Plasma Wavelength Research Articles

Enhanced pointing and charge properties of electron beams from few-TW laser wakefield acceleration with an asymmetric density profile in a sub-millimeter nitrogen gas jet

This work demonstrates the feasibility of creating a sub-millimeter, subsonic nitrogen gas jet using a 178-μm diameter orifice to conduct laser wakefield acceleration (LWFA) with 1-TW, 40-fs laser pulses. More importantly, our findings reveal that using a blade to impede part of the gas flow and create an asymmetric density profile with a shortened down-ramp leads to a notable reduction in pointing fluctuations and an increase in the total charge of the output electron beams. As evidenced by the corresponding particle-in-cell simulation, the laser intensity is more effectively sustained toward the downstream end of the shaped gas jet, allowing for effective excitation of low-amplitude plasma waves that help preserve the accelerated electrons over the target rear side. In contrast, the pulse intensity drops significantly within the rear side of the unshaped gas jet, resulting in continuously diminishing plasma waves and decreased beam charge. The steeper gradient of the density down-ramp in the shaped gas jet also leads to a more rapid increase in the plasma wavelength over a reduced propagation distance, which helps mitigate the dephasing of accelerated electrons and increase the charge at the high-energy side of the spectrum. Our study paves the way for the future development of few-TW LWFA using a subsonic gas jet with sharp edges to further enhance the properties of output electron beams.

Improved SERS activity of TiN microstructures by surface modification with Au

Over the years, numerous outstanding research groups around the world have been working tirelessly on metallic SERS substrates. Although these efforts have led to the development of various sensors and pushed the field forward, today this line of research seems saturated and exhausted. In this work, we address this issue by exploring an emerging topic in recent literature: the fabrication of high-performance TiN SERS-active structures. TiN thin film was sputtered onto pyramidal Si microstructures. Spectroscopic ellipsometry measurements confirmed the plasmonic properties of the TiN material above its plasma wavelength of 515 nm. The Si-TiN surface was subsequently modified with an Au layer, which was then transformed into Au nanoparticles (Au NPs) during the Rapid Thermal Annealing process. The Si-TiN-AuNPs samples exhibited the highest extinction intensity, as well as the best SERS signal intensity for the model Raman reporter molecule. Further analysis of the SERS data showed that the presence of the Au thin film only moderately increased SERS activity, while Au NPs enhanced the SERS signal by one order of magnitude. Final Si-TiN-AuNPs platforms were successfully employed for the detection of vitamin B12, demonstrating a low limit of detection (8.57•10–8 M) along with excellent point-to-point repeatability.Graphical abstract

Influence of material and geometry parameters on resonance linewidths of plasmonic modes in gratings made from highly doped Ge1− x Sn x

Highly doped group IV semiconductors such as Ge or GeSn are promising candidates for plasmonic mid infrared applications. The lower effective mass of GeSn alloys in comparison to pure Ge can result in lower plasma wavelengths and extend the application wavelength range. Devices made from doped GeSn alloys, therefore, are one interesting route towards plasmonic applications in the mid-infrared wavelength range, possibly extending to the NIR. Here, we specifically explore how spectrally narrow plasmonic resonances can be obtained in comb-like grating antennas by combining aspects of material growth with geometry optimization. We investigate both in simulation and in experiment how the interplay of localised surface plasmon resonances and Rayleigh anomalies can be tuned to achieve narrow extinction peaks originating from the resulting surface lattice resonances generated in our antennas made from highly doped Ge1−x Sn x .

Bay Laurel of Northern Morocco: A Comprehensive Analysis of Its Phytochemical Profile, Mineralogical Composition, and Antioxidant Potential

Laurus nobilis, sometimes referred to as laurel, has been used for medicinal and culinary purposes for a very long time. The main subjects of this study are the phytochemical composition, mineralogical profile, and potential antioxidant properties of Laurus nobilis in Tangier, Northern Morocco. For phytochemical analysis of methanolic extracts, high-performance liquid chromatography (HPLC-UV-MS) was used, and Fourier transformation infrared spectroscopy (FT-IR) was used to identify each individual component. Minerals were studied by inductively coupled plasma atomic emission spectroscopy (ICP-AES) and wavelength dispersive X-ray fluorescence (WD-XRF). Total tannin, flavonoid, and phenolic amounts were quantified using aqueous and methanolic extracts. The antioxidant properties were assessed using 2,2-diphenyl-1-picrylhydrazyl (DPPH), 2,2′-azino-bis (3ethylbenzothiazoline-6-sulfonic acid) (ABTS), ferric reducing antioxidant power (FRAP), and oxygen radical absorbance capacity (ORAC) assays. Research has revealed a complex array of phytochemicals, including tannins, flavonoids, and phenolic acids. Mineral analysis has revealed the existence of vital components that are beneficial to health. Comparing the methanolic extract to the water extract, it demonstrated higher levels of phenols, flavonoids, and tannins as well as stronger antioxidant activity, indicating greater health benefits. This comprehensive study highlights the importance of Laurus nobilis from Northern Morocco as a reliable botanic resource with potential pharmaceutical, nutritional, and cosmetic uses.

Effect of wiggler magnetic field on wakefield excitation and electron energy gain in laser wakefield acceleration

Abstract Laser wakefield acceleration is a frequently utilised research methodology for enhancing the energy levels of lighter charged particles, specifically electrons, to relativistic magnitudes. In this investigation, we utilised a linear polarised Gaussian-like laser pulse that propagated along the z-axis through cold collisionless underdense plasma in weakly nonlinear regime. An external planer magnetic wiggler field is applied along the y-axis. The influence of various critical parameters, such as amplitude and propagation constant of wiggler magnetic field, amplitude of laser electric field and laser pulse length on the wakefield and electron energy gain has been studied. A wiggler-assisted laser wakefield accelerator, the electron energy and wakefield evolution can be tuned by the wiggler magnetic field strength. The numerical findings demonstrate that by varying the strength of wiggler magnetic field and laser electric field, the amplitude of the wakefield is affected significantly. Furthermore, the equality of the order of pulse length and plasma wavelength is essential to obtain energy efficient acceleration mechanism. By employing specific parameters, a maximum energy increase of 2.26 GeV is achieved. This research will aid in the development of an energy-efficient electron acceleration technology by choosing suitable laser and plasma parameters.

Signatures of resonantly driven laser-wakefield excitation by a pulse train generated by an optical delay mask

Electron plasma waves can be efficiently excited by a resonant train of ultrashort pulses, spatially separated by a plasma wavelength. Generating a pulse train from a single amplified ultrashort pulse may be challenging when dealing with large beams. Here we discuss a pulse splitting technique using a simple delay mask that can be adapted to large diameter petawatt beams. We show via detailed numerical simulations that unique signatures of electrons accelerated by a resonantly excited wakefield can be obtained from realistic focused double-pulse trains obtained from a single-region delay mask.

Tuneable Anisotropic Plasmonics with Shape-Symmetric Conducting Polymer Nanoantennas.

A wide range of nanophotonic applications rely on polarization-dependent plasmonic resonances, which usually requires metallic nanostructures that have anisotropic shape. This work demonstrates polarization-dependent plasmonic resonances instead by breaking symmetry via material permittivity. The study shows that molecular alignment of a conducting polymer can lead to a material with polarization-dependent plasma frequency and corresponding in-plane hyperbolic permittivity region. This result is not expected based only on anisotropic charge mobility but implies that also the effective mass of the charge carriers becomes anisotropic upon polymer alignment. This unique feature is used to demonstrate circularly symmetric nanoantennas that provide different plasmonic resonances parallel and perpendicular to the alignment direction. The nanoantennas are further tuneable via the redox state of the polymer. Importantly, polymer alignment could blueshift the plasma wavelength and resonances by several hundreds of nanometers, forming a novel approach toward reaching the ultimate goal of redox-tunable conducting polymer nanoantennas for visible light.

Breaking through the plasma wavelength barrier to extend the transparency range of ultrathin indium tin oxide films into the far infrared

Indium tin oxide (ITO) film, which is the most commonly used transparent conductive film (TCF), has traditionally been believed to be transparent in the visible spectrum but to reflect infrared (IR) light beyond the plasma wavelength (λp). However, our theoretical analysis challenges this notion by demonstrating that an ultrathin ITO TCF that is thinner than the light's penetration depth can overcome the transmission barrier at λp. To validate the theoretical modeling, we have successfully fabricated ultrathin ITO films that, despite having λp ≈ 1 μm, remain transparent from 400 nm to 20 μm. This represents the broadest transparency range ever reported for any In2O3-based TCF. The 10-nm-thick ITO TCFs have high visible transmittance (91.0% at 550 nm), low resistivity (5 × 10−4 Ω cm), and good IR transmittance (averaging 60% over 1.35–18.35 μm). Their IR transparency facilitates radiative cooling of the underlying circuitry. When an operational resistor is enclosed by commercial ITO TCFs that are 140 nm thick, its temperature increases. However, using 10-nm-thick ITO TCFs instead of the commercial ones can completely avoid this temperature rise. Moreover, attaching a silver grid to a 10-nm-thick ITO TCF can reduce the effective sheet resistance to ∼10 Ω/□ at the expense of only ∼3% transmittance. This development paves the way for large-scale applications that require low sheet resistance and far-IR transparency.

Sharp MIR plasmonic modes in gratings made of heavily doped pulsed laser-melted Ge1-xSnx

Plasmonic structures made out of highly doped group-IV semiconductor materials are of large interest for the realization of fully integrated mid-infrared (MIR) devices. Utilizing highly doped Ge1-xSnx alloys grown on Si substrates is one promising route to enable device operation at near-infrared (NIR) wavelengths. Due to the lower effective mass of electrons in Sn compared to Ge, the incorporation of Sn can potentially lower the plasma wavelength of Ge1-xSnx alloys compared to that of pure Ge. However, defects introduced by the large lattice mismatch to Si substrates as well as the introduction of alloy scattering limit device applications in practice. Here, we investigate pulsed laser melting as one strategy to increase material quality in highly doped Ge1-xSnx alloys. We show that a pulsed laser melting treatment of our Ge1-xSnx films not only serves to lower the material’s plasma frequency but also leads to an increase in active dopant concentration. We demonstrate the application of this material in plasmonic gratings with sharp optical extinction peaks at MIR wavelengths.

Applications of object detection networks in high-power laser systems and experiments

Abstract The recent advent of deep artificial neural networks has resulted in a dramatic increase in performance for object classification and detection. While pre-trained with everyday objects, we find that a state-of-the-art object detection architecture can very efficiently be fine-tuned to work on a variety of object detection tasks in a high-power laser laboratory. In this paper, three exemplary applications are presented. We show that the plasma waves in a laser–plasma accelerator can be detected and located on the optical shadowgrams. The plasma wavelength and plasma density are estimated accordingly. Furthermore, we present the detection of all the peaks in an electron energy spectrum of the accelerated electron beam, and the beam charge of each peak is estimated accordingly. Lastly, we demonstrate the detection of optical damage in a high-power laser system. The reliability of the object detector is demonstrated over 1000 laser shots in each application. Our study shows that deep object detection networks are suitable to assist online and offline experimental analysis, even with small training sets. We believe that the presented methodology is adaptable yet robust, and we encourage further applications in Hz-level or kHz-level high-power laser facilities regarding the control and diagnostic tools, especially for those involving image data.

Relationship between electrical and optical characterization of Ga-doped ZnO thin films deposited by magnetron sputtering

Introduction: Transparent conducting films have received much attention in energy conversion applications. To replace high-cost indium-tin-oxide (ITO), Ga-doped ZnO (GZO) film is considered due to its high conductivity, good transparency, low cost, and low toxicity. Methods: GZO and pure ZnO films were deposited on glass substrates by dc magnetron sputtering. The crystalline structure of the samples was verified by using X-ray diffraction. In particular, the relationship between the electrical and optical characterization of the GZO film was investigated through the plasma wavelength obtained from transmittance and reflectance spectra. Meanwhile, carrier transport was directly confirmed by Hall effect-based measurements. Results: The GZO film shows a hexagonal wurtzite structure, with successful incorporation of Ga into the ZnO lattice. Ga doping increases the carrier concentration, leading to a decrease in the resistivity of the film. This study also discusses the correlation of carrier transport obtained from Hall effect-based measurements and optical spectroscopies. Here, we extracted the optical carrier concentration and optical mobility from the plasma wavelength and compared them with the Hall data. Conclusion: The dependence of carrier transport on ionized impurity scattering can be pointed out. It proposes an effective way to qualitatively predict the electrical characteristics and transport properties of thin films via optical transmittance and reflectance analysis.

Heavily Doped Zinc Oxide with Plasma Frequencies in the Telecommunication Wavelength Range

Heavy and hyper doping of ZnO by a combination of gallium (Ga) ion implantation using a focused ion beam (FIB) system and post‐implantation laser annealing is demonstrated. Ion implantation allows for the incorporation of impurities with nearly arbitrary concentrations, and the laser‐annealing process enables dopant activation close to or beyond the solid‐solubility limit of Ga in ZnO. Heavily doped ZnO:Ga with free‐carrier concentrations of ≈1021 cm−3, resulting in a plasma wavelength of 1.02 μm, which is substantially shorter than the telecommunication wavelength of 1.55 μm is demonstrated. Thus, this approach enables the control of the plasma frequency of ZnO from the far infrared down to 1.02 μm, thus, providing a promising plasmonic material for applications in this regime.

Highly switchable absorption in a metal hydride device using a near-zero-index substrate.

Optical switchability is an important functionality for photonic devices, which allows them to accommodate a wide range of applications. One way to achieve this switchability is to utilize the reversible and tunable optical changes of metal hydrides. When exposed to H2 gas, certain metals go through dramatic changes in optical properties as hydrogen atoms expand the lattice spacing. In this paper, we propose a switchable absorption device consisting of a Pd-capped Mg thin film deposited onto a near-zero-index substrate. By utilizing Mg's extreme optical changes upon hydrogenation and combining it with the high optical contrast of the near-zero-index substrate, we can create a device that is fully switchable from a highly reflective state to a broadband absorbing state. When modeling the substrate as a Drude material with a plasma wavelength of 600 nm, we calculate an absorption change of > 70% from 650-1230 nm, with a peak total absorption of 78% at 905 nm. We experimentally demonstrate this effect using 25 nm of Mg with a 3 nm Pd capping layer deposited onto an ITO-coated glass substrate. This device achieves an absorption change of 76% at 1335 nm illumination, with a maximum absorption of 93% in the hydride state, utilizing ITO's near-zero-index region in the near-infrared. By tuning the near-zero-index region of the substrate, this effect can be extended from the visible through the infrared.

Controlling the characteristics of injected and accelerated electron bunch in corrugated plasma channel by temporally asymmetric laser pulses

In laser-driven plasma wakefield accelerators, the accelerating electric field is orders of magnitude stronger than in conventional radio-frequency particle accelerators, but the dephasing between the ultrarelativistic electron bunch and the wakefield traveling at the group velocity of the laser pulse puts a limit on the energy gain. Quasi-phase-matching, enabled by corrugated plasma channels, is a technique for overcoming the dephasing limitation. The attainable energy and the final properties of accelerated electron beams are of utmost importance in laser wakefield acceleration (LWFA). In this work, using two-dimensional particle-in-cell simulations, the effect of the driving pulse duration on the performance of quasi-phase-matched laser wakefield acceleration (QPM-LWFA) is investigated. It is observed that for a pulse duration around half the plasma period, the maximum energy gain of the beam electrons finds its peak value. However, the results show that for a pulse of that duration the collimation of the bunch is much worse, compared to the case where the pulse duration is twice as long. Furthermore, the dynamics of the laser pulse and the evolution of the quality of the externally-injected electron bunch are studied for a symmetric pulse with sine-squared temporal profile, a positive skew pulse (i.e., one with sharp rise and slow fall), and a negative skew pulse (i.e., one with a slow rise and sharp fall). The results indicate that for a laser pulse with an appropriate pulse length compared with the plasma wavelength, the wakefield amplitude can be greatly enhanced by using a positive skew pulse, which leads to higher energy gain. Initially, this results from the stronger ponderomotive force associated with a fast rise time. Later, due to the distinct evolution of the three pulses with different initial profiles, the wakefield excited by the positive skew pulse becomes even stronger. In our simulations, the maximum energy gain for the asymmetric laser pulse with a fast rise time is almost two times larger than for the temporally symmetric laser pulse. Nevertheless, stronger focusing and defocusing fields are generated as well if a positive skew pulse is applied, which degrade the collimation of the bunch. These results should be taken into account in the design of miniature particle accelerators based on QPM-LWFA.

Plasmonic gratings from highly doped Ge1−y Sn y films on Si

Plasmonic modes in metal structures are of great interest for optical applications. While metals such as Au and Ag are highly suitable for such applications at visible wavelengths, their high Drude losses limit their usefulness at mid-infrared wavelengths. Highly n-doped Ge1−y Sn y alloys are interesting possible alternative materials for plasmonic applications in this wavelength range. Here, we investigate the use of highly n-doped Ge1−y Sn y films grown directly on Si by molecular beam epitaxy with varying Sn-content from 0% up to 7.6% for plasmonic grating structures. We compare plasma wavelengths and relaxation times obtained from electrical and optical characterization. While theoretical considerations indicate that the decreasing effective mass with increasing Sn content in Ge1−y Sn y films could improve performance for plasmonic applications, our optical characterization results show that the utilization of Ge1−y Sn y films grown directly on Si is only beneficial if material quality can be improved.

Tunable double epsilon-near-zero behavior in niobium oxynitride thin films

Refractory transition metal nitrides and oxynitrides are of interest for plasmonic applications due to their increased thermal stability, tunability and comparatively low loss. Presented here is an experimental investigation of reactively sputtered niobium oxynitride thin films, demonstrating screened plasma wavelengths tunable over a ~90 nm spectral range. The optical response is correlated with resistivity and Hall measurements. Additionally, an explanation is provided for the double epsilon-near-zero (2ENZ) behavior observed and it is compared with other material systems. Experimental analysis of film composition and structure are combined with computational modelling, based on density functional theory, to explain the dispersion behavior observed and indicate that 2ENZ behavior arises due to the incorporation of oxygen within the films during deposition.

Novel mechanism for terahertz radiation by oblique colliding of two electron beams in plasma

A new scheme for generating high power terahertz (THz) radiation by using two obliquely colliding electron beams in plasma is proposed. The particle-in-cell (PIC) simulation finds that a small beam intersection of high electron density is formed within a plasma wavelength when two thin electron beams collide. Meanwhile, the beam intersection can oscillate in a strong plasma wave driven by the two beams to produce THz radiation at double plasma frequency. A theoretical model is established showing that the radiation mechanism is the second-order current generated by the beam intersection oscillation. The angular distribution of the THz radiation is calculated by the theory, which agrees well with the PIC simulation. Compared with the existing high power THz sources, the scheme provided in this article has the advantages of a simple structure and no need for extreme parameter conditions, which is hopeful for applications in kilowatt-level coherent compact THz sources.

Kinetic theory of monochromatic waves bunching in a low-voltage beam discharge in rare gases

The kinetic theory of phase focusing, that is bunching in a low-voltage beam discharge in rare gases (LVBD) during the propagation of longitudinal electrostatic oscillations at the Knudsen numbers of the order of unity have developed. The anomalous relaxation of the almost monoenergetic electron beam in momentum and energy is described for the case when this process cannot be explained by electron–atom collisions. The paper has shown the important role of electrons that have the beam energy and isotropic directional distribution, which is formed as a result of elastic collisions between the beam electrons and atoms. The dependence of the anomalous relaxation length on parameters of the LVBD in rare gases is studied.The developed theory makes it possible to quantitatively interpret experimental data on the LVBD under conditions when the electron mean free path is of the order of the interelectrode gap. According to these data, regardless of the density of the charged particles in the LVBD plasma in rare gases, five Langmuir plasma wavelengths fit along the length of the anomalous relaxation of the electron beam. The study of the electron beam dynamics laws in a plasma is important for the development of plasma-electrical devices, where the beam discharge is applied, namely: widely used all-movable stabilizers, sources of intense electromagnetic radiation, controlled elements of electronic circuits, plasma chemical reactors, etc.

The optoelectronic properties of Eu/F-codoped tin oxide, an experimental and DFT study

Tin oxide (TO), F-doped SnO2 (FTO), and Eu/F-codoped SnO2 (EFTO) films were deposited by spray pyrolysis. Additionally, for the DFT calculations, different superstructures were considered as models for TO (SnO2), FTO (Sn36O71F), and EFTO (EuSn35O70F2). Electrical and optical measurements showed that the EFTO films maintain the characteristics of a transparent conducting oxide (TCOs), i.e., high optical transparency and low electrical resistivity (ρ). The plasma wavelength for EFTO thin films was red-shifted when compared to FTO, which is related to the diminishing of free electron density (ne) and the increase of ρ; such effects were promoted by the incorporation of Eu impurities which act as electron acceptors. Photoluminescence (PL) studies revealed that the EFTO films did not show electronic transitions related to Eu states in the visible part of the spectra (vis). On the other hand, the DFT calculations confirmed the experimental results related to the incorporation of Eu/F impurities in TO, such as cell expansion, the creation of direct bandgap TCOs, the appearance of the Burstein-Moss effect, the absence of emission lines in the vis, and the diminishing of ne due to the presence of Eu acceptor states.

Analogue Hawking temperature of a laser-driven plasma

We present a method for exploring analogue Hawking radiation using a laser pulse propagating through an underdense plasma. The propagating fields in the Hawking effect are local perturbations of the plasma density and laser amplitude. We derive the dependence of the resulting Hawking temperature on the dimensionless amplitude of the laser and the behaviour of the spot area of the laser at the analogue event horizon. We demonstrate one possible way of obtaining the analogue Hawking temperature in terms of the plasma wavelength, and our analysis shows that for a high intensity near-IR laser the analogue Hawking temperature is less than approximately 25 K for a reasonable choice of parameters.