronic states at ultrafast timescales opens up a wide range of potential applications across optoelectronics, quantum computing and sensing, energy conversion and storage, etc. Yet, achieving dynamic electronic manipulation via coherent phonons has posed a considerable challenge. Here, employing time-resolved high-harmonic generation (tr-HHG) spectroscopy, we demonstrate the manipulation of bandgap dynamics in a BaF2 crystal by coherent phonons. The tr-HHG spectrum perturbed by a triply degenerate phonon mode T2g exhibits simultaneously a remarkable two-dimensional (2D) sensitivity, i.e., in both intensity and energy domains. The dynamic compression and enhancement of the harmonics in the intensity domain showed a π/2 phase shift compared to the manifestation of shifts of the harmonics in the energy domain, an astounding example of a physical phenomenon being observed simultaneously in two different perspectives. We employed a quantum model incorporating the electron–phonon coupling to complement our experimental observations, successfully reproducing the results. In addition, we demonstrated complete control over the strength and initial phase of the coherent phonon oscillations by varying the incident electric field polarizations across different crystal orientations. Our findings lay a foundation for engineering the electronic structure through coherent phonons within the terahertz frequency and picosecond to nanosecond time regimes.

Giant Charge Separation-Driving Force Together with Ultrafluent Charge Transfer in TiO2/ZnFe-LDH Photoelectrode via Ferroelectric Interface Engineering.

Hydrogen fuel production using photoelectrochemical (PEC) water-splitting technology is incredibly noteworthy as it provides a sustainable and clean method to alleviate the energy environmental crisis. A highly rapid electron shuttle at the semiconductor/WOC (water oxidation cocatalyst) interface is vital to improve the bulk charge transfer and surface reaction kinetics of the photoelectrode in the PEC water-splitting system. Yet, the inevitably inferior interface transition tends to plague the performance enhancement on account of the collision of hole-electron transport across the semi/cat interface. Herein, we address these critical challenges via inserting ferroelectric layer BTO (BaTiO3) into the semi/cat interface. The embedded polarization electric field induced by ferroelectric BTO remarkably pumped hole transfer at the semiconductor/WOC (TiO2/ZnFe-LDH) interface and selectively tailored the electronic structure of LDH surface-active sites, leading to overwhelmingly improved surface hole transfer kinetics at LDH/electrolyte interface, which minish the electron-hole recombination in bulk and on the surface of TiO2. The TiO2 nanorods encapsulated by ferroelectric-assisted ZnFe-LDH achieve 105% charge separation efficiency improvement and 53.8% charge injection efficiency enhancement compared with pure TiO2. This finding offers a strategic design for electrocatalytic-assisted photoelectrode systems by ferroelectric-pumped charge extraction and transfer at the semiconductor/WOC interface.

Point-defect-induced electronic polarization to enhance H* generation for removal of bisphenol A

Intrinsic point defects in metal core-shell materials can regulate electron redistribution, thereby reducing catalytic energy barriers and enhancing their ORR activity. However, their specific contributions to electron transfer and mass transport pathways remain unclear. In this study, defect-rich hollow OCo@Co3O4 nanoparticles were successfully synthesized using ZIF-67(Co) as a sacrificial template through controlled annealing and internal electric field substitution reactions. High-resolution electron microscopy analysis and density functional theory (DFT) calculations co-revealed the growth mechanism of Co and O vacancies, as well as antisite defects. The formation of oxygen vacancies significantly lowered the energy barrier for Co vacancy formation, playing a crucial bridging role in the development of antisite defects. The electric field polarization induced by Co-O atomic displacement resulted in asymmetric charge distribution, optimizing the adsorption of active hydrogen (H*) and oxygen atoms and facilitating the generation and release of reactive oxygen species (ROS). Electrocatalytic experiments demonstrated that under the combined action of singlet oxygen (1O2) and H*, bisphenol A (BPA) can be efficiently degraded. This study successfully bridges the knowledge gap between atomic defects and advanced electrocatalysis, providing a new perspective and insight for the in-depth analysis of the structure-performance relationship of electrocatalyst materials in the future.

Rational design of ZnO/SrTiO3 S-scheme heterojunction for photo-enhanced piezocatalytic hydrogen production

Photopiezocatalysis have been frequently investigated for hydrogen evolution reactions in recent years. Herein, ZnO, SrTiO3 and ZnO/SrTiO3 S-scheme heterojunction were investigated for photo/piezocatalytic hydrogen production. Piezocatalytic hydrogen production under ultrasonic vibration by using ZnO, SrTiO3 and ZnO/SrTiO3 was obtained as 270 µmol g-1h−1, 200 µmol g-1h−1 and 1265 µmol g-1h−1, respectively. In addition, ZnO/SrTiO3 S-scheme heterojunction showed 2200 µmol g-1h−1 photopiezocatalytic hydrogen production under simultaneous exposure to white LED light and ultrasonic sound. ZnO/SrTiO3 heterojunction displayed significantly higher hydrogen production rate due to the decreased charge recombination, increased charge transfer with strong piezoelectric polarization and internal electrical field. The piezoelectric effect of ZnO/SrTiO3 heterojunction is also confirmed by piezoresponse force microscope technique with butterfly and phase hysteresis loops. Also, piezoelectric coefficient of ZnO/SrTiO3 found about 2-folds higher than those of their pristine forms. Electron transfer and reaction mechanism of ZnO/SrTiO3 and activity differences are confirmed by advanced optical and electrochemical techniques such as diffuse reflectance spectroscopy, electronic impedance spectroscopy, Mott-Schottky calculation and chronoamperometry. The whole electrochemical measurements have been performed with or without mechanical stress and light irradiation, which signify their band bending properties, electron transfer mechanism and catalytic activities.

Effect of Low Electric Field Polarization Condition on Properties of Cement-based Piezoelectric Ceramic Composite

Effect of Low Electric Field Polarization Condition on Properties of Cement-based Piezoelectric Ceramic Composite

Dual electric field and defect engineering induced multi-channel electron transfer for boosting photocatalytic hydrogen production on Cu2+-doped ZnMoO4/ZnIn2S4 heterojunction

Serious recombination of photogenerated carriers is the bottleneck problem of achieving high-performance photocatalytic reaction. A high efficient Cu2+-doped ZnMoO4/ZnIn2S4 (CZMOZIS) heterojunction was synthesized by hydrothermal method. The CZMOZIS heterostructure achieved hydrogen production of 11637.5 µmol g−1 within 5 h, which was 9.7 times higher than that of pure ZnIn2S4. Comprehensive characterization and theoretical calculation demonstrated that the CZMOZIS composites exhibited broad light absorption, an increased specific surface area and an optimized Gibbs free energy. The presence of oxygen vacancies in CZMOZIS composites was confirmed by X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy, revealing the formation of defect levels below the conduction band (CB) of ZnMoO4. Kelvin probe force microscopy (KPFM) and Zeta potential demonstrated that the intrinsic electric field (IEF) of the CZMOZIS heterojunction was enhanced, which may be attributed to the generation of polarization electric field (PEF). The double electric field provided a robust driving force for the photogenerated carrier migration and separation. The electrons in the CB and defect levels of Cu2+-ZnMoO4 could be coupled with the holes of ZnIn2S4, thereby forming a multi-channel electron transfer. This work provides a theoretical support for promoting charge transfer to improve photocatalytic performance by dual electric field and defect engineering.

The coupling effect of polarization and lattice strain on charge transfer between quintuple-layer Al2X3/Al2Y3 (X, Y = O, S, Se, Te; X ≠ Y) interfaces

The electronic properties of two-dimensional (2D) polar semiconductor heterostructures are closely related to the degree of interlayer charge transfer. Taking 2D quintuple-layer (QL)-Al2S3 and QL-Al2O3 semiconductor as examples, we study the electronic properties and interlayer charge transfer of QL-Al2S3/Al2O3 interfaces by first-principles calculations. The driving force of the directional interlayer charge transfer is the polarization electric field. The kinetic process of interface charge transfer is related to the charge (strain) distribution of QL-Al2S3 and QL-Al2O3. By changing the strain distribution of QL-Al2S3/Al2O3 interfaces with same polarization arrangement, the electronic properties and interfacial charge transfer of heterojunctions can be adjusted. Our work is an important indicator for understanding the dynamic process of interlayer charge transfer between 2D polar semiconductors. In addition, we propose one method for regulating the electronic properties of heterojunctions by coupling polarization and lattice strain.

Superior Piezoelectric Performance in Textured CaBi2Nb2O9 Ferroelectric Ceramics through Rare-Earth Gadolinium Doping and Spark Plasma Sintering.

High-performance piezoelectric ceramics with excellent thermal stability are crucial for high-temperature piezoelectric sensor applications. However, conventional fabrication processes offer limited enhancements in piezoelectric performance. In this study, we achieved a significant breakthrough in the piezoelectric performance of highly textured CaBi2Nb2O9 (CBN) ceramics by incorporating rare-earth gadolinium doping and utilizing spark plasma sintering. The resulting Ca0.97Gd0.03Bi2Nb2O9 (CBN-3Gd) ceramics exhibited superior piezoelectric properties, with a high piezoelectric constant d33 of 26 pC/N and a high Curie temperature TC of 946 °C. We employed piezoresponse force microscopy (PFM) to observe the morphology and dimensions of the ferroelectric domains, revealing a rod-shaped 3D domain configuration. This configuration facilitated polarization rotation in the textured ceramics, as analyzed using X-ray photoelectron spectroscopy (XPS) and polarization-electric field (P-E) hysteresis loops. Furthermore, the textured CBN-3Gd ceramics demonstrated exceptional thermal stability and reliability. The piezoelectric constant d33 decreased by only 11.8% over a temperature range of room temperature to 500 °C, and the DC electrical resistivity remained at 6.7 × 105 Ω cm at 600 °C. This work not only highlights the great potential of textured CBN-based ceramics for high-temperature piezoelectric sensors but also provides a viable strategy for enhancing the performance of piezoelectric materials with large aspect ratio micromorphology.