Performance Of Silicon Solar Cells Research Articles

Influence of inverted pyramid texturization on front metallization and performance of crystalline silicon solar cells

The silicon surface texturing is an essential part for the fabrication of crystalline silicon solar cells to increase the conversion efficiency. By adjusting the etching texturing condition, inverted pyramid (IP) and upright pyramid (UP) texturization were prepared on crystalline silicon substrates for fabrication of PERC solar cells. The surface morphology not only affects the light trapping but also impacts electrode shading loss and front electrode contact interface. The IP texturization presents better anti-reflective performance due to more common light paths and narrower silver grids owing to less flow of Ag paste on concave blocked structure, both of which results in the higher short-circuit current density (Jsc). Yet in terms of front Ag/Si contact interface, the IP texturization causes more Ag crystallites and more surface recombination under the present condition suitable for UP texturization because of more edges on the upper part of IP, which leads to the lower open-circuit voltage (Voc). The final conversion efficiency of IP solar cells (23.61 %) is 0.06 % higher than that of UP solar cells (23.55 %). An improvement about 0.07 mA/cm2 of Jsc was achieved with IP samples and Voc has a decrease of 0.3 mV caused by the surface recombination on IP texturization. In summary, the structural characteristics of IP results in lower reflectivity and less electrode shading, while Ag/Si contact interface could be optimized by adjusting the processing condition, ultimately promising the higher efficiency.

Achieving effective performance of silicon solar cell through electrosprayed MgF2 antireflection coating

Solar cells technology will be one of the futuristic major resources for global energy demands. One of the major problems in energy harvesting using solar cells was reflection of incident light over solar cell surface. The present research work aims to synthesize the magnesium fluoride through sol-gel process which acts as antireflection layer for achieving better output performance. MgF2 films were deposited over solar cells at varying time periods of 60, 90, 120 and150 minutes through electrospraying technique. MgF2 electrosprayed solar cells were inspected for evaluating its structural, optical, electrical and morphological characteristics. The coated solar cells were analyzed under dark and light conditions. The precursor materials involved in sol-gel synthesis of MgF2 were magnesium chloride hexahydride, polyethylene glycol and hydrofluoric acid. From the I-V results, it is evident that performance of 120 minutes MgF2 coated solar cell exerts maximum performance of 19.38 % (open) and 19.41 % (controlled). MgF2 antireflective electrosprayed films were prominent materials for minimizing reflection and ensuring the maximum photon transmission into the coated surface especially in opto-electronic applications.

An investigation of the impact of nafion polymer on surface passivation and analysis of degradation in HIT solar cells for improvement performance

The effectiveness of Heterojunction with an intrinsic thin layer (HIT) solar cell is greatly improved by using Nafion polymer to passivate the surface and reduce carrier recombination processes. The enhancement of high-efficiency solar cells has garnered considerable interest in surface passivation as a potential substitute due to their exceptional electrical properties. There is little research on the optical and electrical characteristics of different levels of Nafion concentration. The HIT solar cells were treated with varying Nafion-passivation concentrations (2.5 wt %, 5 wt %, 10 wt %). The most significant performance improvement is at a concentration of 2.5 wt% after degradation for 8 h. The open-circuit voltage (Voc) climbed to 735.05 mV, and the fill factor (FF) increased at + 3.49 %, followed by the increase of power conversion energy (PCE) at + 0.96 %, both showing a considerable increase compared to a cell made from an unaffected cell. Due to its ability to boost silicon solar cell performance, a low Nafion concentration is preferred.

Influence of Supplementary Oxide Layer on Solar Cell Performance

The increasing use of solar energy for electricity production has led to a directly proportional growth in the production of solar cells. Photovoltaic (PV) performance of silicon solar cells can be improved by using more efficient technologies, optimizing processes, and changing behavior in order to reduce operational costs and greenhouse gas emissions. In order to propose solutions for commercial solar cell production with better performance, this article presents an experimental assessment on Supplementary Oxide Layers (SOLs) that are deposited on the surface of a solar cell absorber layer. SOLs are typically used to improve the performance of solar cells by passivating surface defects, reducing recombination losses, and improving the electrical contact between the absorber layer and the metal electrodes. The obtained solar cells are tested under natural sunlight conditions, following a variable dynamic electronic charge profile. The experimental results along with the corresponding I-V and P-V curves, are assessed according to the process parameters, the lighting parameters, and the dynamic load scenario. SOLs have been shown to improve the Power Conversion Efficiency (PCE) of solar cells considerably. The proposed method for increasing the energy efficiency of solar cells can be applied to any type of commercial solar cell and it is easy to implement at the industrial or research level by controlling process parameters. The integration of the whole process, i.e. development of precursor solutions, deposition of thin films, and testing of electrical properties is another contribution of the current study, along with its interdisciplinary character, which involves materials science, electronics, and software programming.

The effect of Te-based lead-free glass powder containing Ge and Ag+ on the contact formation and electrical performance of silicon solar cells

The Te-based glass powder exhibits distinctive characteristics such as a low melting temperature and high chemical stability, rendering it a focal point of research in the realm of glass powder applications for solar cells. In this investigation, a pioneering Ge-containing Te-based lead-free glass powder was synthesized, and the influence of GeO2 content on critical parameters such as glass transition temperature (Tg), high-temperature fluidity, high-temperature wettability, acid and alkali resistance, as well as the network structure of the glass, was systematically explored. At an optimal GeO2 content of 8%, the glass powder displayed the lowest Tg (437°C), accompanied by a subdued crystallization reaction. The high-temperature fluidity and wettability exhibited favorable characteristics, indicating that the inclusion of GeO2 in the glass powder resulted in an enhanced interface contact. Building upon this foundation, techniques to augment the Ag+ content within the glass powder were investigated, along with the interaction between Ag+ and the SiNx anti-reflection layer or silicon on the surface of crystalline silicon solar cells. It was discerned that the Ag+ content in the glass powder significantly influences the deposition of silver microcrystals on the surface of crystalline silicon, thereby impacting the contact resistance of the solar cell. Then influences the series resistance and photoelectric conversion efficiency of the solar cell.

Anisotropic etching behavior and topography formation mechanism of silicon solar cell surface textured by atmospheric plasma

Atmospheric plasma etching (APE) has been used to texture Si surfaces due to anisotropic material removal capability. Controlling features and size of the light-trapping structure are keys to improving the reflection performance of silicon (Si) solar cells, which need to fully understand the interfacial etching behavior and the microscopic topography formation mechanism of the Si surface. In this study, microwave plasma with a temperature below 100 °C is employed to investigate the dependence of microstructure evolution on the O/F atom ratios in plasma. The results show that as the O/F atom ratios increase, the microstructure of the Si surface changes from square opening pits to spherical opening pits. High-resolution transmission electron microscopy and x-ray photoelectron spectroscopy analyses indicate that the exciting F atoms dominate the orientation-selective etching process, causing the formation of square opening pits. The CFx and C2 radicals induce the generation of the Si interface reactive layer, resulting in the occurrence of amorphous layers and termination of the non ⟨111⟩-crystal face in APE. The exciting O atoms preferentially occupy the active site of Si surfaces, causing the isotropic etching and then the formation of spherical opening pits. In addition, the richer O atoms will weaken the anisotropic etching ability of F atoms, resulting in the etched surface trends’ flattening. The insight into anisotropic etching behavior and topography formation mechanism of the silicon surface textured by atmospheric plasma is valuable for developing a new texturing approach to silicon solar cells.

Enhancing performance of heterojunction silicon solar cells through atomic-layer-deposited MoOx hole contact and atomic-layer-deposited AlZnO layer

We present the performance enhancement of a heterojunction Si solar cell facilitated by incorporating an atomic-layer-deposited (ALD) MoOx hole contact layer and an ALD Al-doped ZnO (AZO) transparent conductive oxide (TCO). ALD MoOx thin films as a hole-selective contact layer instead of P+-doped amorphous Si in Si heterojunction solar cells, with subsequent growth of ALD AZO films grown on the MoOx layer preceding the indium-tin-oxide sputtering deposition. Integrating ALD MoOx hole-selective contact and ALD AZO TCO manifests an augmentation in the short-circuit current in heterojunction Si solar cells due to the heightened carrier transport and concurrent reduction in sputtering-induced damage. Consequently, the heterojunction Si solar cell employing the ALD MoOx film and ALD AZO layer yielded a 1.1 % increase in efficiency relative to the reference heterojunction solar cell.

To Enhance the Performance of Silicon Solar Cells: A Comprehensive Analysis of Effective Parameters Using PC1D Simulator

The aim of this work was to investigate the effect of some important parameters on the performance of silicon solar cell. Simulation of solar cell was conducted using Personal Computer One Dimensional (PC1D) software. Electric parameters of solar cell such as short circuit current, open circuit voltage and maximum power were obtained from the PC1D for different values of bulk thickness, emitter doping concentration, and base resistivity. Further, fill factor and conversion efficiency of the silicon solar cell were obtained from the simulation results.

Advanced nanostructuring and gradient phosphorus doping enhance p-Si photocathode performance for photoelectrochemical water splitting

This study focuses on enhancing the photoelectrochemical (PEC) performance of p-type silicon (p-Si) solar cells designed for water splitting applications.

Surface engineering of Sio2-Zro2 films for augmenting power conversion efficiency performance of silicon solar cells

Improving solar cell performance hinges significantly on the application of anti-reflective surface coatings. A wide variety of coating techniques, including blade coating, spin coating, dip coating, and others were employed. The present research investigation employed various coating materials, namely SiO2 (Silicon dioxide), ZrO2 (Zirconium dioxide), and SiO2–ZrO2 blends, to apply a protective layer onto polycrystalline silicon solar cells using the sputter coating process. The efficiency of these solar cells with multilayer coating was assessed through diverse characterization methods. The uniform thin films were obtained using a 45-min coating process using an input voltage source of 17 kV, which was confirmed through analyses conducted using FESEM and AFM techniques. The UV–Vis spectroscopy and current-voltage source metre were employed to examine the light absorption and transmittance of bare and coated silicon solar cells. When compared to alternative solar cells, the solar cell coated with a combination of SiO2 and ZrO2 demonstrated uniform deposition and a low light reflectance of only 6 %. SiO2–ZrO2 gains a highest power conversion efficiency (PCE) of 17.6 % under controlled light source. This superior performance was due to the increase in photon transmittance in to the depletion region. Furthermore, the electrical resistivity of the SiO2–ZrO2 blend coated solar cell was measured using the four-probe method was found to be 2.89 × 10−3 Ω-cm, which was lower than that of other solar cells. From the experimental results, it was clear that SiO2 - ZrO2 blend-coated solar cells outperformed both other coated and uncoated solar cells. Consequently, SiO2–ZrO2 blends emerged as superior anti-reflective materials for achieving peak performance.

Investigating the effect of adding silver nanoparticles to hybrid crystalline silicon solar cells

Hybrid silicon solar cells are an implementation of solar cells which have a simple fabrication process meanwhile absorbing a wider range of light spectrums compared to common silicon solar cells, although hybrid silicon solar cells have relatively low efficiencies. Metal nanoparticles have been known to enhance the performance of solar cells due to their localized surface plasmon resonance effect. The present study evaluates the addition of silver nanoparticles to enhance the properties and performance of hybrid silicon solar cells. In this regard silver nanoparticles are added to hybrid silicon solar cells producing different layer combinations in hybrid silicon solar cells. According to the results the addition of silver nanoparticles in specific combinations may enhance the performance whereas in other combinations may destroy the photovoltaic characteristics of the hybrid solar cell. A certain combination of the hybrid silicon solar cells including silver nanoparticles has been proposed wherein the properties of the cell are enhanced due to the plasmonic effect of silver nanoparticles. However, silver nanoparticles added on the surface of the photovoltaic cells cause shading, thus decreasing the active surface of the cell and thereby reducing the efficiency of the cells. Therefore, there is an optimum surface distribution for silver nanoparticles to benefit from the localized surface plasmon resonance effect meanwhile not shading a large amount of the cell and reducing the active surface area of the cell which is evaluated in the present research. Accordingly, by adding silver nanoparticles from a solution of 50% vl concentration the efficiency of the hybrid silicon cell reached 3.7% which is a significant increase compared to the efficiency of the ordinary hybrid silicon solar cells which was 1.8%.

Nano Conducting Particles Based Antireflection Coating for Silicon Solar Cells

An attempt has been made to investigate the effect of antireflection coating containing aluminum nanoparticles over the layer of silicon nitride on silicon surface. In this regard numerical calculations have been performed to obtain reflectance for varying radius (i.e., 50 nm, 62.5 nm and 70 nm) as well as periods (i.e., 100 nm, 110 nm 125 nm, 250 nm and 300 nm) of Al-NCPs using transfer matrix method (TMM). The refractive index of nanoparticles under consideration is wavelength dependent. Inclusion of metal nanoparticles in the antireflection coating has reduced reflectance significantly. Calculated reflectance has been used as an external file in PC1D simulator to study the performance of silicon solar cells.

Impact of Temperature Variation from 300 to 400 K on the Performance of Silicon Solar Cell

Impact of Temperature Variation from 300 to 400 K on the Performance of Silicon Solar Cell

Investigation of sub-stoichiometric MoOx hole-selective contacts for rear junction passivating contact silicon solar cells

Carrier-selective contacts play a crucial role in improving the performance of silicon solar cells by reducing recombination losses. This study explores the use of sub-stoichiometric molybdenum oxide (MoOx) as a hole-selective contact material deposited via thermal evaporation. X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS) analysis reveal diverse Mo–O bonding configurations and a low work function of ∼5.02 eV for the MoOx film. The passivation properties of a cell-like structure with local MoOx contact are found to be comparable to those of a structure with a full front passivation layer, as evidenced by an implied open-circuit voltage (iVoc) of 703.2 mV. However, the conversion efficiency of the solar cell with MoOx contact is limited to 16.5 %, with reduced external quantum efficiency (EQE) at UV and visible wavelengths. The study proposes that optimizing the MoOx front contact's work function and passivation characteristics could improve the solar cell's efficiency to 21.8 %. This research demonstrates the potential of sub-stoichiometric MoOx as a promising hole-selective contact for silicon solar cells, highlighting the factors influencing its performance.

The Fabrication and Characterization of Silicon Surface Grooving Using the CV Etching Technique for Front Deep Metallic Contact Solar Cells

This study experimentally investigated the use of the chemical vapor etching method for silicon surface grooving for regular front deep metallic contact solar cell applications. The thickness of silicon wafers is a crucial parameter in the production of solar cells with front and back buried contacts, because silicon surface grooves result in a larger contact area, which in turn improves carrier collection and increases the collection probability for minority carriers. A simple, low-cost HNO3/HF chemical vapor etching technique was used to create grooves on silicon wafers with the help of a highly effective anti-acid mask. The thick porous layer of powder that was produced was easily dissolved in water, leaving patterned grooved areas on the silicon substrate. A linear dependence was observed between the etched thickness and time, suggesting that the etching process followed a constant etch rate, something that is crucial for ensuring precise and reproducible etching results for the semiconductor and microfabrication industries. Moreover, by creating shorter pathways for charge carriers to travel to their respective contacts, front deep contacts minimize the overall distance they need to traverse and therefore reduce the chance of carrier recombination within the silicon material. As a result, the internal quantum efficiency of solar cells with front deep metallic contacts improved by 35% compared to mc-Si solar cells having planar contacts. The use of front deep contacts therefore represents a forward-looking strategy for improving the performance of silicon solar cells. Indeed, this innovative electrode configuration improves charge carrier collection, mitigates recombination losses, and ultimately leads to more efficient and effective solar energy conversion, which contributes to sustainable energy development in the areas of clean energy resources. Further work needs to be undertaken to develop energy sustainably and consider other clean energy resources.

The Impact of P-Type Layer on Performance and Stability of Thin Film Silicon Solar Cells in Relation to Third Generation: A review Analysis

Thin-film Silicon (Si) Solar Cells (SCs) have emerged as a promising candidate for next-generation photovoltaic devices due to their potential for cost-effectiveness and versatility. However, achieving high efficiency and long-term stability remains a significant challenge in their development. The primary challenges with thin-film Si SCs have been the poor infrared light absorption of Hydrogenated Microcrystalline Silicon (c-Si: H) and the light-induced metastability of Hydrogenated Amorphous Silicon (a-Si: H). This study reviewed the influence of the p-type layer, a key component in thin-film Si SCs, on both performance and stability. Third generation SCs are optimized for high Power Conversion Efficiency (PCE) at low manufacturing costs. According to the review of the comparison analysis, Patel K. et al., (2021) obtained the highest PCE of 30.17% with the a-Si/MoTe2 material (Photocurrent Density Jsc = 32.41mA/cm2, An Open-Circuit Voltage Voc = 1.093V, and Fill Factor (FF) = 85.12%) of the state-of-the-art previous works. The findings presented here contribute valuable insights toward the development of efficient and durable SC technology, crucial for advancing the adoption of renewable energy sources in our ever-growing energy demand.

Contribution of the photoluminescence effect of the stain etched porous silicon in improvement of screen printed silicon solar cell performance

In this work, we investigate the potential use of porous silicon (PS) nanostructures stain etched into photovoltaic technology as one possible way to increase the silicon solar cell (SC) efficiency at low cost. The process is based on a combination of texturization and porous silicon formed by metal assisted etching which used the screen printed front grid contact. The photoluminescence (PL), the reflectivity spectra of the PS layers, spectral response and electrical measurements are presented and discussed. As a result, the short circuit current density was improved by more than 21%. We observed an increase in internal quantum efficiency (iQE) in the region where the PL of the PS layers appears and the minority carriers’ diffusion length is enhanced by more than 60 . We report the correlation between the converter PL intensity and iQE and we demonstrate that the photoluminescence properties and the increased photocurrent result in an improvement of the solar cell efficiency.

Silver Metallization with Controlled Etch Stop Using SiOx Layers in Passivating Contacts for Improved Silicon Solar Cell Performance

Metallization of polycrystalline‐silicon/silicon oxide (poly‐Si/SiOx) passivating contacts with fire‐through silver paste is a crucial process for implementation of passivating contacts in industrial manufacturing of solar cells. For a microscopic understanding of the metallization process, the contact forming interface between the Ag crystallites and the poly‐Si layer is investigated with high‐resolution transmission electron microscopy. For this purpose, multilayer atmospheric pressure chemical vapor deposition poly‐Si samples with a SiOx layer between the individual poly‐Si layers are fabricated, screen printed with a lead‐free Ag paste, and contact fired. Electron micrographs show that in this process the etching of the paste and the subsequent Ag crystallite formation is stopped by this interface with the SiOx layer. Additionally, energy‐dispersive X‐Ray mapping reveals the presence of an oxide layer around the Ag crystallites. This finding differs significantly from well‐investigated classical cell concepts with contact formation on diffused crystalline silicon. Moreover, an analysis of the Ag crystallite orientation in correlation to the neighboring Si crystallite orientation indicates no direct relationship. Finally, it is shown that the use of this multilayer approach is favorable for integration into a solar cell concept leading to a higher passivation quality at the metallized area and lower contact resistivity.

Impact Analysis of Metallization Design and Recombination Losses on Performance of Crystalline Silicon Solar Cells

Using Griddler software, this study aims to select the optimal metallization design by analyzing the impact of the number and sizes of busbars and fingers on a solar cell’s performance. There is interest in the PV industry to reduce the finger size toward 25 μm in upcoming years. It is shown that an increase in the number and size of busbars and fingers causes an increase in the fill factor; however, with regards to the cell’s efficiency, the shading factor should be considered in addition to the size and number of metal contacts. The results of this study indicate that solar cells’ efficiency could be increased by 0.33–0.84% when using five busbars and a finger width of 35 μm. Moreover, this increase is achieved by reducing the emitter resistance to less than 60 ohm/sq and considering a recombination rate of about 165 fA/cm2.

Combining radiative cooling and light trapping strategies for improved performance of PERC bifacial silicon solar cells

This work investigates the impact of combining light trapping and radiative cooling on bifacial solar panels. While several techniques have been proposed to enhance the efficiency of solar panels, their combination can lead to suboptimal results. By numerically evaluating the light absorption and thermal balance of different panel configurations, we found that each side of the bifacial solar cell can be textured independently with a cross-effect of less than 4%. However, our results also indicate that improving visible light trapping can increase infrared absorption, leading to a heating effect that may offset the benefits of radiative cooling. These findings highlight the importance of balancing the factors that influence solar panel efficiency and provide quantitative insights that guide the development of more effective solar energy systems.