Photoresponse Of Photodetectors Research Articles

Two-dimensional molybdenum ditelluride waveguide-integrated near-infrared photodetector

Low-cost, small-sized, and easy integrated high-performance photodetectors for photonics are still the bottleneck of photonic integrated circuits applications and have attracted increasing attention. The tunable narrow bandgap of two-dimensional (2D) layered molybdenum ditelluride (MoTe2) from ∼0.83 to ∼1.1 eV makes it one of the ideal candidates for near-infrared (NIR) photodetectors. Herein, we demonstrate an excellent waveguide-integrated NIR photodetector by transferring mechanically exfoliated 2D MoTe2 onto a silicon nitride (Si3N4) waveguide. The photoconductive photodetector exhibits excellent responsivity (R), detectivity (D*), and external quantum efficiency at 1550 nm and 50 mV, which are 41.9 A W−1, 16.2 × 1010 Jones, and 3360%, respectively. These optoelectronic performances are 10.2 times higher than those of the free-space device, revealing that the photoresponse of photodetectors can be enhanced due to the presence of waveguide. Moreover, the photodetector also exhibits competitive performances over a broad wavelength range from 800 to 1000 nm with a high R of 15.4 A W−1 and a large D* of 59.6 × 109 Jones. Overall, these results provide an alternative and prospective strategy for high-performance on-chip broadband NIR photodetectors.

Ultrafast-response and broad-spectrum polarization sensitive photodetector based on Bi1.85In0.15S3 nanowire

Alloying of semiconductors is a good strategy to manipulate their electronic band structures, which can broaden the photoresponse range of the corresponding optoelectronic devices. In addition, building a Schottky diode and improving the crystal quality of the channel semiconductor can improve the photoresponse speed of the optoelectronic device. Here, we report the design and preparation of Bi1.85In0.15S3 nanowires by a facile chemical vapor transport method. The individual Bi1.85In0.15S3 nanowire photodetectors realize excellent photoresponse in a broadband range from solar-blind deep ultraviolet (266 nm) to near-infrared (830 nm), and the obtained maximum external photoresponsivity of 95.99 A/W and detectivity of about 3.52×1011 Jones at 638 nm. Furthermore, the photodetectors also exhibit the ultrafast photoresponse speed with the rise time of 190 ns and the fall time of 180 ns, owing to the high crystal quality and the Schottky contacts between the Au electrodes and nanowires. In addition, the photoresponse of photodetectors is polarization angle sensitive in a broadband range from 266 to 808 nm, and the obtained maximum dichroic ratio is 3.54 at 808 nm, which results from the structural anisotropy of the Bi1.85In0.15S3 crystal. These performances are superior to the reported Bi2S3, In2S3, and other Bi or In sulfide nanowire photodetectors. The results render (BixIn1−x)2S3 photodetectors have significant application potentials in multifunctional optoelectronics and electronics.

The realization of nipip HIT photodetectors with an optimized thickness of intrinsic a-Si:H

In this paper, we propose a nipip HIT structure based on the most efficient heterojunction photovoltaic structure to apply in photodetectors. At–2 V, the white-light responsivities are 1.9 mA/W and 206.2 mA/W for nipip HIT photodetectors with 5-nm-thick and 40-nm-thick top a-Si:H(i), respectively. The external quantum efficiency of nipip HIT photodetectors shows that the HIT structure with 40-nm-thick top a-Si:H(i) has a much larger quantum efficiency than the one with 5-nm-thick a-Si:H(i) at the wavelength range of 400–700 nm. Although the c-Si is not well passivated by a-Si due to the long exposure time in the air before ITO deposition, it gives us the best chance to see the contribution of a-Si on quantum efficiency. This study successfully demonstrated our previous simulation results that an appropriate increase in the thickness of a-Si:H(i) is beneficial for nipip HIT photodetectors. In contrast, the more significant UV (∼300 nm) photo-response of photodetectors with 5-nm-thick top a-Si:H(i) gives us more insight into carrier transport within the surface of the a-Si layer, and it is preferred for UV detection.

The role of silver doping in tuning the optical absorption, energy gap, photoluminescence properties of NiO thin films for UV photosensor applications

NiO thin films were grown systematically using the nebulizer spray pyrolysis (NSP) method with different additions of Ag 1%, 2%, and 3% respectively. A photodetector was fabricated using NiO:Ag thin films. The structural, morphological, compositional, optical, and electrical properties of NiO:Ag thin films were studied as a function of Ag addition. XRD studies show a gradual reduction in the intensity and the broadening with Ag addition, which confirms the formation of nanoparticles. Ag phase has been formed after 3% of Ag addition. Compositional studies using EDS confirms the presence of all the elements. The energy band gap of films is found to be in the range 3.25–3.45 eV with an Ag addition of 1–3%. I–V characteristics and photoresponse of photodetectors were recorded under UV light illumination. The parameters of a photodetector such as external quantum efficiency, responsivity and detectivity were calculated. The observed photo responsivity increases with an increase of Ag (1%) and decreases further higher Ag concentrations.The maximum responsivity is observed for the NiO film with 1%Ag. The photoresponse of all samples confirmed the stable and reproducible characteristics such as external quantum efficiency, responsivity and detectivity.The enhanced properties observed for 1% of Ag-doped film may find applications in the fabrication of optoelectronic devices.

Ferromagnetic CoSe broadband photodetector at room temperature

Broadband infrared photodetectors based on two-dimensional (2D) materials which are the research focus in the infrared field, have wide applications in remote sensing, thermal imaging, and astronomy observation. In this article, the photodetector based on 2D ferromagnetic material CoSe is studied at room temperature, demonstrating the air-stable, broadband, and up to long wavelength properties. The CoSe material is applied to infrared photodetectors for the first time. The 2D material CoSe is synthesized by using the chemical vapor deposition method. The size of the as-grown CoSe is up to 71.8 μm. The photoresponse of the CoSe photodetector ranges from 450 nm to 10.6 μm. The photoresponsivity of this photodetector is up to 2.58 A W−1 under the 10.6 μm illumination at room temperature. This work provides a new material for broadband photodetector at room temperature and builds a bridge for the magnetoelectronic and broadband photoelectric fields.

Metamaterial grating-integrated graphene photodetector with broadband high responsivity

Graphene has some outstanding properties in the photoelectric field, especially ultra fast response and broad spectrum absorption, which have led to strong attraction on graphene photodetector. However, the photoresponsivity of pure graphene device is below 10 mA W−1. It would limit the application of graphene photodetector. Here, we design a metamaterial structure with a broadband high absorption spectrum. And by integrating it into the graphene photodetector, the high photoresponsivity of a pure graphene photodetector in a broadband range could be acquired. The photoresponsivity of photodetector can achieve nearly 200 mA W−1, which is two orders higher than the one of pure monolayer graphene photodetector. Besides, the photodetector also keeps the broadband photoresponse. The hot carriers can be generated by coupling of multiple resonances and effectively transported to graphene with the advantage of ultrathin metal film. Based on this work, more potential applications of graphene photodetector could be developed in some related fields.