Integration Of Photonic Devices Research Articles

Effective InAsP dislocation filtering layers for InP heteroepitaxy on CMOS-standard (001) silicon

In this work, we report InAsP-based dislocation filter layers (DFLs) for InP heteroepitaxy on CMOS-standard (001) Si substrates, demonstrating a threading dislocation density of 3.7 × 107 cm−2. The strain introduced by InAsP induces dislocation bending at the InAsP/InP interface, thereby facilitating the reaction and annihilation of dislocations during their lateral glide. Concurrently, the InP spacer exhibits tensile strain, leading to the formation of stacking faults (SFs). With a comprehensive analysis utilizing x-ray diffraction, electron channeling contrast imaging, and transmission electron microscopy, the effects of DFL-induced strain on dislocations and SFs are investigated. Fine-tuning the strain conditions allowed low-dislocation-density while SF-suppressed, anti-phase boundary free InP on Si. This work, therefore, provides a useful buffer engineering scheme for monolithic integration of InP-based electronic and photonic devices onto the industry-standard silicon platform.

Compact Silicon-Arrayed Waveguide Gratings with Low Nonuniformity.

Array waveguide gratings (AWGs) have been widely used in multi-purpose and multi-functional integrated photonic devices for Microwave photonics (MWP) systems. In this paper, we compare the effect of output waveguide configurations on the performance of AWGs. The AWG with an output waveguide converging on the grating circle had larger crosstalk and lower nonuniformity. We also fabricated a 1 × 8 AWG with an output waveguide converging onto the SOI's grating circle, whose central operation wavelength was around 1550 nm. The fabricated AWG has a chip size of 500 μm × 450 μm. Experimental results show that the adjacent channel crosstalk is -12.68 dB. The center channel insertion loss, as well as 3 dB bandwidth, are 4.18 dB and 1.22 nm at 1550 nm, respectively. The nonuniformity is about 0.494 dB, and the free spectral range is 19.4 nm. The proposed AWG is expected to play an important role in future MWP systems given its good nonuniformity and insertion loss level.

(Invited) Eu- Oxide and Oxyhydroxide Nanofilms for Luminescent Photonic Components

Optically-doped rare-earth (RE) nanostructures find application in a diverse range of fields, including lighting (e.g. LEDs), displays, quantum memories, and biosensors such as luminescent nano-thermometers [1-5]. This is possible thanks to the ability of RE ions to provide robust and reliable light emission when incorporated in a solid. Since their performance depends critically on the composition and structure of the host material in order to successfully implement these RE-doped solids in technological applications it is desirable to achieve the controlled growth of low dimensional nanostructures that show efficient emission. This will enable on-chip component fabrication and their integration in photonic devices. The starting point of such technological development is the preparation of light emitting nanometer-thick films.In this contribution, we present an alternative approach for the development of europium-based nanofilms, departing from conventional doping methods that rely on host matrices, typically oxides and oxinitrides of diverse elements, to encapsulate the Eu2+ or Eu3+ emitter ions [4-6]. We highlight the efficacy of employing direct Eu compounds, maximizing the number of active emitters in the nanofilms and resulting in the observation of intense emission from these nanostructures. Our search started with original studies on Eu oxides (EuOx 1/3<x<1), and demonstrated a broad tuning of their emission by controlling their stoichiometry [1]. In this context, we present the progress achieved through the successful fabrication of europium oxyhydroxide (EuOOH) nanofilms [7]. It is noteworthy that the conventional method for producing hydroxides and oxyhydroxides involves chemical hydrothermal procedures with multiple steps, including dehydration, ultimately yielding powders and micro-crystals unsuitable for integration. In contrast, our methodology employs a clean physical evaporation technique under vacuum conditions, yielding thin films ready for integration. Crystalline monoclinic EuOOH nanofilms were successfully grown on silicon substrates by using pulsed laser deposition (PLD) and a subsequent annealing at a low temperature (250ºC). We will provide evidence of the physical mechanisms governing OH incorporation and discuss the influence of oxygen (O) and hydroxyl (OH) content on the resulting red emission of the Eu3+ ions related to the 5D0→2FJ transition, and on the optical properties of the films through the visible and infrared spectrum.[1] A. Mariscal-Jiménez et al, J. Phys. Chem. C 2020, 124, 15434.[2] P. Gomez-Rodriguez, et al, Nanophotonics 2021, 16, 3995-4007.[3] T. Zhong and P. Goldner, Nanophotonics 2019, 8, 2015.[4] D. Jaque and F. Vetrone, Nanoscale 2012, 4, 4301.[5] I. Camps, A. Mariscal-Jiménez, and R. Serna, Appl. Surf. Sci. 2023, 613, 1.[6] C. W. Bond et al. Opt. Mater. 2021, 122, 111796.[7] A. Caño, B. Galiana, G. B. Perea, J. Gonzalo and R. Serna, Appl. Surf. Sci. 2023, 640, 158236.

Design and simulation of a compact polarization beam splitter based on dual-core photonic crystal fiber with elliptical gold layer

For the polarization multiplexing requirements in all-optical networks, this work presents a compact all-fiber polarization beam splitter (PBS) based on dual-core photonic crystal fiber (PCF) and an elliptical gold layer. Numerical analysis using the finite element method (FEM) demonstrates that the mode modulation effect of the central gold layer effectively reduces the dimensions of the proposed PBS. By determining reasonable structural parameters of the proposed PCF, the coupling length ratio (CLR) between X- and Y-polarized super-modes can approach 2, achieving a minimal device length of 0.122 mm. The PBS exhibits a maximum extinction ratio (ER) of − 65 dB at 1.55 μm, with an operating bandwidth spanning 100 nm (1.5–1.6 μm) and a stable insertion loss (IL) of ~ 1.5 dB at 1.55 μm. Furthermore, the manufacture feasibility and performance verification scheme are also investigated. It is widely anticipated that the designed PBS will play a crucial role in the ongoing development process of miniaturization and integration of photonic devices.

Mid‐Infrared Optoelectronic Waveguide Devices with 2D Materials

AbstractMid‐infrared (Mid‐IR) integrated optics has tremendous applications in spectroscopic sensing, imaging, and ranging. Compared with visible light and near‐IR wavelengths, the study of mid‐IR photonic integrated devices is limited due to the need for more suitable materials and designs for constructing high‐performance on‐chip optoelectronic devices. Integrating emerging 2D materials with novel waveguide devices opens an avenue to boost the development of high‐performance optoelectronic waveguide devices operating in the mid‐IR wavelength range. This review summarizes the previous progress, current status, and future trends in exploring mid‐IR optoelectronic waveguide devices with 2D materials. Specifically, the authors focus on the research efforts of developing passive photonic devices, modulators, photodetectors, and light sources. Then, the challenges and prospects in this area are discussed. The paper provides a valuable reference for researchers in infrared physics, optoelectronics, integrated optics, material science, sensing, and spectroscopy.

Application of graphene-based metasurface plasma-induced transparency in terahertz band optical switches

In this paper, a monolayer graphene-based metasurface that can achieve plasma-induced transparency (PIT) is proposed. This metasurface consists of a horizontal strip and a pair of vertical ribbons. The simulation results of Finite-Difference Time-Domain (FDTD) method perfectly match with the theoretical results based on Coupled-mode Theory (CMT). Based on the dynamic modulation characteristics of graphene, an optical switch is studied with a vibration amplitude of 94.7%, 89.59% and 89.58%, corresponding to frequencies of 3.34 THz, 3.86 THz and 4.36 THz, respectively. The proposed graphene-based metasurface has potential applications in mid-infrared photoconducting devices, this work has a certain theoretical significance for the development of terahertz dynamic integrated photonic devices.

VO2-Based metasurface for dynamically tunable terahertz surface plasmonic waves

Surface plasmonic waves (SPWs), which propagate along metal-dielectric interfaces, play a pivotal role in various photonic applications such as highly integrated photonic devices, super-resolution imaging, high-sensitivity sensing, on-chip integrated systems, etc. The ability to control the excitation direction of the SPWs is of great importance in these applications. In this work, we propose a terahertz on-chip metasurface device whose SPWs propagation direction can be dynamically tuned at the excitation source by exploiting the vanadium dioxide (VO2). Under circularly polarized light incidence, destructive or constructive interference formed in the subwavelength square ring slit resonators (SRSRs) arrays, resulting in the unidirectional propagation of terahertz SPWs. By adjusting the conductivity of VO2, the flexible control over the propagation direction of SPWs is realized. This approach significantly enhances the level of control compared to previous traditional polarization control method which can only be modulated by the polarization state, marking a notable advancement in the development of functional devices that harness the power of SPWs.

Ultra-compact microring optical isolator using an aluminum-substituted cobalt ferrite thin film

Yttrium iron garnets, which are typically used as magneto-optical isolators, are not suitable for monolithic integration with photonic circuits. We experimentally demonstrated an ultracompact microring optical isolator using an aluminum-substituted cobalt ferrite (CAFO) thin film directly deposited on silicon waveguides. The device footprint was only 43×71µm2. The isolator can operate without an external magnet owing to the strong remanent magnetization of the CAFO film and achieved a maximum isolation ratio of 24.7 dB at a wavelength of 1545.7 nm. Our study could facilitate integration of nonreciprocal photonic devices on Si platforms.

Integrated Ultra‐Wideband Dynamic Microwave Frequency Identification System in Lithium Niobate on Insulator

AbstractThe capability to identify the frequency of unknown microwave signals with an ultra‐wide measurement bandwidth is highly desirable in radar astronomy, satellite communication, and 6G networks. Compared to electronic solutions, the integrated photonic technology‐enabled dynamic instantaneous frequency measurement (DIFM) approach is attractive as it offers unique advantages, such as ultra‐wide frequency measurement bandwidth, high flexibility, and immunity to electromagnetic interference. However, so far the bandwidth of the reported DIFM systems based on integrated photonic technology is limited to below 30 GHz due to the finite bandwidth of electro‐optical modulators (EOMs), limiting their applications, particularly in the field of millimeter wave technology (30–300 GHz). Here, the first integrated dynamic microwave instantaneous frequency measurement system with a record‐breaking operation bandwidth (ranging from 5 to 65 GHz) and low root‐mean‐square (RMS) error (≈300 MHz) is presented on the lithium niobate on insulator (LNOI) integrated photonic platform. This demonstration paves the way for high‐performance millimeter wave photonic integrated devices using the LNOI platform.

Integrating inverse design and partially etched platform: an ultra-compact polarization splitter and rotator as an example

Silicon photonics devices benefit greatly from a partially etched platform and inverse design. Herein, we propose a bi-layer polarization splitter and rotator with a topology pattern and demonstrate it on a silicon-on-insulator platform. Our device exhibits a significantly reduced physical footprint of only 2µm×6µm, compared to traditional directional couplers and tapered waveguides. The device accomplishes the functions of polarization conversion and separation in such a compact design without redundant tapered or bending waveguides. The tested minimum insertion loss with the fabrication batch reaches 0.57 and 0.67 dB for TE and TM modes, respectively. The TE mode demonstrates a wider bandwidth and lower ILs than the TM modes, averaging around 1 dB from 1530 to 1565 nm. The M modes exhibit approximately 2 dB ILs at the same wavelength range, decreasing to about 1 dB between 1565 and 1580 nm. Improved designs and fabrication conditions strongly suggest the potential for further performance enhancement in the device. This successful initiative validates the exceptional performance resulting from the integration of the partially etched platform and inverse design, providing valuable insights for future photonic integrated device designs.

Robust ultra-high-Q Fano resonance for topological corner and ring-cavity mode coupling in Kagome photonic systems

Corner and edge states in higher-order topological insulators provide new degrees of freedom for manipulating light propagation. Our research demonstrates that the topological waveguide coupled to the corner and edge states of the triangular cavity obtains a topological corner mode as narrow resonance and a topological ring-cavity mode as broad resonance, respectively. By adjusting the size of the dielectric column at the apex of the triangular cavity, the two modes can be coherently coupled at the same frequency position and obtain a high-Q Fano resonance. This Fano resonant has excellent robustness for unavoidable defects in the manufacturing process, paving the way for the design of high-performance lasers, switches, and other micro-nano integrated photonics devices.

Ultra-compact exciton polariton modulator based on van der Waals semiconductors

With the rapid emergence of artificial intelligence (AI) technology and the exponential growth in data generation, there is an increasing demand for high-performance and highly integratable optical modulators. In this work, we present an ultra-compact exciton-polariton Mach–Zehnder (MZ) modulator based on WS2 multilayers. The guided exciton-polariton modes arise in an ultrathin WS2 waveguide due to the strong excitonic resonance. By locally exciting excitons using a modulation laser in one arm of the MZ modulator, we induce changes in the effective refractive index of the polariton mode, resulting in modulation of transmitted intensity. Remarkably, we achieve a maximum modulation of −6.20 dB with an ultra-short modulation length of 2 μm. Our MZ modulator boasts an ultra-compact footprint area of ~30 μm² and a thin thickness of 18 nm. Our findings present new opportunities for the advancement of highly integrated and efficient photonic devices utilizing van der Waals materials.

Loading-effect-based three-dimensional microfabrication empowers on-chip Brillouin optomechanics.

The acousto-optic interaction known as stimulated Brillouin scattering (SBS) has emerged as a fundamental principle for realizing crucial components and functionalities in integrated photonics. However, the main challenge of integrating Brillouin devices is how to effectively confine both optical and acoustic waves. Apart from that, the manufacturing processes for these devices need to be compatible with standard fabrication platforms and streamlined to facilitate their large-scale integration. Here, we demonstrate a novel, to the best of our knowledge, suspended nanowire structure that can tightly confine photons and phonons. Furthermore, tailored for this structure, we introduce a loading-effect-based three-dimensional microfabrication technique, compatible with complementary metal-oxide-semiconductor (CMOS) technology. This innovative technique allows for the fabrication of the entire structure using a single-step lithography exposure, significantly streamlining the fabrication process. Leveraging this structure and fabrication scheme, we have achieved a Brillouin gain coefficient of 1100 W-1m-1 on the silicon-on-insulator platform within a compact footprint. It can support a Brillouin net gain over 4.1 dB with modest pump powers. We believe that this structure can significantly advance the development of SBS on chip, unlocking new opportunities for a large-scale integration of Brillouin-based photonic devices.

Controllable Fabrication of Organic Semiconductors for Aligned Microlasers and Integrated Photodetectors

AbstractEngineering of organic single crystal toward controllable and aligned patterns at microscale is crucial to the realization of highly integrated organic photonic devices and optoelectronics. However, precise positioning and controllable morphology of crystal structures is still challenging due to the strict conditions for crystal growth. In this paper, a solution based crystal regulation strategy with the assistance of template‐constrained growth method and femtosecond laser processing technology is developed to prepare aligned crystalline microribbon arrays. Simple solvent evaporation results in the random distribution and orientation of self‐assembled crystalline microribbons while it tends to form highly crystalline and orderly microribbon arrays assisted by the confined template microchannels. The large‐scale microribbon array can be fabricated as organic photodetectors with sensitive and fast response under 405 nm illumination. By virtue of the femtosecond laser processing technique, the microribbon arrays are precisely processed into a series of crystal subunits and each microribbon subunit can function as an individual microcavity resonator to produce stable, high‐quality organic laser. The facile solution based template‐constrained self‐assembly and femtosecond laser processing method provide novel strategies to generate highly oriented and controllable crystal structures for the potential applications in integrated organic lasers and optoelectronics.

Inorganic perovskite-based active multifunctional integrated photonic devices

The development of highly efficient active integrated photonic circuits is crucial for advancing information and computing science. Lead halide perovskite semiconductors, with their exceptional optoelectronic properties, offer a promising platform for such devices. In this study, active micro multifunctional photonic devices were fabricated on monocrystalline CsPbBr3 perovskite thin films using a top-down etching technique with focused ion beams. The etched microwire exhibited a high-quality micro laser that could serve as a light source for integrated devices, facilitating angle-dependent effective propagation between coupled perovskite-microwire waveguides. Employing this strategy, multiple perovskite-based active integrated photonic devices were realized for the first time. These devices included a micro beam splitter that coherently separated lasing signals, an X-coupler performing transfer matrix functions with two distinguishable light sources, and a Mach-Zehnder interferometer manipulating the splitting and coalescence of coherent light beams. These results provide a proof-of-concept for active integrated functionalized photonic devices based on perovskite semiconductors, representing a promising avenue for practical applications in integrated optical chips.

Ambient Degradation Anisotropy and Mechanism of van der Waals Ferroelectric NbOI2.

The spontaneous centrosymmetry-breaking and robust room-temperature ferroelectricity in niobium oxide dihalides spurs a flurry of explorations into its promising second-order nonlinear optical properties, and promises potential applications in nonvolatile electro-optical and optoelectronic devices. However, the ambient stability of the niobium oxide dihalides remains questionable, which overshadows their future development. In this work, the chemical degradation of NbOI2 is comprehensively investigated using combined chemical and optical microscopies in conjunction with spectroscopies. We unveil the highly anisotropic degradation kinetics of NbOI2 driven by the hydrolysis process of the unstable dangling iodine bonds dominantly on the (010) facet and progressing along the c axis. Knowing its degradation mechanism, the NbOI2 flake can then be stabilized by the hexagonal boron nitride encapsulation, which isolates the air moisture. These findings provide direct insights into the ambient instability of NbOI2, and they deliver possible solutions to circumvent this issue, which are essential for its practical integration in photonic and electronic devices.

CMOS-compatible 6-inch wafer integration of photonic waveguides and uniformity analysis.

In this work, we demonstrate photonic fabrication by integrating waveguide resonators and groove structures using cost-effective i-line stepper lithography on a 6-inch full wafer. Low-loss silicon nitride (SiN) waveguide can be realized with the quality (Q) factor of waveguide resonators up to 105. In addition, groove structures are also integrated by the full-wafer process, providing long-term stability of coupling and package solutions. The uniformity of different die locations is verified within the full wafer, showing the good quality of the fabricated photonic devices. This process integration of photonic devices provides the potential for mass-productive, high-yield, and high-uniformity manufacturing.

20µm Micro-LEDs Mass Transfer via Laser-Induced In Situ Nanoparticles Resonance Enhancement.

Ultrafast laser is expected as a promising strategy for micro-LEDs (µ-LEDs) transfer due to its inherent property of suppressing thermal effects. However, its ultrahigh peak power and the unclear transfer mechanism make its transfer quality and efficiency unsatisfactory. Here, the study reports the high-precision mass transfer of 20µm fine-pitch µ-LEDs via in situ nanoparticles (NPs) resonance enhancement in burst mode ultraviolet picosecond laser irradiation. This technique suppresses the thermal melting effect and rapid cooling behavior of plasma by temporal modulation of the burst mode, generating NPs-induced resonance enhancement that accurately and controllable drives a single unit up to tens of thousands of µ-LEDs. The transfer of large µ-LED arrays with more than 180 000 chips is also demonstrated, showing a transfer yield close to 99.9%, a transfer speed of 700 pcs s-1, and a transfer error of <±1.2µm. The transferred µ-LEDs perform excellent optoelectronic properties and enable reliable device operation regardless of complex strain environments, providing a reliable strategy for preparing broader classes of 3D integrated photonics devices.

On-Chip Meta-Optics for Engineering Arbitrary Trajectories with Longitudinal Polarization Variation.

On-chip integrated meta-optics promise to achieve high-performance and compact integrated photonic devices. To arbitrarily engineer the optical trajectory along the propagation path in an on-chip integrated scheme is of significance in fundamental physics and various emerging applications. Here, we experimentally demonstrate an on-chip metasurface integrated on a waveguide to enable predefined arbitrary optical trajectories in the visible regime. By transformation of the transverse phase to generate longitudinal mapping, the guided waves are extracted and molded into any different optical trajectories (parabola, hyperbola, and cosine). More intriguingly, predefined polarization states with longitudinal variation are also successfully imparted along the trajectory. Owing to the on-chip propagation scheme, the trajectories are uniquely free from zero-order diffraction interference, naturally having a higher signal-to-noise ratio beyond conventional free-space forms. Overall, such on-chip optical trajectory engineering allows for miniaturized integration and can find paths in potential applications of complex optical manipulation, advanced laser fabrication, and microscopic imaging.

1.3-µm identical active electro-absorption modulated laser with quantum well intermixed passive waveguide.

Quantum well intermixing (QWI) is an effective method for simple and well-defined monolithic integration of photonic devices. We introduce an identical-active electro-absorption modulated laser (IA-EML) with optimized QWI, which is applied to reduce the absorptive waveguide region. To determine the optimal intermixed IA-EML structure, we conduct a comparative analysis between the cases of an IA-EML with only an intermixed waveguide region and with both intermixed waveguide and electro-absorption modulator (EAM) regions, as well as the case without QWI. The results reveal that the intermixed region effectively inhibits the absorption in the waveguide. In particular, the IA-EML with only waveguide intermixing exhibits superior modulation characteristics with low driving voltages and a high extinction ratio. Our work provides an attractive approach for suppressing the absorptive waveguide region in the IA-EML to enhance modulation performance and to develop photonic integrated circuits with a simplified process.