Photon Drag Effect Research Articles

Manipulation of Helicity-Dependent Photocurrent and Stokes Parameter Detection in Topological Insulator Bi2Te3 Nanowires.

Helicity-dependent photocurrent (HDPC) and its modulation in topological insulator Bi2Te3 nanowires have been investigated. It is revealed that when the incident plane of a laser is perpendicular to the nanowire, the HDPC is an odd function of the incident angle, which is mainly contributed by the circular photogalvanic effect originating from the surface states of Bi2Te3 nanowire. When the incident plane of a laser is parallel to the nanowire, the HDPC is approximately an even function of the incident angle, which is due to the circular photon drag effect coming from the surface states. It is found that the HDPC can be effectively tuned by the back gate and the ionic liquid top gate. By analyzing the substrate dependence of the HDPC, we find that the HDPC of the Bi2Te3 nanowire on the Si substrate is an order of magnitude larger than that on SiO2, which may be due to the spin injection from the Si substrate to the Bi2Te3 nanowire. In addition, by applying different biases, the Stokes parameters of a polarized light can be extracted by arithmetic operation of the photocurrents measured in the Bi2Te3 nanowire. This work suggests that topological insulator Bi2Te3 nanowires may provide a good platform for opto-spintronic devices, especially in chirality and polarimtry detection.

Emerging Nonlinear Photocurrents in Lead Halide Perovskites for Spintronics.

Lead halide perovskites (LHPs) containing organic parts are emerging optoelectronic materials with a wide range of applications thanks to their high optical absorption, carrier mobility, and easy preparation methods. They possess spin-dependent properties, such as strong spin-orbit coupling (SOC), and are promising for spintronics. The Rashba effect in LHPs can be manipulated by a magnetic field and a polarized light field. Considering the surfaces and interfaces of LHPs, light polarization-dependent optoelectronics of LHPs has attracted attention, especially in terms of spin-dependent photocurrents (SDPs). Currently, there are intense efforts being made in the identification and separation of SDPs and spin-to-charge interconversion in LHP. Here, we provide a comprehensive review of second-order nonlinear photocurrents in LHP in regard to spintronics. First, a detailed background on Rashba SOC and its related effects (including the inverse Rashba-Edelstein effect) is given. Subsequently, nonlinear photo-induced effects leading to SDPs are presented. Then, SDPs due to the photo-induced inverse spin Hall effect and the circular photogalvanic effect, together with photocurrent due to the photon drag effect, are compared. This is followed by the main focus of nonlinear photocurrents in LHPs containing organic parts, starting from fundamentals related to spin-dependent optoelectronics. Finally, we conclude with a brief summary and future prospects.

Investigation of helicity dependent photocurrent of the surface states in a (Bi0.7Sb0.3)2Te3 nanoplate

Abstract Helicity dependent photocurrent (HDPC) of the surface states in a high-quality topological insulator (Bi$_{0.7}$Sb$_{0.3}$)$_2$Te$_3$ nanoplate grown by chemical vapor deposition (CVD) is investigated. By investigating the angle dependent HDPC, it is found that the HDPC is mainly contributed by the circular photogalvanic effect (CPGE) current when the incident plane is perpendicular to the connection of the two contacts, whereas the circular photon drag effect (CPDE) dominates the HDPC when the incident plane is parallel to the connection of the two contacts. In addition, the CPGE of the (Bi$_{0.7}$Sb$_{0.3}$)$_2$Te$_3$ nanoplate is regulated by temperature, light power, excitation wavelength, the source-drain and ionic liquid top-gate voltages, and the regulation mechanisms are discussed. It is demonstrated that (Bi$_{0.7}$Sb$_{0.3}$)$_2$Te$_3$ nanoplates may provide a good platform for novel opto-spintronics devices.

Helicity-dependent photocurrent of topological surface states in the intrinsic magnetic topological insulator MnBi2Te4

Helicity-dependent photocurrent (HDPC) of the topological surface states (TSSs) in the intrinsic magnetic topological insulator MnBi2Te4 is investigated. It is revealed that the HDPC is mainly contributed by the circular photogalvanic effect (CPGE) current when the incident plane is perpendicular to the connection of the two electrodes, while the circular photon drag effect plays the dominant role when the incident plane is parallel to the connection of the two electrodes. The CPGE current shows an odd function dependence on incident angles, which is consistent with the C3v symmetry group of the TSSs in MnBi2Te4. The amplitude of the CPGE current increases with the decrease in temperature, which can be attributed to the increase in mobility at low temperatures, confirmed by the transport measurements. Furthermore, we modulate the CPGE of MnBi2Te4 by applying top gate and source–drain voltages. Compared to Bi2Te3 of the same thickness, the CPGE current of MnBi2Te4 can be more effectively tuned by the top gate because the Fermi level of MnBi2Te4 can be effectively regulated by the top gate, and it is tuned across the Dirac point. This work suggests that the intrinsic magnetic topological insulator MnBi2Te4 is a good candidate for designing opto-spintronics devices.

Giant Photon‐Drag‐Induced Ultrafast Photocurrent in Diamond for Nonlinear Photonics

AbstractDiamond is emerging as an attractive third‐generation wide‐bandgap semiconductor for future on‐chip nonlinear photonics and quantum optics due to its unique thermal, optical, and mechanical properties. However, the light‐driven current under below‐band gap excitation from the second‐order nonlinear optical effect in diamond is still challenging. Herein, a giant second‐order nonlinear photocurrent is observed in the chemical vapor deposition (CVD) diamond by utilizing terahertz (THz) emission spectroscopy. This ultrafast photocurrent originates from the photon drag effect (PDE), during which the momentum transfer from the incident photons to the charge carriers at the rich grain boundaries of the CVD diamond after the exclusive subgap π–π* transition upon femtosecond laser excitation. Especially, the interplay between circular and linear PDE to the THz generation is clarified and distinguished under elliptically polarized light excitation. Furthermore, the picosecond ultrafast dynamics of these charge carriers are also verified by infrared spectroscopy. Owing to the giant photon‐drag‐induced ultrafast photocurrent, the CVD diamond presents the highest THz emission efficiency compared with the reported carbon allotropes, which expands the new functionality of diamond nonlinear photonics into on‐chip THz devices.

Emergence of threefold symmetric helical photocurrents in epitaxial low twinned Bi2Se3

We present evidence of a strong circular photon drag effect (PDE) in topological insulators (TIs) through the observation of helicity-dependent topological photocurrents with threefold rotational symmetry using THz spectroscopy in epitaxially-grown Bi2Se3 with reduced crystallographic twinning. We establish how twinned domains introduce competing nonlinear optical (NLO) responses inherent to the crystal structure that obscure geometry-sensitive optical processes through the introduction of a spurious mirror symmetry. Minimizing the twinning defect reveals strong NLO response currents whose magnitude and direction depend on the alignment of the excitation to the crystal axes and follow the threefold rotational symmetry of the crystal. Notably, photocurrents arising from helical light reverse direction for left/right circular polarizations and maintain a strong azimuthal dependence-a result uniquely attributable to the circular PDE, where the photon momentum acts as an applied in-plane field stationary in the laboratory frame. Our results demonstrate new levels of control over the magnitude and direction of photocurrents in TIs and that the study of single-domain films is crucial to reveal hidden phenomena that couple topological order and crystal symmetries.

Ultrafast helicity-dependent photocurrents in Weyl Magnet Mn3Sn

Mn3Sn is a material that has attracted a lot of attention lately for its topologically non-trivial band structure, which leads to very promising spintronic properties. In this work we experimentally demonstrate that an epitaxially grown thin film of Mn3Sn acts as a source of THz radiation at room temperature when irradiated by a femtosecond laser pulse. By combining various experimental measurements as a function of pump polarisation, magnetic field, and sample orientation we are able to explain the origin of the THz emission with the photocurrents generated via the photon drag effect. A thorough symmetry analysis combined with electronic band structure calculations using density-functional theory (DFT) are used to support our conclusions and provide a guide towards the important features that lead to photocurrent generation, which is useful for designing ultra-fast current pulses emitters.

Gate voltage control of helicity-dependent photocurrent and polarization detection in (Bi1−xSbx)2Te3 topological insulator thin films

Optical helicity provides us with an effective means to control the helicity-dependent photocurrent in the spin-momentum-locked surface states of topological insulators (TIs). Also, the TIs show potential in polarization detection as an intrinsic solid-state optical chirality detector for easier integration and fabrication. However, the complex photoresponses with the circular photogalvanic effect, the linear photogalvanic effect, and the photon drag effect in the TIs prevent them from direct chirality detection of the elliptically polarized light. Here, by fitting with the theoretical models to the measured photocurrents, the microscopic origin of different components of the helicity-dependent photocurrent has been demonstrated. We show a comprehensive study of the helicity-dependent photocurrent in (Bi1−xSb x )2Te3 thin films of different thicknesses as a function of the light incident angle and the gate-tuned chemical potential. The observation of the light incident angle dependence of the helicity-dependent photocurrent provides us with a polarization detection strategy using a TI thin film without the use of any additional optical elements, and the detection accuracy can be enhanced by gate tuning. Additionally, the Stokes parameters can be extracted by arithmetic operation of photocurrents measured with different incident angles and gating voltages for complete characterization of the polarization states of a light beam. Using this means, we realize the polarization detection and the Stokes parameters analysis with a single device. Our work provides an alternative solution to develop miniaturized intrinsic polarization-sensitive photodetectors.

Electric Control of Helicity-Dependent Photocurrent and Surface Polarity Detection on Two-Dimensional Bi2O2Se Nanosheets.

Bismuth oxyselenide (Bi2O2Se) is a two-dimensional (2D) layered semiconductor material with high electron Hall mobility and excellent environmental stability as well as strong spin-orbit interaction (SOI), which has attracted intense attention for application in spintronic and spin optoelectronic devices. However, a comprehensive study of spin photocurrent and its microscopic origin in Bi2O2Se is still missing. Here, the helicity-dependent photocurrent (HDPC) was investigated in Bi2O2Se nanosheets. By analyzing the dependence of HDPC on the angle of incidence, we find that the HDPC originates from surface states with Cs symmetry in Bi2O2Se, which can be attributed to the circular photogalvanic effect (CPGE) and circular photon drag effect (CPDE). It is revealed that the HDPC current almost changes linearly with the source-drain voltage. Furthermore, we demonstrate effective tuning of HDPC in Bi2O2Se by ionic liquid gating, indicating that the spin splitting of the surface electronic structure is effectively tuned. By analyzing the gate voltage dependence of HDPC, we can unambiguously identify the surface polarity and the surface electronic structure of Bi2O2Se. The large HDPC in Bi2O2Se nanosheets and its efficient electrical tuning demonstrate that 2D Bi2O2Se nanosheets may provide a good platform for opto-spintronics devices.

THz Generation from the Topological Nodal Line Semimetal Co2MnGa

Nonlinear optical spectroscopy is a fundamental probe for the investigation of topological effects in quantum materials. In this paper, we report on the terahertz (THz) emission from thin films at various thicknesses of the magnetic topological nodal semimetal Co2MnGa (CMG) when excited by femtosecond optical pulses. Experimental results suggest the presence of multiple THz generation mechanisms, originating from both bulk and surface states of CMG. The former is explained in terms of a photon-drag effect as induced by radiation pressure. The latter emission mechanism instead appears to be related to the photovoltaic effect coming from the topological surface states. This interplay between generation mechanisms indicates that Co2MnGa topological nodal semimetals are a valuable platform for THz emitter devices.

Coherent THz wave emission from HgTe quantum dots

Mercury telluride (HgTe) nanocrystals (NCs) are very promising for THz technology as they exhibit broad THz absorption resonances and a carrier lifetime of a few picoseconds as well as being easily fabricated using solution synthesis. In this work, we show their light emission properties in the THz spectral range, up until now unexplored, and show how THz pulse generation can be used for microscopic insights into these NCs. In particular, we report on coherent THz emission from large HgTe NCs excited by linearly polarized optical pulses via second-order nonlinear effects. The peak emission frequency is tunable from 0.4 to 0.8 THz by varying incident angles of optical pulses from 0° to 45°. Our results reveal that the THz emission is induced by transient photocurrents arising from both photogalvanic and photon drag effects. By pushing the light emission of colloidal quantum dots down to the THz spectral range, our study expands the application fields of NCs, especially toward the development of easily integrable and tunable THz emitters and quantum THz devices.

Generation and Control of Ultrafast Circular Photon Drag Current in Multilayer PtSe2 Revealed Via Terahertz Emission

AbstractThe generation and control of ultrafast photocurrents on the surface of transition‐metal dichalcogenides (TMDs) are essential for the development of advanced optoelectronic devices. A detailed understanding of the mechanism of ultrafast photocurrent generation is primarily needed to design functional devices. Here, it is reported that ultrafast photocurrents in multilayer PtSe2 are induced by the photon drag effect with high conversion efficiency. Particularly, under circularly polarized laser excitation, anisotropic in‐plane photon drag currents are generated, leading to the elliptically polarized terahertz (THz) radiation directly controlled by the helicity of the pump beam. Furthermore, a new model called “THz emission by the circular ac Hall effect” (TECacHE) is proposed to unveil the carrier transport process. It is observed that the origins of elliptically polarized THz emission controlled by helicity involve the pure circular photon drag current and the retardation induced by the Lorentz force. Besides, ultrafast ternary encoding is proposed and demonstrated by polarized THz emission. The results not only provide a new contactless detection model to study surface ultrafast photocurrents but also afford a fundamental investigation of the circular photon drag current in layered TMDs for THz telecommunication devices.

The Surface Photogalvanic and Photon Drag Effects in Ag/Pd Metal-Semiconductor Nanocomposite.

We performed the investigation of the polarization-sensitive photocurrent generated in silver-palladium metal-semiconductor nanocomposite films under irradiation with nanosecond laser pulses at the wavelength of 2600 nm. It is shown that in both the transverse and the longitudinal configuration, the surface photogalvanic (SPGE) and photon drag effects (PDE) contribute to the observed photocurrent. However, the temporal profile of the transverse photocurrent pulse is monopolar at any polarization and angle of incidence, while the temporal profile of the longitudinal photocurrent pulse depends on the polarization of the excitation beam. Specifically, the irradiation of the film with the s-polarized excitation beam produces a monopolar photoresponse, while at p-polarized excitation, the photoresponse is bipolar, having a short front and long tail. Obtained experimental results are in agreement with the developed phenomenological theory, which describes transverse and longitudinal photocurrents due to SPGE and PDE in terms of relevant second-order nonlinear susceptibilities and allows us to obtain their dependences on the angle of incidence and polarization of the excitation laser beam. The pronounced dependence of the photocurrent on the angle of incidence and polarization of the excitation beam opens avenues toward the development of polarization- and position-sensitive detectors for industrial and space applications.

Geometric Photon-Drag Effect and Nonlinear Shift Current in Centrosymmetric Crystals.

The nonlinear shift current, also known as the bulk photovoltaic current generated by linearly polarized light, has long been known to be absent in crystals with inversion symmetry. Here we argue that a nonzero shift current in centrosymmetric crystals can be activated by a photon-drag effect. Photon-drag shift current proceeds from a "shift current dipole" (a geometric quantity characterizing interband transitions) and manifests a purely transverse response in centrosymmetric crystals. This transverse nature proceeds directly from the shift-vector's pseudovector nature under mirror operation and underscores its intrinsic geometric origin. Photon-drag shift current can be greatly enhanced by coupling to polaritons and provides a new and sensitive tool to interrogate the subtle interband coherences of materials with inversion symmetry previously thought to be inaccessible via photocurrent probes.

New features in the surface plasmon induced photon drag effect in noble metal thin films

We study light–matter interactions leading to the generation of photon drag voltage under surface plasmon resonance conditions in noble metal thin films and observe important effects, which provide opportunity for condensed matter theorists to critically evaluate theoretical models. The drag voltage originates from a force that arises because of the transfer of momentum from incident light to electrons. This transfer of photon momentum leads to an electric current, which in turn results in the generation of drag voltage. The effect is particularly enhanced under surface plasmon resonance conditions and thereby reinforces the interaction between light and collective oscillations of the surface charges. We observe relatively high voltages with a nonlinear dependence on laser intensity. In disagreement with previous results, we do not observe a reversal in the sign of the voltage when the direction of the incident laser momentum is reversed. Qualitative analyses of the data show that the hydrodynamic model of laser-induced drag voltage does not work: the hydrodynamic model predicts voltages that are nine orders of magnitude lower than our measurements. However, there is reasonable consistency between the results of the measurements and numerical simulations.

Intensity-tunable terahertz radiation from tin selenide

Recently, the active controlled broadband terahertz (THz) emitter from semiconductor crystal has attracted considerable attention due to its field intensity tuning properties, which makes it a promising candidate for wide applications in THz photonics. A broadband THz wave radiation intensity by applying electric field control in an n-type semiconductor tin selenide (SnSe2) crystal had been reported. In addition, due to the weak phonon absorption of the material in the THz band, the resulting THz spectral range is up to 3.5 THz. With an applied voltage of −5 V, the actively modulated depth of THz intensity is up to 123%. Our work directly demonstrates that when the excited laser photon energy exceeds the material bandgap, photon drag effect would be the main mechanism of THz wave radiation rather than nonlinear effects. Owing to simple structure and high modulation depth, electrically controlled THz radiation, the SnSe2 crystal has great applications in generation and modulation devices in THz region.

The role of device asymmetries and Schottky barriers on the helicity-dependent photoresponse of 2D phototransistors

Circular photocurrents (CPC), namely circular photogalvanic (CPGE) and photon drag effects, have recently been reported both in monolayer and multilayer transition metal dichalcogenide (TMD) phototransistors. However, the underlying physics for the emergence of these effects are not yet fully understood. In particular, the emergence of CPGE is not compatible with the D3h crystal symmetry of two-dimensional TMDs, and should only be possible if the symmetry of the electronic states is reduced by influences such as an external electric field or mechanical strain. Schottky contacts, nearly ubiquitous in TMD-based transistors, can provide the high electric fields causing a symmetry breaking in the devices. Here, we investigate the effect of these Schottky contacts on the CPC by characterizing the helicity-dependent photoresponse of monolayer MoSe2 devices both with direct metal-MoSe2 Schottky contacts and with h-BN tunnel barriers at the contacts. We find that, when Schottky barriers are present in the device, additional contributions to CPC become allowed, resulting in emergence of CPC for illumination at normal incidence.

Wave-vector direction-sensitive photocurrent in laser-induced graphene

Porous graphene film structures were formed in the process of line-by-line scanning by a focused laser beam of cw CO2 laser on polyimide film. It was shown that at a power density of 8 W/cm2 and a scanning speed range of 200-260 mm/s, porous graphene is formed on the surface of a 120-μm-thick polyimide film. The results of the investigation of the longitudinal photocurrent generation in LIG film are presented. Photocurrent excitation was carried out by nanosecond laser pulses at wavelength range of 266-1064 nm. It was found that the photocurrent depends on the direction of the wave-vector of the incident radiation according to the odd law characteristic of the photon drag effect (PDE). It is also shown that the presented method of the LIG film formation leads to anisotropy of its photovoltaic properties.

Laser-Induced Graphene on a Polyimide Film: Observation of the Photon Drag Effect

Film structures of porous graphene have been produced by irradiating a polyimide film with focused radiation of a continuous CO2 laser. The generation of nanosecond photocurrent pulses induced by nanosecond laser pulses in a wide wavelength range has been observed in the obtained structures. It has been demonstrated that the photocurrent increases linearly with pulsed laser power and is an odd function of the angle of incidence of radiation on the film structure. The wavelength dependence of the coefficient of conversion of laser power into photocurrent has been measured. The obtained data have been interpreted as a result of current generation due to photon drag effect.

Лазерно-индуцированный графен на полиимидной пленке: наблюдение эффекта увлечения

Porous graphene film structures were produced by irradiation of polyimide film with focused continuous wave CO2 laser. Generation of nanosecond pulses of photocurrent was observed in the obtained structures upon excitation by nanosecond laser pulses in a wide range of wavelengths. It is shown that the photocurrent linearly increases with pulsed laser power and its dependence on the angle of light incidence on the film structure is symmetric about the origin. Wavelength dependence of light-to-photocurrent conversion coefficient was measured. The obtained results are explained by photon-drag effect photocurrent generation.