Phase Transition Of Vanadium Dioxide Research Articles

Multifunctional Reconfigurable Vanadium Dioxide Integrated Metasurface for Reflection, Asymmetric Transmission and Cross‐Polarization Conversion in Terahertz Region

AbstractIntegrating reconfigurable and diverse functionalities into a single metasurface at terahertz (THz) frequencies is an emerging research topic that faces significant challenges. Here, a reconfigurable THz metasurface is proposed, offering diversified functionalities based on the phase transition of vanadium dioxide (). The proposed metasurface can switch from wideband reflection to wideband cross‐polarization conversion (CPC) and asymmetric transmission (AT) for linearly polarized waves. When is in its fully metallic state, the metasurface efficiently reflects normally incident waves ranging from 0.2 to 2.8 THz, with total reflection exceeding 0.8. When is in its insulating state, the metasurface achieves nearly perfect wideband cross‐polarization conversion with CPC efficiency above 0.99 from 0.46 to 2.67 THz, and excellent AT effect with efficiency over 0.9 from 0.65 to 2.29 THz for normal incidence of linearly polarized waves. Moreover, the high efficiency of CPC and AT effects is maintained over a wide range of incident angles. The proposed switchable metasurface with diverse functionalities is expected to enable cutting‐edge research and innovative applications in THz communication, sensing, and imaging.

Terahertz switchable vortex beam generator based on vanadium dioxide reflective metasurface

Vortex beams exhibit significant potential for applications in diverse fields, such as optical communications, particle manipulation, and quantum information, due to the orbital angular momentum (OAM) they carry. While substantial progress has been made in the generation of vortex beams and the control of their wavefronts, further optimization is necessary to enhance the variability of OAM modes and the modulation of focusing. This study presents three tunable vortex beam generators based on vanadium dioxide metasurfaces. By leveraging the insulator-metal phase transition of vanadium dioxide (VO2), these metasurfaces can convert incident left-circularly polarized (LCP) light into a deflected vortex beam with adjustable OAM modes, a switchable focused vortex beam, or a focused vortex beam with tunable OAM modes in the terahertz band. Specifically, by varying the angle of the incident light, a vortex beam carrying variable topological charges can be deflected over a range from -34° to 90°. Vortex beams with a topological charge of 1 enable reversible switching between near-focus (0.85 mm) and far-focus (3.2 mm), demonstrating highly effective tunable focusing capabilities. Additionally, focused vortex generators with switchable topological charges are proposed. Focused vortex beams with a topological charge of -1 are generated in the insulating state, while a topological charge of -2 is observed in the metallic state. These vortex beam generators allow for different phase gradient distributions in the phase transition states, enabling diverse OAM and variable focuses. This research has potential applications in areas such as dynamic imaging and optical communications.

Vanadium-dioxide-assisted multifunctional switchable terahertz metamaterial devices

A multifunctional, switchable terahertz (THz) metamaterial (MM) device with wideband absorption and polarization conversion capabilities has been developed, based on the insulator-metal phase transition of vanadium dioxide (VO2). In its metallic state, the device operates as a wideband absorber within the range of 2.56–6.74 THz, achieving a bandwidth of 4.18 THz and an absorption rate of ≥90%. The wideband absorption is insensitive to both oblique incident angles and polarization. When VO2 is in its insulating state, the device switches to a polarization converter, facilitating linear-to-cross polarization (LTX) conversion between 1.04 and 4 THz, and linear-to-circular polarization (LTC) conversion between 1 and 1.04 THz, with a conversion efficiency exceeding 90%. Additionally, the effects of incident angle and polarization angle on the device’s performance were analyzed. This THz device offers advantages of wide angle, wide bandwidth, and high efficiency, making it a valuable reference for research into new multifunctional THz devices. It has great potential applications in short-range wireless THz communication, ultrafast optical switches, high-temperature resistant switches, transient spectroscopy, and optical polarization control devices. In specific application scenarios, particularly in fields requiring efficient detection, transmission, and analysis—such as security and non-destructive testing, secure communication systems, imaging and sensing, multidimensional spectral analysis, pollutant detection, smart stealth coatings, dynamic optical control devices, and integrated optical systems—these devices offer multifunctional capabilities. They enhance system performance and flexibility, meeting diverse application needs.

Thermal-stimulated phase transition of vanadium dioxide enabling versatile transduction and smart applications

Thermal-stimulated phase transition of vanadium dioxide enabling versatile transduction and smart applications

Switchable terahertz polarization converter with dual-functional reflective conversion and asymmetric transmission based on vanadium dioxide

A dual-functional polarization converter designed for both reflective polarization conversion and asymmetric transmission in the terahertz band is proposed, leveraging the phase transition of vanadium dioxide. In its metallic state, vanadium dioxide facilitates reflective mode operation. Simulation results demonstrate that the polarization conversion rate exceeds 90%, converting linearly polarized or circularly polarized waves into cross-polarized waves, with relative bandwidths of 100.6% and 100.8%, respectively. Experimental validation confirms the polarization conversion capabilities of the device. In the insulating state of vanadium dioxide, the converter demonstrates a notable asymmetric transmission effect for wide-angle incident circularly polarized waves. The proposal of this converter fills the gap of switchable polarization conversion and asymmetric transmission functions, and has broad application prospects in multifunctional polarization devices and multi-channel polarization detection.

Defect‐Driven Light Perception and Memristor Storage with Phase Transition in Vanadium Dioxide

AbstractTunable optical information storage is crucial in artificial retinal systems for mimicking neurobiological visual characteristics. The perception and storage of light signals rely heavily on the regulation of the conductivity states of memristor materials (e.g., transition metal oxides). Controlling light memristor behavior via defects and polymorphic phases remains underexplored and differs from traditional plasticity training via repeated testing. In this study, defect‐driven ultraviolet light perception and memristor storage with phase transitions in vanadium dioxide (VO2) thin films are presented. The effects of oxygen defects and the corresponding polymorphic phases on ultraviolet light memristors are investigated. The dependence of phonon vibrations and insulator–metal transition behavior on defect levels are revealed. Self‐doping and polymorphs enable VO2 to exhibit distinct ultraviolet memristor performance. It is anticipated that defect‐driven light memristors significantly contribute to the realization of artificial synaptic devices and the implementation of advanced electronic neuron systems.

Temperature-switchable anti-reflective structure based on vanadium dioxide phase transition in the visible and near-infrared wavelength regions

Nowadays, the anti-reflective (AR) structures are essential in many applications like display screens, photovoltaic structures and light detection and ranging. Traditionally, the AR surfaces are almost multilayer (ML) structures to minimize the reflection value by producing the destructive interference of reflected light beams at the layers’ interfaces. In the new and advanced AR surfaces, nanostructures (NS) are proposed and used for minimizing the reflection. In this paper, we propose a temperature-switchable AR-ML-NS, based on vanadium dioxide (VO2) phase transition from semiconductor to metallic state around the critical temperature of 68 °C. Here, a pyramidal NS of VO2 is considered on top surface of a ML which minimizes the light reflection of the structure. While some AR structures may work in some restricted light wavelengths, here our proposed structure’s AR wavelength region can be tuned between the visible and near-infrared (NIR) region through the thermal phase transition of VO2. VO2 phase control leads to a temperature-switchable AR structure, which is of great importance for investigating different switchable AR structures.

Dynamically tunable photonic spin Hall effect based on insulating-metallic phase transition of Vanadium Dioxide

The photonic spin Hall effect (PSHE) can manifest as the spin-dependent splitting (perpendicular to the plane of incidence) of a light beam, i.e., transverse beam shift. Introducing dynamically tunable PSHE into post-fabricated systems has great potential for the new type of photonic devices and its tuning range can be manipulated with different reconfigurable methods. Most of these methods are based on modifying the refractive index of bulk or interface materials. However, the perturbation on the refractive index is usually small, leading to difficulty in enhancing PSHE. Fortunately, the changes in the refractive index of Vanadium Dioxide (VO2) with insulating-metallic phase transition can be larger in several orders than that of other materials, making it possible for enhancing PSHE to have greater tuning range. Here, to explore the dynamically tunable PSHE based on the insulating-metallic phase transition of VO2, the transverse beam shift (as an indicator of PSHE) was calculated with a full wave theory at a wavelength of 1550 nm in a layered structure. Without a gold layer, only the PSHE of the H-polarized beam shows significant tunability in the insulating-metallic phase transition of VO2. With the Au layer, the PSHE of the H- and V-polarized beam is enhanced around the Brewster and Brewster-like (originating from the destructive interference between the nanosized layers) angle, respectively. For H- and V-polarized beams, the tuning range of PSHE is mainly determined by the insulating phase of VO2 and can be enhanced with the Au layer. Finally, as an example, the enhanced tuning range makes the output of a two-digit binary code conversion based on PSHE easier to recognize. These results offer us possible ways to control the tuning range of PSHE in post-fabricated systems and provide more potential for new applications.

A review of the preparation, properties and applications of VO2 thin films with the reversible phase transition

The reversible phase transition of vanadium dioxide under thermal, electrical, and optical stimuli is the enabling concept for the functioning of smart materials and is the basis for the development of various device materials such as optical, electrical, thermal, and mechanical devices based on VO2 on rigid and flexible platforms. The phase transition temperature of VO2 near room temperature is considered an excellent choice and a potential candidate to replace traditional materials in a variety of applications. There is a growing interest in VO2 applications for a wide range of devices, and the use of VO2’s structure to manipulate and explore the functions of various application devices, as well as the modification of VO2 structures to improve performance in a variety of materials, can lead to extremely exciting innovations. A lot of effort has been put into the challenges of practical production and practical application, and it is necessary to find an industrially feasible manufacturing method for the preparation of VO2 films, which is the basis for the practical application of VO2-based equipment. Based on this background, we first briefly describe the structure of VO2, the phase transition mechanisms involved, and the factors and other properties induced by the phase transition of VO2. Then, the current status and advantages and disadvantages of VO2 thin film preparation technologies are introduced in detail, including pulsed laser deposition (PLD), magnetron sputtering, the sol-gel method, and chemical vapour deposition (CVD). In addition, we propose three strategies to improve the performance of VO2 thin films, including element doping, multi-layer composites, and surface structure. We also discussed the different applications of VO2 under thermal, electrical, and light stimulation, as well as the development trends and future challenges of VO2 thin films.

Switchable multiple quasibound states in the continuum based on the phase transition of vanadium dioxide

Resonant dielectric nanostructures have achieved significant advancements in the manipulation of light at the nanoscale. Particularly, bound states in the continuum (BICs) based on dielectric metasurfaces have greatly enhanced the intensity of light–matter interaction. However, most BICs in dielectric metasurfaces are fixed in their functionality once they are made. In this study, we present the development of switchable multiple quasi-BICs by combining dielectric nanostructures with vanadium dioxide. The resulting hybrid dielectric metasurface can support three types of BICs with different multipole origins for vanadium dioxide in the insulating phase. By introducing structural asymmetry through width adjustment, one quasi-BIC with a longitudinal toroidal dipole characteristic is excited under x-polarized incidence. Further, tuning the width allows for the generation of two additional quasi-BICs with distinct electromagnetic sources under y-polarized incidence. Additionally, the hybrid dielectric metasurface also supports a high-Q transverse toroidal dipole mode. Moreover, all quasi-BICs and toroidal dipole modes can be turned off when vanadium dioxide transitions into the metallic phase. The switchable multiple quasi-BICs hold promise for applications in optical modulators, tunable harmonic generation, and biosensors.

Tunable bandwidth terahertz perfect absorption device based on vanadium dioxide phase transition control.

Utilizing the phase transition principle of VO2, this paper presents a tunable ultra-wideband terahertz perfect absorption device with simple structure and tunability. The proposed broadband terahertz perfect absorption device is a three-layer structure with a metal reflective layer, a silicon dioxide dielectric layer and a VO2 layer from bottom to top. It was found that the terahertz perfect absorption device's absorption could be dynamically adjusted from 1.2% to 99.9% when changing from an insulated to a metallic state. With the VO2 in the metallic state, the terahertz perfect absorption device has an absorption efficiency of more than 90% in 4.00 to 10.08 THz's ultra-broadband range and near-perfect absorption is achieved in the ranges of 4.71 THz to 5.16 THz and 7.74 THz to 8.06 THz. To explain the working principle of this terahertz perfect absorption device, this paper utilizes wave interference's principle, theory of impedance matching and electric field analysis. Compared to previously reported terahertz metamaterial devices, the vanadium dioxide device proposed in this paper is significantly optimized in terms of tunable range and absorption bandwidth. In addition, the terahertz perfect absorption device is polarization insensitive and maintains good absorptivity over a wide-angle incidence range. This tunable ultra-wideband terahertz perfect absorption device could have applications in the fields of modulation, stealth devices, and thermal emission devices.

Deep Learning-Based Metasurface Design for Smart Cooling of Spacecraft

A reconfigurable metasurface constitutes an important block of future adaptive and smart nanophotonic applications, such as adaptive cooling in spacecraft. In this paper, we introduce a new modeling approach for the fast design of tunable and reconfigurable metasurface structures using a convolutional deep learning network. The metasurface structure is modeled as a multilayer image tensor to model material properties as image maps. We avoid the dimensionality mismatch problem using the operating wavelength as an input to the network. As a case study, we model the response of a reconfigurable absorber that employs the phase transition of vanadium dioxide in the mid-infrared spectrum. The feed-forward model is used as a surrogate model and is subsequently employed within a pattern search optimization process to design a passive adaptive cooling surface leveraging the phase transition of vanadium dioxide. The results indicate that our model delivers an accurate prediction of the metasurface response using a relatively small training dataset. The proposed patterned vanadium dioxide metasurface achieved a 28% saving in coating thickness compared to the literature while maintaining reasonable emissivity contrast at 0.43. Moreover, our design approach was able to overcome the non-uniqueness problem by generating multiple patterns that satisfy the design objectives. The proposed adaptive metasurface can potentially serve as a core block for passive spacecraft cooling applications. We also believe that our design approach can be extended to cover a wider range of applications.

Wideband multimode smart modulator based on phase change materials

Optical components with switchable optical properties have garnered significant attention due to their wide range of potential applications in the fields of optical detection, radiative cooling, and energy conservation, etc. Most modulators focus on modulating a single parameter within a narrow spectral range, which often falls short of meeting the increasing demands of advanced photonic systems. In this study, we introduce a smart modulator capable of wideband modulation across three modes: transmission, absorption, and reflection. This modulation is triggered by the temperature-dependent phase transition of Vanadium dioxide (VO2) and In3SbTe2 (IST). We optimized the optical properties of the smart modulator using a combination of the Rigorous Coupled Wave Analysis method and Genetic Algorithm. As a result, we achieved average transmissivity, absorptivity, and reflectivity values of 0.785, 0.812, and 0.798, respectively, across the spectral range of 2.5 to 15 µm for each corresponding mode. Importantly, the multimode modulation performance remains excellent even at large incident angles. Furthermore, we demonstrate the exceptional performance of the smart modulator in practical applications, taking thermal fuses as an example. This showcases its effectiveness in thermal protection and modulation. The development of such wideband multimode smart modulators holds the potential to expedite the creation of compact, efficient, and multifunctional optical systems.

Dirac semimetal-assisted near-field radiative thermal rectifier and thermostat based on phase transition of vanadium dioxide.

The near-field thermal radiation has broad application prospects in micro-nano-scale thermal management technology. In this paper, we report the Dirac semimetal-assisted (AlCuFe quasicrystal) near-field radiative thermal rectifier (DSTR) and thermostat (DST), respectively. The DSTR is made of a Dirac semimetal-covered vanadium dioxide (VO2) plate and silicon dioxide (SiO2) plate separated by a vacuum gap. The left and right sides of DST are consisted of the SiO2 covered with Dirac semimetal, and the intermediate plate is the VO2. The strong coupling of the surface electromagnetic modes between the Dirac semimetal, SiO2, and insulating VO2 leads to enhance near-field radiative transfer. In the DSTR, the net radiative heat flux of VO2 in the insulating state is much larger than that in metallic state. When the vacuum gap distance d=100 nm, Fermi level EF=0.20 eV, and film thickness t=12 nm, the global rectification factor of DSTR is 3.5, which is 50% higher than that of structure without Dirac semimetal. In the DST, the equilibrium temperature of the VO2 can be controlled accurately to achieve the switching between the metallic and insulating state of VO2. When the vacuum gap distance d=60 nm, intermediate plate thickness δ=30 nm, and film thickness t=2 nm, with the modulation of Fermi level between 0.05-0.15 eV, the equilibrium temperature of VO2 can be controlled between 325-371 K. In brief, when the crystalline state of VO2 changes between the insulating and metallic state with temperature, the active regulation of near-field thermal radiation can be realized in both two-body and three-body parallel plate structure. This work will pave a way to further improve performance of near-field radiative thermal management and modulation.

Reducing phase transition temperature of vanadium dioxide by ascorbic acid

The phase transition of vanadium dioxide brings huge change in its optical property, which is well used in thermochromic window, fixed-temperature heat sensor, laser protection and other fields. Tunable phase transition temperature is one key for its wide applications. In this paper we verified a new simple method to reduce phase transition temperature. A coordination effect of ascorbic acid on VO2 powder reduces its phase transition temperature to about 32 °C. This simple method offers a new efficient option to deal with VO2, which may dramatically promote the applications of VO2.

T-shaped tunable infrared optical switch based on vanadium dioxide with dual-wavelength channels

A T-shaped tunable infrared optical switch based on a plasmonic structure composed of metal nanorods and vanadium dioxide film is proposed. The dynamic adjustment strategy based on the insulator–metal transition of vanadium dioxide and polarization-sensitive properties of the switch is thoroughly investigated to achieve the modulation of the wavelength and spectral reflectance intensity. Benefiting from the phase transition of vanadium dioxide, the optical switch can achieve two switching modes of ON and OFF states for both TE and TM polarizations of the incident light. Simulation results performed by finite-difference time-domain software show that the modulation depth of the switch can reach up to 85% at the resonance wavelength of 4270 nm under TM incident light. While the switch is illuminated with TE incident light, the modulation depth of the switch can reach 73% at the resonance wavelength of 2643 nm. In addition, when the polarizing angle of the incident light varies from 0 to 90°, the intensity of the spectral reflectance of the switch monotonically decreases at the wavelength of 4270 nm. Meanwhile, the spectral reflectance monotonically increases at the wavelength of 2643 nm. Moreover, the resonance wavelength of the optical switch can be tuned by altering the length of the metal nanorods. Those dynamic adjustment approaches will provide potential applications in optical modulation and solar photovoltaic fields.

Electrically controllable optical switch metasurface based on vanadium dioxide.

We report a voltage-tunable reflective gold wire grid metasurface on vanadium dioxide thin film, which consists of a metal-insulator-metal (MIM) structure. We excite surface plasmon polariton (SPP) modes on the gold surface by fabricating a one-dimensional structured gold wire grid. Joule heating of laser-induced graphene (LIG) can be controlled by the voltage at the bottom, allowing vanadium dioxide in the structure to complete the transition from the insulating state to the metallic state. The phase transition of vanadium dioxide strongly disrupts the plasmon modes excited by the gold wire grid above, thereby realizing a huge change in the reflection spectrum. This acts as a tunable metasurface optical switch with a maximum modulation depth (MD) of over 20 dB. We provide a more effective and simple method for creating tunable metasurfaces in the near-infrared band, which can allow metasurfaces to have wider applications in optical signal processing, optical storage, and holography.

SURFACE PLASMON-POLARITONS IN THE VO<sub>2</sub>-DIELECTRIC-METASURFACE STRUCTURE BASED ON GRAPHENE IN AN EXTERNAL MAGNETIC FIELD

In this paper presents the results of a study of the behavior of surface plasmon polaritons in the layered structure of VO2–SiO2-graphene-based hyperbolic metasurface under the influence of an external magnetic field before and at the beginning of the phase transition of vanadium dioxide. As a result of calculations, it is shown how the Isofrequency contour of surface plasmons changes taking into account the different direction of the external magnetic field. It is also shown how an external magnetic field affects the direction of static magnetization caused by the inverse Faraday effect. This work can offer additional ways to control the behavior of surface plasmons, as well as become the basis for the study of new self-adjusting structures.

Highly Tunable Negative Differential Resistance Device Based on Insulator-to-Metal Phase Transition of Vanadium Dioxide.

Negative differential resistance (NDR) based on the band-to-band tunneling (BTBT) mechanism has recently shown great potential in improving the performance of various electronic devices. However, the applicability of conventional BTBT-based NDR devices is restricted by their insufficient performance due to the limitations of the NDR mechanism. In this study, we develop an insulator-to-metal phase transition (IMT)-based NDR device that exploits the abrupt resistive switching of vanadium dioxide (VO2) to achieve a high peak-to-valley current ratio (PVCR) and peak current density (Jpeak) as well as controllable peak and valley voltages (Vpeak/valley). When a phase transition is induced in VO2, the effective voltage bias on the two-dimensional channel is decreased by the reduction in the VO2 resistance. Accordingly, the effective voltage adjustment induced by the IMT results in an abrupt NDR. This NDR mechanism based on the abrupt IMT results in a maximum PVCR of 71.1 through its gate voltage and VO2 threshold voltage tunability characteristics. Moreover, Vpeak/valley is easily modulated by controlling the length of VO2. In addition, a maximum Jpeak of 1.6 × 106 A/m2 is achieved through light-tunable characteristics. The proposed IMT-based NDR device is expected to contribute to the development of various NDR devices for next-generation electronics.

A comparative study uncovering the different effect of Nb, Mo and W dopants on phase transition of vanadium dioxide

Vanadium dioxide is a promising material for energy-saving and smart switching applications due to its reversible metal-to-insulator transition (MIT) accompanied by swift changes in electrical and optical properties. However, its deployment in practical applications is utterly restricted due to its high MIT temperature (∼ 68Co) and vague MIT mechanism. Although the MIT temperature can be reduced via high valence cations doping, the cause of diverse effects on MIT temperature by Nb, Mo, and W doping was not well defined. Here, we conducted a systematic study of Nb, Mo, and W dopants in the VO2 host material to understand the nature of the MIT and the contrast in reducing MIT temperature due to these dopants. Poor hybridization of Nb-4d and V-3d states and enhanced Nb–O ionic character due lower electronegativity of Nb was observed in both M1 and R phases which softened V–V interaction. On the other hand, W with high electronegativity was found better than Nb and Mo in contributing localized electrons via strong hybridization of V-3d and dopant states, effecting thermochromic properties strongly. The fundamentals behind the diverse effect on MIT temperature of studied dopants have also been explained. These findings expose the MIT mechanism in VO2 and help to modulate its properties for thermochromic windows and smart switching applications.