Polarization-electric Field Hysteresis Loops Research Articles

Superior Piezoelectric Performance in Textured CaBi2Nb2O9 Ferroelectric Ceramics through Rare-Earth Gadolinium Doping and Spark Plasma Sintering.

High-performance piezoelectric ceramics with excellent thermal stability are crucial for high-temperature piezoelectric sensor applications. However, conventional fabrication processes offer limited enhancements in piezoelectric performance. In this study, we achieved a significant breakthrough in the piezoelectric performance of highly textured CaBi2Nb2O9 (CBN) ceramics by incorporating rare-earth gadolinium doping and utilizing spark plasma sintering. The resulting Ca0.97Gd0.03Bi2Nb2O9 (CBN-3Gd) ceramics exhibited superior piezoelectric properties, with a high piezoelectric constant d33 of 26 pC/N and a high Curie temperature TC of 946 °C. We employed piezoresponse force microscopy (PFM) to observe the morphology and dimensions of the ferroelectric domains, revealing a rod-shaped 3D domain configuration. This configuration facilitated polarization rotation in the textured ceramics, as analyzed using X-ray photoelectron spectroscopy (XPS) and polarization-electric field (P-E) hysteresis loops. Furthermore, the textured CBN-3Gd ceramics demonstrated exceptional thermal stability and reliability. The piezoelectric constant d33 decreased by only 11.8% over a temperature range of room temperature to 500 °C, and the DC electrical resistivity remained at 6.7 × 105 Ω cm at 600 °C. This work not only highlights the great potential of textured CBN-based ceramics for high-temperature piezoelectric sensors but also provides a viable strategy for enhancing the performance of piezoelectric materials with large aspect ratio micromorphology.

Growth of Single Crystals of (K1-xNax)NbO3 by the Self-Flux Method and Characterization of Their Phase Transitions.

In this study, single crystals of (K1-xNax)NbO3 are grown by the self-flux crystal growth method and their phase transitions are studied using a combination of Raman scattering and impedance spectroscopy. X-ray diffraction shows that single crystals have a perovskite structure with monoclinic symmetry. Single crystal X-ray diffraction shows that single crystals have monoclinic symmetry at room temperature with space group P1211. Electron probe microanalysis shows that single crystals are Na-rich and A-site deficient. Temperature-controlled Raman scattering shows that low temperature monoclinic-monoclinic, monoclinic-tetragonal and tetragonal-cubic phase transitions take place at -20 °C, 220 °C and 440 °C. Dielectric property measurements show that single crystals behave as a normal ferroelectric material. Relative or inverse relative permittivity peaks at ~-10 °C, ~230 °C and ~450 °C with hysteresis correspond to the low temperature monoclinic-monoclinic, monoclinic-tetragonal and tetragonal-cubic phase transitions, respectively, consistent with the Raman scattering results. A conduction mechanism with activation energies of about 0.5-0.7 eV was found in the paraelectric phase. Single crystals show polarization-electric field hysteresis loops of a lossy normal ferroelectric. The combination of Raman scattering and impedance spectroscopy is effective in determining the phase transition temperatures of (K1-xNax)NbO3.

Mn-inlaid antiphase boundaries in perovskite structure

Improvements in the polarization of environmentally-friendly perovskite ferroelectrics have proved to be a challenging task in order to replace the toxic Pb-based counterparts. In contrast to common methods by complex chemical composition designs, we have formed Mn-inlaid antiphase boundaries in Mn-doped (K,Na)NbO3 thin films using pulsed laser deposition method. Here, we observed that mono- or bi-atomic layer of Mn has been identified to inlay along the antiphase boundaries to balance the charges originated from the deficiency of alkali ions and to induce the strain in the KNN films. Thus, rectangular saturated polarization-electric field hysteresis loops have been achieved, with a significantly improved twice remanent polarization of 114 μC/cm2 with an applied electric field of 606 kV/cm, which can be comparable to that of the typical Pb-based thin films. Moreover, we directly see the Mn occupation at the A-site of KNN perovskite structure using atomic-scale microstructure and composition analysis. The Mn-inlaid antiphase boundary can further enrich the understanding of perovskite crystal structure and give more possibilities for the design and optimization of perovskite materials.

Effects of shear and bending strains on domain structures in freestanding ferroelectric thin films from phase-field simulations

Freestanding ferroelectric thin films, free from substrate constraints, present a platform for advanced strain engineering owing to their exceptional mechanical flexibility. The strain state in freestanding ferroelectric thin films can be modulated through various mechanical deformations, enabling precise control over the physical properties and performance of the ferroelectric films. Here, we utilized phase-field simulations to explore the polarization evolution and switching behavior of freestanding BaTiO3 ferroelectric thin films under bending and shear strains. Our findings reveal that shear strain transforms flux-closure domains into a monoclinic phase, increasing the coercive field, maximum polarization, and remanent polarization, thereby broadening the ferroelectric polarization–electric field hysteresis loop. The underlying mechanism involves the competition between elastic and electrostatic energies, which becomes more pronounced with increasing shear strain. Additionally, this contrasts with the modulation of domain structures by bending strain, which causes a rightward shift in the ferroelectric polarization–electric field hysteresis loop due to the flexoelectric fields generated by bending deformation. These findings provide profound insights into the strain effects in ferroelectrics, highlighting the complex interplay between mechanical deformation and electrical response. The ability to manipulate domain structures and polarization behaviors through controlled mechanical strains paves the way for designing high-performance, flexible ferroelectric devices.

Negative slope polarization in ferroelectric hysteresis loop engineered by defect dipoles

The power dissipation in conventional microelectronic devices is facing a fundamental barrier of Boltzmann Tyranny. The negative capacitance (NC) effect in ferroelectric materials provides possible solution to overcome this impending problem and gets a lot of attention. Here we report a novel method to design negative capacitance in ferroelectrics by the introduction of defect-dipole engineering. In the molecular dynamics simulations of a first principles-based effective Hamiltonian, an abnormal polarization with negative slope and corresponding differential capacitance are observed in the polarization-electric field (P-E) hysteresis loops when the applied electric field is perpendicular to the direction of the defect dipoles in acceptor-doped BaTiO3 single crystals. This phenomenon is attributed to the fact that the polarization overshoots, oscillates and finally gradually switches to the direction of defect dipoles by their restoring forces during the polarization switching near the coercive field. The P-E loop exhibits abnormal NC response only at a certain range of defect levels, and there are double loops at high level and typical square-shaped loops at low level. Moreover, in the experiments of poled 1 mol.% Mn-doped BaTiO3 ceramics, the abnormal negative slope polarization in P-E loops is confirmed, which are in good agreement with the simulation results.

Synergistic homovalent and heterovalent substitution effects on piezoelectric and relaxor behavior in lead-free BaTiO3 ceramics

This study investigates lead-free BaTiO3 (BT) perovskite ceramics, unraveling the synergistic effects arising from simultaneous homovalent (Zr) and heterovalent (Nb) substitution. Focusing on piezoelectric, ferroelectric, and relaxor behaviors, this research employs a comprehensive suite of analyses, including temperature-dependent dielectric measurements, polarization-electric field hysteresis loops, and bipolar strain measurements. Significantly, our study unveils that the simultaneous substitution of Zr and Nb in the BT lattice induces room-temperature relaxor behavior at relatively low concentrations (5 % Zr and 3 % Nb), yielding higher permittivity and larger maximum polarization compared to single element (Zr or Nb) substituted BT relaxors. Bipolar strain measurements showcase substantial large-signal d33* values (∼250 pm/V) across a broad temperature range (–50 °C to 30 °C) for BT ceramics with simultaneous 5 % Zr and 2 % Nb substitution. This research advances understanding of homovalent and heterovalent substitution in BT ceramics and opens avenues for tailoring properties to suit specific applications.

Insights into enhanced antiferroelectricity in doped-niobate perovskites for high energy-storage density applications

Lead-free antiferroelectric (AFE) ceramics have attracted increasing attention in recent years for application in high-power capacitors due to their environmental friendliness and high energy density. Among these ceramics, NaNbO3 is noteworthy as one of the few lead-free perovskites displaying an AFE structure. However, despite the nature of AFE symmetry in NaNbO3 with Nb antipolar state, in most cases, it behaves like a ferroelectric (FE) material with an external electric field and exhibits a single polarization-electric field (P-E) hysteresis loop. In order to enhance the antiferroelectricity, a composition modification strategy based on the tolerance factor (t) has been used to stabilize the AFE phase effectively. Yet, in the context of NaNbO3 ceramics, the impact of doping on the evolution of antiferroelectricity has remained unexplored. Through first-principles calculations, we unveil how the chemical modification of NaNbO3 enhances antiferroelectricity by investigating local distortions that favor the AFE state over the FE state in solid solutions. This adjustment in the relative stability between the FE state and AFE state results in a significant modification in the switching barrier in NaNbO3-based antiferroelectrics, ultimately leading to well-defined double polarization loops. This work offers a rationalized atomic-scale perspective on the AFE-FE phase transition in NaNbO3-based ceramics, aiming to contribute to the development of novel lead-free antiferroelectric oxides for energy storage applications.

Ferroelectric behavior arising from polar topologies in epitaxially strained SrTiO3-δ ultrathin films

In this work, we show that epitaxially strained SrTiO3-δ thin films, grown by ion-beam sputtering onto (001)Nb:SrTiO3 substrates, exhibit a ferroelectric behavior. At the atomic-scale, through high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) images, it was possible to identify the presence of polar nanoregions with non-trivial polar topological structures in the SrTiO3-δ film, which are induced through oxygen vacancies. To further confirm the presence of strained regions with a polar structure, Raman spectroscopy and high-resolution X-ray diffraction were employed and it was possible to confirm the presence of a tetragonal structure in the SrTiO3-δ film, with a tetragonality ratio (c/a) of 1.005. Scanning probe microscopy and macroscopic polarization-electric field hysteresis loops show ferroelectric behavior with maximum polarization of ∼1.5 μC/cm2, remnant polarization of ∼0.4 μC/cm2 and coercive field of ∼0.3 MV/cm. This work opens a window for exploring novel polar topological effects in sub-10 nm thin film materials for non-volatile memory application.

High energy storage performance induced by the introduction of BiScO3 into (Bi0.5Na0.5)TiO3–BaTiO3 lead-free ferroelectric ceramics

In this work, ternary 0.25(Bi0.5Na0.5)TiO3-(0.75-x)BaTiO3-xBiScO3(abbreviated as 0.25BNT-(0.75-x)BT-xBS, x = 0.19, 0.21, 0.23, 0.25, 0.27) lead-free ferroelectric ceramics were synthesized using the solid-state reaction method. The introduction of BiScO3 into (Bi0.5Na0.5)TiO3–BaTiO3 ceramics had a significant impact on changing the phase structures, and microstructures, as well as the dielectric and ferroelectric properties. All ceramics exhibited a coexistence of tetragonal(P4bm) and rhombohedral(R3c) perovskite phases, while the influence of the BiScO3(BS) content on the average grain size was not significant. Slim polarization-electric field hysteresis loops were recorded for the 0.25BNT-(0.75-x)BT-xBS ceramics, with low remnant polarization (Pr) and large maximum polarization(Pmax). 0.25BNT-0.50BT-0.25BS ceramic had the largest Pmax, which induced a high energy storage density of 2.93 J/cm3 and energy storage efficiency of 91 % under a low electric field of 230 kV/cm 0.25BNT-0.50BT-0.25BS ceramic not only yielded excellent fatigue resistance, but also maintained good energy storage performance at high temperature and high frequency, which are considered of great importance since they can be leveraged for the potential development of high temperature and frequency capacitors. In addition, an excellent pulse performance was measured, with a high discharge energy density of 3.42 J/cm3 and a fast discharging rate t0.9 of 130 ns. This good pulse performance was maintained at high temperatures, suggesting that the proposed material is also highly competitive for applications where high-temperature pulse devices are required.

Growth, Structure, and Electrical Properties of AgNbO3 Antiferroelectric Single Crystal

AgNbO3 (AN) lead-free antiferroelectric material has attracted great attention in recent years. However, little focus has been directed toward a single crystal that can provide more basic information. In this study, we successfully grew high-quality AN single crystals, using a flux method, with dimensions of 5 × 5 × 3 mm3. A systematic investigation into the crystal structure, domain structure, and electrical properties of a [001]-oriented AN single crystal was conducted. X-ray diffraction and domain structure analysis revealed an orthorhombic phase structure at room temperature. Stripe-like 90° domains aligning parallel to the [110] direction with a thickness of approximately 10–20 μm were observed using a polarized light microscope. The temperature dependence of dielectric permittivity showed M1-M2, M2-M3, and M3-O phase transitions along with increasing temperature, but the phase transition temperatures were slightly higher than those of ceramic. The AN single crystal also exhibited double polarization-electric field (P-E) hysteresis loops, which enabled good recoverable energy-storage density and efficiency comparable to ceramic. Additionally, double P-E loops were kept stable at various temperatures and frequencies, demonstrating robust stability and confirming typical antiferroelectric characteristics. Our work provides valuable insights into understanding the fundamental antiferroelectric properties of AN-based materials.

Enhancing pulse energy-storage performance via strategy of establishing sandwich heterostructure

The effects of sandwich heterostructure on the energy-storage property are still existing some “mess”, detailed and systematic investigation should be carried out. In this work, novel sandwich heterostructure ceramics composed of (Ba0.94Li0.02La0.04)(Mg0.04Ti0.96)O3 and 0.85(Ba0.94Li0.02La0.04)(Mg0.04Ti0.96)O3–0.15NaNbO3 were prepared by film stacking and laminating technology and traditional solid-state sintering, to reveal the relationship between sandwich heterostructure and energy-storage performance. Sandwich heterojunction significantly affects electron-injection, space-charge, build-in electric field (Ei) direction, interlayer-coupling, interface-blocking and clamping effect. Ei direction is adjusted and electric tree growth is restrained. Interface blocking effect mainly occurs when Ei direction is opposite to applied electric field. Comparatively high polarization and tilted polarization-electric field hysteresis loops are obtained. Outstanding recoverable energy-storage density of 5.81 J/cm3 and discharge energy density of 3.99 J/cm3 are gained with current density of 1016.71 A/cm2 and power density of 305.01 MW/cm3. Satisfactory frequency stability, temperature stability and anti-fatigue feature are also achieved. Such sandwich heterostructure design develops a convenient and effective method to enhance energy-storage performance, and related research guides the study of energy-storage performance in multilayer heterostructure.

Effects of interfacial buffering layer on imprint and domain switching dynamics in Pb(Zr,Ti)O3 thin-film heterostructures

Interfacial engineering is important for ferroelectric thin-film heterostructures because of the modulation of boundary conditions of the spontaneous polarizations and their switching behaviors, which are essential for ferroelectric electronics. In this work, we study the effects of interfacial buffering layer, 5-nm-thick SrTiO3 (STO), on the imprint and domain switching of epitaxial Pt/Pb(Zr,Ti)O3/SrRuO3 (SRO) thin-film heterostructures and capacitors. By buffering the ultrathin SrTiO3 layer at the Pb(Zr,Ti)O3 surface, the imprint effect can be dramatically alleviated as observed in the piezoresponse force microscopy (PFM)-measured domain structures and polarization–electric field hysteresis loops in thin-film capacitors. However, when the SrTiO3 layer is buffered at the Pb(Zr,Ti)O3/SrRuO3 interface, the imprint effect is slightly increased. These phenomena are explained based on the band alignments among the Pt and SrRuO3 electrodes and the Pb(Zr,Ti)O3 layer associated with the existence of oxygen vacancies in the SrTiO3 layer. With the reduction of imprint effect, the domain switching dynamics are also improved in the SrTiO3-buffered Pb(Zr,Ti)O3 capacitor, in which the switching activation field is decreased by about 45.3% in comparison with that of the pristine capacitor. These results facilitate the design and optimization of ferroelectric devices with the improvements in domain configurations, switching behaviors and band alignments.

Energy storage performance and piezoelectric response of silver niobate antiferroelectric thin film

AgNbO3-based antiferroelectric materials have attracted extensive attention in energy storage due to their double polarization-electric field hysteresis loops, but they always suffer from low breakdown strength (Eb). Films with few defects and small thickness exhibit high breakdown strength, which helps to improve energy storage performance. In the present work, an AgNbO3 film with a small thickness of ∼200 nm is prepared via pulsed laser deposition, which has a dense microstructure and a small average grain size of ∼34.5 nm. The AgNbO3 film displays an antiferroelectric nature, as confirmed by the double polarization-electric field hysteresis loops at room temperature. The room temperature phase structure of the AgNbO3 film determined by the dielectric behaviour is the antiferroelectric M2 phase. Due to the small thickness and fine grain size, a high Eb of 1200 kV/cm is obtained, which boosts a recoverable energy storage density (Wrec) of 9.3 J/cm3 and an energy efficiency (η) of 63.7 % in the AgNbO3 film. In addition, Wrec exhibits good temperature stability at 30–120 °C. The AgNbO3 film shows an obvious piezoelectric response after the electric field-induced antiferroelectric-ferroelectric phase transition as confirmed by piezoresponse force microscopy. These results provide guidance for the development of AgNbO3 antiferroelectric films and devices with good energy storage performance.

Growth and characterization of novel piezo-/ferroelectric single crystals from the PSN-BS-PT ternary system

Bismuth-based single crystals with the nominal composition of 0.1Pb(Sc1/2Nb1/2)O3-0.315BiScO3-0.585PbTiO3 (0.1PSN-0.315BS-0.585PT) ternary complex perovskite system were successfully grown using a high-temperature solution growth (HTSG) method. A mixture of PbO and Bi2O3 in a molar ratio of 73:27 was used as flux, and the flux to charge ratio was optimized to be 70:30 (wt%). The grown crystals, with dimensions up to 3 mm, exhibit a pseudo-cubic morphology. The XRD patterns of the ground powder and naturally formed pseudo-cubic facets confirm that the grown single crystals crystallize in the perovskite structure with the rhombohedral symmetry as the major phase, and the naturally grown pseudo-cubic facets are parallel to {100}C. The domain structures in the (001)-oriented single crystals examined by polarized light microscopy (PLM) and optical crystallography reveal the coexistence of rhombohedral and monoclinic phases in majority, with the presence of a minor tetragonal phase likely grown at the late stage of the growth, demonstrating the morphotropic phase boundary (MPB) characteristics for the grown crystals. Upon heating, phase transition from the major rhombohedral and monoclinic to the cubic phase take place at TC = 370 °C. The ferroelectric properties are displayed by polarization-electric field (P-E) hysteresis loops with a remanent polarization of 17 µC/cm2 and a high coercive field of 68 kV/cm. The piezoelectric coefficient (d33) is found to be 478 pC/N. The high Curie temperature and decent piezo- and ferroelectric performance of the PSN-BS-PT crystals make this ternary complex perovskite system a promising candidate for potential applications in high-temperature and high-power electromechanical transduction.

The effect of cation size on structure and properties of Ba-based tetragonal tungsten bronzes Ba4M2Nb10O30 (M = Na, K or Rb) and Ba4M2Nb8Ti2O30 (M = Ca or Sr).

The second largest family of oxide ferroelectrics, after perovskites, are the tetragonal tungsten bronzes (TTB) with the general formula A24A12C4B12B28O30. Cation disorder in TTBs is known to occur if the size difference between cations is small, but the impact of cation disorder on structure and properties has not yet been extensively addressed. In this study we investigate the effect of the size of the M cation, including cation disorder, on the crystal structure and dielectric properties in the two series Ba4M2Nb10O30 (BMN, A = Na, K and Rb) and Ba4M2Nb8Ti2O30 (BMNT, M = Ca, Sr). Dense and phase pure ceramics in the two series were prepared by a two-step solid state synthesis route. The crystal structures of the materials were characterized by powder X-ray diffraction combined with Rietveld refinement. A close to linear relation between the in-plane lattice parameter (a) and the size of the M-cation were observed. Ba4M2Nb8Ti2O30 was shown to possess cation disorder on the A-sites in line with previous work on Ba4M2Nb10O30. Thermodynamic calculations from density functional theory also indicated a drive for cation disorder in the three BMN compositions. Non-ambient temperature X-ray diffraction revealed contraction of the in-plane (a) and expansion of the out-of-plane (c) lattice parameters at the ferroelectric phase transition for Ba4M2Nb10O30. The ferroelectric transition temperature acquired by dielectric spectroscopy showed a systematically increasing TC with decreasing size of the M-cation within both compositional series studied. The compositional dependence of TC is discussed with respect to the size of the M-cation, cation disorder and the tetragonality, as well as the Ti-content. The relaxor to ferroelectric properties observed by polarization-electric field hysteresis loops are discussed in relation to the relative size of cations on the on A1 and A2 sites and the Ti-content.

Nonlinear ferroelectric characteristics of barium titanate nanocrystals determined via a polymer nanocomposite approach.

The growing demand for high energy storage materials has garnered substantial attention towards lead-free ferroelectric nanocrystals (NCs), such as BaTiO3 (BTO), for next-generation multilayer ceramic capacitors. Notably, it remains challenging to accurately measure the dielectric constant and polarization-electric field (P-E) hysteresis loop for BTO NCs. Herein, we report on nonlinear ferroelectric characteristics of BTO NCs via a polymer nanocomposite approach. Specifically, poly(vinyl pyrrolidone) (PVP)/BTO nanocomposite films of 3-10 μm thickness, containing 380 nm tetragonal-phased and 60 nm cubic-phased BTO NCs with uniform particle dispersion, were prepared. Theoretical deconvolution of the broad experimental P-E loops of the PVP/BTO NC composite films revealed three contributions, that is, the linear deformational polarization of the nanocomposites, the polarization of BTO NCs (Pp), and the polarization from strong particle-particle interactions. Using different mixing rules and nonlinear dielectric analysis, the overall dielectric constants of BTO NCs were obtained, from which the internal field in the BTO NCs (Ep) was estimated. Consequently, the Pp-Ep hysteresis loops were obtained for the BTO380 and BTO60 NCs. Interestingly, BTO380 exhibited square-shaped ferroelectric loops, whereas BTO60 displayed slim paraelectric loops. This work presents a robust and versatile route to extract the Pp-Ep loops of ferroelectric NCs from polymer/ceramic nanocomposites.

Energy storage density of tailored relaxor-antiferroelectric state in Gd-doped Ag(Nb0.8Ta0.2)O3 ceramics

Antiferroelectric state AgNb0.8Ta0.2O3 ceramics can be adjusted by doping with Gd to form the relaxor-antiferroelectric state (Ag1-3xGdx)(Nb0.8Ta0.2)O3 ceramics (x = 0, 0.01, 0.02, 0.03, 0.04) for energy storage applications. The superb recoverable energy density (Wrec) of ∼9.47 J cm−3 at x = 0.01 and energy storage efficiency (η) of ∼68 % at x = 0.02 can be achieved at 375 kV cm−1. The superb Wrec can be attributed to phase evolution modulated with optimal fractions of ferroelectric Pmc21, antiferroelectric Pnma, and nonpolar cubic Pm-3m symmetries. Polarization-electric field (P-E) hysteresis loop, dielectric permittivity, atomic vibration, and electron diffraction pattern were used to probe the mechanism of superb recoverable energy density.

Optimized Electrocaloric Refrigeration in Lead-Free NaNbO3-Based Ceramics via AFE ↔ FE Phase Transition Modulation.

An outstanding challenge for eco-friendly ferroelectric (FE) refrigeration is to achieve a large adiabatic temperature change within a broad temperature range originating from the electrocaloric (EC) effect, which is expected to be realized in antiferroelectric (AFE) materials owing to the large entropy change during electric field and thermally induced phase transition. In this work, a large EC response over a wide response temperature range can be achieved slightly above room temperature via designing the phase transition of NaNbO3. An irreversible to reversible AFE-FE phase transition on heating induced by the introduction of CaZrO3 into NaNbO3 plays a key role in the optimized electrocaloric refrigeration. Accordingly, accompanying the local structure transformation corresponding to the B-site ions, the transition temperature between the square polarization-electric field (P-E) hysteresis loop (the irreversible AFE-FE phase transition induced by the electric field) and the repeatable double P-E hysteresis loop (the electric field induced reversible AFE-FE phase transition) was tailored to around room temperature, in favor of extending large entropy change to the wide temperature range. This work provides an efficient approach to designing lead-free EC materials with excellent EC performance, promoting the advancement of environmentally friendly solid-state cooling technology.

High-performance energy storage in BNST-based lead-free ferroelectric ceramics achieved through high-entropy engineering

The utilization of a high entropy approach for the design of high-performance perovskite dielectric capacitors has been gaining much attention for the development of next-generation pulse power capacitors. Despite this, there are still challenges to further enhance their energy storage density and efficiency. To address this, a high-entropy strategy is proposed to significantly improve the energy storage characteristics of ceramics by increasing the configurational entropy and delaying saturation polarization. This approach has resulted in an ultra-high recoverable energy storage density (Wrec) of 7.16 J/cm3 and a high efficiency (η) of 93.3 % for 0.8[0.65(Bi0.5Na0.5)TiO3-0.35SrTiO3)]-0.2[Ba(Zr0.2Ti0.2Sn0.2Hf0.2Nb0.2)O3] (abbreviated as 0.8BNST-0.2Ba(5 M)O) ceramic. The inclusion of Ba(5 M)O high entropy oxides has resulted in slender polarization–electric field hysteresis loops with delayed polarization saturation. The increase in atomic configuration entropy, degree of atomic disorder and lattice distortion due to the Ba(5 M)O high entropy oxides, has led to an increase in breakdown field, improved energy storage density and efficiency. Furthermore, excellent thermal stability (30–150 ℃), superior frequency stability (5–1000 Hz), and robust fatigue (100–105 cycles) endurance were achieved. The high entropy strategy has been demonstrated to be an effective method for the design of novel capacitors with superior energy storage performance.

Effect of Sn4+ doping on antiferroelectric and energy storage properties of PbHfO3 thin films prepared by a sol-gel process

Antiferroelectric materials possess excellent energy storage capacity, fatigue resistance, and high thermal stability. This study successfully prepared PbHf1-xSnxO3 (x = 0.5%, 1.0%, 1.5%, 2.0%, abbreviated as PHS-100x) antiferroelectric thin films on fluorine-doped tin oxide (FTO)/glass substrates using the sol-gel method. The polarization-electric field hysteresis (P–E) loops were utilized to reflect the AFE characteristics. These findings demonstrate that the PHS-1.0 thin film exhibited exceptional energy storage performance with a recoverable energy storage density (Wrec) of 30.91 J/cm3 and an energy storage efficiency (η) of 75.8% at room temperature (RT) and an electric field of 1670 kV/cm. P–E loops tests (30–130 °C) indicated that the PHS-1.0 film possessed good temperature stability. Additionally, the PHS-1.0 film displayed outstanding fatigue resistance under 880 kV/cm, with a minor decrease in Wrec from 23.93 to 20.20 J/cm3 and in η from 72.93 to 71.21% after 108 cycles of testing. These results suggest that PHS-100x films hold great potential for use in pulsed power systems.