Photoelectric Conversion Efficiency Research Articles

Ultrathin Non‐van der Waals Chromium Sulfide: Liquid Phase Exfoliation, Characterization, and Self‐Powered Photoelectrochemical Photodetector Application

AbstractIn the search for new advanced 2D materials for technological applications and to expand the research of non‐van der Waals (non‐vdW) 2D electronic devices, this study presents a novel strategy for liquid phase exfoliation (LPE) of non‐vdW Cr2S3 to produce Cr2S3 nanosheets (NSs). By utilizing N‐methyl‐2‐pyrrolidone (NMP), bulk Cr2S3 is separated along the (001) plane, resulting in the formation of NSs with an average thickness of ≈3 nm. Various characterization techniques are applied to the Cr2S3 material before and after LPE. Subsequently, the obtained Cr2S3 NSs are integrated into a photoelectrochemical (PEC)‐type photodetector (PD) to evaluate the photoelectric conversion efficiency under varying conditions. The findings indicate that the developed PD exhibits a distinct self‐powered photodetection capability with a photocurrent (Pph) of 39.5 nA cm−2, a photoresponsivity (Rph) of 622 nA W−1, and a detectivity (D*) of 0.5 × 107 Jones under 350 nm irradiation at 0 V. Moreover, the PD demonstrates rapid response time (0.06 s) and good long‐term stability (over 15 days), thus providing valuable insight for the advancement of non‐vdW Cr2S3‐based optoelectronic devices.

Achieving broadband NIR-I to NIR-II emission in layer-structured Mg4Nb2O9:Cr3+,Yb3+ phosphor for multifunctional applications

Broadband near-infrared (NIR) phosphor-converted light-emitting diodes (pc-LEDs) have garnered unprecedented attention in photonic, optoelectronic and biological applications. Here, an efficient broadband NIR phosphor Mg4Nb2O9:Cr3+ was achieved. Excited by 455 nm blue light, the Mg4Nb2O9:Cr3+ phosphor exhibited a maximum peak at 863 nm with a relatively wide full width at half maximum (FWHM) of approximately 178 nm and the internal quantum efficiency (IQE) was measured to be 94 %. The observed broadband emission in the NIR range can be attributed to two distinct Cr3+ centers within the Mg4Nb2O9 structure, namely Mg2+ and Mg2+-Mg2+ dimer, which was confirmed through luminescence, decay kinetic analysis and density function theory (DFT) calculations. To further broaden the NIR emission, Yb3+ was co-doped with Cr3+ in Mg4Nb2O9. Benefited from the efficient energy transfer from Cr3+ to Yb3+, the codoped Mg4Nb2O9:Cr3+, Yb3+ shows a bandwidth of 223 nm and IQE of 86.4 %. The pc NIR-LED device incorporating this phosphor achieved a NIR output power of 131.6 mW at input current of 400 mA, with a photoelectric conversion efficiency of 44.2 %. Finally, the constructed NIR-LED demonstrated multifunctional applications in non-destructive detection and information encryption.

Dual-layer cocatalysts of Co-Pi and Ni(OH)2 on BiVO4 photoanodes for efficient water oxidation

Abstract Slow oxygen evolution kinetics and severe corrosion limit the further application of BiVO4 photoelectrodes in photoelectrochemical water splitting. Here, BiVO4/Co-Pi/Ni(OH)2 photoanodes were synthetized aiming at improving its photoelectric conversion efficiency and stability. Compared with pure BiVO4 photoanode, the BiVO4/Co-Pi/Ni(OH)2 photoanode enhanced the photocurrent from 1.1 mA/cm2 to 4.5 mA/cm2 at 1.23 V versus reversible hydrogen electrode. In addition, Ni(OH)2 acted as a corrosion protection layer on the surface of the photoanode, allowing the BiVO4/Co-Pi/Ni(OH)2 photoanode to exhibit excellent stability.

Improvement of X-ray Photoelectric Conversion Performance of MAPbI3 Perovskite Crystals by Ionic Liquid Treatment

Although perovskite has great potential in optoelectronic devices, the simultaneous satisfaction of material stability and high performance is still an issue that needs to be solved. Most perovskite optoelectronic devices use quantum dot spin coating or the gas-phase growth of perovskite thin films as the photoelectric conversion layer. Due to stability limitations, these materials often experience a significant decrease in photoelectric conversion efficiency when encountering liquid reagents. The self-assembled growth of hybrid perovskite crystals determines superior lattice ordering and stability. There are three types of ionic liquids—[Emim]BF4, EMIMNTF2, and HMITFSI—that can effectively enhance the X-ray photoelectric conversion performance of hybrid perovskite crystal CH3NH3PbI3 (MAPbI3), and the enhancement in the photocurrent leads to an improvement in the sensitivity of X-ray detectors. We soak the perovskite crystals in an ionic liquid and perform two treatment methods: electrification and dilution with ETOH solution. It is interesting to find that MAPbI3 perovskite single crystal materials choose the same optimized ionic liquid species in X-ray detection and photovoltaic power generation applications, and the effect is quite the opposite. Compared with untreated MAPbI3 crystals, the average photocurrent density of Electrify-HMITFSI MAPbI3 increased by 826.85% under X-ray excitation and the sensitivity of X-ray detectors made from these treated MAPbI3 crystals significantly increased by 72.6%, but the intensity of the PL spectrum decreased to 90% of the untreated intensity.

Multifunctional Supramolecular Hydrogel Modulated Heterojunction Interface Carrier Transport Engineering Facilitates Sensitive Photoelectrochemical Immunosensing.

Highly responsive interface of semiconductor nanophotoelectrochemical materials provides a broad development prospect for the identification of low-abundance cancer marker molecules. This work innovatively proposes an efficient blank WO3/SnIn4S8 heterojunction interface formed by self-assembly on the working electrode for interface regulation and photoregulation. Different from the traditional biomolecular layered interface, a hydrogel layer containing manganese dioxide with a wide light absorption range is formed at the interface after an accurate response to external immune recognition. The formation of the hydrogel layer hinders the effective contact between the heterojunction interface and the electrolyte solution, and manganese dioxide in the hydrogel layer forms a strong competition between the light source and the substrate photoelectric material. The process effectively improves the carrier recombination efficiency at the interface, reduces the interface reaction kinetics and photoelectric conversion efficiency, and thus provides strong support for target identification. Taking advantage of the process, the resulting biosensors are being explored for sensitive detection of human epidermal growth factor receptor 2, with a limit of detection as low as 0.037 pg/mL. Also, this study contributes to the advancement of photoelectrochemical biosensing technology and opens up new avenues for the development of sensitive and accurate analytical tools in the field of bioanalysis.

CsPbI3 all-inorganic perovskite solar cells: Development status and theoretical prediction

In this paper, the crystal structure, physical properties, photoelectric conversion efficiency and large-area development of CsPbI3 all-inorganic perovskite solar cells are comprehensively analyzed. The research results of the material in photoelectric conversion efficiency, large-area development and preparation technology are summarized. In addition, through theoretical prediction and simulation, this study simulated a CsPbI3 all-inorganic perovskite solar cell with a photoelectric conversion efficiency of 28.29 %, which provided a theoretical basis for the preparation of high-performance devices.

Hot‐carrier engineering for two‐dimensional integrated infrared optoelectronics

AbstractPlasmonic hot carrier engineering holds great promise for advanced infrared optoelectronic devices. The process of hot carrier transfer has the potential to surpass the spectral limitations of semiconductors, enabling detection of sub‐bandgap infrared photons. By harvesting hot carriers prior to thermalization, energy dissipation is minimized, leading to highly efficient photoelectric conversion. Distinguished from conventional band‐edge carriers, the ultrafast interfacial transfer and ballistic transport of hot carriers present unprecedented opportunities for high‐speed photoelectric conversion. However, a complete description on the underlying mechanism of hot‐carrier infrared optoelectronic device is still lacking, and the utilization of this strategy for tailoring infrared response is in its early stages. This review aims to provide a comprehensive overview of the generation, transfer and transport dynamics of hot carriers. Basic principles of hot‐carrier conversion in heterostructures are discussed in detail. In addition, progresses of two‐dimensional (2D) infrared hot‐carrier optoelectronic devices are summarized, with a specific emphasis on photodetectors, solar cells, light‐emitting devices and novel functionalities through hot‐carrier engineering. Furthermore, challenges and prospects of hot‐carrier device towards infrared applications are highlighted.image

Enhanced Charge Transfer in Quasi-2D Perovskite by Formamidinium Cation Gradient Incorporation for Efficient and Stable Solar Cells.

Quasi-2D perovskites have attracted much attention in perovskite photovoltaics due to their excellent stability. However, their photoelectric conversion efficiency (PCE) still lags 3D counterparts, particularly with high short-circuit current (JSC) loss. The quantum confinement effect is pointed out to be the sole reason, which introduces widened bandgap and poor exciton dissociation, and undermines the light capture and charge transport. Here, the gradient incorporation of formamidinium (FA) cations into quasi-2D perovskite is proposed to address this issue. It is observed that FA prefers to incorporate into the larger n value phases near the film surface compared to the smaller n value phases in the bulk, resulting in a narrow bandgap and gradient structure within the film. Through charge dynamic analysis using in situ light-dark Kelvin probe force microscopy and transient absorption spectroscopy, it is demonstrated that incorporating 10% FA significantly facilitates efficient charge transfer between low n-value phases in the bulk and high n-value nearby film surface, leading to reduced charge accumulation. Ultimately, the device based on (AA)2(MA0.9FA0.1)4Pb5I16, where AA represents n-amylamine renowned for its exceptional environmental stability as a bulky organic ligand, achieves an impressive power conversion efficiency (PCE) of 18.58% and demonstrates enhanced illumination and thermal stability.

Optimization of near-infrared luminescence performance in Cr3+-doped double perovskite Sr2ScTaO6 phosphor by Nb5+ ion substitution

Here, Nb5+ were partially substituted for Ta5+ in the double perovskite Sr2ScTaO6: Cr3+ phosphor to improve its luminescence performance and finally obtained the optimized phosphor Sr2ScTa0.6Nb0.4O6: Cr3+. The structure, substitution mechanism, luminescence optimization mechanism, crystal field, and thermal stability of the phosphor were all thoroughly explored. The results indicate that introducing Nb5+ into Sr2ScTaO6: Cr3+ can cause lattice distortion in the host, and the distorted crystal lattice can break the forbidden transition of Cr3+, thereby enhancing its absorption of excitation light. At the same time, the full width at half maximum of the phosphor emission increased from 176.4 nm to 179.7 nm. And the internal quantum efficiency, absorption efficiency, and external quantum efficiency of the optimized Sr2ScTa0.6Nb0.4O6: Cr3+ phosphor can reach 86.3%, 49% and 42.3%, respectively. The photoelectric conversion efficiency of the optimized pc-LED increased from 5.63% to 7.80%@100 mA, indicating the introduction of Nb5+ in Sr2ScTaO6: Cr3+ improved the luminescence performance of phosphor. The above results provide directions for the development of more efficient and promising double-perovskite NIR phosphors.

Controllable Fabrication of Silicon Solar Cells with Inverted or Upright Pyramid Structures by a One-Step Copper Catalysis Method

Abstract Silicon has garnered significant attention as the primary material for solar cell preparation. Traditional alkaline etching solutions are limited to creating an upright pyramid structure on monocrystalline silicon surfaces. However, research indicates that an inverted pyramid structure exhibits superior light-trapping properties compared to the upright pyramid structure. In this study, we employed a one-step copper ion metal-assisted chemical etching process to fabricate an inverted pyramid structure on monocrystalline silicon wafers. This method allows for the customization of either inverted or upright pyramid structures by adjusting the concentration of specific solution components. Characterization of the textured silicon wafers reveals that the inverted pyramid structure exhibits lower reflectivity than both the upright pyramid structure and polished silicon. By integrating this texturing technique into the solar cell production line, we successfully produced solar cells with both inverted and upright pyramid structures. Evaluation of various solar cell parameters demonstrates that the inverted pyramid structure outperforms the upright pyramid structure, showcasing lower reflectivity and higher photoelectric conversion efficiency.

Synergistic strategy of rigid-bridge and flexible-bridge achieving high-performance and mechanical robustness all-Polymer solar cells

As the great potential of the all-polymer solar cells (all-PSCs) for wearable devices, both excellent photoelectric conversion efficiency (PCE) and mechanical robustness are essential for commercial application. Unfortunately, the current photoelectric conversion efficiency and mechanical robustness of all-PSCs are always trade-off parameters. Here, a synergistic strategy of rigid-bridge and flexible-bridge in polymerized small molecular acceptors (PSMAs) affords four polymerized acceptors PY-IT, PY-IF1, PYF1-A and PYF1-B to simultaneously improve the PCE and mechanical property of the organic solar cells (OSCs). The different molecular structures from different bridges result in different molecular stacking, energy disorder, and mechanical robustness. The rigid-bridge PY-IT-based device yields a moderate PCE of 15.07% and flexible-bridge PY-IF1-based one shows a PCE of 11.73%. The terpolymer PYF1-A with the flexible-bridges partly replacing Y units also shows an unsatisfactory PCE of 13.60%. Interestingly, PYF1-B with the flexible-bridges partly replacing the rigid-bridges presents ordered molecular stacking, inducing the all-PSCs with PCE of 16.27%, which is the highest value in the flexible non-conjugated PSMAs-based devices. Besides, PM6:PYF1-B achieves an outstanding crack onset strain (COS) of 16.08% which is much better than 8.67% for PM6:PY-IT counterpart. Intrinsically flexibility enables the flexible device based on PYF1-B with preeminent bending tolerance. Besides, PM6:PYF1-B-based blend shows better comprehensive performance with an efficiency stretchability factor (ESF) of 2.16%, which is almost twice that of PM6:PY-IT counterpart. Our work provides a clear recognition of the rigid-bridges and flexible-bridges in the PSCs and promotes the development of all-PSCs in wearable electronic devices.

Optimization of the performance of CsPbI2Br perovskite solar cells in air by adding polyethylene-graft-maleic anhydride and its mechanism

In this study, by adding Polyethylene-graft-maleic anhydride (PGMA) to the inorganic CsPbI2Br perovskite film, the coordination bonds and hydrogen bonds between PGMA and CsPbI2Br cooperate to passivate defects, regulate energy level and stabilize the perovskite structure and eventually improve the device performance. We systematically study the effects of PGMA addition on the morphology, structure, light absorption, defect concentration and carrier lifetime, hydrophobicity, and optical stability and room temperature black phase stability of CsPbI2Br films, and the photoelectric performance and air stability of PSCs, as well as their mechanism. The experimental results show that the addition of 3 wt% of PGMA greatly improves the photoelectric conversion efficiency (PCE) of CsPbI2Br PSCs by 40.19 % because of the synergistic passivation effects and energy level tuning. The hydrogen bonds between –CH2 in PGMA and I−/Br− in CsPbI2Br, along with the coordination of carbonyl groups with Cs+/Pb2+, improve carrier transport and collection by inactivating flaw and managing the level, reducing the non-radiative recombination losses. In addition, the PSCs with 3 wt% of PGMA maintain 80 % of their initial efficiency even after 600 h in high humidity air environment due to the synergistic effect of coordination bonds and hydrogen bonds. Our study provides valuable insights into the use of PGMA to improve the performance of all-inorganic CsPbI2Br PSCs and the practicality of perovskite solar cells.

Defect engineering modulated MoSe2 cathode achieves highly effective photo-responsive zinc ion battery

Photo-responsive batteries coupled with solar energy collection, conversion, and storage are promising power sources for the next generation. Dual-function photocathode with high photo-responsive characteristics and energy storage capacity to simultaneously collect and store solar energy is an ideal technological tool. However, low photoelectric conversion efficiency, carrier recombination, and poor electrical conductivity have restricted the development of dual-functional photocathodes. Herein, molybdenum selenide with selenium vacancies (named as MoSe2-VSe) is designed as a photocathode for photo-responsive zinc ion batteries. The specific capacity increased from 186.2 mAh g−1 to 234.7 mAh g−1 under visible light (1 Sun) of 0.1 A g−1. At the current density of 0.1 A g−1, the photoelectric conversion efficiency reaches 0.58 %. Notably, the photo-responsive Zn-ion battery exhibits a photo self-charging voltage of 0.98 V after 6 h illumination. The results show that the photocathode with Se vacancies can promote electron transboundary movement, reduce carrier recombination, and decrease the diffusion barrier of zinc ions. This work presents an encouraging and effective strategy for designing dual-function photocathodes and lays the foundation for the development of photo-responsive batteries.

Intense NIR-II luminescence through stabilization of tetrahedral (Mn5+O4) lumophore in apatites with high external quantum efficiency

The discovery of highly efficient near-infrared (NIR) emitting phosphors is essential for multiple spectroscopic applications. Pentavalent-manganese (Mn5+) is a rarely-reported NIR-II activator due to the its instability in inorganic solids. In this study, Mn5+-activated apatite phosphors A5(B1-xMnxO4)3X (A = Sr, Ba; B = P, V; X = OH, F, Cl, Br) were reported. Benefiting from the discrete P/VO4 tetrahedron and stabilization effect of alkaline-earth cation, Mn5+ existed as MnO43− anion can be effectively incorporated into the A5(P/VO4)3X. A selection of 16 different apatites is conducted to test the structural and compositional effect on Mn5+ stabilization and luminescence. The structure-property relationship was discussed with a detailed analysis on Mn5+ Tanabe-Sugano diagram and Dq/B calculation. Particularly, the optimized Ba5(VO4)3Cl: 0.01Mn5+ (λex = 650 nm, λem = 1181 nm) reveals an exceptional external quantum efficiency of 61.1 % with vivid turquoise body color. The multiparametric thermometry by luminescence intensity ratio (LIR) and 1E lifetime were demonstrated with excellent linear regressions (R2 > 99.9 %) and high relative sensitivities of > 1.0% K−1 in the range of physiological temperatures. A NIR-II phosphor-converted light-emitting diode (pc-LED) is fabricated with a NIR output power of 30.18 mW at 60 mA driven current and photoelectric conversion efficiency of 6.63 %.

The key role of methylenediammonium and tetrahydrotriazinium in the phase stability of FAPbI3

Formamidinium lead triiodide (FAPbI3) is the prime candidate for single-junction perovskite solar cells, despite the metastability of the phase. To improve its ambient-phase stability and produce world-record photoelectric conversion efficiencies, methylenediammonium (MDA) has been used as an additive in FAPbI3. However, the exact function and role of MDA are still uncertain. The MDA doping may exist in the perovskite lattice in either the original structure or the THTZ-H (tetrahydrotriazinium) structure. In this research, the effects of the MDA and THTZ-H doping FAPbI3 perovskite on its stability are explored by first-principles calculations. Both MDA and THTZ-H doping can improve the stability of FAPbI3 perovskite from a structural perspective due to lattice strain and stronger H–I bonds. However, the doping mechanisms differ significantly in terms of electronic properties. The MDA doping acts by the traditional passivation mechanism. It can eliminate the iodine interstitial defect states that trap charge carriers and inhibit iodine interstitial defect migration. The THTZ-H cation can directly contribute to the band edge construction in the FAPbI3 bulk. Electron delocalization in the π-conjugated ring structure lowered the frontier orbital separation of the THTZ-H organic molecule and enabled orbital overlap with the inorganic moiety. The in-depth understanding of the mechanism of improving stability in this study would facilitate the application of FAPbI3 perovskite optoelectronic devices.

Perovskite materials advance the potent sensor exploration

AbstractPerovskite materials with unique crystal structure have developed rapidly in recent years owing to their special physical and chemical properties, such as high light absorption and extraordinary electrocatalytic properties. Metal halide perovskites are quite attractive in various fields because of their simple manufacturing process, adjustable band gap, good charge transfer performance, and high theoretical photoelectric conversion efficiency. Therefore, perovskite oxides mixed with metal elements become ideal samples for studying the surface and catalytic performance of catalysts. In this review, various metal perovskites are clearly classified and introduced according to the corresponding synthesis methods, including hydrothermal method, sol–gel method, and high‐temperature solid phase, as well as coprecipitation. The excellent properties of perovskite make it extensively used in nanotechnology, chemistry, environmental protection, and material science, especially in solar cells and sensors. In particular, the nanosized perovskite materials are becoming more and more popular in sensors, which was reviewed in detail here. Most importantly, the design of electrochemical sensors using perovskite nanomaterials with low detection limit and high sensitivity will bring new insight into the detection of biomolecules. Both challenges and prospects of metal perovskites were discussed for promoting the development of biosensors in the end.

Defects and Defect Passivation in Perovskite Solar Cells.

Perovskite solar cells have made significant strides in recent years. However, there are still challenges in terms of photoelectric conversion efficiency and long-term stability associated with perovskite solar cells. The presence of defects in perovskite materials is one of the important influencing factors leading to subpar film quality. Adopting additives to passivate defects within perovskite materials is an effective approach. Therefore, we first discuss the types of defects that occur in perovskite materials and the mechanisms of their effect on performance. Then, several types of additives used in perovskite solar cells are discussed, including ionic compounds, organic molecules, polymers, etc. This review provides guidance for the future development of more sustainable and effective additives to improve the performance of solar cells.

Highly Doped Conjugated Polyelectrolytes with Large Work Function for Efficient Hole Injection/Collection in Organic Photoelectric Devices

The existing deficiencies in traditional hole‐transporting layer (HTL) materials poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and molybdenum oxide restrict the further advance in the photoelectric conversion efficiency of organic photoelectric devices. Although conjugated polyelectrolytes (CPEs) display great advantage in serving as HTLs, the low work function (WF) and poor conductivity lead to the inferior performances of CPE‐modified devices. Herein, the important influence of electrostatic potential on p‐doping property of CPEs is revealed, and hence a series of CPEs with obvious p‐type self‐doping property based on simple chemical structures of benzene and thiophene derivatives are designed and synthesized. With a higher electron density of conjugated backbone, the CPE PB3T shows an improved doping effect. Moreover, a simultaneous enhancement of WF and conductivity can be achieved by doping the CPE with polyoxometalate (POM). The resulting CPE composite PB3T:POM exhibits good hole injection/collection ability and is compatible with large‐area production technique. The organic solar cells with active areas of 0.04 and 1.00 cm2 exhibit power conversion efficiency values of 18.1% and 15.6%, respectively. PB3T:POM is also used as HTL to fabricate organic light‐emitting diode (OLED) device, and the OLED exhibits a superior luminous efficiency to the PEDOT:PSS device but with a significantly reduced turn‐on voltage from 4.2 to 3.4 V.

Effect of Asymmetric InAlGaN/GaN Superlattice Barrier Structure on the Optoelectronic Performance of GaN-Based Green Laser Diode

An asymmetric InAlGaN/GaN superlattice barrier structure without the first quantum barrier layer (FQB) is designed, and its effect on the optoelectronic performance of GaN-based green laser diode (LD) has been investigated based on simulation experiment and analytical results. It is found that, compared with conventional GaN barrier LD, device performance is significantly improved by using FQB-free asymmetric InAlGaN/GaN superlattice barrier structure, including low threshold current, high output power, and high photoelectric conversion efficiency. The threshold current of LD with novel structure is 16.19 mA, which is 22.46% less than GaN barrier LD. Meanwhile, the output power is 110.69 mW at an injection current of 120 mA, which is 16.20% higher compared to conventional LD, and the wall-plug efficiency has an enhancement of 9.5%, reaching 20.27%. FQB-free asymmetric InAlGaN/GaN superlattice barrier layer can reduce optical loss, suppress the polarization effect, and improve the carrier injection efficiency, which is beneficial to improve output power and photoelectric conversion efficiency. The novel epitaxial structure provides theoretical guidance and data support for improving the optoelectronic performance of GaN-based green LD.

Improvement of Photovoltaic Performance of Perovskite Solar Cells by Synergistic Modulation of SnO2 and Perovskite via Interfacial Modification.

In the past decade, perovskite solar cell (PSC) photoelectric conversion efficiency has advanced significantly, and tin dioxide (SnO2) has been extensively used as the electron transport layer (ETL). Due to its high electron mobility, strong chemical stability, energy level matching with perovskite, and easy low-temperature fabrication, SnO2 is one of the most effective ETL materials. However, the SnO2 material as an ETL has its limitations. For example, SnO2 films prepared by low-temperature spin-coating contain a large number of oxygen vacancies, resulting in energy loss and high open-circuit voltage (VOC) loss. In addition, the crystal quality of perovskites is closely related to the substrate, and the disordered crystal orientation will lead to ion migration, resulting in a large number of uncoordinated Pb2+ defects. Therefore, interface optimization is essential to improve the efficiency and stability of the PSC. In this work, 2-(5-chloro-2-benzotriazolyl)-6-tert-butyl-p-cresol (CBTBC) was introduced for ETL modification. On the one hand, the hydroxyl group of CBTBC forms a Lewis mixture with the Sn atom, which reduces the oxygen vacancy defect and prevents nonradiative recombination. On the other hand, the SnO2/CBTBC interface can effectively improve the crystal orientation of perovskite by influencing the crystallization kinetics of perovskite, and the nitrogen element in CBTBC can effectively passivate the uncoordinated Pb2+ defects at the SnO2/perovskite interface. Finally, the prevailing PCE of PSC (1.68 eV) modified by CBTBC was 20.34% (VOC = 1.214 V, JSC = 20.49 mA/cm2, FF = 82.49%).