Perpendicular Devices Research Articles

Fabrication of a new highly-symmetrical, in-plane accelerometer structure by anisotropic etching of (100) silicon

In this paper, we present a silicon bulk-microfabrication method which helps to overcome simultaneously several limitations of multi-axis micro-accelerometers. The method demonstrates an orginal solution to the building of a symmetrical structure by using double-side wet etching. This is a low-cost alternative to existing techniques for the fabrication of highly-symmetrical, single crystal silicon structures. The proposed approach provides low mechanical cross-sensitivities as well as the possibility of a batch fabrication process of the whole three-dimensional device without loss of accuracy due to assembly operation. For the fabrication of thin suspended beams with vertical sidewalls, a non-conventional alignment of from the wafer flat was used. This alignment allows one to fabricate two perpendicular devices on one wafer in the same etching step. The etching was performed with a simple standard wet etching process in a KOH solution. A number of structures were fabricated to demonstrate the feasibility of this method. Aspect ratios (beam height over beam thickness) of over 35 were easily achieved. Undercut directions were determined and design rules for the mask layout were established. To describe the mechanical behaviour of the fabricated structure, an analytical model was implemented and a finite-element simulation was performed. First measurements of the seismic mass displacement were performed with an optical comparator, and they agree with theoretically obtained results. The new design offers the possibility of a two-axis accelerometer system on one wafer, consisting of two sensor elements rotated by . A three-axis monolithic accelerometer system with intrinsic perpendicular alignment due to the rectangular symmetry of the (100) planes can be realized, by including a third sensor element sensitive to vertical accelerations.