Planar Waveguide In Nd Research Articles

Refractive index enhanced well-type waveguide in Nd:YGG crystal fabricated by swift Kr8+-ion irradiation

In this work, we introduced a Nd:YGG single mode planar waveguide fabricated by swift heavy ion irradiation. The initial Kr8+ ions beam energy was 2.1 GeV, after passing through the Al foil the beam energy came to 30 MeV. The implantation fluence was 2×1012 ions/cm2. A well region with the refractive index increment in near the surface was obtained after ion irradiation. This index increment was attributed to the ion-induced electronic damage. The characterization of the optical planar waveguide in Nd:YGG crystal was tested by prism coupling and end face coupling method. The micro-luminescence and Raman properties of our ion-irradiation Nd:YGG crystal were investigated. This work has reference value for integrated optical devices on Nd:YGG crystal.

Planar Nd:YGG waveguide fabrication by multiple energy He ion implantation

Rare-earth garnet single-crystals are promising candidates for optical applications. Previous reports showed that they have controllability and good reservation of Nd ions fluorescent properties in the ion implanted waveguide. Thus, we studied the optical and fluorescent properties of the Nd:YGG waveguide structure formed by multi-energy He ion implantation. The fabrication and characterization of the optical planar waveguide in Nd:YGG crystal by using multi-energy He ion implantation was presented. The thermal stability of our ion-implanted Nd:YGG crystal was investigated. The guided-mode and annealing properties at the wavelength of 633nm were investigated through prism-coupling and end-face coupling measurements, and the fluorescent properties were investigated by a confocal micro-luminescence experiment. This work could supply an operation reference for integrated optical devices.

Optical properties of planar waveguide in Nd:YVO4 crystal formed by swift Kr8+ ion irradiation

We report on the fabrication of the planar waveguide in x-cut Nd:YVO4 laser crystal formed by 1.98GeV with the fluence of 2×1010ions/cm2 swift Kr8+ ion irradiation. The investigation of the absorption bands and the photoluminescence spectra demonstrates that the transmission properties of the bulk Nd:YVO4 crystal and the Nd3+ luminescence features have been preserved after ion irradiation. In Raman spectra, the peak positions and peak widths had no obvious change after ion irradiation. The irradiated cross section along with an accurate size measurement of the planar waveguide region buried beneath the surface of the crystal were observed by a microscope with transmitted polarized light. We also measured the near-field intensity distributions of the light in the waveguide by the end-face coupling method.

Continuous wave waveguide lasers of swift argon ion irradiated Nd:YVO_4 waveguides

We report on the fabrication of planar waveguide in Nd:YVO(4) crystal by using swift Ar(8+) ion irradiation. At room temperature continuous wave (cw) laser oscillation at wavelength of ~1067 nm has been realized through the optical pump at 808 nm with a low threshold of 9.3 mW. The slope efficiency of the waveguide laser system is of 8.5%. The optical-to-optical conversion efficiency is 6.6%.

Optical properties of a single mode planar waveguide in Nd:YVO_4 fabricated by multienergy He ion implantation

We fabricated a single-mode planar waveguide in z-cut Nd:YVO(4) by multienergy He ion implantation in total fluence of 4.5×10(16) ions/cm(2) at room temperature and investigated optical properties of Nd:YVO(4) before and after He ion implantation by measuring transmission, confocal microluminescence, and confocal Raman spectra. Absorption bands and the photoluminescence features of the bulk Nd:YVO(4) crystal have been preserved after He ion implantation. In Raman spectra, most of the peak positions and peak widths had no obvious change before and after He ion implantation. The guiding mode and near-field image in the waveguide were measured by the prism coupling method and end-face coupling method, respectively. We investigated the damage behavior of a Nd:YVO(4) waveguide after implantation, annealing treatment by the Rutherford backscattering/channeling technique. The minimum yield of the virgin z-cut Nd:YVO(4) was 1.98%, which increased to 4.73% after He ion implantation and decreased to 3.20% after annealing at 600 K for 30 minutes.

Planar waveguides in Nd:SGG crystal formed by He ion implantation

In this paper, we report on the fabrication of planar waveguides in z-cut Nd:SGG crystals, using 500keV He ion implantation with fluences of 3×1016ions/cm2 at 77K1×1016ions/cm2 at room temperature, annealed at 260°C for 30min. The guiding modes of the planar waveguides were measured by the prism-coupling method at 633nm. The near-field intensity distribution and propagation loss of the light in the waveguides were measured by the end-fire coupling method. The absorption spectra were also measured. The refractive index profile was reconstructed using the intensity calculation method, and the light propagation mode was simulated with the finite-difference beam propagation method. The calculated results were in good agreement with the measured waveguide modes, indicating the feasibility of these designable devices.

Low-dose O3+ ion-implanted active optical planar waveguides in Nd : YAG crystals: guiding properties and micro-luminescence characterization

We report, for the first time to our knowledge, on the active optical planar waveguides in Nd : YAG laser crystals fabricated by O3+ ion implantation at low doses of ∼1014 ions cm−2. The reconstructed refractive index profiles based on the measured dark-mode spectroscopy show that an enhanced refractive index well is created in the near-surface region, forming a non-leaky waveguide structure. With thermal annealing treatment at 260 °C for 90 min, the propagation losses of the waveguides could be reduced to ∼3 dB cm−1 at a wavelength of 632.8 nm. The micro-luminescence investigation reveals that the emission bands of Nd3+ ions are not significantly affected by the waveguide formation processing, which shows promising potentials for efficient waveguide laser operations at near-infrared wavelength bands.

Carbon ion-implanted optical waveguides in Nd:YLiF 4 crystal: Refractive index profiles and thermal stability

We report on the optical planar waveguides in Nd:YLiF 4 laser crystals fabricated by 6.0 MeV C 3+ ion implantation at doses of 1 × 10 15 or 2.5 × 10 15 ions/cm 2, respectively. The refractive index profiles, which are reconstructed according to the measured dark mode spectroscopy, show that the ordinary index had a positive change in the surface region, forming non-leaky waveguide structures. The extraordinary index is with a typical barrier-shaped distribution, which may be mainly due to the nuclear energy deposition of the incident ions into the substrate. In order to investigate the thermal stability of the waveguides, the samples are annealed at temperature of 200–300 °C in air. The results show that waveguide produced by higher-dose carbon implantation remains relatively stable with post-irradiation annealing treatment at 200 °C in air.

Analysis of ion implanted waveguides formed on Nd:YVO4 crystals

This work reports, for the first time to our knowledge, the formation of planar waveguides in Nd:YVO4 by either carbon or proton implantation. The waveguides are characterised using the dark mode method and by spectroscopic studies, indicating that there is a reduction of the refractive index at the end of the ion track. Particularly, carbon implantation generates a considerable variation in the guiding region. It is shown that the waveguiding structure preserves the spectroscopic properties of the Nd3+ ions, thus maintaining the crystal quality.