Correction for ‘Work function modulated water-soluble anode interlayer with copper-ion doping for precise signal detection in organic photodiodes’ by Min Soo Kim et al. , J. Mater. Chem. C , 2025, 13 , 15603–15614, https://doi.org/10.1039/D5TC01630D.

Abstract This study presents rhodamine hybrids comprising para-quinonemethide groups (Rh-PQMs). Rh-PQMs (MI and MII) exist in open and closed ring conformations and present promising possibilities as semiconductors due to the differences in their absorptions and fluorescence. In this regard, we explored the electrical character of photo diodes (PDs), including Rh-PQMs (MI-closed/open and MIIclosed/open) as the interfacial layers. These PDs were characterized in the dark and under illumination of different intensities. Surprisingly, only the MI-open and MII-open showed favorable outcomes. MIIopen PD had a five-fold increased rectifier ratio (RR) compared to MI-open PD at ±2 V voltage. In the presence of 100 mW/cm² illumination at -2 V, the MI-open PD recorded a current of about 100 µA, whereas the MII-open PD recorded a current of about 80 µA. Additionally, the work examined spectral sensitivity, detectivity, noise equivalent power, and external quantum efficiency of both PDs. Experiments showed the prospect of Rh-PQMs' open conformations as viable devices with tolerable performances.

Cadmium sulfide (CdS) thin films were synthesized using the spray pyrolysis technique and deposited on glass substrates at controlled temperatures of 303 K, 333 K, and 363 K to investigate their optical and solid-state properties for optoelectronic device applications. Precursor solutions of cadmium nitrate tetrahydrate and thiourea were prepared in aqueous media, homogenized, and atomized onto pre-cleaned, preheated substrates, forming films through thermal decomposition. Thereafter, Optical characterization was done using UV-Vis spectrophotometry. Absorbance spectra revealed maximum absorption in the UV- visible region (280-500 nm), with the 333 K film exhibiting the highest absorbance (2.01), indicating enhanced light-harvesting capability. Refractive index analysis showed temperature dependent n - shaped dispersion profiles, with peak values of 1.625 (303 K), 2.52 (333 K), and 2.125 (363 K), reflecting variations in film compactness and electronic structure. Tauc plot analysis confirmed direct allowed electronic transitions, yielding band gap energies of 3.87 eV (303 K), 2.30 eV (333 K), and 2.41 eV (363 K). Films deposited at 333 - 363 K displayed band gap values consistent with literature and suitable for visible-light optoelectronic applications, whereas the wider band gap at 303 K suggests limited crystallinity or quantum confinement effects. The result of this study has demonstrated that substrate temperature significantly enhances the optical performance of CdS thin films prepared by spray pyrolysis, with the 333-363 K range offering the best properties for devices such as solar cells, photodetectors, and optical sensors.

Efficient dynamic vision requires capturing instantaneous changes and temporal context, yet existing image and event sensors rely on power-hungry digital processing. Here, we introduce an in-sensor dual-response architecture that concurrently generates analog event spikes and persistent memory tails. A prototype sensor integrates phosphor pairs with silicon photodiodes and transimpedance amplifiers to achieve microsecond- and millisecond-scale dual kinetics. Measurements during light-emitting diode replay reconstruct event frames that match software frame differences, while the slow channel behaves as a linear reservoir of motion history. A single memory frame fed to a convolutional neural network enables accurate classification of human actions (93.1%) and vehicle trajectories (98.0%), as well as speed estimation with errors of 2.15 km/h. Integration with a compressive optical neural network front end mapping 4900 inputs to 16 per frame yields 93.3% action classification accuracy. By eliminating analog-to-digital conversion and digital accumulation, this approach enables ultralow-latency, ultralow-power neuromorphic vision.

Generative artificial intelligence (AI) models including GPT, Gemini, and DeepSeek are reshaping embodied agents, temporal prediction, and autonomous driving, demanding a ten-fold annual growth in training FLOPS that Moore’s law can no longer sustain. Consequently, scale-out GPU clusters require >400 Gb/s lane-rate optical interconnects within AI data-centers (AIDCs). Single-photodiode direct detection offers density, latency, and energy advantages, but DAC bandwidth remains limited to around 70 GHz. We present an optical triple-band multiplexing scheme that replaces high-frequency radio frequency (RF) mixers and local oscillators (LOs) with photonic components. A Mach–Zehnder modulator (MZM) generates 80-GBd PS-PAM-20 signal while an in-phase/quadrature (IQ) modulator driven by a wavelength-offset laser creates two independent 35-GBd PS-64-QAM bands. The proposed optical multiplexing method breaks conjugate symmetry and enhances dispersion tolerance of the direct detection system. After 200 m SSMF transmission and single 70-GHz photodiode (PD) detection, digital signal-signal beating interference (SSBI)/cross-beating compensation enables the recovery of net 543.9 Gb/s signal (line rate of 686.6 Gb/s) using only 45-GHz DACs. The optical multiplexing architecture provides a path to beyond-400 Gb/s lanes and demonstrates a scalable, energy-efficient solution for next-generation AI clusters.

This Letter presents a novel, to the best of our knowledge, miniature three-dimensional (3D) force sensor featuring integrated light emitting diode (LED)-photodiode (PD) transceivers to achieve the detection of the amplitude and tilt angle of the 3D force. It senses the change of the reflected light path of the photoelectric transceivers caused by the displacement of elastomers under force, based on the photoelectric principle. In order to reduce volume and improve performance, the LED-PD transceivers are designed and monolithically fabricated by utilizing the technique of multiple quantum well structures. The characteristics of the photoelectric transceivers are tested, with the overlapping wavelength of 439.75-483.97 nm between the LED emission spectrum and the PD detection spectrum. The experiment demonstrates that this 3D force sensor has the ability to measure forces of 0-6 N and tilt angles of up to 3.9°, where good linear relationships of output response are obtained. The measured repeatability error and hysteresis error are less than 3.46% and 3.41% for the tilt angle, and 3.13% and 3.13% for the amplitude of the 3D force, respectively, due to the collaborative design of the transceivers and elastomers.

Abstract This study presents the development of an advanced soft x-ray (SXR) diagnostic for the RFX-mod2 device, tailored for photon energies of ∼1–25 keV. The system will consist of two gas electron multiplier (GEM) detectors designed to enable energy-resolved 1D tomographic reconstructions (i.e. reconstructions of the SXR radial emissivity profiles). Simulations have shown its potential to achieve a spatial resolution of ∼1 cm and to differentiate between thermal and suprathermal plasma components. This capability is particularly valuable for RFX-mod2, where strong magnetic reconnection events are expected to generate significant SXR spectral tails in localized regions. The GEM-based diagnostic will therefore complement the SXR silicon photodiode arrays (SiPh) foreseen for installation at RFX-mod2 [2]. SiPh have been successfully employed for two-dimensional tomographic reconstruction of the SXR emissivity at RFX-mod. However, their operation in current mode allows only measurements of photon flux, lacking energy resolution. In contrast, GEM detectors operate in photon-counting mode. They provide energy-resolved measurements with a temporal resolution of ∼10 µ s and an energy resolution of ∼20% at 6 keV. They also offer a high rate capability (∼1 MHz/channel) and high radiation hardness. This paper presents the CAD model of the GEM diagnostic, as well as the custom-made simulations used to drive design choices and develop the energy resolved 1D tomographic reconstruction algorithm.

Nymphaea nouchali is a prevalent water lily well recognized for its dietary and traditional medicinal purposes, attributed to its diverse phytochemical composition. This study is the first to provide a comprehensive metabolite profiling of Egyptian Nymphaea organs viz., flower, leaf, and stem using UHPLC/PDA/ESI-QTOF-MS high-resolution ultra-performance liquid chromatography Electrospray ionization/ photo diode array detector/ Quadrupole time-of-flight mass spectrometry. Alongside the in-vitro antioxidant activities employing different methods viz., DPPH, ATBS, NO scavenging, hydrogen peroxide scavenging, and cholinesterase inhibitory (AChE) activity were investigated. A total of 185 secondary metabolites were annotated belonging to 10 chemical classes viz., phenolic acids, ellagitannins, flavonoids, anthocyanins, alkaloids, amino acids and vitamins, organic acids, fatty acids & amides, lipids and sugars/sugar derivatives. Among them, 72 are newly reported viz., ellagic acid, corilagin, patuletin glycosides, naringenin, eriodictyol glycosides, spermidine alkaloids, and 33 lipids in Egyptian Nymphaea. Flowers recorded the highest antioxidant activities with IC50 values (45.15 µg/ml) for DPPH, (5.02 µg/ml) for ABTS+, (54.07 µg/ml) for NO, (55.04 µg/ml) for H2O2 assays and (1.85 µg/ml) for AChE inhibition. Flowers demonstrated potential antioxidant activities in correlation to their flavonoids, anthocyanins and alkaloids. Multivariate analysis (MVA), including unsupervised tools like principal component analysis (PCA) & hierarchical cluster analysis (HCA), and supervised orthogonal projections to latent structures discriminant analysis (OPLS-DA) are likewise employed. This research is designed to deal in depth with the chemical profile of the Egyptian water lily and tried to correlate such profile with their corresponding neuroprotective effect. Furthermore, in-vivo biological studies are planned to confirm the active agent post isolation from the active organs following results based on chemometric analysis. As future work, it is highlighted to target the isolation of novel entities.Supplementary InformationThe online version contains supplementary material available at 10.1038/s41598-025-30937-y.

Perovskite photodetectors have emerged as a potential replacement for silicon photodiodes in modern cameras due to their high sensitivity to visible light and ability to be easily integrated into existing electronics. However, the use of perovskite photodetectors in conventional CMOS image sensors requires the application of reverse bias, which can lead to unstable detector performance due to ion migration effects. In this article, we propose a new approach that involves the application of forward voltage pulses to attenuate ion migration while still enabling the capture of photocurrent under reverse bias. Our results show that using this technique after each cycle of signal integration allows for stable operation of perovskite photodetectors for over 180 h, while applying a constant reverse bias leads to degradation within just 10 min. Additionally, we demonstrate stable imaging using alternating voltage and 8 × 8 crossbar arrays of perovskite photodetectors.

HighlightsWhat are the main findings?We introduced a novel homogenous hybrid image sensing technique.The blur image captured by CMOS Image Sensor (CIS) can be compensated effectively.What are the implications of the main findings?The world’s smallest pixel size of the hybrid image sensor can be achieved.The proposed technique can compensate the motion blur of the CIS image captured in the situation of jogging at a 3 m distance.We propose and demonstrate a novel motion blur-free hybrid image sensing technique. Unlike the previous hybrid image sensors, we developed a homogeneous hybrid image sensing technique including 60 fps CMOS Image Sensor (CIS) and 1440 fps pseudo Dynamic Vision Sensor (DVS) image frames without any performance degradation caused by static bad pixels. To achieve the fast readout, we implemented two one-side ADCs on two photodiodes (PDs) and the pixel output settling time can be reduced significantly by using the column switch control. The high-speed pseudo DVS frame can be obtained by differentiating fast-readout CIS frames, by which, in turn, the world’s smallest pseudo DVS pixel (1.8 μm) can be achieved. In addition, we confirmed that CIS (50 Mp resolution) and DVS (0.78 Mp resolution) data obtained from the hybrid image sensor can be transmitted over the MIPI (4.5 Gb/s four-lane D-PHY) interface without signal loss. The results showed that the motion blur of a 60 fps CIS frame image can be compensated dramatically by using the proposed pseudo DVS frames together with a deblur algorithm. Finally, using the event simulation, we verified that a 1440 fps pseudo DVS frame can compensate the motion blur of the CIS image captured in the situation of jogging at a 3 m distance.

To address the issue of link stability in vehicle-to-everything visible light communication (VLC) systems being susceptible to dynamic environmental factors in complex road conditions, which directly reduce the effective communication range, this paper proposes a hybrid receiver architecture based on a linear photodiode (PD) and a single-photon avalanche diode (SPAD) array. The architecture builds a dynamic optical scheduling core, i.e., the hybrid controller, by means of a micro-electro-optical selective switch, which achieves adaptive switching of the incident signal between the linear receiving path of the PIN module and the photon detection path of the SPAD array module. Our hybrid PD/SPAD receiver advances beyond prior indoor-focused designs by addressing outdoor vehicular challenges: weather attenuation, turbulence, pointing errors, and dynamic illumination. The resulting adaptive path selection ensures stability and minimizes BER across all operating conditions. Simulations at a target BER=10 −3 show that under low-light fog (visibility V =0.5km), the hybrid extends reliable range from 60 (PIN-only) to 157 m (+162%); under sunny conditions with 20 mW background illumination, it achieves 29 versus 16 m for SPAD-only (+81%); and under cloudy conditions ( V =5km) it maintains >50Mb/s at 200 m while reducing outage probability by 85% relative to the best single-path baseline. By automatically selecting the optimal detection path as channel conditions vary, the proposed architecture enhances link reliability, extends operating range, and improves availability for robust V2V-VLC in complex road environments.

Abstract A novel class of semiconducting compounds, metal‐halide perovskites (MHPs), has emerged as a versatile platform for advanced optoelectronic device architectures, offering a unique combination of exceptional physical properties and facile processing. In this study, we present a monolithic high‐speed photodetector capable of directly sensing the time delay between two light pulses with a temporal resolution of at least 170 ps, corresponding to a light propagation distance of ~5 cm—making it well suited for Light Detection and Ranging (LiDAR) applications. This outstanding time resolution is achieved through a signal‐balancing detection scheme that effectively overcomes the limitations of conventional photodetectors, whose response speed is inherently limited by charge‐carrier lifetime and transit time. The device exhibits an exceptionally low noise spectral density, comparable to that of state‐of‐the‐art silicon photodiodes. The fully symmetric device stack comprises a crystalline CsPbBr 3 absorber layer tens of microns thick, fabricated via a confined melt process. Comprehensive electro‐optical characterization reveals charge‐carrier lifetimes and mobilities on both microscopic and macroscopic length scales, using transient photoluminescence, time‐resolved photocurrent, time of flight, and terahertz pump–probe spectroscopy. The CsPbBr 3 layer exhibits charge‐carrier lifetimes exceeding 100 ns, a microscopic electron–hole mobility of 15 ± 1 cm 2 V −1 s −1 , and a macroscopic non‐dispersive hole mobility of 8.5 cm 2 V −1 s −1 . image

Accurate solar irradiance estimation for moving vehicles is essential for effective thermal management and energy optimization, particularly in electric vehicles (EVs) where cabin climate control directly impacts battery usage and driving range. However, existing approaches often overlook the dynamic environmental conditions encountered during vehicle movement, limiting their applicability in real-world scenarios. This study proposes a novel machine learning framework that integrates satellite remote sensing and sky camera imagery to estimate solar irradiance around moving vehicles in real time. The framework was validated using comprehensive field data collected from an instrumented vehicle equipped with solar irradiance sensors, GPS tracking, and environmental monitoring systems across various routes and seasonal conditions. By fusing multi-source environmental data, the model delivers high spatiotemporal resolution predictions of solar irradiance under diverse urban and atmospheric conditions. Results show strong performance, with normalized root-mean-square errors of 14.61% in summer and 17.10% in winter. These accurate predictions enable adaptive, location-aware thermal management strategies that proactively adjust climate control based on anticipated solar exposure. The integration of satellite and ground-based data sources ensures scalability across regions and vehicle types, establishing a foundation for intelligent thermal management systems that enhance energy efficiency and passenger comfort in both conventional and electric vehicles.

Many researchers have reported physical, and chemical deposited thin films. Nevertheless, the deposition methods had a strong effect on the properties of the produced films. SILAR method has been used to produce different thin films for various studies over the years. Alternative deposition methods have attracted extensive attention while this approach has several advantages. Seemingly, high area deposition could succeed at low temperatures, with standard inexpensive equipment, without the requirement of a vacuum chamber and some unique films properties could be controlled. The SILAR process usually includes four stages; adsorption, a wash, reaction and second wash were performed to rinse off unreacted species. SILAR method was used to deposit a thin film of metal sulfides on substrates in this study. The primary outcomes are the characterization of the films and their application after finishing. It was observed that the number of deposition cycles, rinsing time, immersion duration and precursor concentration affected the crystallinity, grain size, film thicknesses and surface morphologies of the deposited films. Furthermore, the results confirmed these films for solar cells, sensors and supercapacitors applications. The power conversion efficiency also improved of Cu2SnS3 about 0.11% and copper zinc tin sulfide were found to be 0.396%, respectively.

While flexible materials have advanced in areas such as solar cells, sensors and electronics, no flexible scintillator has yet been developed for use in radiation detectors. To address this gap, we developed a flexible scintillator sheet and demonstrated its ability to perform real-time imaging of radiation beams on curved surfaces during therapy. The scintillator was fabricated by mixing Ce-doped Gd3Al2Ga3O12 (GAGG) powder with a two-part silicone adhesive, spreading the mixture onto a plastic plate to solidify, and then peeling it off. This simple process yielded GAGG powder-based scintillator sheets with a thickness of 0.4 mm and dimensions of 20 cm × 20 cm. When combined with a cooled CMOS camera, the flexible scintillator sheet effectively captured scintillating spots during clinical proton beam irradiation in darkened therapy rooms. The system performed effectively on the curved contours of radiotherapy thermoplastic fixtures. Its flexibility makes the scintillator sheet well-suited for use on complex surfaces in radiation imaging, underscoring its potential for future applications in radiation detection and measurement as well as biomedical imaging field.

A nanowatt oscillator powered only by 68 MeV proton irradiation of a crystalline silicon photodiode pair

A Monte Carlo analysis of the feasibility of a 3D structure build up with silicon photodiodes for in vivo dosimetry in radiotherapy

As a core component of MEMS LiDAR, the 2D MEMS mirror, with high-precision optical angle detection, is a key technology for radar scanning and imaging. Existing piezoresistive detection schemes of mirrors suffer from high fabrication complexity, high temperature sensitivity, and a limited accuracy of only 0.08°, failing to meet the requirements for vehicular and airborne scanning applications. This study focuses on a two-dimensional electromagnetic MEMS mirror. Based on the reflection principles of geometric optics, angle detection schemes with photodiode (PD) arrays are analyzed. A novel four-quadrant optical measurement sensor featuring a 16-PD array is proposed. This design replaces conventional large-area PDs with a compact PD array, effectively mitigating nonlinearity and low accuracy issues caused by oversized PD trenches and edge dimensions. High-precision detection of the mirror’s deflection angle is achieved by measuring the current variations induced by the reflected spot position on the PDs in each quadrant. The experimental results demonstrate that the 16-PD array optical angle sensor achieves an accuracy between 0.03° and 0.036° over a detection range of ±8°.

In this study, a detailed investigation on the transparent conducting oxide (TCO) and dielectric properties of undoped ZnO and Hf-doped ZnO (HZO) thin films has ben presented. ZnO-based TCOs are highly valued in optoelectronic and photovoltaic applications due to their unique combination of high optical transparency and electrical conductivity. Hafnium doping introduces an additional degree of tunability, enabling ZnO films to demonstrate both conducting and dielectric characteristics depending on stoichiometry as well as the doping concentration. This dual behaviour enhances the versatility of HZO for a wide range of technological applications, including solar cells, sensors and capacitive devices.Atomic layer deposition (ALD) method was used to deposit ZnO and HZO films, because ALD offers precise control over film thickness, doping concentration and uniformity at the atomic scale. ALD's self-limiting reaction mechanism ensures conformal growth on complex surfaces, enabling the production of high-quality, reproducible TCO and dielectric films. The deposition was performed on cleaned glass and p-Si substrates, maintaining a consistent film thickness of approximately 50 nm, which was confirmed through spectroscopic ellipsometry. Prior to the deposition, the substrates were cleaned using standard cleaning procedures. ZnO and HZO films with varying Hf doping concentrations were deposited at 250 °C using diethylzinc (DEZ), deionized water (DI), and tetrakis(ethylmethylamino)hafnium (TEMAHf) as the zinc, oxidant and hafnium precursors, respectively. The doping concentration was varied using the super-cycle approach. For low Hf doping (3 %), the HZO films were deposited at a 10:1 super-cycle ratio, ten cycles of DEZ-DI precursors followed by one cycle of TEMAHf and water precursors. For higher Hf doping concentrations (9 %), a 1:1 super-cycle ratio was employed. The structural properties of the films were analysed using grazing incidence X-ray diffraction (GIXRD), confirming that ZnO and HZO films with low Hf doping (10:1) exhibit a polycrystalline hexagonal wurtzite structure. However, higher Hf doping concentrations (1:1) led to a reduced crystallinity and conductivity of the films, which are due to the limited solubility of Hf in the ZnO matrix, as confirmed by elemental analysis. Surface morphology and topography were analyzed using field-emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM), revealing smooth and uniform film surfaces. Optical measurements performed using UV–Vis-NIR spectroscopy demonstrated an optical transmittance > 80% across the visible spectrum for all films, highlighting their suitability for optoelectronic applications. Electrical measurement results showed that undoped ZnO and Hf-doped ZnO films with higher doping concentrations exhibited high resistivity, whereas low Hf-doped ZnO films displayed enhanced conductivity with a minimum resistivity of 1.5 mΩ-cm. For electrical characterization, Al contacts were thermally evaporated onto both sides of ZnO/p-Si and HZO/p-Si heterojunctions. Current-voltage (I-V) measurements revealed a transition from rectifying to Ohmic behaviour with decreasing Hf concentration, which was attributed to variations in the work function of HZO film. Kelvin probe measurements further validated these findings by confirming changes in the work function of HZO films with the doping concentration. The interface properties of these heterostructures were studied using capacitance-voltage (C-V) measurements at different frequencies and impedance spectroscopy.Overall, this study demonstrates that ALD-grown Hf-doped ZnO films at lower doping concentrations are promising TCO materials for photovoltaic and optoelectronic devices due to their superior conductivity and optical transparency. Conversely, highly Hf-doped ZnO films exhibit enhanced dielectric properties, making them suitable for advanced electronic applications such as capacitors and memristors. These findings provide valuable insights into the tunability of ZnO-based materials for multifunctional applications. Detailed results and analyses will be presented at the conference. Figure 1

Organic photodiodes (OPDs) are emerging as leading candidates for next-generation image sensors owing to their tunable photophysical properties, which enable broadband detection from the visible to X-ray regimes and open new possibilities for intelligent systems such as fingerprint sensing, gesture recognition, and medical imaging. Across these applications, minimizing the dark current density (Jd) is of paramount importance, as it sets the noise floor, while thermal and low-frequency noises further depend on the shunt resistance and trap dynamics, thereby constraining the signal-to-noise ratio, dynamic range, and specific detectivity (D*). This review elucidates the microscopic origins of Jd by distinguishing two universal leakage channels: bulk thermal generation via mid-gap or tail-state traps and field-assisted carrier injection through interfacial barriers. It further clarifies how these mechanisms define the shot and thermal noise limits that constrain sensitivity. Beyond white-noise considerations, this work discusses low-frequency (1/f) noise, whose origins in organic semiconductors remain debated yet critically impact stability and D*. Within this framework, recent progress is surveyed in active-layer design, disorder management, and interlayer engineering. By benchmarking strategies against unified figures of merit, a roadmap toward sub-femtoampere Jd, suppressed noise, and enhanced D* is charted, highlighting key material challenges and architectural opportunities for future commercial systems.