Peak External Quantum Efficiency Research Articles

Thermal management towards ultra-bright and stable perovskite nanocrystal-based pure red light-emitting diodes

Despite the promising candidacy of perovskite nanocrystals for light-emitting diodes, their pure red electroluminescence is hindered by low saturated luminance, severe external quantum efficiency roll-off, and inferior operational stability. Here, we report ultra-bright and stable pure red light-emitting diodes by manipulating Joule heat generation in the nanocrystal emissive layer and thermal management within the device. Diphenylphosphoryl azide-mediated regulation of the nanocrystal surface synergistically enhances the optical properties and carrier transport of the emissive layer, enabling reduced Joule heat generation and thus lowering the working temperature. These merits inhibit ion migration of the CsPb(Br/I)3 nanocrystal film, promising excellent spectra stability. Combined with the highly thermal-conductive sapphire substrates and implementation of pulse-driving mode, the pure red light-emitting diodes exhibit an ultra-bright luminance of 390,000 cd m−2, a peak external quantum efficiency of 25%, suppressed efficiency roll-off, an operational half-life of 20 hours, and superior spectral stability within 15 A cm−2.

Bilateral Embedded Anchoring via Tailored Polymer Brush for Large-Area Air-processed Blue Light-Emitting Diodes.

Perovskite light-emitting diodes (PeLEDs) that can be air-processed promises the development of displaying optoelectronic device, while is challenged by technical difficulty on both the active layer and hole transport layer (HTL) caused by the unavoidable humidity interference. Here, we propose and validate that, planting the polymer brush with tailored functional groups in inorganic HTL, provides unique bilateral embedded anchoring that is capable of simultaneously addressing the n phases crystallization rates in the active layer as well as the deteriorated particulate surface defects in HTL. Exemplified by zwitterionic polyethyleneimine-sulfonate (PEIS) in present study, its implanting in NiOx HTL offers abundant nuclei sites of amino and sulfonate groups that balance the growth rate of different n phases in quasi-2D perovskite films. Moreover, the PEIS effectively nailed the interfacial contact between perovskite and NiOx, and reduced the particulate surface defects in HTL, leading to the enhanced PLQY and stability of large-area blue perovskite film in ambient air. By virtue of these merits, present work achieves the first demonstration of the air-processed blue PeLEDs in large emitting area of 1.0 cm2 with peak external quantum efficiency (EQE) of 2.09 %, which is comparable to the similar pure-bromide blue PeLEDs fabricated in glovebox.

Highly efficient blue light-emitting diodes based on mixed-halide perovskites with reduced chlorine defects.

Perovskite light-emitting diodes (PeLEDs) provide excellent opportunities for low-cost, color-saturated, and large-area displays. However, the performance of blue PeLEDs lags far behind that of their green and red counterparts. Here, we show that the external quantum efficiencies (EQEs) of blue PeLEDs scale linearly with the photoluminescence quantum yields (PL QYs) of CsPb(BrxCl1-x)3 nanocrystals emitting at 460 to 480 nm. The recombination efficiency of carriers is highly sensitive to the chlorine content and the related deep-level defects in nanocrystals, causing notable EQE drops even with minor increases in chlorine defects. Minor adjustments of chlorine content through rubidium compensation on the A-site effectively suppress the formation of nonradiative defects, improving PL QYs while retaining desirable bandgaps for blue-emitting nanocrystals. Our PeLEDs with record-high efficiencies span the blue spectrum, achieving peak EQEs of 12.0% (460 nm), 16.7% (465 nm), 21.3% (470 nm), 24.3% (475 nm), and 26.4% (480 nm). This work exemplifies chlorine-defect control as a key design principle for high-efficiency blue PeLEDs.

Impact of crystallographic facet of InGaN micro-LED sidewalls on electro-optical characteristics

InGaN micro-LEDs (μLEDs) with their potential high-volume applications have attracted substantial research interest in the past years. In comparison to other III–V semiconductors, InGaN exhibits a reduced susceptibility toward non-radiative surface recombination. However, efficiency degradation becomes more prominent as dimensions shrink to a few μm or less. Due to the high surface-to-volume ratio of the miniaturized devices, the non-radiative recombination increases and reduces the internal quantum efficiency. While many groups focus on surface passivation to mitigate surface defects, the influence of crystallographic orientation of the μLED sidewall on the efficiency remains unexplored. This study addresses this gap by investigating the impact of crystallographic orientation of the sidewalls on the emission properties of the μLEDs. Hexagonal and elongated μLEDs with dimensions as small as 3.5 μm and sidewalls with crystallographically well-defined m- and a-planes were fabricated. Electrical and optical properties were investigated using photo- and electroluminescence. External quantum efficiency (EQE) is assessed based on well-known carrier recombination models. It can be shown that μLED performance intrinsically depends on the crystallographic orientation of the sidewalls. Comparing hexagonal μLED structures with a-plane and m-plane sidewalls, an increase in the EQE by 33% was observed for structures with a-plane sidewalls, accompanied by reduction in the current density of the peak EQE by a nearly two orders of magnitude compared to structures with m-plane sidewalls. By analyzing the EQE characteristics at the μLED center and near the sidewalls, the improvements can be directly attributed to the increased radiative recombination from sidewalls with a-plane orientation.

Efficient white light-emitting electrochemical cells based on quantum-dot color conversion layers with high EQE >20 %

Solid-state light-emitting electrochemical cells (LECs) offer promising benefits, including simple device architecture, low operating voltage, and insensitivity to electrode work functions. These advantages make them highly suitable for low-cost display and lighting applications, with significant potential for widespread adoption. However, great challenges remain in realizing stable and efficient white LECs. In this work, the blue LECs integrated with red or yellow/red quantum-dot (QD) color conversion layers (CCLs) are shown to achieve efficient and stable white emissions. When the blue LECs are combined with red QD CCLs, they achieve an external quantum efficiency (EQE) exceeding 20 % at a low current density of 0.003 mA cm−2. Alternatively, the blue LECs integrated with yellow/red QD CCLs deliver white emissions with a low CCT <2500 K and a high CRI up to 93 while the peak EQE at a low current density of 0.005 mA cm−2 still remains high (>16 %). The data effectively showcase that efficient and stable white emission can be achieved through partial energy down-conversion from the blue LECs to the QD CCLs, and the proposed white light sources are potential candidates for lighting applications.

Flexible Substrate-Compatible and Efficiency-Improved Quantum-Dot Light-Emitting Diodes with Reduced Annealing Temperature of NiOx Hole-Injecting Layer

The growing demand for wearable and attachable displays has sparked significant interest in flexible quantum-dot light-emitting diodes (QLEDs). However, the challenges of fabricating and operating QLEDs on flexible substrates persist due to the lack of stable and low-temperature processable charge-injection/-transporting layers with aligned energy levels. In this study, we utilized NiOx nanoparticles that are compatible with flexible substrates as a hole-injection layer (HIL). To enhance the work function of the NiOx HIL, we introduced a self-assembled dipole modifier called 4-(trifluoromethyl)benzoic acid (4–CF3–BA) onto the surface of the NiOx nanoparticles. The incorporation of the dipole molecules through adsorption treatment has significantly changed the wettability and electronic characteristics of NiOx nanoparticles, resulting in the formation of NiO(OH) at the interface and a shift in vacuum level. The alteration of surface electronic states of the NiOx nanoparticles not only improves the carrier balance by reducing the hole injection barrier but also prevents exciton quenching by passivating defects in the film. Consequently, the NiOx-based red QLEDs with interfacial modification demonstrate a maximum current efficiency of 16.1 cd/A and a peak external quantum efficiency of 10.3%. This represents a nearly twofold efficiency enhancement compared to control devices. The mild fabrication requirements and low annealing temperatures suggest potential applications of dipole molecule-modified NiOx nanoparticles in flexible optoelectronic devices.

Fabrication of red-emitting perovskite LEDs by stabilizing their octahedral structure.

Light-emitting diodes (LEDs) based on metal halide perovskites (PeLEDs) with high colour quality and facile solution processing are promising candidates for full-colour and high-definition displays1-4. Despite the great success achieved in green PeLEDs with lead bromide perovskites5, it is still challenging to realize pure-red (620-650 nm) LEDs using iodine-based counterparts, as they are constrained by the low intrinsic bandgap6. Here we report efficient and colour-stable PeLEDs across the entire pure-red region, with a peak external quantum efficiency reaching 28.7% at 638 nm, enabled by incorporating a double-end anchored ligand molecule into pure-iodine perovskites. We demonstrate that a key function of the organic intercalating cation is to stabilize the lead iodine octahedron through coordination with exposed lead ions and enhanced hydrogen bonding with iodine. The molecule synergistically facilitates spectral modulation, promotes charge transfer between perovskite quantum wells and reduces iodine migration under electrical bias. We realize continuously tunable emission wavelengths for iodine-based perovskite films with suppressed energy loss due to the decrease in bond energy of lead iodine in ionic perovskites as the bandgap increases. Importantly, the resultant devices show outstanding spectral stability and a half-lifetime of more than 7,600 min at an initial luminance of 100 cd m-2.

Solvent-Reconstructed Interface That Enhances Light Out-Coupling in Quasi-Two-Dimensional Perovskite Light-Emitting Diodes.

Light management is critical to maximizing the external quantum efficiency of perovskite light-emitting diodes (PeLEDs), but strategies for enhancing light out-coupling are typically complex and expensive. Here, using a facile solvent treatment strategy, we create a layer of lithium fluoride (LiF) nanoislands that serve as a template to reconstruct the light-extracting interfaces for PeLEDs. The nanoisland interface rearranges the near-field light distribution in order to maximize the efficiency of internal light extraction. With the proper adjustment of the nanoisland size and distribution, we have achieved an optimal balance between charge injection and light out-coupling, resulting in bright, pure-red quasi-two-dimensional PeLEDs with a 21.8% peak external quantum efficiency.

High‐Quality γ‐CsPbI3 Cuboid Crystallites Grown by Amorphous‐Complex Conversion for Efficient and Bright Deep‐Red Light‐Emitting Diodes

AbstractInorganic CsPbI3 perovskite has great potential to fabricate deep‐red light‐emitting diodes (LEDs) owing to excellent color purity, thermal stability, and carrier mobility. However, fabricating high‐quality CsPbI3 thin films for high‐performance LEDs remains challenging. While it is demonstrated that hydrogen bonds between organic ammonium cations and molecule additives can lead to high‐quality organic–inorganic hybrid perovskite films, this method cannot be applied to CsPbI3 thin films due to the absence of hydrogen bonds between Cs+ ions and additives. In this study, an amorphous complex‐seed‐crystal growth process to fabricate high‐quality γ‐CsPbI3 cuboid crystallite thin films, is reported. During the initial annealing, the metastable intermediates formed crystal nucleate seeds and transformed into amorphous complex intermediates, maintaining stability at an elevated temperature for perovskite crystallization. With prolonged annealing, the amorphous complex around the nucleate seeds gradually converts to γ‐CsPbI3 perovskite, enabling us to fabricate CsPbI3 thin films with high crystallinity and orientation. The resulting deep‐red LEDs exhibit a peak external quantum efficiency (EQE) of 16.5% and a high maximum luminance of 3158 cd m−2. Moreover, the devices show significantly suppressed efficiency roll‐off, maintaining an EQE of 14.8% even under a high current density of 500 mA cm−2.

The synergy of pre-frozen substrates and post-annealing for high-efficiency co-evaporated blue perovskite LEDs

The co-evaporation technique shows great potential for producing perovskite films. However, there is a lack of research on the growth process and the film characteristics of co-evaporated perovskite. Herein, we found that pre-frozen substrates and post-annealing can synergically improve the performance of co-evaporated blue perovskite light-emitting diodes (PeLEDs). The optimized blue PeLEDs obtained an impressive peak external quantum efficiency (EQE) of 7.2%, which is the best reported for co-evaporated blue PeLEDs till now. The systematic investigation found that the pre-frozen substrates can facilitate the exotherm of vaporized precursor molecules near the interface, leading to more efficient nucleation and constraining grain enlargement. Furthermore, low-temperature annealing (LTA) can efficiently suppress compositional segregation and release residual compressive strain in co-evaporated perovskite films while retaining the advantages of pre-frozen substrates. This work provided deeper insights into perovskite films prepared by co-evaporation and offered a feasible strategy for enhancing the performance of the co-evaporated PeLEDs.

Acceleration of radiative recombination for efficient perovskite LEDs

The increasing demands for more efficient and brighter thin-film light-emitting diodes (LEDs) in flat-panel display and solid-state lighting applications have promoted research into three-dimensional (3D) perovskites. These materials exhibit high charge mobilities and low quantum efficiency droop1–6, making them promising candidates for achieving efficient LEDs with enhanced brightness. To improve the efficiency of LEDs, it is crucial to minimize nonradiative recombination while promoting radiative recombination. Various passivation strategies have been used to reduce defect densities in 3D perovskite films, approaching levels close to those of single crystals3. However, the slow radiative (bimolecular) recombination has limited the photoluminescence quantum efficiencies (PLQEs) of 3D perovskites to less than 80% (refs. 1,3), resulting in external quantum efficiencies (EQEs) of LED devices of less than 25%. Here we present a dual-additive crystallization method that enables the formation of highly efficient 3D perovskites, achieving an exceptional PLQE of 96%. This approach promotes the formation of tetragonal FAPbI3 perovskite, known for its high exciton binding energy, which effectively accelerates the radiative recombination. As a result, we achieve perovskite LEDs with a record peak EQE of 32.0%, with the efficiency remaining greater than 30.0% even at a high current density of 100 mA cm−2. These findings provide valuable insights for advancing the development of high-efficiency and high-brightness perovskite LEDs.

Etching-free pixel definition in InGaN green micro-LEDs

The traditional plasma etching process for defining micro-LED pixels could lead to significant sidewall damage. Defects near sidewall regions act as non-radiative recombination centers and paths for current leakage, significantly deteriorating device performance. In this study, we demonstrated a novel selective thermal oxidation (STO) method that allowed pixel definition without undergoing plasma damage and subsequent dielectric passivation. Thermal annealing in ambient air oxidized and reshaped the LED structure, such as p-layers and InGaN/GaN multiple quantum wells. Simultaneously, the pixel areas beneath the pre-deposited SiO2 layer were selectively and effectively protected. It was demonstrated that prolonged thermal annealing time enhanced the insulating properties of the oxide, significantly reducing LED leakage current. Furthermore, applying a thicker SiO2 protective layer minimized device resistance and boosted device efficiency effectively. Utilizing the STO method, InGaN green micro-LED arrays with 50-, 30-, and 10-µm pixel sizes were manufactured and characterized. The results indicated that after 4 h of air annealing and with a 3.5-μm SiO2 protective layer, the 10-µm pixel array exhibited leakage currents density 1.2 × 10−6 A/cm2 at −10 V voltage and a peak on-wafer external quantum efficiency of ~6.48%. This work suggests that the STO method could become an effective approach for future micro-LED manufacturing to mitigate adverse LED efficiency size effects due to the plasma etching and improve device efficiency. Micro-LEDs fabricated through the STO method can be applied to micro-displays, visible light communication, and optical interconnect-based memories. Almost planar pixel geometry will provide more possibilities for the monolithic integration of driving circuits with micro-LEDs. Moreover, the STO method is not limited to micro-LED fabrication and can be extended to design other III-nitride devices, such as photodetectors, laser diodes, high-electron-mobility transistors, and Schottky barrier diodes.

Synergistic Modulation of Excited State Ingredients and Chiroptical Activity for High‐Performance Pure‐Green Circularly Polarized Electroluminescence

AbstractThe integration of chiral elements within a multiple resonance (MR) motif affords a prospective avenue to construct satisfying emitters tailored for state‐of‐the‐art circularly polarized organic light–emitting diodes (CP‐OLEDs). However, the concurrently realizing of both high luminescence efficiency and favorable dissymmetry factors (gPL) still remains a formidable challenge, particularly when aligning with the requirement of high color purity. Herein, a dual‐pronged approach is proposed to reconcile such trade‐offs by directly fusing a secondary chiral donor onto the MR scaffold, thereby facilitating a hybrid short/long‐range charge‐transfer with fine‐tuned compositions. Theoretical calculations unveil the pronounced impact of the chiral donor on meticulously refining the characteristics of excited states, therefore yielding a considerable gPL of 3.3 × 10−3, along with a high fluorescence quantum yield of 0.97, and a rapid reverse intersystem crossing rate of 3.06 × 105 s−1 in one embodiment. Leveraging these merits, electroluminescence devices incorporating them as chiral dopants exhibit exceptional performance, showcasing a peak external quantum efficiency of 36.6% and remarkable Commission Internationale de L'Eclairage coordinates of (0.19, 0.71), which represent one of the most notable achievements among pure‐green CP‐OLEDs.

UV‐A/B High‐Sensitivity Organic Photodetectors Containing Butterfly‐Shaped Furan‐Fused BN‐Dihydropyrene with Push‐Pull Electron “Wings” toward Image Sensor

AbstractReplacement of C─C unit with its isoelectronic B─N unit in aromatics provides a new class of molecules with appealing properties. Herein, Five novel butterfly‐shaped furan‐fused bis‐BN dihydropyrenes (FBN) derivatives are synthesized with different push‐pull electron “wings”. These compounds exhibit prominent UV‐A/B absorption, high energy levels, and p‐type characteristics. Thanks to the side‐chain engineering and BN dipole manipulation, their intramolecular dipole moments and intermolecular stacking mode are effectively regulated to improve intra‐ and inter‐molecular charge transfer, thus achieving high hole mobilities. Five FBN‐X compounds are doped with PC71BM as heterojunction photosensitive layers to fabricate solution‐processed high performance organic photodetectors (OPDs), which exhibit self‐powered effect and high sensitivity to UV‐A/B. Especially, the FBN‐CN‐based device presents a high detectivity up to 1.72 × 1012 Jones, a peak external quantum efficiency of 19.1%, and an extremely low dark current density of 8.90 × 10−10 A cm−2 under 320 nm at 0 V. To the best of authors knowledge, it is the first report of photodiode‐type UV‐OPDs containing BN‐doped polycyclic aromatic hydrocarbons as active layer to date. And the optimal device shows a significant advantage over the reported 300–380 nm UV‐OPDs. In addition, a 10 × 10 array of organic image sensor is successfully demonstrated, which showcases excellent low‐light imaging capability.

Quantum‐Dots Matrix Encapsulated CsPbI3 Polycrystal Composite Films for Efficient and Bright Deep‐Red Light‐Emitting Diodes

AbstractAll‐inorganic CsPbI3 perovskite is a promising emitter for deep‐red light‐emitting diodes (LEDs). However, presently fabricated CsPbI3 polycrystalline films are composed of island‐like polycrystals, encountering the problems of serious interface current leakage and low‐efficiency carrier radiative recombination. Here, a CsPbI3‐xBrx quantum dots (QDs) matrix encapsulated CsPbI3 polycrystal film is reported to address the low‐efficiency issue of island‐like CsPbI3 polycrystalline film applied in deep‐red LEDs. The developed QDs matrix encapsulation strategy has two benefits. One is the filling of void space in the island‐like CsPbI3 polycrystal film to suppress the interface current leakage. The other more important benefit is utilizing the strong carrier confinement effect of QDs to strengthen the formation of excitons in the composite film and thus improve the electroluminescence efficiency. Moreover, interesting grain growth is found between CsPbI3‐xBrx QDs and CsPbI3 polycrystals, which further enhances the exciton transfer effect brought by the QDs matrix and optoelectronic properties of the fabricated composite films. Based on the obtained high‐quality QDs/polycrystal composite films, efficient and bright deep‐red LEDs are achieved with a peak external quantum efficiency of 15.24% and a maximum luminance of 3691 cd m−2.

Efficient Charge Injection for Perovskite Light‐Emitting Transistor

AbstractMetal halide perovskite semiconductors have demonstrated remarkable performance in light‐emitting‐diode applications in recent years. However, their potential application in other emerging optoelectronic devices, such as light‐emitting field‐effect transistors (LEFETs) is impeded by poor luminous efficiency due to inefficient charge injection. Here, an n‐type MgZnInO (MIZO) as the channel layer is synthesized to achieve efficient electron injection in perovskite LEFETs. These findings indicate that the incorporation of Mg not only suppresses the generation of oxygen vacancies but also optimizes the energy level alignment. These synergistic effects reduce non‐radiative recombination and improve interfacial charge transport. Consequently, the MIZO‐based perovskite LEFETs exhibit an improvement in threshold voltage, subthreshold swing, and field‐effect mobility. The electroluminescence performance shows a peak external quantum efficiency (EQE) of 1.97% with a maximum brightness of 2.1 × 104 cd m−2, accompanied by low‐efficiency roll‐off (an EQE of 1.88% at the current density of 810 mA cm−2). To the best of the author's knowledge, this represents the best luminous efficiency reported for perovskite LEFETs to date.

High Efficiency of 5 μm‐Diameter Blue Micro‐Light‐Emitting Diodes

Small‐size pixels and high efficiency under low injection levels are required for high‐resolution microdisplay. Efficient blue InGaN micro‐light‐emitting diodes (μLEDs) with 5 μm diameter are fabricated using AuSn flip‐chip bonding, high reflection electrodes, and large‐area N electrodes surrounding the mesas. The peak external quantum efficiency (EQE) measured in an integrating sphere is as high as 13.67% at a current density of 5.4 A cm−2. Moreover, at a current density of 0.1 A cm−2, EQE can still reach 11.69%. The electrical efficiency approaches 1, and the differential slope of log L versus log I is close to 1 at low current density. These results suggest significant progress in exploring high‐efficiency 5 μm InGaN blue μLEDs.

Multifunctional Ionic‐Ligand Regulated High‐Quality γ‐CsPbI3 Thin Films for Efficient and Bright Deep‐Red Light‐Emitting Diodes

AbstractAll‐inorganic CsPbI3 perovskite semiconductor is attractive for deep‐red light‐emitting diodes (LEDs) because of its high photoluminescence, good thermal stability, excellent charge transport, and solution processability. However, the metastable phase of optically active CsPbI3 hinders the fabrication of efficient and bright deep‐red LEDs. Herein, a multifunctional ionic ligand regulation strategy using (2‐hydroxy‐5‐methylphenyl) triphenyl‐phosphonium iodide and 3‐(N, N‐dimethyloctylammonio) propanesulfonate is reported to regulate the optically active CsPbI3 crystallization and thus obtain high‐quality γ‐CsPbI3 thin films. The high crystallinity and preferential orientation of γ‐CsPbI3 arise from the strong bonding between the ionic ligands and ionic lead halide clusters. The obtained γ‐CsPbI3 thin films also possess suppressed defect densities, high luminescence, and high stability. Using this high‐quality thin film, an efficient and bright deep‐red LED with a peak external quantum efficiency of 13.34% and a maximum luminance of 2110 cd m−2 is successfully fabricated. The operational lifetime of the fabricated LED (time to half of the initial brightness, T50) reaches up to 40 min under a high current density of 50 mA cm−2 (corresponding to the initial brightness of 200 cd m−2).

Modulation of Nucleation and Growth Kinetics of Perovskite Nanocrystals Enables Efficient and Spectrally Stable Pure-Red Light-Emitting Diodes.

Perovskite light-emitting diodes (PeLEDs) based on CsPb(Br/I)3 nanocrystals (NCs) usually suffer from severe spectral instability under operating voltage due to the poor-quality PeNCs. Herein, zeolite was utilized to prepare high-quality CsPb(Br/I)3 NCs via promoting the homogeneous nucleation and growth and suppressing the Ostwald ripening of PeNCs. In addition, the decomposed zeolite interacted strongly with PeNCs through Pb-O bonds and hydrogen bonds, which inhibited the formation of defects and suppressed halide ion migration, leading to an improved photoluminescence quantum yield (PLQY) and enhanced stability of PeNCs. Moreover, the strong binding affinity of decomposed zeolite to PeNCs contributed to the formation of homogeneous perovskite films with high PLQY. As a result, pure-red PeLEDs with Commission International de I'Eclairage (CIE) coordinates of (0.705, 0.291) were fabricated, approaching the Rec. 2020 red primary color. The devices achieved a peak external quantum efficiency of 23.0% and outstanding spectral stability.

Nanosurface-reconstructed perovskite for highly efficient and stable active-matrix light-emitting diode display.

Perovskite quantum dots (QDs) are promising for various photonic applications due to their high colour purity, tunable optoelectronic properties and excellent solution processability. Surface features impact their optoelectronic properties, and surface defects remain a major obstacle to progress. Here we develop a strategy utilizing diisooctylphosphinic acid-mediated synthesis combined with hydriodic acid-etching-driven nanosurface reconstruction to stabilize CsPbI3 QDs. Diisooctylphosphinic acid strongly adsorbs to the QDs and increases the formation energy of halide vacancies, enabling nanosurface reconstruction. The QD film with nanosurface reconstruction shows enhanced phase stability, improved photoluminescence endurance under thermal stress and electric field conditions, and a higher activation energy for ion migration. Consequently, we demonstrate perovskite light-emitting diodes (LEDs) that feature an electroluminescence peak at 644 nm. These LEDs achieve an external quantum efficiency of 28.5% and an operational half-lifetime surpassing 30 h at an initial luminance of 100 cd m-2, marking a tenfold improvement over previously published studies. The integration of these high-performance LEDs with specifically designed thin-film transistor circuits enables the demonstration of solution-processed active-matrix perovskite displays that show a peak external quantum efficiency of 23.6% at a display brightness of 300 cd m-2. This work showcases nanosurface reconstruction as a pivotal pathway towards high-performance QD-based optoelectronic devices.