Photoluminescence Spectra Research Articles

Regulating Second‐Harmonic Generation in 2D Chiral Perovskites Through Achiral Organic Spacer Cation Alloying Strategy

AbstractThe inherent structural flexibility and chiroptical activity of 2D chiral perovskites make them promising for the nonlinear optical (NLO) application. A comprehensive understanding of the second‐harmonic generation (SHG) mechanism in 2D chiral perovskites is essential for developing NLO devices. However, the rational design of 2D chiral perovskite structures to regulate SHG properties remains challenging. Herein, to regulate SHG response, an achiral organic spacer cation alloying strategy is employed to construct a series of 2D chiral perovskites. Through the measurement of temperature‐dependent photoluminescence (PL) spectra, it is revealed that the material design strategy can effectively modulating self‐trapped exciton (STE) emission. More importantly, it is confirmed that there is a competitive relationship between STE emission and SHG in 2D chiral perovskites. Meanwhile, the microscopic imaging of circularly polarized‐SHG is demonstrated in chiral perovskites. This work will not only advance the understanding of the SHG mechanism in 2D chiral perovskites but also provide inspiration for the rational design and synthesis of perovskites for NLO devices.

Impact of molecular configuration on the photoluminescence and electrical characteristics of poly-pyrrol-thiazol-imine polymers films.

The optical, photoluminescence, and electrical properties of Poly(Z)-PTI and Poly(E)-PTI, two Poly-Pyrrol-Thiazol-Imine polymers with comparable chemical structures but distinct configurations, were examined. Using the dip-casting method, polymer films were deposited on ITO substrates. UV-VIS spectroscopy revealed that both polymers diverged between 500 and 800nm, showing the impact of molecular arrangement, but showed similar absorption behavior for wavelengths shorter than 500nm. For Poly(Z)-PTI, the direct optical energy gaps were 2.06eV, while for Poly(E)-PTI, they were 1.78eV. Poly(Z)-PTI displayed an emission peak at 610nm (red) according to laser photoluminescence spectra, while Poly(E)-PTI peaked at 563nm (green-yellow). The capacitance behavior was revealed by electrochemical impedance spectroscopy. Nyquist plots suggested an equivalent circuit model of Rs (CRct)(QR)(CR) for both polymers, and the relaxation times were 15.9 ns for Poly(Z)-PTI and 89.5 ns for Poly(E)-PTI. The Mott-Schottky analysis verified the n-type conductivity, revealing 2.18 × 1016 cm- 3 carrier densities for Poly(Z)-PTI and 1.78 × 1016 cm- 3 for Poly(E)-PTI. At lower frequencies, both polymers exhibited limited conductivity and large dielectric constants. Insights into the possible uses of Poly-Pyrrol-Thiazol-Imine polymers in electrical and optoelectronic devices are provided by this study, which emphasizes the influence of molecular configuration on these polymers' characteristics.

Thermal Quenching of Intrinsic Photoluminescence in Amorphous and Monoclinic HfO2 Nanotubes

Nanotubular hafnia arrays hold significant promise for advanced opto- and nanoelectronic applications. However, the known studies concern mostly the luminescent properties of doped HfO2-based nanostructures, while the optical properties of nominally pure hafnia with optically active centers of intrinsic origin are far from being sufficiently investigated. In this work, for the first time we have conducted research on the wide-range temperature effects in the photoluminescence processes of anion-defective hafnia nanotubes with an amorphous and monoclinic structure, synthesized by the electrochemical oxidation method. It is shown that the spectral parameters, such as the position of the maximum and half-width of the band, remain almost unchanged in the range of 7–296 K. The experimental data obtained for the photoluminescence temperature quenching are quantitatively analyzed under the assumption made for two independent channels of non-radiative relaxation of excitations with calculating the appropriate energies of activation barriers—9 and 39 meV for amorphous hafnia nanotubes, 15 and 141 meV for monoclinic ones. The similar temperature behavior of photoluminescence spectra indicates close values of short-range order parameters in the local atomic surrounding of the active emission centers in hafnium dioxide with amorphous and monoclinic structure. Anion vacancies VO− and VO2− appeared in the positions of three-coordinated oxygen and could be the main contributors to the spectral features of emission response and observed thermally stimulated processes. The recognized and clarified mechanisms occurring during thermal quenching of photoluminescence could be useful for the development of light-emitting devices and thermo-optical sensors with functional media based on oxygen-deficient hafnia nanotubes.

Visible light sensitive BiVO4–TiO2 nanocomposites for photocatalytic dye degradation

Abstract The hydrothermal approach was used to prepare visible light active BiVO4–TiO2 nanosheet composites in varying molar ratios. The photoluminescence (PL) spectrum, X-ray photoelectron spectroscopy (XPS), UV-Visible Diffuse Reflectance Spectroscopy (DRS), Transmission electroscopy (TEM), Brunauer-Emmett-Teller (BET) and field emission scanning electron microscopy (FESEM), were used to analyze the photocatalysts and composites. Photocatalytic activity of BiVO4–TiO2 composites was investigated by decolorizing methylene blue. Out of four different molar ratio BiVO4–TiO2 composites with a molar ratio of 3:1 BiVO4 TiO2 composite showed enhanced photocatalytic activity which is further proved by photoluminescence investigation of coumarin and Scavenger test. The DRS of BiVO4 TiO2 composite showed red shift in optical absorption. The enhanced photocatalytic activity is due to minimizing electron hole recombination by making composite with TiO2.

Does the substrate and a buffer layer have a greater influence on poly(3-Hexylthiophene) films deposited by the chronocoulometry technique?

Abstract In this study, we investigate the interface morphology and optical properties of electrochemical poly(3-hexylthiophene) (P3HT) films deposited by electrochemical synthesis using the chronocoulometry technique on tin-doped indium oxide (ITO) and fluorine-doped tin oxide (FTO) and how the substrate used influences in the deposition of the films and their optical and morphological properties, as well as the buffer layer and the interface effect, with and without spin-coating films of poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS). P3HT polymeric films were synthesized and deposited via the oxidation of the 3-hexylthiophene (3-HT) monomer and characterized via Raman spectroscopy. The morphology and thickness of the P3HT layer present in the samples ITO/P3HT, FTO/P3HT, ITO/PEDOT:PSS/P3HT, and FTO/PEDOT:PSS/P3HT were carried out using atomic force microscopy (AFM). The optical and electronic gap energy of P3HT were calculated from UV‒Vis spectra and cyclic voltammetry curves, respectively. The photoluminescence (PL) spectra showed broad and asymmetrical line shapes fitted by multi-Gaussian functions identifying different emission species. Emission ellipsometry spectroscopy was performed to study the energy transference between adjacent polymer chains. Our results show a higher linear polarized light emitted by ITO/PEDOT:PSS/P3HT film, ∼37%, thus demonstrating a significant decrease in the energy transfer. Based on these results, the efficiency of organic solar cells can be improved via the interaction of the polymer/polymer interface.

Effect of the Pyrolysis Environment in a Complex Compound in the Synthesis of In0.6Ga0.4N Powders and their Characterization

In this work, the comparison between nitrogen and air synthesis environments in obtaining In0.6Ga0.4N powders is presented, and the effect of how the air environment can reduce the pyrolysis temperature of In0.6Ga0.4N powders to 271 °C using the thermal gravimetric analysis, and derivative thermogravimetry methods. X‐ray diffraction patterns demonstrate the presence of a cubic phase in nanocrystallites, in addition to less presence of the hexagonal phase. In contrast, scanning electron microscopy micrographs show a surface morphology of irregular agglomerates with a porous appearance and the presence of nonuniform plates. Energy‐dispersive spectroscopy and X‐ray photoelectron spectroscopy spectra demonstrate the presence of elemental contributions of gallium, indium, and nitrogen. At the same time, transmission electron microscopy shows the cubic structure and an interplanar distance of 2.7 Å for the (200) plane. Raman scattering shows the presence of E2(high) vibration mode for the hexagonal phase with a value of 560 cm−1. Finally, the photoluminescence spectrum shows an energy emission at 1.39 eV (886 nm), which is associated with the emission of the In0.6Ga0.4N powders.

Various CVD-grown ZnO nanostructures for nanodevices and interdisciplinary applications

This work presents a simple chemical vapour deposition (CVD) method to grow ZnO nanostructures. By annealing Zn powder under atmospheric pressure conditions, we collected nanocrystals with various morphologies, including rods, pencils, sheets, combs, tetrapods, and multilegs. Raman scattering study reveals that the samples are monophasic with a hexagonal structure, and fall into the P63mc space group. Depending on the morphology and crystal quality, their photoluminescence spectra have only a strong UV emission associated with the exciton radiative recombination, or both UV and defect-related visible emissions with their relative intensity ratio varying with the excitation power density. The obtained results prove that ZnO exhibits many novel nanostructures that can foster the development of next-generation optoelectronic nanodevices and new applications in biological and biomedical fields.

Characterization of PbMo0.3W0.7O4 Crystal: A Potential Material for Photocatalysis and Optoelectronic Applications

AbstractPbMo0.3W0.7O4 semiconductor crystal, which contains the balanced ratios of Mo and W, is grown for the first time by Czochralski method. The structural and optical properties of the crystal are investigated in detail in the present study. Structural analysis shows that crystal has tetragonal structure like PbMoO4 and PbWO4 compounds. The optical characteristics are studied by transmission, Raman, FTIR and photoluminescence methods. The bandgap energy is found to be 3.18 eV, and the positions of the conduction and valence bands are determined. The vibrational characteristics are studied by means of Raman and FTIR spectroscopy techniques. Photoluminescence spectrum presents three peaks around 486, 529, and 544 nm which fall into the green emission spectral range. Taking into account the properties of the compound, it is stated that PbMo0.3W0.7O4 (or Pb(MoO4)0.3(WO4)0.7) has the potential to be used in water splitting applications and optoelectronic devices that emit green light.

Impact of Temperature and Substrate Type on the Optical and Structural Properties of AlN Epilayers: A Cross-Sectional Analysis Using Advanced Characterization Techniques

AlN, with its ultra-wide bandgap, is highly attractive for modern applications in deep ultraviolet light-emitting diodes and electronic devices. In this study, the surface and cross-sectional properties of AlN films grown on flat and nano-patterned sapphire substrates are characterized by a variety of techniques, including photoluminescence spectroscopy, high-resolution X-ray diffraction, X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, and Raman spectroscopy. The results indicate that different sapphire substrates have minimal impact on the photoluminescence spectrum of the epitaxial films. As the temperature increased, the radius of curvature of the AlN films increased, while the warpage decreased. The AlN films grown on nano-patterned substrates exhibited superior quality with less surface oxidation. During the growth of AlN thin films on different types of substrates, slight shifts in the energy bands occurred due to differences in the introduction of carbon-related impurities and intrinsic defects. The Raman shift and full width at half maximum (FWHM) of the E2(low), A1(TO), E2(high), E1(TO), and E1(LO) phonon modes for the cross-sectional AlN films varied with the depth and temperature. The stress state within the film was precisely determined with specific depths and temperatures. The FWHM of the E2(high) phonon mode suggests that the films grown on nano-patterned substrates exhibited better crystalline quality.

Liquid-Phase Fabrication of Janus 2D Materials: Defect-Rich MoS2 Ultrathin Layers Asymmetrically Decorated with Au Nanoparticles.

Asymmetrically decorated nanoparticles (NPs), also known as "Janus nanoparticles", possess at least two differently functionalized surfaces. This coexistence results in novel features that surpass the inherited benefits of the initial counterparts. Despite significant advances in spherical morphologies, research on Janus two-dimensional (2D) materials is limited, as fabrication strategies primarily focus on dry deposition techniques. To produce Janus 2D materials in large quantities, solution-based techniques are proposed. However, this approach remains largely unexplored for 2D materials other than graphene and its derivatives, and it yields Janus 2D materials in very low amounts. This study develops a liquid-phase fabrication strategy for the asymmetric decoration of MoS2 ultrathin layers with gold nanoparticles. This approach builds on previous advances in the asymmetric functionalization of spherical nanoparticles, using SiO2 microbeads as a masking template. Interestingly, the photoluminescence (PL) spectrum of the processed material is unusually dominated by the B exciton emission. The reported versatile method has proven to be scalable, enabling the production of 2D Janus flakes in appreciable quantities, whether as 1T or 2H-polytypes. Overall, the novel synthetic strategy is highly adaptable and can be extended to a variety of other 2D materials and functionalizing agents.

Ultrafast reconfigurable direct charge trapping devices based on few-layer MoS2

Abstract Charge trapping devices incorporating 2D materials and high-κ dielectrics have emerged as promising candidates for compact, multifunctional memory devices compatible with silicon-based manufacturing processes. However, traditional charge trapping devices encounter bottlenecks including complex device structure and low operation speed. Here, we demonstrate an ultrafast reconfigurable direct charge trapping device utilizing only a 30 nm-thick Al2O3 trapping layer with a MoS2 channel, where charge traps reside within the Al2O3 bulk confirmed by transfer curves with different gate-voltage sweeping rates and photoluminescence (PL) spectra. The direct charging tapping device shows exceptional memory performance in both three-terminal and two-terminal operation modes characterized by ultrafast three-terminal operation speed (≈300 ns), an extremely low OFF current of 10-14 A, a high ON/OFF current ratio of up to 107, and stable retention and endurance properties. Furthermore, the device with a simple symmetrical structure exhibits VD polarity-dependent reverse rectification behavior in the high resistance state (HRS), with a rectification ratio of 105. Additionally, utilizing the synergistic modulation of the conductance of the MoS2 channel by VD and VG, it achieves gate-tunable reverse rectifier and ternary logic capabilities.

Effect of oxygen vacancies on enhancing the photo-catalytic activity, photo-luminescence and electronic structure properties of nanostructured Y-doped CeO2

The exceptional characteristics of CeO2 and Ce1-xYxO2 (x = 0.03, 0.05 and 0.07) nanoparticles were reported in the manuscript supporting that Y3+replaces Ce3+/Ce4+leads to oxygen vacancies formation. The results of XRD measurements revealed FCC structure of decreased crystallite size of CeO2 with improved crystallinity. To investigate the surface morphology, HRTEM and SAED patterns were performed. EDX analyses were undertaken to discuss the elemental and compositional characteristics. The absorption spectra using UV–Vis–NIR spectroscopy were analyzed and red shifted absorbance was found to enhance with decreasing band gap values for increased Y doping. The Photoluminescence spectra depicted various emissions representing the development of various defects and oxygen vacancy with incorporation of Y content in the lattice with CCT values below 4000 K to be classified as warm yellow light for indoor applications. The development of oxygen vacancies in the CeO2 lattice was further supported by XPS measurements for core levels Ce 3d, O 1s and Y 3d. Furthermore, the XPS measurements also reported the valence states of elements, Ce with 3+ and 4+, Y with 3+ and O with 2- along with charged oxygen vacancies. The photo-catalytic analysis revealed that Y-doped CeO2 nanoparticles show better degradation using a variety of characterization. A degradation mechanism that illustrates the impact of oxygen vacancies created by Y-doping on the photo-degradation process has been proposed. The novelty of Y-doped CeO2 nanoparticles stems from their improved photo-catalytic activities, which are linked to structural changes and the formation of oxygen vacancies. This doping considerably affects the electrical structure, resulting in better light absorption and less electron-hole recombination. The detailed outcomes of present study suggested the use of Y-doped CeO2 nanoparticles in optoelectronics, spintronics devices and photo-catalyst applications.

On-Off Switching of Singlet Self-Trapped Exciton Emission Endows Antimony-Doped Indium Halides with Excitation-Wavelength-Dependent Luminescence.

Excitation-wavelength-dependent (Ex-De) emitters are a fascinating category of luminescent materials whose emission properties vary with the wavelength of the light used for excitation. Antimony (Sb3+)-doped indium (In)-based metal halides are efficient light emitters; however, the peak fluorescence emission of most Sb3+-activated In-halide remains independent of the excitation wavelength. Here, the study introduces a new Sb3+-doped In-halide cluster, (BDPA)2InCl5:Sb (BDPA+ = C15H18N+, benzyldimethylphenylammonium), which demonstrates efficient Ex-De emission originating from the on-off switchable fluorescence behavior of singlet self-trapped exciton (STE) in 5-coordinate Sb3+ dopant. Interestingly, when excited within the range of 240-370nm, photoluminescence (PL) spectra of (BDPA)2InCl5:Sb show both singlet and triplet STE emission. However, under excitation wavelengths of 370 to 420nm, the singlet STE emission is absent, resulting in a noticeable correlated color temperature change from 1700 to 3800 K. The study provides a new approach to designing color-tunable Sb3+-based luminophores, and also presents a novel application scenario for the widely recognized Sb3+ doping strategy.

Optical and EPR study of Mn4+ ions in different crystal environments in Mn, Li co-doped MgO

The influence of Li ion on the symmetry of Mn4+ center and its photoluminescence (PL) in MgO:0,01%Mn, 3% Li ceramics is studied by the X-ray diffraction, electron paramagnetic resonance (EPR), PL and optical absorption methods. It is shown that Li co-doping stimulates conversion of Mn2+ on Mg site into Mn4+ and can decrease symmetry of Mn4+ in a case of their specific close arrangement in the crystal lattice. Two kinds of Mn4+ centers are identified in the EPR and PL spectra: cubic Mn4+ and tetragonal complex Mn4+-Li+. The parameters of corresponding EPR centers are estimated from the experimental spectra (gcub=1.994, |A|cub=70.9x104 cm-1; g1tetr=g2tetr=1.994, g3tetr=1.993, |A|tetr=71x104 cm-1, |D|tetr=220x104 cm-1). The PL lines observed in the low temperature PL spectra are assigned to the specific Mn4+ related centers by using a complementary study of PL excitation spectra and temperature dependent PL spectra. The lines at 654 nm and 671 nm are ascribed to R-line of Mn4+ in a site of cubic symmetry and its phonon overtone, correspondingly, as well as the lines at 666 nm and 681 nm are attributed to R2 line of Mn4+ in site with tetragonal symmetry and to its phonon overtone, correspondingly. It is shown that in Mn doped MgO ceramics made without intentional Li co-doping, the cubic Mn4+ center can be present and contribute to the PL spectra.

Naphthalene-Arylamine Starburst Architectures: Novel Hole Transport Materials for Enhanced OLED Performance

The excellent hole transfer material (HTM) is beneficial to improve the stability of the device, reduce turn-on voltage(Von) and make full use of the potential performance of the developed emissive materials. In this work, we designed and synthesized four HTMs with triarylamine and naphthalene compounds - SHT1- SHT4. The characteristics of these four compounds were investigated by TGA, DSC. UV–vis absorption and photoluminescence spectra. These four HTMs all exhibit excellent hole transmission capability for their high triplet energy levels (ET), outstanding thermal property, morphological stabilities and appropriate highest occupied molecular orbital (HOMO) energy levels with emissive layer (EML). Four top-emission blue OLEDs with SHT1 - SHT4 as hole transport layer (HTL) were fabricated and show good electroluminescence (EL) property. The results show that the device incorporating SHT3 exhibit the best device performances with a low Von of 2.79 V, external quantum efficiency (EQEmax) of 19.7 %, highest current efficiency (CEmax) and highest Power efficiency (PEmax) of 8.86 cd A-1 and 9.05 lm W-1, respectively.

Synthesis and characterization of erbium silica glass and glass-ceramics for potential low-emissivity coating applications

Silica glasses co-doped with varying concentrations of Er3+ (0.8, 1.5, 4, and 8 mol %) were fabricated employing the sol-gel technique. The effects of erbium concentration were evaluated through several characterization techniques, including X-ray diffraction (XRD), differential scanning calorimetry (DSC), scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FTIR), UV-visible transmission spectroscopy, and photoluminescence analysis. The incorporation of erbium ions significantly altered the structural, optical, and photoluminescence properties of the doped glasses. XRD analysis revealed the presence of SiO2 in both tetragonal and hexagonal forms, along with Er2SiO5 crystalline phases. SEM images showed irregular rod-shaped structures with agglomeration and micro-flake cubic shapes. FTIR spectroscopy provided insights into the structural characteristics of the materials. Notably, the optical band gap energy of the glassy films increased, accompanied by fluctuating Urbach energy and a slight reduction in the refractive index, attributed to structural changes within the glass network. Photoluminescence spectra indicated strong emissions at 523 and 543 nm, corresponding to the transitions 2H11/2 → 4I15/2 and 4S3/2 → 4I15/2, respectively. Additionally, a notable near-infrared emission at 1532 nm was observed, linked to the transition 4I13/2 → 4I15/2. The color coordinates of the produced glasses were found to be near the green or yellow regions, suggesting potential applications in optical amplifiers, lasers, and low-emissivity coatings.

Tunable emission and energy transfer of Tb3+/Eu3+ co-doped single-phase Sr2MgSi2O7 glass-ceramics

In this work, the Tb3+/Eu3+ co-doped 30SrO-10MgO-50SiO2-5TiO2-5B2O3-1Tb2O3-xEu2O3 (x = 0-2.5 mol% at 0.5 intervals) glasses were prepared by the melt-quenching method, and the single-phase Sr2MgSi2O7 glass-ceramics were obtained after heat treatment. The structural and fluorescence performance of the glasses and glass-ceramics were examined using DSC, XRD, SEM, FTIR, and photoluminescence spectra, and the energy transfer process between Tb3+ and Eu3+ was systematically investigated. With increasing Eu2O3 contents, the thermal stability of the glasses is enhanced and the density of both the glasses and the glass-ceramics rises. The XRD and SEM results reveal the precipitation of the irregular spherical Sr2MgSi2O7 microcrystals with a grain size roughly within 0.5-1 μm. Under 376 nm excitation, the overall emission intensity and lifetime of Eu3+ ions increase with increasing Eu2O3 contents, and the energy transfer efficiency reaches 58.74% from 31.07%. According to the Dexter model, the energy transfer process between the Tb3+ and Eu3+ is dominated by the quadrupole-quadrupole interactions. By varying the Eu2O3 contents, all the glass-ceramics exhibit higher color purity (82.06-96.27%), and their chromaticity coordinates shift from yellowish green towards reddish orange, which is potentially promising for w-LEDs.

Growth and spectroscopy characteristics of Er, Ce:BGSO crystal: A promising material for eye-safe laser applications

Er, Ce co-doped BGSO single crystals were successfully grown by the Bridgman method. The growth parameters, including temperature gradient and growth rate, were optimized to achieve high-quality crystals. The crystal structure and morphology were characterized using X-ray diffraction and scanning electron microscopy. The optical absorption properties of Er, Ce co-doped BGSO single crystals were studied using UV–Vis absorption spectroscopy. The absorption spectrum revealed the absorption edge and the presence of absorption bands related to the presence of Ce dopant, providing valuable insights into the energy transfer processes occurring within the crystal lattice. Furthermore, the luminescence mechanism of BGSO crystals was analyzed using the Judd-Ofelt (J-O) theory, with detailed investigation into the role of ligands in spectral parameters. The photoluminescence spectra and emission decay time of Er, Ce co-doped BGSO single crystals were characterized. A comparative analysis with Er, Ce:BGSO crystals was conducted to investigate the sensitization mechanism of Ce ions on Er emission at 1.5 μm, demonstrating their potential for use as eye-safe laser materials in various applications.

Structural and optical properties of Eu-doped ZnO epitaxial thin films grown by pulsed-laser deposition

Pulsed-laser deposition was utilized to fabricate Eu-doped ZnO epitaxial films on c-plane sapphire substrates with Eu concentrations ranging from 0.5 to 4.0 at. %. The structural properties were analyzed using x-ray diffraction surface normal radial scans and azimuthal cone scans, which confirmed the epitaxy of the film samples. Reciprocal space mapping was performed on ZnO(101̄1) to visualize the effect of Eu incorporation. X-ray fluorescence mapping confirmed the homogeneous distribution of Zn and Eu, and x-ray absorption near-edge structure spectra directly confirmed the trivalent state of Eu ions. The optical properties were assessed using temperature-dependent photoluminescence (PL). Various defects were identified. With increasing Eu dopant concentration, PL emissions from defects and the Eu 4f-intraband transitions gradually became the predominant features in the PL spectra at low temperatures. Furthermore, PL analysis suggested that Eu ions substituted Zn, occupying sites with lower C3v symmetry due to the distortion caused by Eu incorporation.

Molecular engineering of oxadiazole-based small organic-functional molecules as hole transporting materials for dopant-free perovskite solar cells

The present investigation concerns the synthesis and characterization of new hole-transporting materials (HTMs) for dopant free perovskite solar cells (PSCs). In this work, emphasis is placed on three new HTMs, specifically materials P-H, P-OMe, and P-CN, whose center-core is 2,2'-(4,8-bis(octyloxy)benzo[1,2-b:4,5-b']dithiophene (OBDT) and combined with two donor units of substituted triphenylamine as at both ends along with oxadiazole acceptor units in between donor and OBDT. The fabrication of perovskite solar cell devices using new HTMs and compared the power conversion performance with the standard spiro-OMeTAD HTM. Several spectroscopic techniques were utilized to characterize the properties of the new HTMs, such as FESEM analysis of thin-film morphologies, time-dependent photoluminescence (PL) spectra, and mobility measurements. The HTMs P-OMe established a compressed and steady protective layer on the perovskite layer. This layer contributed to the development of open-circuit voltage (VOC) and short-circuit current density (JSC), both of which are crucial for accomplishing high power conversion efficiency (PCE) in PSCs. The PSC device integrating the P-OMe HTM displayed a superior PCE of 21.14 % over an active area of 0.22 cm2. This activity was related to the standard device that utilized the standard Spiro-OMeTAD HTM, which accomplished a PCE of 17.46 %. The improved devices with the P-OMe HTM continued about 90 % of their initial PCE throughout maximum power point tracking (MPPT) for 90 days. Furthermore, these devices engaged in their activity over a further 2160 h under various temperature settings (25 °C and 35 °C), probably because of the hydrophobic property of the HTM.