Picosecond Semiconductor Laser Research Articles

Generation of difference-frequency radiation in mid- and far-IR ranges by using subpicosecond and picosecond semiconductor lasers

The possibility of the efficient generation of difference-frequency radiation in the mid- and far-IR spectral ranges in the case of phase matching between a nonlinear polarisation wave and a radiation mode at the difference frequency by using ∼1-μm subpicosecond and picosecond semiconductor lasers is considered. For a laser with a planar waveguide of width 100 μm emitting 100-W pulses and 10 W of cw power the near-IR range, the output power at the difference frequency achieves 1 mW in the wavelength region from 5 to 9 μm and 0.2 mW in the wavelength region above 60 μm at room temperature.

Two-photon bioimaging utilizing supercontinuum light generated by a high-peak-power picosecond semiconductor laser source

We developed a novel scheme for two-photon fluorescence bioimaging. We generated supercontinuum (SC) light at wavelengths of 600 to 1200 nm with 774-nm light pulses from a compact turn-key semiconductor laser picosecond light pulse source that we developed. The supercontinuum light was sliced at around 1030- and 920-nm wavelengths and was amplified to kW-peak-power level using laboratory-made low-nonlinear-effects optical fiber amplifiers. We successfully demonstrated two-photon fluorescence bioimaging of mouse brain neurons containing green fluorescent protein (GFP).

Polarization and kinetic properties of the luminescence of nonequilibrium forms of dimethylaminobenzonitrile

The time characteristics of the decay and polarization of the luminescence of dimethylaminobenzonitrile in polar solutions excited by a picosecond semiconductor laser at a wavelength of 403 nm are investigated. Under these conditions, nonequilibrium forms of the molecules studied are excited. The characteristics of the luminescence of these forms yield information about their nature and properties. The components of the decay, duration, and polarization of this luminescence in different spectral regions of the emission band are obtained and analyzed.

Picosecond semiconductor lasers with an external fibre resonator

The passive mode-locking regime of multisection GaAlAs heterostructure laser diodes has been studied. Pieces of single-mode optical fibres with an edge nonselective mirror or a fibre Bragg grating have been used as an external cavity. Regular trains of optical pulses a few picosecond long and with a peak power of a few watts have been obtained under dc current injection. Spectral characteristics of the pulses are crucially dependent on the parameters and adjustment of the external cavity.

Picosecond semiconductor lasers with a multisection saturable absorber, fabricated by heavy ion implantation

A method of implanting high-energy heavy ions across the emitter layer of a semiconductor laser has been developed to create distributed regions of ultrafast saturable absorber integrated into the cavity of a quantum-well laser. This method was used to fabricate picosecond laser diodes having high average powers and to demonstrate colliding-pulse mode-locking of a diode laser with a multisection saturable absorber.

Experimental observation of coherent optical oscillations in picosecond semiconductor lasers under strong-field conditions

Extremely-high-frequency (1.1 THz) coherent oscillations of the optical field emitted by a semiconductor laser were observed for the first time. The optical spectrum had a doublet structure with a 2.6 nm separation. The oscillation frequency depended on the pumping conditions and was not equal to the reciprocal of the round-trip time of the laser cavity. The power density of the laser radiation was estimated to be in the range of 109 W cm-2.

Measurement of picosecond semiconductor laser pulse duration with internally generated second harmonic emission

We demonstrate a simple practical technique for the measurement of the duration of picosecond semiconductor laser pulses using the internally generated second harmonic emission accompanying the laser output. The pulse duration is determined by the ratio of the conversion efficiencies of the second harmonic emission generated by the picosecond pulses and by the cw emission or other pulsed emission whose duration can be accurately measured. The pulse duration thus measured is in close agreement with that determined by the nonlinear intensity autocorrelation technique.

Picosecond semiconductor laser radar with optical amplifier

An optical range finder, which uses the same semiconductor laser as both an optical pulse source and an optical preamplifier of the reflected pulse, is reported. This method has the advantage of reducing the number of optical components that must be aligned, which makes it suitable as a picosecond laser radar in aerospace applications. The device showed a maximum optical gain of 17 dB with a dynamic range of 33 dB, and the obtained resolution was of the order of 1 mm.

Triple synchronization of a picosecond semiconductor laser with two mode-locked dye lasers

Get PDF Email Share Share with Facebook Tweet This Post on reddit Share with LinkedIn Add to CiteULike Add to Mendeley Add to BibSonomy Get Citation Copy Citation Text C. G. Bethea, B. F. Levine, R. J. Nelson, and J. P. van der Ziel, "Triple synchronization of a picosecond semiconductor laser with two mode-locked dye lasers," Appl. Opt. 21, 1345-1346 (1982) Export Citation BibTex Endnote (RIS) HTML Plain Text Citation alert Save article