Plasma-assisted Chemical Vapor Deposition Method Research Articles

Electrochemical carboxylation: Green synthesis of atrolactic acid using boron-doped diamond electrodes

Electrochemical CO2 fixation is vital for sustainability in the chemical industry, yet the selective synthesis of multi-carbon products remains challenging. Organic electrosynthesis offers promise by enabling precise control over reaction conditions and facilitating novel reactivity patterns. One such technique, electrochemical carboxylation, involves coupling CO2 with organic molecules to produce carboxylic acids. Specifically, electro-carboxylation of acetophenone yields atrolactic acid, a valuable precursor for nonsteroidal anti-inflammatory drugs, providing a greener alternative to traditional production methods. This study focuses on the synthesis and characterization of boron-doped diamond (BDD) films using the microwave plasma-assisted chemical vapor deposition (MP-CVD) method and synthesized BDD electrodes were then used for the electrolytic carboxylation of acetophenone. Various analytical techniques, including X-ray diffraction (XRD), Raman spectroscopy, and laser microscopy, etc. were employed to characterize the BDD films. Various BDD films synthesized for different durations were utilized in the electrolytic carboxylation of acetophenone, with the highest yield of atrolactic acid (25 %) achieved using a BDD film synthesized over 6 h. Also, the effect of BDD surface modification i.e. oxygen and hydrogen terminated BDD on the synthesis of atrolactic acid was studied. Additionally, different electrolytes were employed in the synthesis process of atrolactic acid. A comparative study between Pt and BDD electrodes for the electrolytic carboxylation of acetophenone was conducted, and a mechanism for the formation of atrolactic acid was proposed.

Fabrication of polycrystalline phosphorus-doped diamond electrodes from red phosphorus.

Polycrystalline phosphorus-doped diamond was fabricated by the quartz-tube-type microwave plasma-assisted chemical vapor deposition method. Significantly, red phosphorus was used as a source of phosphorous, instead of PH3. Phosphorus-doped diamond electrodes with hydrogen-terminated and oxygen-terminated surfaces were investigated for the redox reactions of K3[Fe(CN)6] and [Ru(NH3)6]Cl3. The carrier concentration was estimated as 2.1-5.3 × 1018 cm-3 from electrochemical impedance measurements. Polycrystalline phosphorus-doped diamond shows great promise as chemical electrode materials.

Cleaning of nitrogen-containing carbon contamination by atmospheric pressure plasma jet

Atmospheric pressure plasma jet (APPJ) was used to clean nitrogen-containing carbon films (C–N) fabricated by plasma-assisted chemical vapor deposition method employing the plasma surface interaction linear device at Sichuan University (SCU-PSI). The properties of the contaminated films on the surface of pristine and He-plasma pre-irradiated tungsten matrix, such as morphology, crystalline structure, element composition and chemical structure were characterized by scanning electron microscopy, grazing incidence x-ray diffraction and x-ray photoelectron spectroscopy. The experimental results revealed that the removal of C–N film with a thickness of tens of microns can be realized through APPJ cleaning regardless of the morphology of the substrates. Similar removal rates of 16.82 and 13.78 μm min−1 were obtained for C–N films deposited on a smooth pristine W surface and rough fuzz-covered W surface, respectively. This is a remarkable improvement in comparison to the traditional cleaning method. However, slight surface oxidation was found after APPJ cleaning, but the degree of oxidation was acceptable with an oxidation depth increase of only 3.15 nm. Optical emission spectroscopy analysis and mass spectrometry analysis showed that C–N contamination was mainly removed through chemical reaction with reactive oxygen species during APPJ treatment using air as the working gas. These results make APPJ cleaning a potentially effective method for the rapid removal of C–N films from the wall surfaces of fusion devices.

Integration of silicon-vacancy centers in nanodiamonds with an optical nanofiber

We experimentally demonstrate the integration of silicon-vacancy centers in nanodiamonds (SiV-NDs) with an optical nanofiber (ONF). We grow SiV-NDs on seed NDs dispersed on a quartz substrate using a microwave plasma-assisted chemical vapor deposition method. First, we search and characterize SiV-NDs on a quartz substrate using an inverted confocal microscope and an atomic force microscope (AFM). Subsequently, we pick up SiV-NDs from the quartz substrate and deposit them on the surface of a free-standing ONF using the AFM tip. The fluorescence emission spectrum, photon count rate, and intensity correlations for SiV-NDs are systematically measured.

Electrochemical Detection of Plant Pathogens Using Boron-Doped Carbon Nanowalls Immunosensor

This study reports the electrochemical immunosensor development for the detection of bacteria from the <i>Pseudomonas</i> genus &#x2013; the causative of many plant infections, inclusive of canker. This firstly reported assay on carbon-based material included: boron-doped carbon nanowalls (B:CNW) electrodes fabrication, sensor manufacturing, antigen detection, and specificity tests. B:CNW was fabricated by microwave plasma-assisted chemical vapor deposition (CVD) method. Cyclic voltammetry (CV) was applied during the modification step &#x2013; the electrochemical reduction of the diazonium salt. Electrochemical impedance spectroscopy (EIS) measurements confirmed the accurate sensor preparation and were used for the quantitative detection of antigen. The antibodies were utilized as the biological recognition system and immobilized on the sensor surface by covalent linkage. The optimized assay showed high sensitivity towards seven strains of <i>Pseudomonas syringae</i> pv. <i>lachrymans</i> (Psl) in the concentration range of <inline-formula> <tex-math notation="LaTeX">$3.25\times 10^{-3}$ </tex-math></inline-formula>&#x2013; <inline-formula> <tex-math notation="LaTeX">$3.25\times 10^{5}$ </tex-math></inline-formula> CFU/<inline-formula> <tex-math notation="LaTeX">$\mu \text{l}$ </tex-math></inline-formula> (limit of detection, LOD of 0.119 CFU/<inline-formula> <tex-math notation="LaTeX">$\mu \text{l}$ </tex-math></inline-formula>). The specificity of the assay was confirmed on four non-target bacteria: <i>Streptococcus pneumoniae</i>, <i>Streptococcus pyogenes</i>, <i>Bordetella parapertussis</i>, and <i>Haemophilus influenzae</i>. These results indicate the importance of the sensing material choice and its modification procedure as they affect successive analytical performance.

Investigating the corrosion performance of Ti-6Al-4V biomaterial alloy with hydroxyapatite coating by artificial neural network

As a result of its excellent mechanical characteristics and bio-compatibility, the Ti-6Al-4V alloy offers a wide-ranging applications in the medical industry. However, long-term application of these alloys may lead to a decline in corrosion resistance as well as other serious problems in these alloys. To resolve these problems, it is possible to modify the implant surface to enhance the corrosion and bio-compatibility properties. On the Ti-6Al-4V substrate surface, the TiN coating was applied by the Plasma-Assisted Chemical Vapour Deposition (PACVD) method together with the hydroxyapatite coating (HA) using the sol–gel method. Furthermore, the corrosion performance of bio-active hydroxyapatite layer coating on Ti-6Al-4V implant surface was evaluated through the application of the Artificial Neural Network (ANN) and Gene Expression Programming (GEP) models. The generated models were analysed and compared to a response surface methodology (RSM). The hydroxyapatite sol–gel parameters on Ti-6Al-4V implant materials were used as independent variables (input variables). The Ecorr values computed from potentiodynamic polarization measurements were used as a dependent variable (output variable) in the models. The results of the ANN technique (sigmoid activation function, LM training algorithm and 9 neurons in hidden layer) were in good consistent with the experimental Ecorr values, indicating this model is slightly better than the GEP and RSM models. Finally, the findings demonstrated that the ANN technique is an appropriate and robust tool for quantitative modeling of corrosion resistance, and that it can be applied to a variety of surface engineering applications.

Low-Temperature Nitrogen Doping of Nanocrystalline Graphene Films with Tunable Pyridinic-N and Pyrrolic-N by Cold-Wall Plasma-Assisted Chemical Vapor Deposition.

We report a viable method to produce nanocrystalline graphene films on polycrystalline nickel (Ni) with enhanced N doping at low temperatures by a cold-wall plasma-assisted chemical vapor deposition (CVD) method. The growth of nanocrystalline graphene films was carried out in a benzene/ammonia/argon (C6H6/NH3/Ar) system, in which the temperature of the substrate heated by Joule heating can be further lowered to 100 °C to achieve a low sheet resistance of 3.3 kΩ sq–1 at a high optical transmittance of 97.2%. The morphological, structural, and electrical properties and the chemical compositions of the obtained N-doped nanocrystalline graphene films can be tailored by controlling the growth parameters. An increase in the concentration of atomic N from 1.42 to 11.28 atomic percent (at.%) is expected due to the synergetic effects of a high NH3/Ar ratio and plasma power. The possible growth mechanism of nanocrystalline graphene films is also discussed to understand the basic chemical reactions that occur at such low temperatures with the presence of plasma as well as the formation of pyridinic-N- and pyrrolic-N-dominated nanocrystalline graphene. The realization of nanocrystalline graphene films with enhanced N doping at 100 °C may open great potential in developing future transparent nanodevices.

Investigation of optoelectrical and Schottky behavior of diamond-like carbon coating deposited by hollow cathode PACVD method

In the present study, diamond-like carbon (DLC) was deposited on a silicon substrate by hollow cathode plasma-assisted chemical vapor deposition (PACVD) method. After deposition, structural, optical and, electrical properties of DLC were investigated. The Raman spectroscopy proved that DLC layer successfully formed on the substrate. Scanning electron microscopy images showed that the DLC had a smooth and uniform surface with a thickness of about 392 nm. Energy-dispersive X-ray analysis demonstrated the presence of carbon as the main constituent of DLC in the formed layer. The optical properties of DLC were investigated by UV–Vis and photoluminescence spectroscopy. The absorption peak for the DLC was at 370 nm. Based on the results of UV–Vis spectroscopy, a tauc plot was calculated, and it was found that the DLC has a band gap of 2.37 eV. The PL spectra also showed that the DLC layer would emit at 410 nm if adequately excited. Also, the current-voltage characteristic for the Au/DLC/p-Si was measured. Based on the current-voltage results, the sensitivity parameter was calculated, which was equal to 9.71. Finally, based on the measured values, the feasibility of using the DLC layer as a semiconductor for use in Schottky junctions was investigated. • A uniform layer of DLC was deposited on a silicon substrate by hollow cathode PACVD method. •It was found that the DLC layer has a bandgap of 2.37 eV and the absorption peak located at 370 nm, which makes this material suitable for use as a detector in this range. •The gold electrodes were placed on the DLC by a sputtering method to form an Au/DLC/p-Si arrangement as a Schottky junction. •The electrical characterization of the Au/DLC/p-Si device was measured, and its basic parameters calculated, and finally, the possibility of using DLC as a semiconductor in the Schottky junction was investigated.

Analysis of Different Complex Multilayer PACVD Coatings on Nanostructured WC-Co Cemented Carbide

The development of cemented carbides nowadays is aimed at the application and sintering of ultrafine and nano-sized powders for the production of a variety of components where excellent mechanical properties and high wear resistance are required for use in high temperature and corrosive environment conditions. The most efficient way of increasing the tribological properties along with achieving high corrosion resistance is coating. Using surface processes (modification and/or coating), it is possible to form a surface layer/base material system with properties that can meet modern expectations with acceptable production costs. Three coating systems were developed on WC cemented carbides substrate with the addition of 10 wt.% Co using the plasma-assisted chemical vapor deposition (PACVD) method: single-layer TiN coating, harder multilayer gradient TiCN coating composed of TiN and TiCN layers, and the hardest multilayer TiBN coating composed of TiN and TiB2. Physical and mechanical properties of coated and uncoated samples were investigated by means of quantitative depth profile (QDP) analysis, nanoindentation, surface layer characterization (XRD analysis), and coating adhesion evaluation using the scratch test. The results confirm the possibility of obtaining nanostructured cemented carbides of homogeneous structure without structural defects such as eta phase or unbound carbon providing increase in hardness and fracture toughness. The lowest adhesion was detected for the single-layer TiN coating, while coatings with a complex architecture (TiCN, TiBN) showed improved adhesion.

Extremely high-efficient activation of acceptor boron introduced by ion implantation at room temperature with various doping concentrations in epitaxially synthesized diamond films by chemical vapor deposition

We homoepitaxially synthesized a pure diamond film on type Ib base substrates by microwave plasma-assisted special chemical vapor deposition method and then doped B impurity atoms by the ion implantation technique with various doping concentrations from 2×1017 to 2×1019 cm−3 at room temperature followed by activation annealing at 1300 °C. The electrical properties of specific resistance, carrier concentration, Hall mobility, and conductive carrier type were analyzed by Hall effect measurements based on the van der Pauw method at sample temperatures from 77 to 873 K. We consequently realized excellent B-doping in the CVD-synthesized diamond film with a low compensation ratio and perfect doping efficiency and confirmed p-type conduction at almost all temperature ranges for the measured samples. In very lightly doped diamond, we observed first the existence of deep acceptor levels located near 1.85 eV with respect to the valence band maximum and proposed a conduction mechanism based on hopping conduction in deep acceptor levels. We showed the availability of this doping process to high-efficient B doping with various acceptor concentrations in diamond. The great success achieved in the activation of acceptor B implanted in diamond with various doping concentrations should definitely contribute to the progress in the application of diamond-based power semiconductor devices.

Plasma-Assisted Chemical Vapor Deposition of TiBN Coatings on Nanostructured Cemented WC-Co

The plasma-assisted chemical vapor deposition (PACVD) technique has shown many advantages in applications, where thin coatings with superior wear properties are demanded, especially for geometrically complex parts. In this study, multilayered gradient TiBN coatings that were deposited on nanostructured cemented carbides by the PACVD method were investigated. Nanostructured samples of cemented carbides with the addition of 5 and 15 wt.% Co were sintered by the hot isostatic pressing, sinter-HIP technique. Surface preparation was conducted on samples in order to enable maximum coating adhesion. Tests that were conducted on produced samples aimed to investigate the mechanical and physical properties of coated samples. These tests included nanoindentation, surface layer characterization, and coating adhesion evaluation while using the Rockwell and scratch test. The obtained results confirmed that the PACVD process can be utilized for applying thin hard coatings to nanostructured cemented carbides that are produced by the sinter HIP process, resulting in a base material/ coating system that exhibits excellent physical and mechanical properties. The results presented in this paper give a valuable contribution to the research of TiBN coating systems and their potential for application under heavy wear conditions.

Low-strain sensor based on the flexible boron-doped diamond-polymer structures

A free-standing high boron-doped diamond nanosheet (BDDNS) has been fabricated for the development of a flexible BDDNS strain senor. High boron-doped diamond was initially grown on a tantalum substrate in a microwave plasma-assisted chemical vapor deposition method, and was then transferred to a Kapton polymer substrate to fabricate the flexible BDDNS/Kapton device. Before performing the transfer process, the thin BDDNS’s morphology and bonding structure on the top and bottom surfaces were investigated using scanning electron microscopy and Raman spectroscopy. The contact potential difference and work function values of the BDDNS top and bottom surfaces were measured using a Kelvin probe atomic force microscope. Significant electrical conducting properties were observed from the resistance mapping of the BDDNS foil, and the average resistance value of 31 Ω attained from the top surface of the BDDNS foil. The electrical response of the BDDNS/Kapton device was investigated using a custom-made measurement system and a positive residual resistance change with strain was observed. The developed BDDNS/Kapton device was able to sustain for measuring up to 0.55% of strain, which indicates it may have great potential to be utilized in low-strain sensor applications.

Investigation on the corrosion behavior and biocompatibility of Ti-6Al-4V implant coated with HA/TiN dual layer for medical applications

Ti-6Al-4V alloy has wide applications in the medical industry due to its unique mechanical properties and biocompatibility. However, in the long-term use of these alloys, the release of aluminum and vanadium can result in serious illnesses. For solving these problems, the implant surface modification can be done to improve the corrosion and biocompatibility properties. In this study, TiN coating was applied by Plasma-Assisted Chemical Vapour Deposition (PACVD) method along with hydroxyapatite coating (HA) by sol-gel method on Ti-6Al-4V substrate surface. Afterwards, X-ray Diffraction (XRD), Field Emission Scanning Electron Microscopy (FE-SEM), Energy-Dispersive X-ray Spectroscopy (EDS), Atomic Force Microscopy (AFM) and potentiodynamic polarization and electrochemical impedance tests were used for evaluating the phase, morphology, chemical composition, surface roughness, and corrosion behavior in the simulated body fluid (SBF), respectively. Results showed that the surface roughness of HA/TiN, HA, TiN and substrate specimens were the highest to minimum values with roughness of 30.86±0.5, 25.1±0.42, 20.43±0.14 and 15.1±0.02 nm, respectively, and the HA-TiN composite coating had the lowest corrosion current density, highest polarization resistance and corrosion potential. Results of cell viability and proliferation demonstrated that the HA/TiN nanocomposite coating is a good choice for dental and orthopedic implants due to its corrosion resistance and biocompatibility.

Surface and optical properties of indium-rich InGaN layers grown on sapphire by migration-enhanced plasma assisted metal organic chemical vapor deposition

In-rich InGaN nanoscale thin films grown on (0001) sapphire (Al2O3) using migration enhanced plasma-assisted metal-organic chemical vapor deposition (MEPA-MOCVD) method are characterized by high-resolution x-ray diffraction (HR-XRD), x-ray photoelectron spectroscopy (XPS), Raman scattering spectroscopy (RSS), as well as variable angle spectroscopic ellipsometry (VASE). Theoretical calculations were performed to acquire the optical constants and vibrational properties of the films. The indium composition x (In) values determined by HR-XRD and from the surface area calculated by XPS are in good agreement with each other. The valence band maxima of InxGa1−xN films (x = 0.65–0.80) were observed to shift to lower binding energy with the increase of indium concentration. The RSS results confirmed the one-phonon behavior for the A1(LO) and E2(high) modes with x (In)—independent of phonon frequencies of the substrate. The simulated refractive index n was found to increase with In composition, the band gap (Eg) shifted, however, towards the lower energy side. For a given In composition and by increasing the measurement temperature from 30 °C to 600 °C, the variations of optical constants (n and Eg) showed similar trends as in samples with increasing In composition.

Effects of functionally graded TiN layer and deposition temperature on the structure and surface properties of TiCN coating deposited on plasma nitrided H13 steel by PACVD method

The poor adhesion of nitride coatings to steel substrates is one of the main challenges for industrial applications. In this study, plasma nitriding process and TiN functional intermediate layer were used in order to increase the adhesion of TiCN coating to the hot worked steel H13 substrate and also to improve its mechanical properties. The functionally graded nanostructured TiCN coating was deposited using pulsed-DC plasma-assisted chemical vapor deposition (PACVD) method. The coatings microstructural and mechanical properties were investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), optical microscopy (OM), Rockwell-C indentation, micro hardness and ball-on-disk tests. The results showed that peaks of TiN and TiCN phases existed in the XRD pattern and the size of their crystallites is about 7 nm. Carbon and nitrogen contents in the TiCN coating gradually increased from the substrate to its surface. The functional coating prepared at 475 °C had higher adhesion to the substrate in comparison with those deposited at 450 and 500 °C. The high adhesion led to reduction of radial and peripheral cracks within the coating. Decrease in the friction coefficient and lost volume during ball-on-disk tests indicated that the wear resistance of the functional coating deposited at 475 °C was 78% higher than that of the other coatings.

Effect of deposition conditions on optical properties of a-C:H:SiOx films prepared by plasma-assisted chemical vapor deposition method

The a-C:H:SiOx films were deposited on glass substrates by plasma-assisted chemical vapor deposition from mixtures of argon and polyphenylmethylsiloxane vapor. Optical properties of a-C:H:SiOx films were investigated by varying deposition parameters, such as Ar pressure and amplitude of negative pulse of bipolar substrate bias. Optical properties were determined using the transmission spectra T(λ), measured in the spectral range 300–800 nm. It was shown that the integrated transmittance of a-C:H:SiOx films in the visible wavelength range 380–780 nm is 69–89%, depending on the deposition conditions. On the basis of the transmission spectra Tauc optical band gap, wavelength of absorption edge and Urbach energy were calculated. The resulting films exhibit a wide range of properties including hydrogen content from 35% to 39%, optical band gap from 2.3 to 2.6 eV, wavelength of absorption edge from 477 to 537 nm and Urbach energy from 547 to 718 meV. The change in optical properties of a-C:H:SiOx films is associated with a decrease in the size and concentration of graphite-like clusters in the films as a result of the enhancement of ion bombardment of a growing film with increasing of argon pressure and amplitude of negative pulse of bipolar substrate bias. The study of the optical properties of a-C:H:SiOx films showed that they can be used as protective and antireflection films on optical instruments, in particular, on solar cells.

Influence of deposition conditions on mechanical properties of a-C:H:SiOx films prepared by plasma-assisted chemical vapor deposition method

A series of a-C:H:SiOx films was deposited on polished silicon and glass substrates by plasma-assisted chemical vapor deposition combined with pulsed bipolar substrate bias from mixtures of argon and polyphenylmethylsiloxane vapors. Different Ar pressures and substrate bias voltages were applied for the synthesis of a-C:H:SiOx films having different mechanical properties. Detailed characterization of the mechanical properties of a-C:H:SiOx films was made using the nanoindentation. Hardness and elastic modulus were used for the evaluation of the endurance capability (H/E) and resistance to plastic deformation (H3/E2). The structural properties of the deposited films were analyzed by Fourier transform infrared spectroscopy (FTIR) and Raman spectroscopy. It was shown that the Ar pressure and substrate bias variation can change the film properties and the growth rate and these changes are not linear. So, depending upon application, deposition conditions are to be optimized. In all of the examined coatings, increase of Ar pressure and amplitude of negative pulse of substrate bias lead to improvement in mechanical properties. According to the results of FTIR and Raman spectroscopy; this improvement is due to an increase in the sp3 bonded carbon content and decrease of hydrogen content in the films.

A new approach to improve the surface properties of H13 steel for metal forming applications by applying the TiAlN multi-layer coating

This work is an attempt to improve the mechanical and tribological properties of nanostructured TiAlN coatings through the plasma nitriding/TiN/TiAlN/Ti(2)N process for metal forming applictions. The coatings were deposited using the pulsed DC plasma-assisted chemical vapor deposition (PACVD) method at the constant working conditions including the frequency of 10 kHz, the deposition temperature of 470 °C, and the duty cycle of 33%. H2, Ar, and N2 gases and TiCl4 and AlCl3 precursors were fed to the chamber as the depositing agents. The results indicated that the three-layered coatings (TiN/TiAlN/Ti(2)N) have the enhaced adhesion strength and wear resistance than the single-layered ones (TiN or TiAlN). This is also showed that the surface morphology, grain size, and friction coefficient of the TiN coating are respectively smoother, smaller, and lower than those of the TiAlN coating. Accordingly, it was concluded that the Ti(2)N coating as a top coat is an appropriate material to improve the tribological and mechanical properties of nanostructured TiAlN coatings.

Influence of Si content on the wettability and corrosion resistance of nanocomposite TiSiN films deposited by pulsed-DC PACVD

In this paper, in order to improve the wettability and corrosion resistance of Ti-6Al-4V, titanium silicon nitride (TiSiN) films with different Si contents were deposited on this alloy using pulsed-DC plasma-assisted chemical vapor deposition (PACVD) method. The results indicated that the TiSiN films have a nanocomposite microstructure in which the TiN nanocrystallines are surrounded by an amorphous matrix of SiNx. With increasing Si content from 0 to 24.7 wt%, the film's water contact angle reduced from 82.2° to 47.5° due to the formation of a hybrid TiO2/SiO2 surface oxide layer on the TiSiN film and also rising its surface roughness from 21 to 32 nm. The electrochemical studies in a simulated body fluid (SBF) at 37 °C showed that the TiSiN films due to the nanocomposite microstructure, formation of a hybrid SiO2/TiO2 passive oxide layer and lower microstructural defects in comparison with TiN film can act as a more effective protective barrier layer against the corrosive liquid. In the electrochemical impedance spectroscopy (EIS) examinations, the TiSiN film with 12.1 wt% of Si represented the best corrosion resistance compared to the uncoated Ti-6Al-4V alloy and the other TiSiN films with 0, 6.3, 17.8 and 24.7 wt% of Si.

Improving the wear and corrosion resistance of Ti–6Al–4V alloy by deposition of TiSiN nanocomposite coating with pulsed-DC PACVD

In this work, titanium silicon nitride (TiSiN) hard ceramic coatings were deposited on Ti-6Al-4V bio-alloy to improve its wear and corrosion resistance via pulsed-DC plasma-assisted chemical vapor deposition (PACVD) method. The results showed that TiSiN coatings are composed of TiN nano-crystallites embedded in the amorphous SiNx matrix. Increasing the Si content of coating from 0 to 25.1wt%, leads to a significant reduction of its thickness from 4 to 0.5µm due to the occurrence of the controlled surface reaction phenomena. Using SiCl4 as the Si precursor for the TiSiN coatings results in increasing the surface roughness from 20.8nm of the TiN coating up to 31.4nm for the TiSiN coating with 25.1wt% Si due to the strong etching effect of SiCl4. Si addition up to 17.2wt%, reduces the TiN grains size which considerably raises the hardness (about 1000HV0.01) and also wear resistance of TiSiN coating due to the formation of the SiNx amorphous matrix and its grain growth-prohibiting effect. The electrochemical tests in simulated body fluid (SBF) represented the higher corrosion resistance of TiSiN coatings in comparison with Ti-6Al-4V alloy. The higher corrosion resistance of TiSiN coating is related to its nano-composite structure and also the formation of silicon dioxide passive layer beside the titanium dioxide layer on the surface of this coating. The highest wear resistance and corrosion protective efficiency of 77% was achieved for the TiSiN coatings with 17.2wt% and 11.3wt% of Si, respectively.