Performance Of Photodetectors Research Articles

A General Strategy for Enhancing the Performance of Ga2O3-Based Self-Powered Solar-Blind Photodetectors through Band Structure Engineering

Abstract The spectral response of Ga2O3 almost perfectly covers the 200~280 nm solar-blind ultraviolet wavelength range, making it an ideal semiconductor material for fabricating solar-blind ultraviolet photodetectors. However, due to the considerably deep valence band energy of Ga2O3 the construction of heterojunctions typically induces a significant valence band offset (EV). Herein, we present a band engineering approach to improve the performance of Ga2O3 bases photodetectors. This pronounced valence band barrier can strongly influence the transport of photo-generated charge carriers, especially the extraction of holes in the depletion region. By introducing nitrogen (N) during the growth process, we elevated the valence band of Ga2O3 by 0.43 eV. The organic high-molecular-weight material of PEDOT:PSS has been utilized in conjunction with Ga2O3 to construct heterojunction photodetectors. The photodetectors exhibit excellent self-powered characteristics, with responsivity, detectivity, and response time being nearly ten times higher than those of Ga2O3 photodetectors before band structure modulation. The investigation into modulating the band structure of Ga2O3 carried out in this study will lay the theoretical foundation and provide technical solutions for developing satisfactory self-powered photodetectors.

Optoelectronic performance prediction of HgCdTe homojunction photodetector in long wave infrared spectral region using traditional simulations and machine learning models.

This research explores the design of an infrared (IR) photodetector using mercury cadmium telluride (Hg1-xCdxTe). It proposes two- and three-dimensional homojunction models based on p+-Hg0.7783Cd0.2217Te/n--Hg0.7783Cd0.2217Te, focusing on applications in the long-wavelength infrared range. The photodetector's performance is analyzed using Silvaco ATLAS TCAD software and compared with analytical calculations based on drift-diffusion, tunneling, and Chu's approximation techniques. Optimized for operation at 10.6μm wavelength under liquid nitrogen temperature, the proposed photodetector demonstrates promising optoelectronic characteristics including the dark current density of 0.20mA/cm2, photocurrent density of 4.98A/cm2, and photocurrent density-to-dark current density ratio of 2.46 × 104, a 3-dB cut-off frequency of 104GHz, a rise time of 0.8 ps, quantum efficiency of 58.30%, peak photocurrent responsivity of 4.98A/W, specific detectivity of 3.96 × 1011cmHz1/2/W, and noise equivalent power of 2.52 × 10-16W/Hz1/2 indicating its potential for low-noise, high-frequency and fast-switching applications. The study also incorporates machine learning regression models to validate simulation results and provide a predictive framework for performance optimization, evaluating these models using various statistical metrics. This comprehensive approach demonstrates the synergy between advanced materials science and computational techniques in developing next-generation optoelectronic devices. By combining theoretical modeling, simulation, and machine learning, the research highlights the potential to accelerate progress in IR detection technology and enhance device performance and efficiency. This multidisciplinary methodology could serve as a model for future studies in optoelectronics, illustrating how advanced materials and computational methods can be utilized to enhance device capabilities.

Graphene/black phosphorus-based infrared metasurface absorbers with van der Waals Schottky junctions

Black phosphorus (BP) is a promising candidate for fabricating infrared (IR) photodetectors because its bandgap in the IR region can be controlled by varying the number of layers. BP-based metasurfaces have attracted considerable attention for applications in wavelength-selective and/or polarization-selective IR absorbers. Graphene and BP (Gr/BP) van der Waals (vdW) heterostructures are expected to enhance the performance of BP-based IR photodetectors. However, the Gr/BP vdW heterostructure forms a Schottky junction; thus, the electron transfer between Gr and BP should be investigated to determine the precise optical properties of Gr/BP vdW heterostructure-based metasurfaces. In this study, the electron transfer in the Gr/BP vdW heterostructure is investigated theoretically. The metasurface absorber structure proposed based on the results comprises periodic Gr/BP vdW heterostructure strips on top, a middle dielectric layer, and a bottom reflector. Numerical calculations indicated that the Gr/BP vdW heterostructure has strong wavelength- and polarization-selective near-unity IR absorption. The absorbance is increased and absorption wavelength is shortened compared with those of the monolayer-BP-based metasurface. The absorption wavelength can be controlled by changing the width of the Gr/BP strips owing to the hybrid localized surface plasmons of Gr/BP. This is attributed to the electron transfer through the Schottky junction between Gr and BP with enhanced localized surface plasmon resonance. The results suggest that the Gr/BP vdW heterostructure is a promising platform for realizing wavelength-selective and/or polarization-selective IR photodetectors and IR absorbers/emitters. The resulting photodetectors exhibit high responsivity and low noise because the BP bandgap corresponds to the IR wavelength region.

Improved performance of Ga2O3 solar-blind ultraviolet photodetectors with integrated n+n/Schottky-junctions

Improved performance of Ga2O3 solar-blind ultraviolet photodetectors with integrated n+n/Schottky-junctions

A butterfly shape acceptor with rigid skeleton and unique assembly enables both efficient organic photovoltaics and high-speed organic photodetectors

Abstract It remains challenging to design efficient bifunctional semiconductor materials in organic photovoltaic and photodetector devices. Here, we report a butterfly-shaped molecule, named WD-6, which exhibits low energy disorder and small reorganization energy due to its enhanced molecular rigidity and unique assembly with strong intermolecular interaction. The binary photovoltaic device based on PM6:WD-6 achieved an efficiency of 18.41%. Notably, an efficiency of 19.42% was achieved for the ternary device based PM6:BTP-eC9:WD-6. Moreover, the photodetection device based on WD-6 demonstrated an ultrafast response speed (205 ns response time at λ of 820 nm) and a high cutoff frequency of -3 dB (2.45 MHz), surpassing the values of most commercial Si photodiodes. Based on these findings, we show-cased an application of the WD-6-based photodetection device in high-speed optical communication. These results offer valuable insights into the design of organic semiconductor materials capable of simultaneously exhibiting high photovoltaic and photo detective performance.

Au-Doped Black Silicon Photodetector Fabricated by a Femtosecond Laser with Excellent Near-Infrared Response.

Silicon photonic devices are key components in optical imaging and sensing for communication, and the development of silicon-based photodetectors with ideal performance in the visible and infrared spectral ranges can promote the application of silicon photonics in various photoelectronic systems. Here, a Au-doped black silicon photodetector was prepared by a femtosecond laser direct writing technique. The conical micro-/nanostructures with different sizes were produced by different laser fluence irradiation. Ultrafast pump-probe technology revealed that the strong spallation process and phase explosion between Au and silicon facilitate the interfusion of Au atoms into the silicon lattice. EDS analyses, Raman spectra, and XPS spectra show the uniform distribution of Au elements, multiconfiguration amorphous phase transition, and stable chemical valence states of Au elements in Au-doped black silicon layers, respectively. The excellent geometric light trapping performance of the surface conic structure-assisted photodetector achieved a high absorptance of 95% in the 200-1100 nm band. Simultaneously, the introduction of the intermediate band by Au hyperdoping also leads to a strong absorptance of 75% in the 1100-2500 nm band. The photoelectrical response rate of the Au-doped black silicon photodetectors increased by 10 times in the infrared wavelength band by means of the introduced intermediate energy levels through Au element doping. The switching photocurrent ratio is also found to be boosted 10 times, which comes from the reduction of the photon injection barrier. The excellent photoelectronic properties lead to the increased potential of femtosecond laser processing for integration with photonics and electronics, which shows great possibilities in the further progress of energy devices, information technology, and artificial intelligence.

High-Performance Ga2O3 Solar-Blind Photodetector Based on Thermal Oxidized Ga Buffer-Layer.

High-performance Ga2O3 solar-blind photodetectors are critical for applications due to their selective solar-blind ultraviolet sensitivity. The quality of the Ga2O3 film has a significant impact on the performance of photodetectors. This study presents an innovative approach to enhancing the quality of Ga2O3 films through the introduction of a naturally graded buffer layer, which is formed by the oxidation of a metallic Ga film and significantly improves interface stability by accommodating lattice mismatches and reducing defects. The structural and compositional characteristics of Ga2O3 films were comprehensively analyzed using UV-vis (ultraviolet-visible) spectroscopy, AFM (Atomic Force Microscope), PL (Photoluminescence Spectroscopy), TEM (Transmission Electron Microscope), and XPS (X-ray Photoelectron Spectroscopy). The photodetectors fabricated from these films demonstrate responsivity of 99.8 mA/W and a solar-blind UV/UV ratio of 1.17 × 103, with significant improvement compared to direct deposited films. This research highlights the potential of natural buffering layers to advance the performance of Ga2O3-based solar-blind UV detectors.

Structure Engineering of Ga2O3 photodetectors: A Review

Abstract Deep ultraviolet (DUV) photodetectors play important roles in the modern semiconductor industry due to their diverse applications in critical fields. Wide bandgap semiconductor Ga2O3 is considered as one promising material for highly sensitive DUV photodetectors. However, the high responsivity of Ga2O3 DUV photodetectors always comes at the expense of its response speed. Material engineering for high-quality Ga2O3 materials can optimize the photoresponse performance but at the cost of much more complex process. Structure engineering can efficiently improve the performance of Ga2O3 photodetectors based on various physical mechanisms. Owing to the increased modulation probabilities, part schemes of structure engineering even alleviate the tough requirements on Ga2O3 material quality for high-performance DUV photodetectors. This article reviews the recent efforts in optimizing the performance of Ga2O3 photodetectors through structure engineering. Firstly, photodetectors based on Ga2O3 nanostructures and metasurface structures with nanometer size effect are discussed. In addition, junction structures of Ga2O3 photodetectors, which effectively promote carrier separation in the depletion region, are summarized based on a classification of Schottky junction, heterojunction, phase junction, etc. Besides, Ga2O3 avalanche photodiodes, offering ultra-high gain and responsivity, are focused as a promising prototype for commercialization. Furthermore, field effect phototransistors, based on which the scalability and low power performance of Ga2O3 photodetectors have been well proven, are analyzed in detail. Moreover, auxiliary-field configurations with extra tunable dimensions for Ga2O3 photodetectors are introduced. Finally, we conclude this review and discuss the main challenges of Ga2O3 DUV photodetectors from our perspective.

Room-temperature infrared photoluminescence and broadband photodetection characteristics of Ge/GeSi islands on silicon-on-insulator

In this study, molecular beam epitaxial growth of strain-driven three-dimensional self-assembled Ge/GeSi islands on silicon-on-insulator (SOI) substrates, along with their optical and photodetection characteristics, have been demonstrated. The as-grown islands exhibit a bimodal size distribution, consisting of both Ge and GeSi alloy islands, and show significant photoluminescence (PL) emission at room temperature, specifically near optical communication wavelengths. Additionally, these samples were used to fabricate a Ge/GeSi islands/Si nanowire based phototransistor using a typical e-beam lithography process. The fabricated device exhibited broadband photoresponse characteristics, spanning a wide wavelength range (300-1600 nm) coupled with superior photodetection characteristics and relatively low dark current (∼ tens of pA). The remarkable photoresponsivity of the fabricated device, with a peak value of ∼11.4 A W-1(λ∼ 900 nm) in the near-infrared region and ∼1.36 A W-1(λ∼ 1500 nm) in the short-wave infrared (SWIR) region, is a direct result of the photoconductive gain exceeding unity. The room-temperature optical emission and outstanding photodetection performance, covering a wide spectral range from the visible to the SWIR region, showcased by the single layer of Ge/GeSi islands on SOI substrate, highlight their potential towards advanced applications in broadband infrared Si-photonics and imaging. These capabilities make them highly promising for cutting-edge applications compatible with complementary metal-oxide-semiconductor technology.

High-Performance Gate-Voltage-Tunable Photodiodes Based on Nb2Pd3Se8/WSe2 Mixed-Dimensional Heterojunctions.

The mixed-dimensional (MD) van der Waals (vdWs) heterojunction for photodetectors has garnered significant attention owing to its exceptional compatibility and superior quality. Low-dimensional material heterojunctions exhibit unique photoelectric properties attributed to their nanoscale thickness and vdWs contact surfaces. In this work, a novel MD vdWs heterojunction composed of one-dimensional (1D) Nb2Pd3Se8 nanowires and two-dimensional (2D) WSe2 nanosheets is proposed. The heterojunction's energy band engineering is accomplished by manipulating the Fermi level of the bipolar 2D material via gate voltage, resulting in a rectification characteristic that can be adjusted with gate voltage. Under 685 nm laser irradiation, it demonstrates exceptional self-powered photodetection performance, attaining a photoresponsivity of 1.45 A W-1, an ultrahigh detectivity of 6.8 × 1012 Jones, and an ultrafast response time of 37/64 μs at zero bias. In addition, a broadband photodetector from 255 to 1064 nm is realized. These results demonstrate the great potential of Nb2Pd3Se8/WSe2 MD heterostructures for advanced electronic and optoelectronic devices.

Core-shell nanorods film of p-CuZnS/n-TiO2 with boosting interfacial charge separation for sensitive photoelectrochemical photodetector

Copper zinc sulphide (CZS) due to high conductivity, fast photoresponse and good stability has attracted rising attention in optoelectronic field. Constructing heterojunctions with rational energy bands alignment can accelerate carrier separation to improve the performance of CZS-based photoelectric device. Herein, p-CZS/n-TiO2 core-shell nanorods heterojunction film was successfully fabricated for the first time. CZS nanoparticles (NPs) were directly loaded on the surface of TiO2 nanorods (NRs) through a simple chemical bath deposition. Photoelectrochemical (PEC) photodetector based on CZS/TiO2 composite film was designed and interfacial charge kinetics has also been investigated. The CZS/TiO2 PEC device exhibits fast response speed of 95/56 ms, high responsivity of 7.1 mA W-1 and detectivity of 5.6 × 1012 Jones at a bias voltage of 1 V. The light on/off ratio of self-powered CZS/TiO2 PEC device achieves 5.6 × 103, nearly 30.4 times higher than bare CZS PEC device. Furthermore, the photodetection performance of the CZS/TiO2 PEC device can be effectively regulated by light power density and environment conditions, promoting its adaptability in multifarious practical applications. The findings suggest that CZS/TiO2 heterostructure film devices have great potential for high-performance and energy-efficient PEC photodetectors.

Machine learning framework for selective and sensitive metal ion sensing with nitrogen-doped graphene quantum dots heterostructure

This study introduces a machine learning (ML) framework to optimize photodetector performance for sensor applications. Using the data from the fabricated photodetector with the heterostructure of nitrogen-doped graphene quantum dot and gold nanoparticles (Au@N-GQDs), various supervised ML models (more than 20 models) are trained and tested for the selection and refinement of the most effective algorithm for our work. Depending on the best-performed ML model, the optimized working wavelength of the photodetector is found for the detection of metal ions. Remarkably, the ML-based sensor shows a high level of selectivity and sensitivity in nM level towards Fe3+ ions in Brahmaputra river water. A strong alignment between model predictions and experimental outcomes validates the efficacy of the proposed ML-based framework. Moreover, data visualization techniques such as heatmaps, classification algorithms, and confusion matrices are introduced to identify the trends in the database. The mechanistic insight of the sensor performance towards Fe3+ ion sensing is further explained with heatmap analysis and experimental verification, which emphasizes the role of photo-induced charge transfer and Fe–O bond formation between metal ions and Au@N-GQDs due to the high electron affinity of Fe3+ ions.

Enhanced Photodetection Performance of InBiSe3/ReS2 Polarization-Sensitive Heterostructure Photodetectors.

Individual anisotropic two-dimensional (2D) materials have been widely applied for developing polarization-sensitive photodetectors, but they often suffer from limitations in photoresponsivity, detection range, etc. To overcome these challenges, van der Waals (vdW) heterostructures created by stacking different 2D materials provide a promising solution to enhance the performance of the photoelectronic device. In this work, a novel polarization-sensitive photodetector is developed by leveraging a heterojunction formed by InBiSe3 and anisotropic ReS2 nanoflakes. The InBiSe3/ReS2 vdW heterostructure devices exhibit excellent photodetection performance with a high photoresponsivity (R)of 7.68 AW-1 and a specific detectivity (D*)up to 1.26×1011 Jones as well as an external quantum efficiency (EQE) of 1790% under 532 nm laser irradiation. Additionally, benefiting from the broadband light absorption of InBiSe3 crystals together with the pronounced anisotropic electronic and optical characteristics of ReS2 flakes, the devices demonstrate a broad spectral response range from 402 to 1006 nm with a distinct polarization sensitivity of 1.24. Moreover, the devices exhibit extraordinary optical communication and high contrast polarimetric imaging capacity. This work demonstrates the enhanced photodetection performance with the InBiSe3/ReS2 vdW heterostructures operating in a photoconductive mode and illustrates promising application of these heterostructures in integrated optoelectronic systems.

Organic Bulk-Heterojunction Blends with Vertical Phase Separation for Enhanced Organic Photodetector Performance.

The ternary blending strategy is a fundamental approach that is widely recognized in the field of organic optoelectronics. In our investigation, leveraging the inherent advantages of the ternary component blending methodology, we introduced an innovative design for organic photodetectors (OPDs) aimed at reducing the dark current density (Jd) under reverse bias. This pioneering effort involved combining two distinct conjugated molecules (IT-4F and IEICO-4F) with a conjugated polymer (PM7), resulting in a composite material characterized by a well-defined vertical phase separation. To thoroughly explore device performance variations, we utilized a comprehensive array of analytical techniques, including atomic force microscopy (AFM) cross-section methodologies and Kelvin probe force microscopy (KPFM). Through the optimization of the blend ratio (PM7:IT-4F: IEICO-4F at 1:0.8:0.2), we achieved significant advancements. The resulting OPD demonstrated an exceptional reduction in JD, reaching a remarkably low value of 4.95 × 10-10 A cm-2, coupled with an ultra-high detectivity of 4.95 × 1013 Jones and an outstanding linear dynamic range exceeding 100 dB at 780 nm under a bias of -1V. Furthermore, the attained cutoff frequency reached an impressive 220 kHz, highlighting substantial improvements in device performance metrics. Of particular significance is the successful translation of this technological breakthrough into real-world applications, such as in heart rate sensing, underscoring its tangible utility and expanding its potential across various fields. This demonstrates its practical relevance and underscores its versatility in diverse settings.

Recent Advances in Organic Photodetectors

Organic photodetectors (OPDs) have garnered significant attention in fields such as image sensing, health monitoring, and wearable devices due to their exceptional performance. This review summarizes recent research advancements in materials, structures, performance, and applications of narrowband organic photodetectors, hybrid organic–inorganic perovskite photodetectors, flexible organic photodetectors (FOPDs), and photomultiplication type organic photodetectors (PM-OPDs). Organic semiconductors offer substantial potential in optoelectronic devices owing to their low cost, ease of processing, and tunable spectral response. Hybrid perovskite materials extend the spectral response range, FOPDs meet the demands of wearable devices, and PM-OPDs enhance sensitivity, allowing for the detection of weak light signals. Through innovations in materials, structural optimization, and improvements in manufacturing processes, the performance of OPDs has seen significant enhancement. This article also explores the application prospects of these technologies in medical monitoring, optical communications, and image sensing.

Recent Advances in Black Silicon Surface Modification for Enhanced Light Trapping in Photodetectors

The intricate nanostructured surface of black silicon (BSi) has advanced photodetector technology by enhancing light absorption. Herein, we delve into the latest advancements in BSi surface modification techniques, specifically focusing on their profound impact on light trapping and resultant photodetector performance improvement. Established methods such as metal-assisted chemical etching, electrochemical etching, reactive ion etching, plasma etching, and laser ablation are comprehensively analyzed, delving into their mechanisms and highlighting their respective advantages and limitations. We also explore the impact of BSi on the emerging applications in silicon (Si)-based photodetectors, showcasing their potential for pushing the boundaries of light-trapping efficiency. Throughout this review, we critically evaluate the trade-offs between fabrication complexity and performance enhancement, providing valuable insights for future development in this rapidly evolving field. This knowledge on the BSi surface modification and its applications in photodetectors can play a crucial role in future implementations to substantially boost light trapping and the performance of Si-based optical detection devices consequently.

The Construction and Mechanism Study of High-Speed Carrier Transport Channel in Gallium Arsenide Homojunction Toward High-Performance Photoelectrochemical Photodetector.

The energy band structure and surface/interface properties are prerequisite for not only preserving the intrinsic material quality but also manipulating carrier transport behavior for photoelectrochemical (PEC) photodetection. How to precisely design/regulate the band structure and surface/interface properties of semiconductor materials is the key to improving the performance of PEC photodetection. Herein, the quintuple heterotypic homojunction (QH) GaAs film is fabricated with a gradient energy band via plasma-assisted molecular beam epitaxy for constructing a high-speed carrier transport channel in PEC photodetection, which can efficiently drive the separation and transport of photogenerated electron-hole pairs. The designed QH-GaAs-based PEC photodetector exhibits excellent performances, compared with bare i-GaAs, delivering an ultrashort rise/decay times of only 1.1/1.1ms and a high responsivity of 20.4mAW-1 at 0V under 850nm illumination. Strikingly, an ultrahigh detectivity with 1.46×1012 Jones is achieved. More importantly, the QH-GaAs device can stably operate underwater seawater environment. This study provides a novel strategy for designing and fabricating multiple heterotypic homojunction with gradient energy band to boost charge transport dynamics for PEC fields.

Tailored Environment-Friendly Reverse Type-I Colloidal Quantum Dots for a Near-Infrared Optical Synapse and Artificial Vision System.

Colloidal quantum dots (QDs) are emerging as potential candidates for constructing near-infrared (NIR) photodetectors (PDs) and artificial optoelectronic synapses due to solution processability and a tunable bandgap. However, most of the current NIR QDs-optoelectronic devices are still fabricated using QDs with incorporated harmful heavy metals of lead (Pb) and mercury (Hg), showing potential health and environment risks. In this work, we tailored eco-friendly reverse type-I ZnSe/InP QDs by copper (Cu) doping and extended the photoresponse from the visible to NIR region. Transient absorption spectroscopy analysis revealed the presence of Cu dopant states in ZnSe/InP:Cu QDs that facilitated the extraction of photogenerated charge carriers, leading to an enhanced photodetection performance. Specifically, under 400 nm illumination, the Cu-doped ZnSe/InP QDs-based PDs presented a broadband photodetection ranging from ultraviolet (UV) to NIR, with a responsivity of 70.5 A W-1 and detectivity of 2.8 × 1011 Jones, surpassing those of the undoped ZnSe/InP QDs-based PDs (49.4 A W-1 and 1.9 × 1011 Jones, respectively). More importantly, the ZnSe/InP:Cu QDs-PDs demonstrated various synapse-like characteristics of short-term plasticity (STP), long-term plasticity (LTP), and learning-forging-relearning under NIR light illumination, which were further used to construct PD array devices for simulating the artificial visual system that is available in prospective optical neuromorphic applications.

ZnO@NiO core-shell heterojunction photoanode modified with NiOOH co-catalyst for high-performance self-powered photoelectrochemical-type UV photodetector

ZnO, a promising photoanode material, faces significant challenges in achieving high-efficient photoelectrochemical (PEC) type UV photodetectors due to inadequate charge separation and sluggish surface reaction kinetics. Constructing heterojunction nanostructures by coupling of p-NiO to n-ZnO nanowire arrays with well-aligned energy band positions presents a feasible strategy for enhancing PEC-type photodetector performance. Herein, we demonstrate that the designed ZnO@NiO core–shell nanowire arrays form a spatial charge transfer channel, facilitating efficient generation and extraction of charge carriers. The exceptional catalytic properties of NiOOH, derived from the transformation of NiO in an aqueous alkaline environment, serve as a potent co-catalyst, effectively accelerating the kinetics of the surface oxygen evolution reaction. Benefiting from the synergistic effect of the heterojunction and cocatalyst, the optimized photoanode achieves a high responsivity of 438.36 mA/W, a large detectivity of 4.85 × 1012 Jones, and rapid response time of 150.05/150.26 ms, while simultaneously exhibiting long-time PEC stability. This work highlights the critical role of nanostructure design in developing high-performance self-powered UV photodetectors.

A strategy for achieving high-performance single layer polymer photodetectors through dark current reduction using PMMA additives

Suppressing dark current density is crucial for optimizing the performance of organic photodetectors (PDs), particularly in terms of detectivity (D∗) and linear dynamic range (LDR). Organic PDs often utilize the bulk heterojunction structure of organic solar cells to significantly increase photocurrent. However, unlike solar cells, which are unaffected by dark current, photodetectors' performance is substantially limited by it. The interconnected network of bulk heterojunctions leads to a noticeable increase in dark current, thus degrading device performance. Typically, reducing dark current involves adding a modification layer or using multilayer planar heterojunctions, which effectively reduce dark current but often delay response speed and complicate manufacturing. This study presents an alternative approach by incorporating a small concentration of PMMA into single-layer polymer photodetectors, significantly reducing dark current without affecting photocurrent. For this single-layer polymer PD, an ultra-low dark current density of 1.25 × 10−8 A/cm2, a high Dsh∗ of 2.74 × 1012 Jones, an LDR of 120.5 dB, and a fast response time with 1.6 μs were achieved. The capacitance-voltage (C-V), electrochemical impedance spectroscopy (EIS), scanning electron microscopy (SEM), and atomic force microscopy (AFM) measurements revealed that the PMMA additive reduces internal defects, increases bulk resistance, optimizes phase separation, and enhances carrier transport efficiency. The improved device performances are attributed to a more efficient vertical arrangement of the donor-acceptor interface and carrier channels, thus reducing carrier recombination loss. These findings offer a new direction for fabricating high-performance single-layer photodetectors.