Polarization-sensitive Photoresponse Research Articles

Polarization-sensitive photoresponse in few-layer ZrSe3 photodetectors

Polarization-sensitive photoresponse in few-layer ZrSe3 photodetectors

Low-symmetry layered semiconductor In2Te5 for promising polarization-sensitive photodetector

Low-symmetry two-dimensional (2D) materials have attracted significant attention for polarization-sensitive photodetection due to the optoelectronic anisotropy. Here, we demonstrated the strong in-plane anisotropy of In2Te5 through electron density distribution calculations based on density functional theory and developed a polarization-sensitive photodetector. The photodetector shows a responsivity of 171.16 mA/W and a response time of 0.42 s under visible light illumination. Additionally, it presents a polarization-sensitive photoresponse with a dichroic ratio of 1.34. Our work reveals the anisotropic optoelectronic properties of In2Te5, potentially stimulating research interest in Group III-VI 2D materials (Pentatelluride M2Te5, M = Al, Ga, In, etc.).

Symmetry-Reduction Enhanced Polarization-Sensitive Photoresponse Based on One-Dimensional van der Waals Materials.

Designing high-performance polarization-sensitive photodetectors is essential for photonic device applications. Anisotropic one-dimensional (1D) van der Waals (vdW) materials have provided a promising platform to that end. Despite significant advances in 1D vdW photonic devices, their performance is still far from delivering practical potential. Herein, we propose the design of high-performance polarization-sensitive photodetectors using unique 1D vdW materials. By leveraging the chemical vapor transport technique, we successfully fabricate high-quality 1D vdW Nb2Pd1-xSe5 (x = 0.29) nanowires. The 1D vdW Nb2Pd1-xSe5 photodetector exhibits a high mobility of ∼56 cm2/(V s) and superior photoresponse performance, including a high responsivity of 1A/W and an ultrafast response time of ∼8 μs under 638 nm illumination. Moreover, the 1D vdW Nb2Pd1-xSe5 photodetector demonstrates excellent polarization-sensitive photoresponse with a degree of linear polarization (DOLP) up to 0.85 and can be modulated by adjusting the gate voltage, laser power density, and wavelength. Those exceptional performance are believed to be relevant to the symmetry-reduction induced by the partial occupation of Pd sites. This study offers feasible approaches to enhance the anisotropy of 1D vdW materials and the modulation of their polarization-sensitive photoresponse, which may provide deep insights into the physical origin of anisotropic properties of 1D vdW materials.

Polarization Reversal of Group IV-VI Semiconductors with Pucker-Like Structure: Mechanism Dissecting and Function Demonstration.

Polarization imaging presents advantages in capturing spatial, spectral, and polarization information across various spectral bands. It can improve the perceptual ability of image sensors and has garnered more applications. Despite its potential, challenges persist in identifying band information and implementing image enhancement using polarization imaging. These challenges often necessitate integrating spectrometers or other components, resulting in increased complexities within image processing systems and hindering device miniaturization trends. Here, the characteristics of anisotropic absorption reversal are systematically elucidated in pucker-like group IV-VI semiconductors MX (M=Ge, Sn; X=S, Se) through theoretical predictions and experimental validations. Additionally, the fundamental mechanisms behind anisotropy reversal in different bands are also explored. The photodetector is constructed by utilizing MX as a light-absorbing layer, harnessing polarization-sensitive photoresponse for virtual imaging. The results indicate that the utilization of polarization reversal photodetectors holds advantages in achieving further multifunctional integration within the device structure while simplifying its configuration, including band information identification and image enhancement. This study provides a comprehensive analysis of polarization reversal mechanisms and presents a promising and reliable approach for achieving dual-band image band identification and image enhancement without additional auxiliary components.

Low symmetric sub-wavelength array enhanced lensless polarization-sensitivity photodetector of germanium selenium

Polarization-sensitive photodetectors, with the ability of identifying the texture-, stress-, and roughness-induced light polarization state variation, displace unique advantages in the fields of national security, medical diagnosis, and aerospace. The utilization of in-plane anisotropic two-dimensional (2D) materials has led the polarization photodetector into a polarizer-free regime, and facilitated the miniaturization of optoelectronic device integration. However, the insufficient polarization ratio (usually less than 10) restricts the detection resolution of polarized signals. Here, we designed a sub-wavelength array (SWA) structure of 2D germanium selenium (GeSe) to further improve its anisotropic sensitivity, which boosts the polarized photocurrent ratio from 1.6 to 18. This enhancement comes from the combination of nano-scale arrays with atomic-scale lattice arrangement at the low-symmetric direction, while the polarization-sensitive photoresponse along the high-symmetric direction is strongly suppressed due to the SWA-caused depolarization effect. Our mechanism study revealed that the SWA can improve the asymmetry of charge distribution, attenuate the matrix element in zigzag direction, and the localized surface plasma, which elevates the photo absorption and photoelectric transition probability along the armchair direction, therefore accounts for the enhanced polarization sensitivity. In addition, the photodetector based on GeSe SWA exhibited a broad power range of 40 dB at a near-infrared wavelength of 808 nm and the ability of weak-light detection under 0.1 LUX of white light (two orders of magnitude smaller than pristine 2D GeSe). This work provides a feasible guideline to improve the polarization sensitivity of 2D materials, and will greatly benefit the development of polarized imaging sensors.

Dielectric Contrast Tailoring for Polarized Photosensitivity toward Multiplexing Optical Communications and Dynamic Encrypt Technology.

A selective-area oxidation strategy is developed to polarize high-symmetry 2D layered materials (2DLMs). The dichroic ratio of the derived O-WS2/WS2 photodetector reaches ∼8, which is competitive among state-of-the-art polarization photodetectors. Finite-different time-domain simulations consolidate that the polarization-sensitive photoresponse is associated with anisotropic spacial confinement, which gives rise to distinct dielectric contrasts for linearly polarized light of various directions and thus the polarization-dependent near-field distribution. Furthermore, selective-area oxidation treatment brings about dual effects, comprising the in situ formation of seamless in-plane WS2 homojunctions by thickness tailoring and the formation of out-of-plane O-WS2/WS2 heterojunctions. As a consequence, the recombination of photocarriers is markedly suppressed, resulting in outstanding photosensitivity with the optimized responsivity, external quantum efficiency, and detectivity of 0.161 A/W, 49.4%, and 1.4 × 1011 Jones for an O-WS2/WS2 photodetector in a self-powered mode. A scheme of multiplexing optical communications is revealed by harnessing the intensity and polarization state of light as independent transmission channels. Furthermore, dynamic encryption by leveraging the polarization state as a secret key is proposed. In the end, broad universality is reinforced through the induction of linear dichroism within 2D WSe2 crystals. On the whole, this study provides an additional perspective on polarization optoelectronics based on 2DLMs.

Ultra-broadband, fast, and polarization-sensitive photoresponse of low-symmetry 2D NdSb2

Ultra-broadband, fast, and polarization-sensitive photoresponse of low-symmetry 2D NdSb2

Nonmonotonic wavelength dependence of the polarization-sensitive infrared photoresponse of an anisotropic semimetal.

Layered semimetals with in-plane anisotropy are promising for advanced polarization-sensitive infrared detection. The investigation of the polarization-dependent photoresponse of semimetals over the whole visible-to-long-wave-infrared range and revealing the physical connection between their optoelectronic properties, optical properties, and electronic band structures is required, but there have been very few studies of this kind. In this work, we conducted a thorough investigation on the polarization-dependent infrared photoresponse of WTe2 over the visible-to-long-wave-infrared range and discovered a textbook-like perfect consistency between the wavelength-dependent polarization-sensitive photoresponse and the anisotropic dielectric constant mainly affected by interband transitions near the Weyl point. It is revealed that the polarization sensitivity and the responsivity both vary non-monotonically with the wavelength. This phenomenon is attributed to the polarization selective excitation of interband transitions associated with asymmetrically distributed electron orbitals around the Weyl points. Concerning the infrared detection properties of WTe2, a maximum responsivity of 0.68 mA W-1 is obtained under self-powered operation. The power dependence of the photoresponse is linear, and the response time is around 14 μs. This work would provoke further studies about the anisotropic photoresponse associated with the transitions even closer to the Dirac or Weyl points, and it provides an approach to select the right semimetal for the right wavelength range of infrared polarization detection.

Interaction of polarization-sensitive surface photocurrents in semitransparent CuSe/Se film.

We demonstrate that the transverse polarization-sensitive photoresponse of the CuSe/Se nanocomposite film deposited on a transparent substrate depends on whether the film is irradiated from the air side or substrate side. In particular, the nanosecond photocurrent pulse is either bipolar or unipolar pulse depending on which interface beam hits first. The observed phenomenon can be described in terms of the interplay between counter-propagating photocurrents generated at the air/nanocomposite and substrate/nanocomposite interfaces due to the surface photogalvanic effect. Our experimental findings can be employed to control the amplitude and temporal profile of the photoresponse by changing the polarization of the excitation laser beam.

Exploring a layered iodide perovskite crystal with centimetered dimension for extended spectral polarization-sensitive photodetection

Via strategies of symmetry-reduction and halide remolding, a narrow bandgap layered iodide perovskite, (s-BA)2(MA)Pb2I7, has been developed which exhibits highly structural anisotropy and extended spectral polarization-sensitive photoresponse.

Zero-bias mid-infrared graphene photodetectors with bulk photoresponse and calibration-free polarization detection

Bulk photovoltaic effect (BPVE), featuring polarization-dependent uniform photoresponse at zero external bias, holds potential for exceeding the Shockley-Queisser limit in the efficiency of existing opto-electronic devices. However, the implementation of BPVE has been limited to the naturally existing materials with broken inversion symmetry, such as ferroelectrics, which suffer low efficiencies. Here, we propose metasurface-mediated graphene photodetectors with cascaded polarization-sensitive photoresponse under uniform illumination, mimicking an artificial BPVE. With the assistance of non-centrosymmetric metallic nanoantennas, the hot photocarriers in graphene gain a momentum upon their excitation and form a shift current which is nonlocal and directional. Thereafter, we demonstrate zero-bias uncooled mid-infrared photodetectors with three orders higher responsivity than conventional BPVE and a noise equivalent power of 0.12 nW Hz−1/2. Besides, we observe a vectorial photoresponse which allows us to detect the polarization angle of incident light with a single device. Our strategy opens up alternative possibilities for scalable, low-cost, multifunctional infrared photodetectors.

A chain-type diamine strategy towards strongly anisotropic triiodide of DMEDA·I6

Linearly bonded triiodide chains with fairly small distance between the adjacent iodine ions feature a facile electron transfer and highly anisotropic properties. Here, we demonstrate a novel strategy towards a new one-dimensional linear triiodide DMEDA·I6, using chain-type N,N′-dimethyl-ethanediamine (DMEDA) cation to coordinate triiodine ions. This triiodide has the shortest distance between adjacent I3 and good linearity. An estimated electronic band gap of 1.36 eV indicates its semiconducting properties. 100 fold differences both in polarization-sensitive absorption and effective mass were achieved by simulation, with directions parallel and perpendicular to the a-axis of DMEDA·I6. The DME-DA·I6 single crystal-based photodetectors show a good switching characteristic and a distinct polarization-sensitive photoresponse with linear dichroic photodetection ratio of about 1.9. Strongly anisotropic features and semiconducting properties of DMEDA·I6 make this triiodide system an interesting candidate for polarization related applications.

Polarization-sensitive photoresponse of the CuSe/Se nanocomposite prepared by vacuum thermal deposition

We report on the generation of the polarization-sensitive photocurrent in the thin film of the CuSe/Se nanocomposite irradiated by femtosecond pulses of Ti:S laser. CuSe/Se bilayer consisting of nanocrystalline CuSe and amorphous Se films was obtained using successive deposition of Cu and Se on a glass substrate in the course of vacuum thermal evaporation. Synthesized bilayers were characterized using optical transmittance and Raman spectroscopy, optical, atomic force and scanning electron microscopy and X-ray diffractometry. It is demonstrated that in the longitudinal configuration, the photocurrent propagating along the plane of incidence is maximum for the p- and vanishes for the s-polarized excitation beam. In the transverse configuration, the photocurrent propagating perpendicular to the plane of incidence is an odd function of the polarization azimuth of the linearly polarized excitation beam and vanishes when it is either p- or s-polarized. We show that for an elliptically polarized excitation beam the polarity of the transverse photocurrent reverses when rotation direction of the electric field vector changes. Both longitudinal and transverse photocurrents are odd functions of the angle of incidence and can be explained in terms of the surface photogalvanic effect.

Perpendicular Optical Reversal of the Linear Dichroism and Polarized Photodetection in 2D GeAs.

The ability to detect linearly polarized light is central to practical applications in polarized optical and optoelectronic fields and has been successfully demonstrated with polarized photodetection of in-plane anisotropic two-dimensional (2D) materials. Here, we report the anisotropic optical characterization of a group IV-V compound-2D germanium arsenic (GeAs) with anisotropic monoclinic structures. High-quality 2D GeAs crystals show the representative angle-resolved Raman property. The in-plane anisotropic optical nature of the GeAs crystal is further investigated by polarization-resolved absorption spectra (400-2000 nm) and polarization-sensitive photodetectors. From the visible to the near-infrared range, 2D GeAs nanoflakes demonstrate the distinct perpendicular optical reversal with a 75-80° angle on both the linear dichroism and polarization-sensitive photodetection. Obvious anisotropic features and the high dichroic ratio of Ipmax /Ipmin ∼ 1.49 at 520 nm and Ipmax /Ipmin ∼ 4.4 at 830 nm are achieved by the polarization-sensitive photodetection. The polarization-dependent photocurrent mapping implied that the polarized photocurrent mainly occurred at the Schottky photodiodes between electrode/GeAs interface. These experimental results are consistent with the theoretical calculation of band structure and band realignment. Besides the excellent polarization-sensitive photoresponse properties, GeAs-based photodetectors also exhibit rapid on/off response. These results demonstrate that the 2D GeAs crystals have promising potential for polarization optical applications.

Air-Stable In-Plane Anisotropic GeSe2 for Highly Polarization-Sensitive Photodetection in Short Wave Region.

In-plane anisotropic layered materials such as black phosphorus (BP) have emerged as an important class of two-dimensional (2D) materials that bring a new dimension to the properties of 2D materials, hence providing a wide range of opportunities for developing conceptually new device applications. However, all of recently reported anisotropic 2D materials are relatively narrow-bandgap semiconductors (<2 eV), and there has been no report about this type of materials with wide bandgap, restricting the relevant applications such as polarization-sensitive photodetection in short wave region. Here we present a new member of the family, germanium diselenide (GeSe2) with a wide bandgap of 2.74 eV, and systematically investigate the in-plane anisotropic structural, vibrational, electrical, and optical properties from theory to experiment. Photodetectors based on GeSe2 exhibit a highly polarization-sensitive photoresponse in short wave region due to the optical absorption anisotropy induced by in-plane anisotropy in crystal structure. Furthermore, exfoliated GeSe2 flakes show an outstanding stability in ambient air which originates from the high activation energy of oxygen chemisorption on GeSe2 (2.12 eV) through our theoretical calculations, about three times higher than that of BP (0.71 eV). Such unique in-plane anisotropy and wide bandgap, together with high air stability, make GeSe2 a promising candidate for future 2D optoelectronic applications in short wave region.

Antenna-enhanced and polarization sensitive photoresponse in arrays of silicon P–i–N nanowires

We analyze a novel antenna effect that resonantly enhances the photocurrent response of end-contacted P–i–N junction nanowire gratings, due to coupling of incident radiation into the grating's multiple-scattering electromagnetic modes. Quantitative characterization of these resonances was performed by spectral and polarization-resolved photocurrent measurements on gratings with N = 500, 200 and 100 nanowires, aided by electron beam-induced current measurements, and in excellent agreement with electromagnetic scattering theory. Despite the small scattering cross-section of each nanowire, with triangular cross-section (height 8 nm, width 6 nm), the measured quality factor of the resonances Q ≈ 10 exceeds that of the empty SiO2 cavity without degradation for gratings of as few as 100 nanowires. Photoresponse retains sinusoidal polarization anisotropy characteristic of single nanowires. We discuss strategies for improving Q and present a grating design tailoring resonant field enhancement at red, green or blue wavelengths, for three different grating periods of ℓ = 460, 400 and 320 nm.