Device Performance Research Articles

Effects of TMIn Flow Rate During Quantum Barrier Growth on Multi-quantum Well Material Properties and Device Performance in GaN-Based Laser Diodes

Effects of TMIn Flow Rate During Quantum Barrier Growth on Multi-quantum Well Material Properties and Device Performance in GaN-Based Laser Diodes

Modulating Aggregation Behavior by Ternary Strategies for Efficient and Stable Thick-Film Organic Solar Cells.

Functional third components targeted to improve a specific property of organic solar cells is an effective strategy. However, introducing a third component to simultaneously improve efficiency and stability and achieve good performance in thick-film devices has rarely been reported. Herein, low diffusion third components IDCN and ID2CN are reported to achieve a power conversion efficiency (PCE)of 18.08% and a high short-circuit current (J SC)of 27.82mAcm-2, one of the highest values based on PM6:Y6. They increase light harvesting in the range of 400-500nm while enhancing energy transfer via Förster resonance energy transfer (FRET). A tightly ordered molecular arrangement is achieved by modulating the preaggregation and film formation kinetics of Y6, which enhance exciton dissociation and charge transport. Moreover, the low-diffusion third component can effectively restrict the diffusion of Y6 to improve the morphology stability, and the T90 lifetime is increased from 689 to 1545h. In 300nm thick-film devices, PM6:ID2CN:Y6 achieves a PCE of 15.01%, much higher than PM6:Y6's 12.83%, demonstrating the great potential of ID2CN in thick-film devices.

Optimization of Selenization Condition for Efficiency CIGSe Solar Cells Based on Postselenization of CuInGa Precursors.

The degree of selenization of the CIGSe absorbers is controlled by regulating the parameters of the selenization reaction. The structure, element distribution, phase composition of the CIGSe absorbers, and the performances of the solar cells with different selenization degrees are studied. Insufficient selenization will lead to residual Cu2Se phase on the surface and insufficient Na diffusion, which will affect the VCu+ on the surface and the recombination at the front interface. However, excessive selenization will make the MoSe2 layer thicken at the back interface of the CIGSe/Mo, resulting in the increase of the series resistance and the enhancement of the recombination at the back interface. The appropriate selenization degree is conducive to inhibiting the recombination at the front and back interfaces. Improved device performances can be obtained by optimizing the selenization degree of the absorbers.

Imaging Locally Inhomogeneous Properties of Metal Halide Perovskites.

Metal halide perovskites (MHPs) are a perfect example of state-of-the-art photovoltaic materials whose compositional and structural diversity,coupled with utilization of low-temperature processing, can undesirably result in spatially inhomogeneous properties that locally vary within the material. This complexity of MHPs requires sensitive imaging characterization methods at the microscopic level to gauge the impact of such inhomogeneities on device performance and to formulate mitigation strategies. This review consolidates properties of MHPs that are susceptible to local variations and highlights appropriate imaging techniques that can be employed to map them. Inhomogeneities in morphology, emission, electrical response, and chemical composition of MHP thin films are specifically considered, and possible microscopic techniques for their visualization are reviewed. For each type of microscopy, a short discussion about spatial resolution, sample requirements, advantages, and limitations is provided, thus leaving the reader with a guide of available imaging characterization tools to evaluate inhomogeneities of their MHPs.

Precursor Ink Engineering to Implement Vacuum Extraction Method for Scalable Production of Perovskite Solar Cells.

Engineering perovskite precursor ink to widen the processing window is crucial to obtaining uniform, compact, and pinhole-free perovskite films at scale using industrially relevant solution coating techniques. Here, we introduce a ternary solvent system and systematically investigate the impacts of coordinating solvents, N-methyl-2-pyrrolidone (NMP) and N,N'-dimethylpropyleneurea (DMPU), on the physical properties of the slot-die-coated perovskite films and on the corresponding device performance. Tailoring NMP and DMPU concentrations in the precursor ink allows us to control the perovskite intermediate phase formation and widen the processing window, enabling the reproducible production of perovskite films with high photoelectrical quality at scale. Using the optimized precursor ink, we demonstrate slot-die-coated perovskite minimodules with power conversion efficiencies of 19 and 16% on 56 and 100 cm2 substrates, respectively.

Fabrication and Fluorescence Analysis of Rhodamine Dyes in Polycarbonate Serpentine Microfluidic System.

The synthesis of rhodamine dyes (R6G and R1010) and their fluorescence characterization within polymer-based microfluidics, offers an exciting and novel approach in materials science and chemical analysis. This work investigates the emission of polycarbonate substrates (PC) by UV-visible. The ablation threshold (16mj.sec-1) of PC at 193nm wavelength after that ablation process continued to produce microfluidic serpentine channels on PC by using G-Code. The fluorescence characteristics of Rhodamine 6G and Rhodamine 101 are investigated. Absorption and emission at peak wavelength were analyzed against R6G and R101 concentrations. Furthermore, the refractive indices of both R6G and R101 vis concentrations are examined. As a result at low concentrations, there was the highest overlapping, and at high concentrations, there was the smallest overlapping. R101 showed better photostability and a more consistent diffusion, whereas R6G had a faster diffusion and stronger fluorescence intensity. These differences were caused by the different molecular structures of the dyes and their interactions with the PCmicrochannel. Incorporating R6G and R101 dyes into a polycarbonate PC microfluidic chip would enhances both the resolution and sensitivity of fluorescence detection. The limited microfluidic setup facilitates ultra-high-resolution investigation and minimizing sample volumes, making it suitable for applications requiring precise measurements. The innovation relies on the utilization of the unique fluorescence characteristics of R6G (Rhodamine 6G) and R101 (Rhodamine 101) dyes to enhance the performance of polycarbonate microfluidic devices. R6G has high fluorescence quantum yield and stability, rendering it suitable for sensitive detection, while R101 offers superior brightness and improved resistance to photobleaching. Incorporation of these dyes into polymeric microfluidics improves sensitivity and facilitates real-time, dynamic sample analysis. This method offers a portable, economical solution with high-throughput capabilities, greatly enhancing both analytical and process accuracy across a variety of applications.

A Two-Step Dry Etching Model for Non-Uniform Etching Profile in Gate-All-Around Field-Effect Transistor Manufacturing.

The Gate-All-Around Field-Effect Transistor (GAAFET) is proposed as a successor to Fin Field-Effect Transistor (FinFET) technology to increase channel length and improve the device performance. The GAAFET features a complex multilayer structure, which complicates the manufacturing process. One of the most critical steps in GAAFET fabrication is the selective lateral etching of the SiGe layers, essential for forming the inner-spacer. Industry commonly encounters a non-uniform etching profile during this step. In this paper, a continuous two-step dry etching model is proposed to investigate the mechanism behind the formation of the non-uniform profiles. The model consists of four modules: anisotropic etching simulation, Ge atom diffusion simulation, Si/SiGe etch selectivity calculation and SiGe selective etching simulation. By calibrating and verifying this model with experimental data, the edge rounding and gradient etching rates along the sidewall surface are successfully simulated. Based on further examination of the influence of chamber pressure on the profile using this model, the inner-spacer shape is improved experimentally by appropriately reducing the chamber pressure. This work aims to provide valuable insights for etching process recipes in advanced GAAFETs manufacturing.

Mechanisms of Controllable Growth and Ohmic Contact of Two-Dimensional Molybdenum Disulfide: Insight from Atomistic Simulations.

ConspectusTwo-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs), in particular molybdenum disulfide (MoS2), have recently attracted huge interest due to their proper bandgap, high mobility at 2D limit, and easy-to-integrate planar structure, which are very promising for extending Moore's law in postsilicon electronics technology. Great effort has been devoted toward such a goal since the demonstration of protype MoS2 devices with high room-temperature on/off current ratios, ultralow standby power consumption, and atomic level scaling capacity down to sub-1-nm technology node. However, there are still several key challenges that need to be addressed prior to the real application of MoS2-based electronics technology. The controllable growth of wafer-scale single-crystal MoS2 on industry-compatible insulating substrates is the prerequisite of application while the currently synthesized MoS2 films mostly are polycrystalline with limited sizes of single-crystal domains and may involve metal substrates. The precise layer-control is also very important for MoS2 growth since its electronic properties are layer-dependent, whereas the layer-by-layer growth of multilayer MoS2 dominated by the van der Waals (vdW) epitaxy leads to poor thickness uniformity and noncontinuously distributed domains. High density up to 1013 cm-2 of sulfur vacancies (SVs) in grown MoS2 can cause unfavorable carrier scatting and electronic properties variations and will inevitably disturb the device performance. The dangling-bond-free surface of MoS2 gives rise to an inherent vdW gap at metal-semiconductor (M-S) contact, which leads to high electrical resistance and poor current-delivery capability at the contact interface and thereby substantially limits the performances of MoS2 devices.In this Account, we briefly review recent experimental and theoretical attempts for addressing the aforementioned challenges and present our own insights from atomistic simulations. We theoretically revealed the vital role of substrate steps for guiding unidirectional nucleation of monolayer MoS2 and uniform nucleation and edge-aligned growth of bilayer MoS2 by advanced simulations. The established thermodynamic mechanisms have successfully directed the experimental works on the controllable growth of 2 in. single-crystal monolayer and centimeter-scale uniform bilayer MoS2. The postgrowth repair mechanism of SV defect in MoS2 via thiol chemistry treatment has been theoretically explored with the consideration of side reaction of surface functionalization to help experimentally reduce SV defect density by 75%. Beyond the atomic level understanding, theoretical simulations proposed the electronic states hybridization mechanism across the semimetal-MoS2 vdW interface, thereby guiding experimental effort for realizing Ohmic contact at the MoS2-Sb(0112) vdW interface with record-low contact resistance.These advances provide a sound basis with an atomic-level understanding for addressing the related issues. However, there are still notable gaps in terms of system size and time scale of dynamics between atomistic simulations and experimental observations for the studies of MoS2 growth and interfaces. The combination of multiscale simulations and artificial intelligence technology is expected to narrow these gaps and provide a more insightful understanding of the controllable growth and interfacial properties modulation of MoS2. We conclude the Account with the standing challenges and outlook on future research directions from the theoretical perspective.

Synergistic Modulation of Sn2+ Oxidation and Perovskite Crystallization Induced by 4-Hydroxypyridine for Stable Lead-Free Solar Cells.

Tin perovskites present promising alternatives to lead perovskites, offering comparable optoelectronic properties alongside environmentally friendly characteristics. However, the rapid crystallization and easy oxidation of Sn2+ lead to poor film quality, further constraining the device performance. Here, 4-hydroxypyridine (4-HP) is introduced into the tin perovskite precursor for fabrication of high-quality tin perovskite films. 4-HP could modulate the colloidal size of prenucleation perovskite clusters in the precursor, thus inducing fast nucleation and retarding the crystal growth rate of tin perovskite through the formation of chemical interaction between nitrogen of pyridine and Sn2+ ions. Furthermore, the hydroxyl group on the pyridine ring contributes to suppressing the oxidation of Sn2+. As a result, the power conversion efficiency (PCE) of the devices based on 4-HP increases up to 11.3%. The stability of the unencapsulated devices shows significant improvement, retaining 100% of their initial PCEs after 2000 h of storage in N2 with 50-100 ppm of O2. This research presents a novel approach to the synchronized regulation of tin perovskite crystallization and the suppression of Sn2+ oxidation.

Seismic Vibration Control of Multiple-Degrees-of-Freedom Steel Structures Through Optimal Impact Mass Dampers

ABSTRACT A novel device based on the energy transfer concept, named impact mass damper (IMD), is presented for the mitigation of large structural vibrations due to horizontal seismic excitations. To achieve the optimal performance of the nonlinear device, coupled with different standard steel buildings, an optimization procedure is set both employing the design of experiments (DOEs) method and the Kriging surrogate modelling. Concerning the seismic input, site-specific ground motions and record-to-record variability are taken into account, in agreement with the new European standards. The validated performance of the IMD device demonstrates its benefits, in particular for short-period steel buildings.

Ultralow Contact Thermal Resistance between Bismuth Selenide Nanoribbons Achieved by Current-Induced Annealing.

Thermal resistance at interfaces/contacts stands as a persistent and increasingly critical issue, which hinders ultimate scaling and the performance of electronic devices. Compared to the extensive research on contact electrical resistance, contact thermal resistance and its mitigation strategies have received relatively less attention. Here, we report on an effective, in situ, and energy-efficient approach for enhancing thermal transport through the contact between semiconducting nanoribbons. By applying microampere-level electrical currents to the contact between Bi2Se3 nanoribbons, we demonstrate that the contact thermal resistance between two nanoribbon segments is reduced dramatically by a factor of 4, rendering the total thermal resistance of two ribbon segments with a contact approximately the same as that of the corresponding single continuous nanoribbon of the same length. Analysis suggests that the ultralow contact thermal resistance is due to enhanced phonon transmission as a result of enhanced adhesion energy at the contact, with marginal contributions from direct electron-phonon coupling, even for ohmic contacts. Our work introduces a broadly applicable electrical treatment approach to various contacts between conducting and semiconducting materials, which has important implications for the design and operation of nanoelectronic devices and energy converters.

Regulating V2O5 Layer Spacing by a Polyaniline Molecule Chain to Improve Electrochemical Performance in Salinity Gradient Energy Conversion.

Salinity gradient energy is a chemical potential energy between two solutions with different ionic concentrations, which is also an ocean energy at the junction of rivers and seas. In our original work, the device "activated carbon//(0.083 M Na2SO4, 0.5 M Na2SO4)//vanadium pentoxide" for the conversion of salinity gradient energy was designed, and the conversion value of 6.29 J g-1 was obtained. However, the low specific surface area of the original V2O5 inevitably resulted in limited active sites and slow ionic transport rates, and the inherent lower conductivity and narrower layer spacing of the original V2O5 also resulted in poor electrode kinetic performance and cycle stability, hindering its practical application. To solve the above problems, the present work provides a strategy of using polyaniline (PANI) molecule chain intercalation to regulate the layer spacing of the original V2O5, and through the expansion and traction of the layer spacing, the composite PANI/V2O5 (PVO) with high specific surface area is prepared and used as an anode material for electrochemical conversion of salinity gradient energy application. The significantly increased layer spacing of the crystal plane (001) corresponding to the original V2O5 was confirmed with the PANI by the hydrogen bonding and the van der Waals force. The high specific surface area of the composite provides more electrochemical active sites to realize a fast Na+ migration rate and high specific capacitance. Meanwhile, the inserted PANI molecule chain, which acts not only as a pillar enlarging the Na+ diffusion channel but also as an anchor locking the gap between V2O5 bilayers, improves the structural stability of the V2O5 electrode during the electrochemical conversion process. The proposed insertion strategy for the conductive polymer PANI has created a new way to improve the cycle stability performance of the salinity gradient energy conversion device.

Design and Application Prototype of soft starting Three-Phase AC Motor by Using Analog Electronics Control for Teaching Aids of Power Electronics Practice

In general, palm oil processing factories, from fresh fruit bunches to Crude Palm Oil, require three-phase electric motors to drive or rotate it. The problems that often arise when using three-phase electric motors simultaneously in large numbers will result in very large surges in the electric current, which can affect the performance of electronic devices. To overcome this problem, a prototype of a three-phase AC voltage regulator circuit was made by adjusting the SCR triggering delay angle using an analog electronics equipment control that can be used for three-phase motor soft start applications in a palm oil factory. This prototype will be used as a learning tool for the practical for Aceh Polytechnic students for power electronics courses. This system is built with a method where the three-phase source is first lowered using a transformer arranged in a star on the primary and secondary sides, then each voltage is compared to the ground using an IC LM324, which aims to produce pulses wave. This pulse then connected to a triangular wave generator circuit, this triangular wave is then compared with the DC source voltage from the potentiometer, which aims to regulate the SCR triggering angle of SCR via MOC3063 driver, where the load used is resistive and connected in a star. The measurement using an oscilloscope and observing the change of triggering angle for several variations of each phase, the different Vrms voltage between measurements compared to mathematical analysis influenced by several factors, including, the transformer is made of three transformers that not identically, the electronic components used are not in ideal condition, and observations on the oscilloscope are carried out visually using the eye and manually adjusting the potentiometer rotation so that the level of measurement accuracy between one person and another will produce different values.

Suppressed Thermal Quenching via Tetrafluoroborate-Induced Surface Reconstruction of CsPbBr3 Nanocrystals for Efficient Perovskite Light-Emitting Diodes.

Although metal-halide perovskite nanocrystals (NCs) have garnered significant attention for optoelectronic applications, the presence of electrically insulating organic ligands in CsPbBr3 NCs hinders efficient charge injection and transportation in light-emitting diodes (LEDs). A common approach to address this issue involves ligand exchange with shorter ligands and precise control of the surface ligand density through additional purification steps. Nevertheless, the practical application of these methods has been hindered by their poor structural integrity and high surface-defect density, which remain a challenge. Our investigation reveals that NOBF4 treatment effectively replaces native ligands with BF4- anions, in which BF4- anions are readily coordinated with the positively charged CsPbBr3 surface metal centers, thereby improving the photoluminescence quantum yield (PLQY) and thermal stability. In particular, the presence of BF4- anions coordinated at CsPbBr3 surfaces efficiently suppresses the pathway of excitons toward thermally activated nonradiative recombination, leading to minimal thermal quenching and superior device performance in green-emitting PeLEDs. Notably, PeLEDs based on CsPbBr3 NCs with the reconstructed surface via NOBF4 treatment exhibit an improved current efficiency of 31.12 cd/A and an external quantum efficiency of 11.24%, increased by 2.8 times compared to that of the pristine sample, indicating the enhanced hole-electron injection and transport into the CsPbBr3 NCs. Therefore, our results highlight the potential of NOBF4 as a versatile reagent for the ligand exchange and surface passivation of CsPbBr3 NCs, thereby offering promising prospects for the development of stable, high-performance PeLEDs.

Inhibiting the current spikes within the channel layer of LiCoO2-based three-terminal synaptic transistors

Synaptic transistors, which emulate the behavior of biological synapses, play a vital role in information processing and storage in neuromorphic systems. However, the occurrence of excessive current spikes during the updating of synaptic weight poses challenges to the stability, accuracy, and power consumption of synaptic transistors. In this work, we experimentally investigate the main factors for the generation of current spikes in the three-terminal synaptic transistors that use LiCoO2 (LCO), a mixed ionic-electronic conductor, as the channel layer. Kelvin probe force microscopy and impedance testing results reveal that ion migration and adsorption at the drain–source-channel interface cause the current spikes that compromise the device's performance. By controlling the crystal orientation of the LCO channel layer to impede the in-plane migration of lithium ions, we show that the LCO channel layer with the (104) preferred orientation can effectively suppress both the peak current and power consumption in the synaptic transistors. Our study provides a unique insight into controlling the crystallographic orientation for the design of high-speed, high-robustness, and low-power consumption nano-memristor devices.

A Simulation Study for Enhancing the Performance of Luminescent Organic Transistor Using Reduced Voltage and Hole Blocking Layer

Abstract Eco-friendly and biodegradable technology forms the basis of organic electronics. A luminescent organic transistor (LOT) is a device created using this technology, which is capable of emission of light and acting as switch functions in a single unit. This research seeks to develop and model a nonplanar contact heterostructure-based LOT by employing the defect density of states (DOS) to accurately simulate the amorphous nature of organic semiconductors. This study evaluates two high-k dielectric materials, hafnium oxide (HfO2) and poly(vinylidene fluoride-trifluoroethylene)P(VDF-TrFe), to achieve low-voltage operation at (-10V). Furthermore, this study investigated the influence of a hole blocking material, 1,3,5-Tris(3-pyridyl-3-phenyl)benzene(TmPyPB), on device performance. Simulations revealed p-channel transistor characteristics with a maximum source-drain current of (-1.6 mA) and an on-off current ratio exceeding 104 for HfO2, compared to (-0.75 mA) and approximately 104 for P(VDF-TrFe). The model also demonstrated exceptional electrical properties, including a peak hole mobility of (1.96 cm2 v-1 s-1), a threshold voltage of (-0.85 V), and a sub-threshold voltage of 492 mV/dec in saturation. The recombination zone exhibited an electron concentration of 18.0 cm-3, a hole concentration of 19.3 cm-3, and a Langevin recombination rate of 24.7 cm-3s-1 near the drain electrode. This model serves as an ideal platform for testing newly developed molecules to enhance the performance of luminescent transistor.

Structural Modifications due to Bi-Doping in MAPbBr3 Single Crystals and Their Impact on Electronic Transport and Stability.

Doping strategy in lead halide perovskites is essential to enhance its optoelectrical properties and expand the potential applications. In this work, the mechanisms, for how dopants affect the overall structural, optical, electrical, and chemical properties and stability of lead halide perovskite materials, are investigated. This is done by specifically considering various bismuth (Bi)doping concentrations in MAPbBr3 single crystals grown using the inverse temperature crystallization method. The resultant doped single crystals exhibit a saturation point when Bi concentration exceeds 0.063% which is considered an optimum doping point. The highest thermal stability is also achieved at this doping concentration among the doped single crystals. This study clearly identifies how Bi doping affects the properties of MAPbBr3 and extends to consider stability, which has not been fully considered for MA-based perovskites previously. This will provide a clear understanding of evaluating doped perovskite materials for enhanced material properties, device performance, and stability.

One‐Step Room Temperature Synthesis of Printable Carbon Quantum Dots Ink for Visual Encryption and High‐Performance Photodetector

AbstractCarbon quantum dots (CQDs) have emerged as promising materials for optoelectronic applications and have garnered much interest as potential competitors to conventional inorganic or hybrid semiconductor quantum dots because of carbon's intrinsic merits of high stability, low cost, and environment‐friendliness. The ability of easy formulation of functional ink of CQDs is necessary for the development of industrial‐scale, reliable, inexpensive printing/coating processes, for its full exploitation in the ever‐growing class of applications in sensors, optoelectronics, and energy storage and conversion. Here a facile one‐step room‐temperature synthesis of printable, fluorescent CQD ink is demonstrated. The as‐synthesized fluorescent CQD ink is used for invisible fingerprint stamps, printing of micro‐patterns, and soft lithographic patterning with a resolution down to 1.5 µm. This functional CQD ink is also used to fabricate a high‐performance CQD‐ZnO heterojunction ultraviolet (UV) photodetector with a photo‐responsivity of 3.85 A W−1, detectivity of 6.78 × 1010 Jones, and an external quantum efficiency (EQE) of 15.3%. The enhanced device performance can be attributed to CQD's high photocurrent generation efficiency and rational combination of the asymmetric electrode materials. This work enables a high‐temperature stable CQD fluorescent ink synthesis method to fulfill the processing requirements of printing and soft lithographic patterning for visual encryption and optoelectronics.

Surface-Reconstructed InAs Colloidal Nanorod Quantum Dots for Efficient Deep-Shortwave Infrared Emission and Photodetection.

Shortwave infrared (SWIR) light emitters and detectors are crucial in numerous applications. Conventionally, SWIR devices rely on epitaxially grown narrow bandgap semiconductors, such as InGaAs, which are expensive to fabricate and difficult to integrate with silicon complementary metal-oxide-semiconductors (CMOS). Colloidal quantum dots (CQDs) have emerged as low-cost alternatives to epitaxially grown semiconductors, offering integration with CMOS through solution-processing methods. However, the predominant SWIR-active CQD systems rely on heavy-metal-containing compositions (PbS and HgTe), hindering the adoption of CQD SWIR technology. InAs CQDs are promising substitutes in SWIR applications. However, synthesizing SWIR-active InAs CQDs is challenging, often constraining them to the visible or near-infrared regions. To achieve SWIR bandgaps, large InAs CQDs are typically required; such CQDs are prone to having surface traps that quench photogenerated charge carriers, adversely affecting device performance. Here, we report a two-step synthesis of surface-passivated SWIR-active InAs/ZnSe core/shell colloidal nanorod quantum dots (CNQDs). These surface-passivated CNQDs are highly emissive and tunable over the entire technologically important region (1200-1800 nm) of the SWIR window with photoluminescence quantum yields as high as 60%. Using these SWIR-active InAs/ZnSe CNQDs, we demonstrated an SWIR-active InAs CQD photodetector, achieving a record high external quantum efficiency of ∼15% at ∼1450 nm and a low dark current of ∼10-2 mA/cm2.

Rational Design Dithieno[3,2-f:2',3'-h]quinoxaline-Based Polymers with Optimized Molecular Configuration and Charge Transfer for High-Performance All-Polymer Solar Cells.

Due to poor planarity and weak intermolecular interactions of acceptor units which have two-dimensional configuration, the development of related polymers is slow. In this work, we synthesized a dithieno[3,2-f:2',3'-h]quinoxaline-based unit substituted with fluorinated thiophene, which can effectively expand the area of the acceptor unit. Then, it paired with three different benzodithiophene-based donor units, and three new polymers of PQTF-BT, PQTF-BTCl and PQTF-DTCl were obtained. PQTF-BT with thiophene side chain exhibits appropriate aggregation and crystallization performance, and the PQTF-BT:PY-IT all-polymer solar cells exhibit high device efficiency of 15.54%. Meanwhile, PQTF-BTCl with chlorination strategy on thiophene side chain further enhances the open-circuit voltage of related devices. However, it has negative impact on the miscibility and charge transfer of the material, leading to a poor efficiency of 8.71% in the PQTF-BTCl:PY-IT device. To reinforce miscibility, PQTF-DTCl with expanded backbone planarity was further studied. However, the big dihedral angles of the donor side chains disrupted the effective stacking of the molecules, resulting in great recovery of device performance to 13.42%. This work provides research ideas for the design of polymers with two-dimensional configuration side chain and match selection of donor units.