Pb(Mg1/3Nb2/3)O3-PbTiO3 Research Articles

Harnessing the mechanical and magnetic energy with PMN-PT/Ni-Mn-In-based flexible piezoelectric nanogenerator

Multifunctional piezoelectric nanogenerators (PENG) hold significant potential in developing smart sensing technologies for the military, healthcare, and industrial sectors. Here, we present the efficient energy harvesting from mechanical and magnetic stimuli in 0.67Pb (Mg1/3Nb2/3)O3-0.33PbTiO3 (PMN-PT) / Ni50Mn35In15 (Ni-Mn-In)-based PENG fabricated on a flexible nickel substrate using the DC/RF magnetron sputtering technique. The performance of the device has been assessed by imparting forces in the range of 0.12–0.61 N using various weights, finger tapping, bending, and magnetic fields. The device generates the maximum open circuit voltage (Voc) of 9.3 V and 6 V with 0.61 N of force and finger tapping, respectively. The corresponding short circuit current (Isc) has been obtained as 1.33 µA (0.61 N) and 0.9 µA (finger tapping). The device shows a maximum Voc of 10.6 V and Isc of 1.51 µA at the bending angle of 120°. Furthermore, the Voc and Isc have increased from 0 mV and 0 nA to 240 mV and 35 nA under the presence of 0 Oe to 500 Oe of DC magnetic field, respectively. The fabricated device exhibited a power density of 2.7 µW/cm2 with a high mechanical stability of 2500 cycles. Additionally, LEDs of green, red, yellow, and white color have been illuminated. The receptiveness of the fabricated PENG towards mechanical and magnetic stimuli highlights its potential in areas such as tactile sensing, wearable electronics, human-machine interfaces, and biomedical devices.

Achieving coaxial photoacoustic/ultrasound dual-modality imaging by high-performance Sm: 0.72PMN-0.28PT transparent piezoelectric ceramic

As a promising new medical imaging method, photoacoustic imaging (PAI) has the advantages of optical resolution and acoustic depth of penetration. The transparent ultrasound transducer (TUT), as a novel device applied to PAI, can combine the laser and acoustic beam coaxially to improve the imaging quality. Transparent piezoelectric materials are the key to developing piezoelectric TUTs. However, due to the birefringence and light scattering caused by ferroelectric domains, it is very hard to prepare transparent piezoelectric materials with both high optical transmittance and excellent piezoelectricity. In this study, 2.5mol% Sm-doped 0.72Pb(Mg1/3Nb2/3)O3-0.28PbTiO3 (PMN-PT) ceramic with a piezoelectric coefficient d33 of 1460 pC N-1 and an optical transmission of 69% at Near-Infrared (NIR) is successfully prepared, and its optical, microstructure, ferroelectric and dielectric properties are fully studied. Subsequently, a 3 mm-diameter photoacoustic coaxial probe is fabricated, involving a transparent ultrasound transducer based on the prepared ceramic. The TUT has a center frequency (fc) of 18.5MHz, a −6dB bandwidth of 20%, and a high effective electromechanical factor (keff) of 0.62. In addition, the imaging capability of the miniature probe is firstly confirmed through PA/US dual-modality imaging of in-vivo animals and phantoms, which indicates that the proposed transparent piezoelectric ceramic has great potential for photoacoustic/ultrasound imaging.

Flexible PMN-PT/rGO/PVDF-TrFE based composites for triboelectric and piezoelectric energy harvesting

Flexible piezoelectric nanogenerator (PENG) and triboelectric nanogenerators (TENG) have gained prodigious attention due to the increasing demand of nano and micro energy for driving of miniaturized electronic devices, sensors, and various internet of things. The key challenges that are currently in focus are material selection and simple fabrication techniques for improved electrical performance along with good mechanical properties and flexibility. Herein, a ferroelectric polymer, poly(vinylidenefluoride-co-trifluoroethyne) (PVDF-TrFE), is chosen as a flexible material due to its promising prospect for energy harvesting. To improve the performance, a ceramic material, 0.65Pb(Mg1/3Nb2/3)O3–0.35PbTiO3 (PMN-PT), with very high piezoelectric properties has been selected as the reinforcement. Further, reduced graphene oxide has been added as a conducting filler to promote charge conduction. A remarkable enhancement in output voltage of nearly 3 fold is achieved in PVDF-TrFE/PMN-PT (PP) polymer composite as compared to the base polymer PVDF-TrFE (P) TENG device. Furthermore, the PVDF-TrFE/rGO/PMN-PT (PPR) as a PENG illustrates a great improvement in output current of the order of 2 as compared to the pristine polymer. The maximum output voltage as shown by the TENG is 200 V and the maximum current that is shown by the PENG is 30 µA. Therefore, the fabricated PMN-PT based PVDF-TrFE nanogenerators have an immense prospect for applications in self-powered systems.

Electric field control of the energy gap in ZnO and BaSnO3 films grown on PMN-PT

ZnO and BaSnO3 (BSO) thin films grown on Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) substrates have been studied using electrical resistance and photoconductivity (PC) spectra measurements under different applied electric fields on the substrate. The behavior of the resistance and the energy gap (EG) extracted from the PC spectra are modified by the polarization state of the substrate in the case of the ZnO film, while for BSO, these physical parameters depend on the strain imposed by the substrate when a voltage is applied on the PMN-PT. In the latter case, an in-plane tensile (compressive) strain leads to a reduction (increase) in the resistance and the energy gap when an external electric field is applied on the substrate. The behavior of ZnO and BSO can be explained by the different crystalline structure in both films and by the fact that ZnO is also a piezoelectric material. In ZnO, a change in the polarization state of the substrate is associated with an imposed strain and an induced polarization on the film that leads to a modification of the band bending and hence of the energy gap. In the case of BSO, a shift of the impurity and conduction band generates a modification of the energy gap for the different types of strain.

Controllable and reversible electric field tuning of photoluminescence response in lanthanide ions doped ferroelectric films

The rare-earth doped ferroelectric photoluminescence (PL) phosphors are attracting considerable interest because of their flexible structure, wide band gap and high-quality fluorescence signal emission. Although the change of PL performance in different samples have been solved to a certain extent, how to achieve the tuning of PL intensity in one sample sensitively and reversibly is still an issue. In this work, we present an "electric-elastic-optical" coupled structure of 0.94Bi0.5Na0.5TiO3–0.06BaTiO3:1 mol%Eu3+ (BNTBT:Eu)/ 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 (PMN-PT) heterostructures, which transfers strain from the PMN-PT to the BNTBT:Eu film via the converse piezoelectric effect and dynamically modulates the PL response of the epitaxial thin film. Our findings demonstrate that the PL response of the thin film can be effectively and linearly tuned under the influence of an external electric field. The relative change in the PL intensity (ΔI/I) of the BNTBT:Eu film was found to be linearly correlated with the lateral strain of the substrate. We also propose a novel design strategy for detecting strain, with significant implications for using BNTBT:Eu/PMN-PT heterostructures as sensors for integrating piezophotonic devices. This work provides valuable insights into the feasibility of electric field tuning of PL performance, which could inspire future research endeavors in the fields of nanophotonics, optical storage technology and photovoltaics.

Self-Powered Pressure-Temperature Bimodal Sensing Based on the Piezo-Pyroelectric Effect for Robotic Perception.

Multifunctional sensors have played a crucial role in constructing high-integration electronic networks. Most of the current multifunctional sensors rely on multiple materials to simultaneously detect different physical stimuli. Here, we demonstrate the large piezo-pyroelectric effect in ferroelectric Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) single crystals for simultaneous pressure and temperature sensing. The outstanding piezoelectric and pyroelectric properties of PMN-PT result in rapid response speed and high sensitivity, with values of 46 ms and 28.4 nA kPa-1 for pressure sensing, and 1.98 s and 94.66 nC °C-1 for temperature detection, respectively. By leveraging the distinct differences in the response speed of piezoelectric and pyroelectric responses, the piezo-pyroelectric effect of PMN-PT can effectively detect pressure and temperature from mixed-force thermal stimuli, which enables a robotic hand for stimuli classification. With appealing multifunctionality, fast speed, high sensitivity, and compact structure, the proposed self-powered bimodal sensor therefore holds significant potential for high-performance artificial perception.

Thermal cycle stability and microstructure of Pb(Mg1/3Nb2/3)O3-PbTiO3 single crystals

The Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) ferroelectric single crystals have been commercially available as important components in medical ultrasound transducers due to their excellent piezoelectric and electromechanical coupling performance. The variation in piezoelectric and dielectric properties of PMN-PT single crystals with ambient temperature is an important application indicator. In this work, the PMN-PT single crystals after direct current poling (DCP) and alternating current poling (ACP) were subjected to the cyclic thermal treatment process. The thermal cycling stability and microstructural changes in PMN-PT single crystals were investigated. The ACP single crystals exhibit a higher dielectric constant ε33T/ε0 (6500–7600) and piezoelectric coefficient d33 (2100–2500 pC N−1) compared to the DCP single crystals (ε33T/ε0 of 4100–5000, d33 of 1200–1300 pC N−1). Under thermal cycling at 60 °C, the DCP and ACP single crystals exhibit good thermal cycling stability after 150 cycles. Microstructural observations show that the domain structure of the DCP single crystals exhibits “staggered domain walls, inhomogeneous domain size, variety of domain structure,” while the relatively homogeneous stripe-like domains were observed in the ACP single crystals. After thermal cycling, new fine striped domains appear in both the DCP and ACP single crystals due to the instability of rotated polarization, but the piezoelectric and dielectric properties are not greatly affected. This work provides an intensive understanding of the effects of thermal cycling on the domain structure, which is useful for applications.

Static and dynamic strain-driven photoluminescence tuning in rare-earth doped perovskite oxide thin films

Recently, there have been significant interest in the wide potential of photoluminescence (PL) response of rare-earth doped perovskite oxide thin films in the field of optoelectronics. This work reports an effective method to modulate the PL properties of 0.8 mol%Sm3+-doped BaTiO3 (BTO:Sm) thin films through static and dynamic strain. BTO:Sm films were epitaxially grown on LaAlO3 (LAO), 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT), MgO, and Mica single-crystal substrates by pulsed laser deposition technique. Compared with the BTO:Sm/PMN-PT heterostructure which experiences minimal lattice mismatch effect, the PL intensity of BTO:Sm/LAO and BTO:Sm/MgO is enhanced by 818.1% and 1014.7%, respectively, due to static tensile/compressive strain (-0.429% and 0.461%) during the epitaxial growth process. In the flexible BTO:Sm/Mica heterostructure, dynamic strain is introduced through mechanical bending. Compared with the unbent state, the u-type and n-type bending modes increase the relative changes in PL intensity (ΔI/I) by 599.0% and 768.5%, respectively. Particularly, BTO:Sm/Mica also exhibits a remarkable optical transmittance exceeding 75% (500–2500 nm). The enhancement of PL intensity is closely related to the adjustment of lattice strain, which changes the crystal field strength of the BTO:Sm and the radiative transition probability. This work provides valuable insights for designing future optoelectronic devices and environmental monitoring equipment. It has the potential to advance photonics and sensor technologies, paving the way for innovation and exploration in these fields.

Reactive templated grain growth of Pb(Mg1/3Nb2/3)O3–PbTiO3 ceramics using MgO-doped (Na,Bi)0.4Pb0.6TiO3 template

Textured Pb(Mg1/3Nb2/3)O3–PbTiO3 (PMN-PT) piezoelectric ceramics with an anisotropic crystal structure were fabricated by reactive templated grain growth (RTGG) using MgO-doped (Na1/2Bi1/2)TiO3–PbTiO3 (MNBT-PT) seed. The crystal growth of MNBT-PT seed was stimulated by the addition of MgO, resulting in a rectangular single-crystal template with a width of 5∼20 μm and a thickness of 3∼5 μm. These rectangular MNBT-PT seeds effectively reduced the sintering temperature of the PMN-PT matrix, and the reaction occurred through in-situ topochemical conversion, leading to a single perovskite phase with an oriented texture. Because the MNBT-PT seeds with tetragonal structure altered the crystal structure matrix phase to be tetragonal-rich, the matrix phase of PMN-PT had to be optimized by adjusting the PMN/PT ratio to achieve optimal piezoelectric properties. The textured PMN-PT piezoelectric ceramic created using the reactive MNBT-PT seeds demonstrated superior piezoelectric/ferroelectric properties (d33 of 951 pC/N, kp of 0.64 and Pr of 24.9 μC/cm2) compared to ceramics with BaTiO3 (BT) seed made under the same conditions. This improvement is likely due to the formation of a textured single phase crystal structure.

Stabilizing Perovskite Pb(Mg0.33Nb0.67)O3-PbTiO3 Thin Films by Fast Deposition and Tensile Mismatched Growth Template.

Because of its low hysteresis, high dielectric constant, and strong piezoelectric response, Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) thin films have attracted considerable attention for the application in PiezoMEMS, field-effect transistors, and energy harvesting and storage devices. However, it remains a great challenge to fabricate phase-pure, pyrochlore-free PMN-PT thin films. In this study, we demonstrate that a high deposition rate, combined with a tensile mismatched template layer can stabilize the perovskite phase of PMN-PT films and prevent the nucleation of passive pyrochlore phases. We observed that an accelerated deposition rate promoted mixing of the B-site cation and facilitated relaxation of the compressively strained PMN-PT on the SrTiO3 (STO) substrate in the initial growth layer, which apparently suppressed the initial formation of pyrochlore phases. By employing La-doped-BaSnO3 (LBSO) as the tensile mismatched buffer layer, 750 nm thick phase-pure perovskite PMN-PT films were synthesized. The resulting PMN-PT films exhibited excellent crystalline quality close to that of the STO substrate.

3D printed piezoelectric focused element for ultrasonic transducer

Bulk 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-29PT) piezoelectric ceramics are prepared using 3D printing stereolithography (SLA) technique. The crystal strcture and microstructure of the 3D printed green bodis and sintered ceramics were analyzed. The 3D printed samples exhibit prospective dielectric, piezoelectric and ferroelectric performance. The dielectric constant and piezoelectric coefficient d33 of the sintered PMN-29PT ceramics reach 2698 and 487 pC/N, respectively. Furthermore, focused piezoelectric element with bowl-like structure was designed and prepared using SLA. The ultrasonic transducer based on the 3D printed focused element presents promising performance with center frequency of 2.85 MHz and 45% −6 dB bandwidth. These results demonstrate the potential of fabricating piezoelectric ceramics with complex structure by 3D printing for the application in piezoelectric devices.

Ultrahigh electrostrictive strain and its response to mechanical loading in Nd-doped PMN-PT ceramics

Electrostrictive materials play an important role in the development of high precision actuators, due to the advantages of high resolution, low power dissipation and fast response time. However, the practical application of electrostrictive materials has been hindered by their limited displacement output. To address this, we conducted a study where we doped Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) ceramics with Nd2O3, aiming to significantly improve the electrostrictive effect by enhancing local structural heterogeneities that disrupt the formation of long-range ordered ferroelectric domains. We obtained an optimized electrostrictive strain of 0.231 % with negligible hysteresis at an electric field of 50 kV/cm in 4 %Nd-doped PMN-PT ceramic, surpassing the performance of state-of-the-art lead-based electrostrictive ceramics. Of particular significance is that a high electrostrictive coefficients M33 = 12.2 × 10−16 m2/V2, together with a high mechanical work density of 0.035 J/cm3 and a low power dissipation of 14 %, was achieved under a mechanical prestress of 50 MPa and an electric field of 10 kV/cm. Additionally, this material exhibits excellent fatigue resistance, with less than 3 % variation over 106 operation cycles. All these findings position 4 %Nd-doped PMN-PT ceramics as a promising candidate for high-performance electromechanical actuator applications.

Effects of electric field and light on resistivity switching of Eu0.7Sr0.3MnO3 thin films.

Based on the excellent piezoelectric properties of 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) single crystals, a hole-doped manganite film/PMN-PT heterostructure has been constructed to achieve electric-field and light co-control of physical properties. Here, we report the resistivity switching behavior of Eu0.7Sr0.3MnO3/PMN-PT(111) multiferroic heterostructures under different in-plane reading currents, temperatures, light stimuli and electric fields, and discuss the underlying coupling mechanisms of resistivity change. The transition from the electric-field induced lattice strain effect to polarization current effect can be controlled effectively by decreasing the in-plane reading current at room temperature. With the decrease of temperature, the interfacial charge effect dominates over the lattice strain effect due to the reduced charge carrier density. In addition, light stimulus can lead to the delocalization of eg carriers, and thus enhance the lattice strain effect and suppress the interfacial charge effect. This work helps to understand essential physics of magnetoelectric coupling and also provides a potential method to realize energy-efficient multi-field control of manganite thin films.

Chemical composition-induced evolution of the structure, domain and electrical properties of Sm-doped (1 - x)Pb(Ni1/3Nb2/3)O3-xPbTiO3.

As the two typical basic binary solid solutions of the relaxor-PbTiO3 family, Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) has been widely investigated, whereas Pb(Ni1/3Nb2/3)O3-PbTiO3 (PNN-PT) has not. Here, 1.5 mol% Sm-doped (1 - x)Pb(Ni1/3Nb2/3)O3-xPbTiO3, (1 - x)PNN-xPT:0.015Sm with x = 0.33-0.39, ceramics have been prepared and the chemical composition-induced evolution of crystal structure, domain, and electrical properties investigated systematically. With increasing PT content, evolution of the rhombohedral-tetragonal structure was observed. A rhombohedral-tetragonal morphotropic phase boundary occurred around x = 0.36-0.37, which showed a peak piezoelectric property with piezoelectric constant d33 = 531 pC N-1 and planar electromechanical coupling factor kp = 0.37 at room temperature. At the same time, the x = 0.36 composition showed improved ferroelectric behavior with remanent polarization Pr = 13.4 μC cm-2 and coercive field Ec = 3.2 kV cm-1. Interestingly, different from its PMN-PT counterpart, there is no temperature-driven phase transition between room temperature and the Curie temperature for (1 - x)PNN-xPT:0.015Sm. These parameters indicated that the PNN-PT system is worthy of more attention and is a promising platform for further development of high-performance piezo/ferroelectric materials.

Effect of strain rate on the hardness of relaxor ferroelectric PMN-0.32PT single crystals

The relaxor ferroelectric Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) has been considered to be a potential choice for high performance actuators and sensors owing to their ultrahigh electromechanical properties. Recent experiments have shown that the hardness and indentation fracture toughness of PMN-PT varies with load and loading direction. However, it is not clear from these studies that how the loading rates would affect the indentation response of these materials. Therefore, nanoindentation experiments at different strain rates are performed on [001] and [011] oriented poled PMN-0.32PT single crystals. Results show that the hardness, H decreases with increase in strain rate. This behavior is in contrast to the trend reported for PMN-PT single crystal in the recent past. The indentation size effect (ISE) is noticed in both the orientation for all the strain rates. In order to analyze the observed ISE, various mechanistic models are used such as Meyer's law, Hays-Kendall (H-K) model, proportional specimen resistance (PSR) model, and modified PSR (MPSR) model. The analysis of nanoindentation data using MPSR model satisfactorily describes the ISE in terms of resistance offered by the specimen to indenter penetration, the interface friction, and surface residual stress.

Varied domain structures in 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 single crystals

Single crystals of 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-30PT) with a composition close to the morphotropic phase boundary have demonstrated remarkable electromechanical properties, stimulating intensive research interest in the field of piezoelectrics. Domain structures have long been associated with their overall piezoelectric properties, thereby garnering particular research interest for the enhancement of piezoelectric properties. Here, we report on three distinct domain structures in this material. Through a combination of X-ray diffraction reciprocal space mapping and piezoresponse force microscopy measurements, an M A crystal structure has been confirmed. The three-dimensional polar vectors of the three domain structures have been reconstructed with two 4M A and one 2M A domain structures. Correlations between different domain structures and their local electrical switching properties have been revealed. Our study of the PMN-30PT single crystal examines diverse domain structures at the mesoscale in detail, which provides valuable insight into the relationship between structures and properties of the material.

Polar topological superdomain arrays in PMN-PT crystals engineered via a voltage-free method

Domain engineering is an active field of research that aims to enhance the functional properties of ferroelectric materials for various applications. This work presents a voltage-free method for fabricating topological superdomain arrays in 0.72Pb(Mg1/3Nb2/3)O3-0.28PbTiO3 (PMN-28PT) crystals. During the cooling process from high-temperature paraelectric phase to room temperature ferroelectric phase, the out-of-plane polarization of PMN-28PT crystals in contact with aluminum can be fully regulated downward, attributed to the difference in the work function of aluminum and PMN-28PT. In conjunction further with photolithography and ultraviolet light illumination, it is easy to obtain periodic strip domain structures with alternating up and down polarization. Moreover, this method can also control in-plane polarization, resulting in a large-scale central divergent/convergent topological superdomain array. These findings provide insights into ferroelectric domain engineering and have implications for the development of electromechanical, piezoelectronic, and photonic devices.

Thermal expansion properties of three-dimensional relaxor ferroelectric single crystals

Large-size Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) and Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 (PIN-PMN-PT) single crystals have been successfully produced. Nevertheless, the susceptibility of these crystals to cracking substantially hampers their application. This study investigates the thermal expansion characteristics of PMN-PT and PIN-PMN-PT crystals oriented along the 〈100〉, 〈110〉, and 〈111〉 directions, revealing no significant anisotropy. The average thermal expansion coefficients for the PMN-PT and PIN-PMN-PT crystals range from 7.77 to 8.21 × 10−6 K−1 and from 6.59 to 6.79 × 10−6 K−1, respectively, within the temperature range of 20 to 600 °C. Interestingly, the PMN-PT and PIN-PMN-PT crystals demonstrate unusual thermal expansion behavior around the phase transition temperature. The magnitudes of their thermal expansion coefficients are comparable to those of certain commercial crystals but are lower than that of platinum. The main causes inferred for crystal cracking include the pressure exerted by the platinum crucible and the abnormal thermal expansion behavior around the phase transition temperature.

In situ TEM dark-field observation on ferroelectric/ferroelastic domain evolution in ferroelectrics sub-micrometer pillar under stress

The evolution of ferroelectric/ferroelastic domains in ferroelectric materials (FMs) under stress fields is a significant yet complex process. This process involves the interaction of hierarchical domain structures across scales, as well as the coupling of elastic and electrical potentials. To understand the critical local microstructure evolution, here we used in situ transmission electron microscopy (TEM) to directly observe the hierarchical domain evolution induced by stress in BaTiO3 and Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) sub-micrometer pillars. The results indicate that domain evolution is sensitive to the loading methods, including loading/unloading speed, stress maintenance duration, and stress amplitude. Assisted by phase-field simulations, we have proved that mobile point defect pinning effect also influence the domain evolution greatly. Based on above understanding, we successfully achieved a large recoverable deformation in PMN-PT pillar with 10% strain. Our findings provide a novel avenue to develop super-flexibility in FMs.

Electric field control of the ferromagnetic resonance linewidth in synthetic antiferromagnetic heterostructure

In this study, we present a novel approach to control the microwave properties of a Co/Ru/FeNi film, characterized by strong antiferromagnetic coupling and in plane uniaxial anisotropy. The film is fabricated on a Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) ferroelectric substrate using the magnetron oblique sputtering. Our experimental results demonstrate a remarkable non-volatile mediation of the ferromagnetic resonance (FMR) field and linewidth by applying the perpendicular-bias electric field. The observed asymmetric butterfly curve indicates the existence of electric mediation dominated by strain effect. Moreover, we investigate the angular dependence of FMR under different electric field, which reveals changes in magnetic anisotropy including FMR field. Notably, the FMR linewidth exhibits a distinctive four-fold anisotropy. Through microstructure analysis of the film surface, we identify that the origin of this FMR linewidth anisotropy is attributed to the two-magnon scattering induced by the oblique sputtering.