This work presents the investigation of the GLAD technique to fabricate Tantalum pentoxide (Ta2O5) Nanorods for the application of ultraviolet (UV) photodetector. X-ray diffraction (XRD), Field emission scanning electron microscopy (FESEM), Transmission electron microscopy (TEM), UV–visible absorption, and electrical characterization were performed on the fabricated samples. Ta2O5 amorphous nature was revealed via XRD pattern and selected area electron diffraction (SAED) analysis. FESEM and TEM images reveal the growth of vertical nanorods. In the UV–visible region, there is strong absorption, with a direct bandgap of about 3.9 eV. The electrical analysis was conducted at room temperature for the voltage between −10 and 10 V, revealing the performance of the device, with a high responsivity of 5.7 A/W, detectivity (D*) of 11.62 × 1013, and a noise equivalent power (NEP) value of 2.975 × 10−12. In addition, it has a stable switching response at -3V with a rise time of 0.15 s and a fall time of 0.17 s.